SG11201908617QA - Surface treatment methods and compositions therefor - Google Patents

Surface treatment methods and compositions therefor

Info

Publication number
SG11201908617QA
SG11201908617QA SG11201908617QA SG11201908617QA SG 11201908617Q A SG11201908617Q A SG 11201908617QA SG 11201908617Q A SG11201908617Q A SG 11201908617QA SG 11201908617Q A SG11201908617Q A SG 11201908617QA
Authority
SG
Singapore
Prior art keywords
international
go3f
pct
surface treatment
compositions therefor
Prior art date
Application number
Other languages
English (en)
Inventor
William A Wojtczak
Keeyoung Park
Atsushi Mizutani
Original Assignee
Fujifilm Electronic Materials Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials Usa Inc filed Critical Fujifilm Electronic Materials Usa Inc
Publication of SG11201908617QA publication Critical patent/SG11201908617QA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/008Temporary coatings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20Diluents or solvents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/18Materials not provided for elsewhere for application to surfaces to minimize adherence of ice, mist or water thereto; Thawing or antifreeze materials for application to surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02334Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/60Additives non-macromolecular
    • C09D7/63Additives non-macromolecular organic
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Detergent Compositions (AREA)
  • Lubricants (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
SG11201908617Q 2017-03-24 2018-03-22 Surface treatment methods and compositions therefor SG11201908617QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762476182P 2017-03-24 2017-03-24
US201862617688P 2018-01-16 2018-01-16
PCT/US2018/023697 WO2018175682A1 (en) 2017-03-24 2018-03-22 Surface treatment methods and compositions therefor

Publications (1)

Publication Number Publication Date
SG11201908617QA true SG11201908617QA (en) 2019-10-30

Family

ID=63581154

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908617Q SG11201908617QA (en) 2017-03-24 2018-03-22 Surface treatment methods and compositions therefor

Country Status (9)

Country Link
US (1) US10593538B2 (enExample)
EP (1) EP3602606B1 (enExample)
JP (3) JP7452782B2 (enExample)
KR (1) KR102519448B1 (enExample)
CN (2) CN118344845A (enExample)
IL (1) IL269490B (enExample)
SG (1) SG11201908617QA (enExample)
TW (1) TWI835725B (enExample)
WO (1) WO2018175682A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10941301B2 (en) * 2017-12-28 2021-03-09 Tokyo Ohka Kogyo Co., Ltd. Surface treatment method, surface treatment agent, and method for forming film region-selectively on substrate
IL275626B2 (en) 2018-01-05 2024-07-01 Fujifilm Electronic Mat Usa Inc Surface treatment compositions and methods
KR102084164B1 (ko) * 2018-03-06 2020-05-27 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
KR102391370B1 (ko) 2018-04-05 2022-04-27 샌트랄 글래스 컴퍼니 리미티드 웨이퍼의 표면 처리 방법 및 당해 방법에 이용하는 조성물
US20200035494A1 (en) * 2018-07-30 2020-01-30 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
JP7328564B2 (ja) * 2018-11-22 2023-08-17 セントラル硝子株式会社 ベベル部処理剤組成物およびウェハの製造方法
CN114258420A (zh) * 2019-08-21 2022-03-29 富士胶片电子材料美国有限公司 表面处理组合物及方法
US11781092B2 (en) * 2019-08-27 2023-10-10 Resonac Corporation Composition, and method for cleaning adhesive polymer
JP7446097B2 (ja) * 2019-12-06 2024-03-08 東京応化工業株式会社 表面処理剤及び表面処理方法
EP4155375A4 (en) * 2020-05-21 2024-07-24 Central Glass Company, Limited SURFACE TREATMENT METHOD FOR SEMICONDUCTOR SUBSTRATES AND SURFACE TREATMENT AGENT COMPOSITION
JP7727202B2 (ja) * 2020-05-21 2025-08-21 セントラル硝子株式会社 半導体基板の表面処理方法、及び表面処理剤組成物
US20230317464A1 (en) * 2022-03-31 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
US20240101929A1 (en) * 2022-09-14 2024-03-28 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
WO2024248021A1 (ja) * 2023-05-31 2024-12-05 セントラル硝子株式会社 膜形成用組成物、基板の製造方法、および膜形成用組成物の製造方法
WO2025106343A1 (en) * 2023-11-13 2025-05-22 Fujifilm Electronic Materials U.S.A., Inc. Etching methods

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032338B2 (ja) 1977-03-16 1985-07-27 太陽誘電株式会社 導電性塗料焼付電極を有する磁器コンデンサ
JPS54107442A (en) 1978-02-09 1979-08-23 Nippon Boshoku Kogyo Kk External source type* electrical corrosion preventive anode system for bottom portion of outdoor steel container
KR100764888B1 (ko) * 2000-07-10 2007-10-09 이케이씨 테크놀로지, 인코포레이티드 반도체 장치용의 유기 및 플라즈마 식각된 잔사의 세척을위한 조성물
TW200409669A (en) 2002-04-10 2004-06-16 Dow Corning Ireland Ltd Protective coating composition
US7345000B2 (en) * 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US7041226B2 (en) * 2003-11-04 2006-05-09 Lexmark International, Inc. Methods for improving flow through fluidic channels
US20070218811A1 (en) 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
SG158920A1 (en) 2005-01-27 2010-02-26 Advanced Tech Materials Compositions for processing of semiconductor substrates
US7500397B2 (en) * 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
KR100840498B1 (ko) * 2007-05-29 2008-06-23 주식회사 동부하이텍 반도체소자의 패턴 붕괴 방지 방법
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
KR20110086028A (ko) 2008-10-21 2011-07-27 도오꾜오까고오교 가부시끼가이샤 표면 처리액 및 표면 처리 방법, 그리고 소수화 처리 방법 및 소수화된 기판
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
SG173043A1 (en) 2009-01-21 2011-08-29 Central Glass Co Ltd Silicon wafer cleaning agent
JP5324361B2 (ja) 2009-08-28 2013-10-23 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5663160B2 (ja) 2009-09-28 2015-02-04 東京応化工業株式会社 表面処理剤及び表面処理方法
US8222196B2 (en) * 2009-11-12 2012-07-17 Ecolab Usa Inc. Composition and methods for removal of polymerized non-trans fats
JP5680932B2 (ja) 2009-11-13 2015-03-04 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5708191B2 (ja) 2010-05-19 2015-04-30 セントラル硝子株式会社 保護膜形成用薬液
CN102934207B (zh) 2010-06-07 2016-04-06 中央硝子株式会社 保护膜形成用化学溶液
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
JP5716527B2 (ja) 2010-06-28 2015-05-13 セントラル硝子株式会社 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP2012033880A (ja) 2010-06-30 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液
JP2012015335A (ja) 2010-06-30 2012-01-19 Central Glass Co Ltd 保護膜形成用薬液、および、ウェハ表面の洗浄方法
TWI559387B (zh) 2010-08-27 2016-11-21 恩特葛瑞斯股份有限公司 預防乾燥期間高縱橫比結構崩塌之方法
JP2013118347A (ja) * 2010-12-28 2013-06-13 Central Glass Co Ltd ウェハの洗浄方法
US8828144B2 (en) * 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
US20120164818A1 (en) 2010-12-28 2012-06-28 Central Glass Company, Limited Process for Cleaning Wafers
JP6213616B2 (ja) * 2011-10-28 2017-10-18 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5953721B2 (ja) 2011-10-28 2016-07-20 セントラル硝子株式会社 保護膜形成用薬液の調製方法
WO2013069499A1 (ja) * 2011-11-11 2013-05-16 セントラル硝子株式会社 ウェハの表面処理方法及び表面処理液、並びに、窒化ケイ素含有ウェハ用の表面処理剤、表面処理液、及び表面処理方法
JP2013104954A (ja) 2011-11-11 2013-05-30 Central Glass Co Ltd ウェハの表面処理方法及び表面処理液
JP5288147B2 (ja) 2011-11-29 2013-09-11 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5974514B2 (ja) * 2012-02-01 2016-08-23 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
JP5969253B2 (ja) 2012-02-10 2016-08-17 東京応化工業株式会社 表面処理剤及び表面処理方法
JP2013168583A (ja) 2012-02-16 2013-08-29 Toagosei Co Ltd 表面処理剤および表面処理方法
CN103007911B (zh) * 2012-12-01 2014-04-30 福州大学 一种表面处理剂用复合催化剂的制备方法
CN104871289B (zh) * 2012-12-14 2017-10-10 巴斯夫欧洲公司 包含表面活性剂和疏水化剂的组合物在处理线间距尺寸为50nm或更低的图案化材料时避免图案崩塌的用途
JP6221279B2 (ja) * 2013-03-18 2017-11-01 富士通株式会社 レジスト組成物の製造方法及びパターン形成方法
JP6191372B2 (ja) 2013-10-04 2017-09-06 セントラル硝子株式会社 ウェハの洗浄方法
US9562211B2 (en) * 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
CN103773236B (zh) * 2014-01-17 2016-02-03 浙江大学 一种在基材表面制备防水防油型陶瓷涂料的方法
TWI596663B (zh) 2014-05-12 2017-08-21 東京威力科創股份有限公司 柔性奈米結構之乾燥的改善方法及系統
US9703202B2 (en) 2015-03-31 2017-07-11 Tokyo Ohka Kogyo Co., Ltd. Surface treatment process and surface treatment liquid
JP6564312B2 (ja) 2015-03-31 2019-08-21 東京応化工業株式会社 表面処理方法及び表面処理液
US9976037B2 (en) * 2015-04-01 2018-05-22 Versum Materials Us, Llc Composition for treating surface of substrate, method and device
JP6592303B2 (ja) * 2015-08-14 2019-10-16 株式会社Screenホールディングス 基板洗浄方法および基板洗浄装置
JP6681796B2 (ja) 2016-06-21 2020-04-15 東京応化工業株式会社 シリル化剤溶液、表面処理方法、及び半導体デバイスの製造方法
JP6310583B2 (ja) * 2017-02-10 2018-04-11 株式会社Screenホールディングス 基板処理方法および基板処理装置
CN108250916A (zh) * 2017-12-29 2018-07-06 安徽鑫发铝业有限公司 一种汽车用铝型材表面处理工艺
IL275626B2 (en) 2018-01-05 2024-07-01 Fujifilm Electronic Mat Usa Inc Surface treatment compositions and methods

Also Published As

Publication number Publication date
JP7452782B2 (ja) 2024-03-19
JP2024103792A (ja) 2024-08-01
US10593538B2 (en) 2020-03-17
EP3602606B1 (en) 2024-06-26
TW201842148A (zh) 2018-12-01
KR102519448B1 (ko) 2023-04-07
CN118344845A (zh) 2024-07-16
CN110462525B (zh) 2024-07-26
EP3602606A4 (en) 2020-02-05
JP7502388B2 (ja) 2024-06-18
IL269490A (en) 2019-11-28
US20180277357A1 (en) 2018-09-27
WO2018175682A1 (en) 2018-09-27
JP2023027033A (ja) 2023-03-01
CN110462525A (zh) 2019-11-15
JP2020512693A (ja) 2020-04-23
EP3602606A1 (en) 2020-02-05
KR20190124795A (ko) 2019-11-05
TWI835725B (zh) 2024-03-21
IL269490B (en) 2022-06-01

Similar Documents

Publication Publication Date Title
SG11201908617QA (en) Surface treatment methods and compositions therefor
SG11201908616PA (en) Cleaning compositions for removing residues on semiconductor substrates
SG11201407650VA (en) Composition and process for stripping photoresist from a surface including titanium nitride
SG11201807077RA (en) Solid forms of a thienopyrimidinedione acc inhibitor and methods for production thereof
SG11201807521WA (en) Advanced fluid processing methods and systems
SG11201901751QA (en) Methods for biobased derivatization of cellulosic surfaces
SG11201806624XA (en) Deposition of molybdenum thin films using a molybdenum carbonyl precursor
SG11201901450QA (en) Methods of forming semiconductor device structures including two-dimensional material structures
SG11201906882RA (en) Cleaning formulations
SG11201908075UA (en) A microneedle device
SG11201805176RA (en) A method and an apparatus for monitoring and controlling deposit formation
SG11201901272WA (en) Mesenchymal cell-derived exosomes to treat neurological disorders
SG11201809908TA (en) Stabilized glycopeptide antibiotic formulations
SG11201809830WA (en) Selective reduction of cysteine-engineered antibodies
SG11201805001UA (en) Method of treating influenza a
SG11201804587QA (en) Isoindole compounds
SG11201903193WA (en) Deodorant comprisng a zinc carboxylate salt and aluminium chlorohydrate
SG11201804919TA (en) Glass substrate for chemical strengthening and method for chemically strengthening with controlled curvature
SG11201900618WA (en) Permanently polarized hydroxyapatite, a process for its manufacture and uses thereof
SG11201809882XA (en) Pharmaceutical combinations for treating cancer
SG11201909263XA (en) Improvements in or relating to organic compounds
SG11201908327UA (en) Polishing compositions and methods of use thereof
SG11201805283UA (en) Wafer singulation process control
SG11201906082XA (en) Patinated or patina-ready metal transaction cards and manufacturing processes
SG11201808643SA (en) A solid form of (-)-ambrox formed by a bioverversion of homofarnesol in the presence of a biocatalyst