SG11201608819VA - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
SG11201608819VA
SG11201608819VA SG11201608819VA SG11201608819VA SG11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
bonding
wire
semiconductor
Prior art date
Application number
SG11201608819VA
Other languages
English (en)
Inventor
Tetsuya Oyamada
Tomohiro Uno
Hiroyuki Deai
Original Assignee
Nippon Steel & Sumikin Mat Co
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel & Sumikin Mat Co, Nippon Micrometal Corp filed Critical Nippon Steel & Sumikin Mat Co
Publication of SG11201608819VA publication Critical patent/SG11201608819VA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
SG11201608819VA 2014-04-21 2015-04-21 Bonding wire for semiconductor device SG11201608819VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014087587 2014-04-21
PCT/JP2015/062040 WO2015163297A1 (ja) 2014-04-21 2015-04-21 半導体装置用ボンディングワイヤ

Publications (1)

Publication Number Publication Date
SG11201608819VA true SG11201608819VA (en) 2016-12-29

Family

ID=54332462

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608819VA SG11201608819VA (en) 2014-04-21 2015-04-21 Bonding wire for semiconductor device

Country Status (10)

Country Link
US (1) US10950570B2 (ko)
EP (1) EP3136427B1 (ko)
JP (3) JP6167227B2 (ko)
KR (2) KR101902091B1 (ko)
CN (2) CN106233447A (ko)
MY (1) MY168617A (ko)
PH (1) PH12016502098B1 (ko)
SG (1) SG11201608819VA (ko)
TW (1) TWI605559B (ko)
WO (1) WO2015163297A1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101902091B1 (ko) 2014-04-21 2018-09-27 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
CN106489199B (zh) 2015-06-15 2019-09-03 日铁新材料股份有限公司 半导体装置用接合线
WO2017013796A1 (ja) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
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US10529683B2 (en) 2015-12-15 2020-01-07 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
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