SG11201606647PA - Circuit system - Google Patents
Circuit systemInfo
- Publication number
- SG11201606647PA SG11201606647PA SG11201606647PA SG11201606647PA SG11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA
- Authority
- SG
- Singapore
- Prior art keywords
- circuit system
- circuit
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014052263 | 2014-03-14 | ||
JP2014052864 | 2014-03-16 | ||
JP2014055459 | 2014-03-18 | ||
JP2014070518 | 2014-03-28 | ||
JP2014093321 | 2014-04-30 | ||
PCT/IB2015/051567 WO2015136412A1 (en) | 2014-03-14 | 2015-03-04 | Circuit system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606647PA true SG11201606647PA (en) | 2016-09-29 |
Family
ID=54069743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606647PA SG11201606647PA (en) | 2014-03-14 | 2015-03-04 | Circuit system |
Country Status (6)
Country | Link |
---|---|
US (1) | US9685500B2 (ko) |
JP (5) | JP6619559B2 (ko) |
KR (3) | KR102252213B1 (ko) |
SG (1) | SG11201606647PA (ko) |
TW (1) | TWI646534B (ko) |
WO (1) | WO2015136412A1 (ko) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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US9716100B2 (en) * | 2014-03-14 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and electronic device |
JP6901831B2 (ja) | 2015-05-26 | 2021-07-14 | 株式会社半導体エネルギー研究所 | メモリシステム、及び情報処理システム |
WO2017068478A1 (en) * | 2015-10-22 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device including the semiconductor device |
US10096631B2 (en) * | 2015-11-30 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and semiconductor device including the signal processing circuit |
JP6807725B2 (ja) * | 2015-12-22 | 2021-01-06 | 株式会社半導体エネルギー研究所 | 半導体装置、表示パネル、及び電子機器 |
US10177142B2 (en) * | 2015-12-25 | 2019-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Circuit, logic circuit, processor, electronic component, and electronic device |
JP6904907B2 (ja) * | 2015-12-28 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 酸化物及び半導体装置の作製方法 |
JP6858549B2 (ja) * | 2015-12-28 | 2021-04-14 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置 |
KR20180109902A (ko) | 2016-01-29 | 2018-10-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
US10014325B2 (en) * | 2016-03-10 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP2017224676A (ja) * | 2016-06-14 | 2017-12-21 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
JP6715696B2 (ja) * | 2016-06-22 | 2020-07-01 | 株式会社ワコム | 電子ペン |
KR20180055701A (ko) | 2016-11-17 | 2018-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR102658411B1 (ko) * | 2016-12-30 | 2024-04-16 | 엘지디스플레이 주식회사 | 산화물 박막트랜지스터 및 그 제조 방법과, 이를 이용한 표시패널 및 표시장치 |
KR102584150B1 (ko) * | 2017-12-26 | 2023-09-27 | 엘지디스플레이 주식회사 | 박막트랜지스터 및 그를 포함하는 유기발광표시장치 |
US10147614B1 (en) * | 2018-01-08 | 2018-12-04 | United Microelectronics Corp. | Oxide semiconductor transistor and method of manufacturing the same |
KR20200052782A (ko) * | 2018-11-07 | 2020-05-15 | 엘지디스플레이 주식회사 | 표시 장치 |
US10950545B2 (en) * | 2019-03-08 | 2021-03-16 | International Business Machines Corporation | Circuit wiring techniques for stacked transistor structures |
US11374494B2 (en) | 2019-03-21 | 2022-06-28 | Infineon Technologies LLC | General-purpose analog switch with a controlled differential equalization voltage-slope limit |
WO2021053473A1 (ja) * | 2019-09-20 | 2021-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
US11379231B2 (en) * | 2019-10-25 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing system and operation method of data processing system |
WO2021094878A1 (ja) * | 2019-11-15 | 2021-05-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11296224B1 (en) * | 2021-06-16 | 2022-04-05 | Purdue Research Foundation | Non-volatile polarization induced strain coupled 2D FET memory |
WO2023058763A1 (ja) | 2021-10-08 | 2023-04-13 | 株式会社小糸製作所 | クリーナノズル |
WO2023148571A1 (ja) * | 2022-02-04 | 2023-08-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2023161757A1 (ja) * | 2022-02-25 | 2023-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2023170511A1 (ja) * | 2022-03-11 | 2023-09-14 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
WO2023187544A1 (ja) * | 2022-03-31 | 2023-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
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-
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- 2015-03-04 SG SG11201606647PA patent/SG11201606647PA/en unknown
- 2015-03-04 KR KR1020167026477A patent/KR102252213B1/ko active IP Right Grant
- 2015-03-04 KR KR1020227005949A patent/KR102414469B1/ko active IP Right Grant
- 2015-03-04 KR KR1020217014006A patent/KR102367921B1/ko active IP Right Grant
- 2015-03-04 WO PCT/IB2015/051567 patent/WO2015136412A1/en active Application Filing
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- 2015-03-12 JP JP2015048995A patent/JP6619559B2/ja active Active
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TW201601150A (zh) | 2016-01-01 |
JP2020043349A (ja) | 2020-03-19 |
KR20220028168A (ko) | 2022-03-08 |
WO2015136412A1 (en) | 2015-09-17 |
JP2022141759A (ja) | 2022-09-29 |
KR102414469B1 (ko) | 2022-06-30 |
TWI646534B (zh) | 2019-01-01 |
KR20210056454A (ko) | 2021-05-18 |
JP7026666B2 (ja) | 2022-02-28 |
JP2024040158A (ja) | 2024-03-25 |
KR20160132873A (ko) | 2016-11-21 |
KR102252213B1 (ko) | 2021-05-14 |
US9685500B2 (en) | 2017-06-20 |
JP2015222807A (ja) | 2015-12-10 |
JP6619559B2 (ja) | 2019-12-11 |
US20150263007A1 (en) | 2015-09-17 |
JP2021166303A (ja) | 2021-10-14 |
KR102367921B1 (ko) | 2022-02-25 |
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