SG10201911774WA - Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG10201911774WA SG10201911774WA SG10201911774WA SG10201911774WA SG10201911774WA SG 10201911774W A SG10201911774W A SG 10201911774WA SG 10201911774W A SG10201911774W A SG 10201911774WA SG 10201911774W A SG10201911774W A SG 10201911774WA SG 10201911774W A SG10201911774W A SG 10201911774WA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- semiconductor device
- phase shift
- mask
- mask blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015218455 | 2015-11-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201911774WA true SG10201911774WA (en) | 2020-02-27 |
Family
ID=58662562
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201803116UA SG11201803116UA (en) | 2015-11-06 | 2016-10-26 | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| SG10201911774WA SG10201911774WA (en) | 2015-11-06 | 2016-10-26 | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| SG10201908855R SG10201908855RA (en) | 2015-11-06 | 2016-10-26 | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201803116UA SG11201803116UA (en) | 2015-11-06 | 2016-10-26 | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201908855R SG10201908855RA (en) | 2015-11-06 | 2016-10-26 | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10915016B2 (ko) |
| JP (3) | JP6158460B1 (ko) |
| KR (3) | KR102368405B1 (ko) |
| SG (3) | SG11201803116UA (ko) |
| TW (3) | TWI666509B (ko) |
| WO (1) | WO2017077915A1 (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201803116UA (en) * | 2015-11-06 | 2018-05-30 | Hoya Corp | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| JP6396611B2 (ja) * | 2016-02-15 | 2018-09-26 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び半導体デバイスの製造方法 |
| SG10201911903XA (en) | 2017-02-27 | 2020-02-27 | Hoya Corp | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP6808566B2 (ja) | 2017-04-08 | 2021-01-06 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| US20200285144A1 (en) * | 2017-09-21 | 2020-09-10 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing semiconductor device |
| US11086211B2 (en) * | 2017-11-08 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masks and methods of forming the same |
| JP6547019B1 (ja) * | 2018-02-22 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 |
| JP6938428B2 (ja) * | 2018-05-30 | 2021-09-22 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| JP7115281B2 (ja) * | 2018-12-12 | 2022-08-09 | 信越化学工業株式会社 | フォトマスクブランク、及びフォトマスクの製造方法 |
| CN113614636A (zh) * | 2019-03-07 | 2021-11-05 | Hoya株式会社 | 掩模坯料、转印用掩模的制造方法、及半导体器件的制造方法 |
| JP7437959B2 (ja) * | 2019-03-07 | 2024-02-26 | Hoya株式会社 | 修正フォトマスク、及び表示装置の製造方法 |
| JP7313166B2 (ja) | 2019-03-18 | 2023-07-24 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP7280171B2 (ja) * | 2019-12-05 | 2023-05-23 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びフォトマスク |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230971A (en) | 1991-08-08 | 1993-07-27 | E. I. Du Pont De Nemours And Company | Photomask blank and process for making a photomask blank using gradual compositional transition between strata |
| KR100322537B1 (ko) | 1999-07-02 | 2002-03-25 | 윤종용 | 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법 |
| JP2001305716A (ja) * | 2000-02-16 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスクブランクス、フォトマスク及びこれらの製造方法 |
| TW480367B (en) | 2000-02-16 | 2002-03-21 | Shinetsu Chemical Co | Photomask blank, photomask and method of manufacture |
| JP2001305713A (ja) | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
| JP3956103B2 (ja) * | 2002-02-26 | 2007-08-08 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクブランクの評価方法 |
| JP3093632U (ja) | 2002-03-01 | 2003-05-16 | Ｈｏｙａ株式会社 | ハーフトーン型位相シフトマスクブランク |
| JP2003322954A (ja) | 2002-03-01 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP2002287330A (ja) * | 2002-03-01 | 2002-10-03 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
| US7166392B2 (en) | 2002-03-01 | 2007-01-23 | Hoya Corporation | Halftone type phase shift mask blank and halftone type phase shift mask |
| JP3956116B2 (ja) | 2002-07-16 | 2007-08-08 | 信越化学工業株式会社 | フォトマスクブランクの選定方法 |
| DE10236657A1 (de) | 2002-08-09 | 2004-02-26 | Maschinenfabrik Wifag | Schnittregister-Einstellvorrichtung |
| TWI259329B (en) * | 2003-04-09 | 2006-08-01 | Hoya Corp | Method of manufacturing a photomask, and photomask blank |
| JP2005284216A (ja) | 2004-03-31 | 2005-10-13 | Shin Etsu Chem Co Ltd | 成膜用ターゲット及び位相シフトマスクブランクの製造方法 |
| JP2006048033A (ja) * | 2004-07-09 | 2006-02-16 | Hoya Corp | フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法 |
| TW200909997A (en) * | 2004-07-09 | 2009-03-01 | Hoya Corp | Photomask blank, photomask manufacturing method and semiconductor device manufacturing method |
| EP1746460B1 (en) * | 2005-07-21 | 2011-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and fabrication method thereof |
| WO2007029826A1 (ja) * | 2005-09-09 | 2007-03-15 | Hoya Corporation | フォトマスクブランクとその製造方法、及びフォトマスクの製造方法、並びに半導体装置の製造方法 |
| JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP5009590B2 (ja) * | 2006-11-01 | 2012-08-22 | Ｈｏｙａ株式会社 | マスクブランクの製造方法及びマスクの製造方法 |
| JP4989800B2 (ja) | 2008-09-27 | 2012-08-01 | Ｈｏｙａ株式会社 | マスクブランク及び転写用マスクの製造方法 |
| DE112009002348T5 (de) | 2008-09-30 | 2012-01-19 | Hoya Corporation | Fotomaskenrohling, Fotomaske, Verfahren zu deren Herstellung und Verfahren zur Herstellung eines Halbleiterbauelements |
| TWI612372B (zh) | 2009-07-16 | 2018-01-21 | Hoya Corp | 光罩基底、轉印用遮罩及轉印用遮罩之製造方法 |
| JP5704754B2 (ja) * | 2010-01-16 | 2015-04-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
| US8535855B2 (en) * | 2010-05-19 | 2013-09-17 | Hoya Corporation | Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask |
| JP5644293B2 (ja) | 2010-09-10 | 2014-12-24 | 信越化学工業株式会社 | 遷移金属ケイ素系材料膜の設計方法 |
| WO2012086744A1 (ja) | 2010-12-24 | 2012-06-28 | Hoya株式会社 | マスクブランク及びその製造方法、並びに転写用マスク及びその製造方法 |
| JP6084391B2 (ja) * | 2011-09-28 | 2017-02-22 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| EP3048484B1 (en) * | 2011-11-21 | 2020-12-23 | Shin-Etsu Chemical Co., Ltd. | Light pattern exposure method |
| JP5906143B2 (ja) * | 2012-06-27 | 2016-04-20 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| JP6100096B2 (ja) | 2013-05-29 | 2017-03-22 | Hoya株式会社 | マスクブランク、位相シフトマスク、これらの製造方法、および半導体デバイスの製造方法 |
| CN104903792B (zh) | 2013-01-15 | 2019-11-01 | Hoya株式会社 | 掩膜板坯料、相移掩膜板及其制造方法 |
| JP6005530B2 (ja) | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
| KR101504557B1 (ko) * | 2014-03-23 | 2015-03-20 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 이를 이용한 포토 마스크 |
| JP6150299B2 (ja) * | 2014-03-30 | 2017-06-21 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
| CN106200256B (zh) * | 2014-08-25 | 2020-07-10 | 株式会社 S&S Tech | 相位反转空白掩模及光掩模 |
| JP2016188958A (ja) | 2015-03-30 | 2016-11-04 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法 |
| JP5962811B2 (ja) | 2015-04-22 | 2016-08-03 | 信越化学工業株式会社 | 光パターン照射方法 |
| SG11201803116UA (en) | 2015-11-06 | 2018-05-30 | Hoya Corp | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
-
2016
- 2016-10-26 SG SG11201803116UA patent/SG11201803116UA/en unknown
- 2016-10-26 JP JP2017505665A patent/JP6158460B1/ja active Active
- 2016-10-26 SG SG10201911774WA patent/SG10201911774WA/en unknown
- 2016-10-26 KR KR1020187010498A patent/KR102368405B1/ko active IP Right Grant
- 2016-10-26 KR KR1020227006086A patent/KR102398583B1/ko active IP Right Grant
- 2016-10-26 WO PCT/JP2016/081710 patent/WO2017077915A1/ja active Application Filing
- 2016-10-26 US US15/769,116 patent/US10915016B2/en active Active
- 2016-10-26 KR KR1020227015906A patent/KR102416957B1/ko active IP Right Grant
- 2016-10-26 SG SG10201908855R patent/SG10201908855RA/en unknown
- 2016-10-28 TW TW107123882A patent/TWI666509B/zh active
- 2016-10-28 TW TW105135121A patent/TWI632422B/zh active
- 2016-10-28 TW TW108119959A patent/TWI696882B/zh active
-
2017
- 2017-06-02 JP JP2017109877A patent/JP6325153B2/ja active Active
-
2018
- 2018-04-06 JP JP2018073753A patent/JP6759270B2/ja active Active
-
2020
- 2020-12-21 US US17/128,499 patent/US11630388B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI696882B (zh) | 2020-06-21 |
| SG10201908855RA (en) | 2019-10-30 |
| US20210149294A1 (en) | 2021-05-20 |
| KR102368405B1 (ko) | 2022-02-28 |
| JP2018120245A (ja) | 2018-08-02 |
| SG11201803116UA (en) | 2018-05-30 |
| TW201835674A (zh) | 2018-10-01 |
| KR102416957B1 (ko) | 2022-07-05 |
| JP2017146628A (ja) | 2017-08-24 |
| TW201727355A (zh) | 2017-08-01 |
| TWI632422B (zh) | 2018-08-11 |
| JPWO2017077915A1 (ja) | 2017-11-02 |
| TWI666509B (zh) | 2019-07-21 |
| KR20220025954A (ko) | 2022-03-03 |
| KR20220066426A (ko) | 2022-05-24 |
| JP6759270B2 (ja) | 2020-09-23 |
| US11630388B2 (en) | 2023-04-18 |
| TW201935128A (zh) | 2019-09-01 |
| JP6158460B1 (ja) | 2017-07-05 |
| KR20180075495A (ko) | 2018-07-04 |
| WO2017077915A1 (ja) | 2017-05-11 |
| KR102398583B1 (ko) | 2022-05-17 |
| JP6325153B2 (ja) | 2018-05-16 |
| US20180299767A1 (en) | 2018-10-18 |
| US10915016B2 (en) | 2021-02-09 |
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