SG10201602447WA - Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method - Google Patents

Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method

Info

Publication number
SG10201602447WA
SG10201602447WA SG10201602447WA SG10201602447WA SG10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA
Authority
SG
Singapore
Prior art keywords
phase shift
shift mask
blank
preparing method
blank preparing
Prior art date
Application number
SG10201602447WA
Other languages
English (en)
Inventor
Yukio Inazuki
Takuro Kosaka
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201602447WA publication Critical patent/SG10201602447WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01008—Oxygen [O]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG10201602447WA 2015-03-31 2016-03-29 Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method SG10201602447WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015072766A JP6418035B2 (ja) 2015-03-31 2015-03-31 位相シフトマスクブランクス及び位相シフトマスク

Publications (1)

Publication Number Publication Date
SG10201602447WA true SG10201602447WA (en) 2016-10-28

Family

ID=55586194

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201602447WA SG10201602447WA (en) 2015-03-31 2016-03-29 Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method

Country Status (7)

Country Link
US (2) US10078260B2 (zh)
EP (1) EP3079011B1 (zh)
JP (1) JP6418035B2 (zh)
KR (1) KR102223666B1 (zh)
CN (1) CN106019808B (zh)
SG (1) SG10201602447WA (zh)
TW (1) TWI684060B (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
US10678125B2 (en) * 2016-03-02 2020-06-09 Shin-Etsu Chemical Co., Ltd. Photomask blank and method for preparing photomask
JP6743679B2 (ja) 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP6900872B2 (ja) * 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
WO2018155047A1 (ja) 2017-02-27 2018-08-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP6432636B2 (ja) * 2017-04-03 2018-12-05 凸版印刷株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP6808566B2 (ja) * 2017-04-08 2021-01-06 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP6716629B2 (ja) * 2017-05-18 2020-07-01 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びその製造方法
JP6753375B2 (ja) * 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
CN111133379B (zh) * 2017-09-21 2024-03-22 Hoya株式会社 掩模坯料、转印用掩模以及半导体器件的制造方法
JP7037919B2 (ja) * 2017-11-14 2022-03-17 アルバック成膜株式会社 マスクブランク、ハーフトーンマスクおよびその製造方法
US20210026235A1 (en) * 2018-03-26 2021-01-28 Hoya Corporation Mask blank, phase shift mask, and method for manufacturing semiconductor device
JP6938428B2 (ja) * 2018-05-30 2021-09-22 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2020013100A (ja) 2018-07-13 2020-01-23 エスアンドエス テック カンパニー リミテッド ブランクマスク、フォトマスク及びその製造方法
KR20200007623A (ko) * 2018-07-13 2020-01-22 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 이의 제조 방법
TWI816568B (zh) * 2018-11-30 2023-09-21 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7192731B2 (ja) * 2019-09-27 2022-12-20 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク
TWI707195B (zh) * 2020-02-14 2020-10-11 力晶積成電子製造股份有限公司 相位轉移光罩的製造方法
JPWO2022004456A1 (zh) 2020-06-30 2022-01-06
CN112666789B (zh) * 2020-12-02 2024-05-24 湖南普照信息材料有限公司 一种衰减型高均匀的相移光掩膜坯料及其制备方法
CN112981316A (zh) * 2021-02-05 2021-06-18 上海传芯半导体有限公司 相移反位膜掩模基版的制作方法
CN113488378A (zh) * 2021-07-21 2021-10-08 湖南普照信息材料有限公司 一种光掩模坯料及其制备方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
US6045954A (en) * 1998-06-12 2000-04-04 Industrial Technology Research Institute Formation of silicon nitride film for a phase shift mask at 193 nm
US6150286A (en) * 2000-01-03 2000-11-21 Advanced Micro Devices, Inc. Method of making an ultra thin silicon nitride film
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP3722029B2 (ja) * 2000-09-12 2005-11-30 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
JP2002169265A (ja) * 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
KR100815679B1 (ko) * 2001-11-27 2008-03-20 호야 가부시키가이샤 하프톤형 위상 시프트 마스크 블랭크, 하프톤형 위상시프트 마스크 및 그 제조방법
JP3988041B2 (ja) 2002-10-08 2007-10-10 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びその製造方法
JP4258631B2 (ja) * 2002-12-03 2009-04-30 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
DE602006021102D1 (de) 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP4551344B2 (ja) 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4764214B2 (ja) * 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
US20070243491A1 (en) * 2006-04-18 2007-10-18 Wu Wei E Method of making a semiconductor with a high transmission CVD silicon nitride phase shift mask
JP4714180B2 (ja) 2007-05-01 2011-06-29 株式会社東芝 フォトマスク管理方法、フォトマスク洗浄可能回数生成方法、及びフォトマスク管理システム
US8187187B2 (en) * 2008-07-16 2012-05-29 Siemens Medical Solutions Usa, Inc. Shear wave imaging
JP5497288B2 (ja) * 2008-12-29 2014-05-21 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP4853686B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク又はその製造中間体の検査方法、高エネルギー線の照射エネルギー量の決定方法、及びフォトマスクブランクの製造方法
JP4853685B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク又はその製造中間体の検査方法及び良否判定方法
KR101640333B1 (ko) * 2012-03-30 2016-07-15 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법
US9470971B2 (en) * 2012-05-16 2016-10-18 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
JP5739375B2 (ja) * 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法
KR102190850B1 (ko) * 2012-11-08 2020-12-14 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
JP6036590B2 (ja) * 2013-07-25 2016-11-30 富士ゼロックス株式会社 ベルト片寄抑制構造、転写装置、及び画像形成装置
DE112014003849T5 (de) 2013-08-21 2016-05-12 Dai Nippon Printing Co., Ltd. Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben
JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP2016035559A (ja) * 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク

Also Published As

Publication number Publication date
JP6418035B2 (ja) 2018-11-07
CN106019808B (zh) 2021-04-02
EP3079011A3 (en) 2016-12-21
JP2016191872A (ja) 2016-11-10
US10078260B2 (en) 2018-09-18
KR102223666B1 (ko) 2021-03-05
US20160291453A1 (en) 2016-10-06
TW201702733A (zh) 2017-01-16
CN106019808A (zh) 2016-10-12
KR20160117247A (ko) 2016-10-10
EP3079011A2 (en) 2016-10-12
US10545401B2 (en) 2020-01-28
US20180356720A1 (en) 2018-12-13
EP3079011B1 (en) 2017-11-01
TWI684060B (zh) 2020-02-01

Similar Documents

Publication Publication Date Title
SG10201602447WA (en) Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method
SG10201602443QA (en) Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask
HK1247205A1 (zh) 烯丙基苯氧基環磷腈化合物及其製造方法
SG11201803116UA (en) Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
SG11201800548TA (en) Mask blank, phase shift mask, and method for manufacturing semiconductor device
EP3689290C0 (de) Verfahren zur herstellung einer teil- oder totalprothese sowie prothese erhältlich nach diesem verfahren
SG11201706306SA (en) Compound, resist composition, and method for forming resist pattern using it
SG10201602448YA (en) Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure Method
EP3666729C0 (en) PROCESS FOR THE PRODUCTION OF NANO-SULFUR
EP3239114A4 (en) Method for producing mnzn-based ferrite, and mnzn-based ferrite
SG10201602465XA (en) Method For Preparing Halftone Phase Shift Photomask Blank
EP3372596A4 (en) METHOD FOR THE PRODUCTION OF TEDIZOLIDE, TEDIZOLIDE INTERMEDIATE PRODUCTION AND METHOD OF MANUFACTURING THEREOF
EP3235946A4 (en) Fabric having uneven-surface design, and method for producing same
SG10201606198VA (en) Halftone Phase Shift Photomask Blank, Making Method, and Halftone Phase Shift Photomask
SG10201607715RA (en) Photomask Blank, Making Method, and Photomask
PT3155157T (pt) Método para o fabrico de uma meia do tipo designado invisível, e meia feita pelo método
SG10201602528SA (en) Method For Preparing Halftone Phase Shift Photomask Blank
HK1249098A1 (zh) 用於生產氟美他酚的方法
SG10201708004UA (en) Halftone Phase Shift Photomask Blank, Making Method, And Halftone Phase Shift Photomask
SI3390969T1 (sl) Predmet, postopek za izdelavo predmeta in postopek za določanje položaja predmeta
SG10201606180YA (en) Photomask Blank And Method For Preparing Photomask
KR101881818B1 (ko) 위상반전 블랭크 마스크 및 그의 제조 방법
HK1257184A1 (zh) 膜卷裝體和膜卷裝體的製造方法
IL255093A0 (en) A method for the production of levoglucosenon
HUE050176T2 (hu) Tömör alkatrész és a készítésére szolgáló eljárás