SG10201403724PA - Semiconductor device and method of forming avertical interconnect structure for 3-d fo-wlcsp - Google Patents
Semiconductor device and method of forming avertical interconnect structure for 3-d fo-wlcspInfo
- Publication number
- SG10201403724PA SG10201403724PA SG10201403724PA SG10201403724PA SG10201403724PA SG 10201403724P A SG10201403724P A SG 10201403724PA SG 10201403724P A SG10201403724P A SG 10201403724PA SG 10201403724P A SG10201403724P A SG 10201403724PA SG 10201403724P A SG10201403724P A SG 10201403724PA
- Authority
- SG
- Singapore
- Prior art keywords
- wlcsp
- avertical
- forming
- semiconductor device
- interconnect structure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
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US13/191,318 US9082806B2 (en) | 2008-12-12 | 2011-07-26 | Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP |
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SG2012005575A SG183606A1 (en) | 2011-02-10 | 2012-01-26 | Semiconductor device and method of forming avertical interconnect structure for 3-d fo-wlcsp |
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US (2) | US9082806B2 (zh) |
CN (1) | CN102637608B (zh) |
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US20110278736A1 (en) | 2011-11-17 |
SG183606A1 (en) | 2012-09-27 |
TWI538072B (zh) | 2016-06-11 |
US9847324B2 (en) | 2017-12-19 |
CN102637608A (zh) | 2012-08-15 |
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