SE439214B - Forfarande for framstellning av ett elektriskt ledande monster, innefattande ett skikt av titan- eller tantalsilicid, over ett skikt av polykristallint kisel - Google Patents

Forfarande for framstellning av ett elektriskt ledande monster, innefattande ett skikt av titan- eller tantalsilicid, over ett skikt av polykristallint kisel

Info

Publication number
SE439214B
SE439214B SE7910379A SE7910379A SE439214B SE 439214 B SE439214 B SE 439214B SE 7910379 A SE7910379 A SE 7910379A SE 7910379 A SE7910379 A SE 7910379A SE 439214 B SE439214 B SE 439214B
Authority
SE
Sweden
Prior art keywords
layer
electrically conductive
silicide
areas
thickness
Prior art date
Application number
SE7910379A
Other languages
English (en)
Swedish (sv)
Other versions
SE7910379L (sv
Inventor
H J Levinstein
S P Murarka
A K Sinha
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE7910379L publication Critical patent/SE7910379L/xx
Publication of SE439214B publication Critical patent/SE439214B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
SE7910379A 1978-12-29 1979-12-17 Forfarande for framstellning av ett elektriskt ledande monster, innefattande ett skikt av titan- eller tantalsilicid, over ett skikt av polykristallint kisel SE439214B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/974,378 US4276557A (en) 1978-12-29 1978-12-29 Integrated semiconductor circuit structure and method for making it

Publications (2)

Publication Number Publication Date
SE7910379L SE7910379L (sv) 1980-06-30
SE439214B true SE439214B (sv) 1985-06-03

Family

ID=25521962

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7910379A SE439214B (sv) 1978-12-29 1979-12-17 Forfarande for framstellning av ett elektriskt ledande monster, innefattande ett skikt av titan- eller tantalsilicid, over ett skikt av polykristallint kisel

Country Status (10)

Country Link
US (1) US4276557A (ja)
JP (1) JPS55108752A (ja)
CA (1) CA1136771A (ja)
DE (1) DE2951734A1 (ja)
FR (1) FR2445625B1 (ja)
GB (1) GB2038552B (ja)
IE (1) IE48724B1 (ja)
IT (1) IT1127770B (ja)
NL (1) NL184136C (ja)
SE (1) SE439214B (ja)

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US4337476A (en) * 1980-08-18 1982-06-29 Bell Telephone Laboratories, Incorporated Silicon rich refractory silicides as gate metal
JPS5737888A (en) * 1980-08-19 1982-03-02 Mitsubishi Electric Corp Photo detector
US4398335A (en) * 1980-12-09 1983-08-16 Fairchild Camera & Instrument Corporation Multilayer metal silicide interconnections for integrated circuits
DE3268922D1 (en) * 1981-05-04 1986-03-20 Motorola Inc Low resistivity composite metallization for semiconductor devices and method therefor
JPS584924A (ja) * 1981-07-01 1983-01-12 Hitachi Ltd 半導体装置の電極形成方法
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
JPS5873156A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 半導体装置
US4816425A (en) * 1981-11-19 1989-03-28 Texas Instruments Incorporated Polycide process for integrated circuits
US4495512A (en) * 1982-06-07 1985-01-22 International Business Machines Corporation Self-aligned bipolar transistor with inverted polycide base contact
DE3382482D1 (de) * 1982-09-30 1992-01-30 Advanced Micro Devices Inc Aluminium-metall-silicid-verbindungsstruktur fuer integrierte schaltungen und deren herstellungsverfahren.
US5136361A (en) * 1982-09-30 1992-08-04 Advanced Micro Devices, Inc. Stratified interconnect structure for integrated circuits
US4920908A (en) * 1983-03-29 1990-05-01 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
DE3326142A1 (de) * 1983-07-20 1985-01-31 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einer aus aluminium oder aus einer aluminiumlegierung bestehenden aeusseren kontaktleiterbahnebene
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JPS60134466A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置およびその製造方法
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US4581815A (en) * 1984-03-01 1986-04-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer and method of making same
US4555842A (en) * 1984-03-19 1985-12-03 At&T Bell Laboratories Method of fabricating VLSI CMOS devices having complementary threshold voltages
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
US4569722A (en) * 1984-11-23 1986-02-11 At&T Bell Laboratories Ethylene glycol etch for processes using metal silicides
US4612258A (en) * 1984-12-21 1986-09-16 Zilog, Inc. Method for thermally oxidizing polycide substrates in a dry oxygen environment and semiconductor circuit structures produced thereby
US4597163A (en) * 1984-12-21 1986-07-01 Zilog, Inc. Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures
JPS61164262A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 半導体装置
US4725872A (en) * 1985-02-25 1988-02-16 Tektronix, Inc. Fast channel single phase buried channel CCD
EP0222795B1 (en) * 1985-05-03 1990-09-26 AT&T Corp. Polycide process in semiconductor fabrication
US4782033A (en) * 1985-11-27 1988-11-01 Siemens Aktiengesellschaft Process for producing CMOS having doped polysilicon gate by outdiffusion of boron from implanted silicide gate
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
US4811067A (en) * 1986-05-02 1989-03-07 International Business Machines Corporation High density vertically structured memory
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US4974056A (en) * 1987-05-22 1990-11-27 International Business Machines Corporation Stacked metal silicide gate structure with barrier
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JPH0758773B2 (ja) * 1989-07-14 1995-06-21 三菱電機株式会社 半導体装置の製造方法及び半導体装置
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US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
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US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5581111A (en) 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
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US5474619A (en) * 1994-05-04 1995-12-12 The United States Of America As Represented By The Secretary Of Commerce Thin film high temperature silicide thermocouples
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US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
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US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance

Also Published As

Publication number Publication date
GB2038552B (en) 1983-04-13
DE2951734A1 (de) 1980-07-10
JPS55108752A (en) 1980-08-21
CA1136771A (en) 1982-11-30
JPS6260812B2 (ja) 1987-12-18
NL184136B (nl) 1988-11-16
IE792525L (en) 1980-06-29
DE2951734C2 (ja) 1988-02-04
NL184136C (nl) 1989-04-17
FR2445625B1 (fr) 1985-10-18
IT7928441A0 (it) 1979-12-28
SE7910379L (sv) 1980-06-30
IE48724B1 (en) 1985-05-01
FR2445625A1 (fr) 1980-07-25
GB2038552A (en) 1980-07-23
IT1127770B (it) 1986-05-21
US4276557A (en) 1981-06-30
NL7909363A (nl) 1980-07-01

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