FR2445625A1 - Dispositif integre a semi-conducteurs comportant un motif conducteur qui comprend une couche de silicium polycristallin - Google Patents
Dispositif integre a semi-conducteurs comportant un motif conducteur qui comprend une couche de silicium polycristallinInfo
- Publication number
- FR2445625A1 FR2445625A1 FR7931963A FR7931963A FR2445625A1 FR 2445625 A1 FR2445625 A1 FR 2445625A1 FR 7931963 A FR7931963 A FR 7931963A FR 7931963 A FR7931963 A FR 7931963A FR 2445625 A1 FR2445625 A1 FR 2445625A1
- Authority
- FR
- France
- Prior art keywords
- polycrystalline silicon
- layer
- semiconductor device
- conductive pattern
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910021341 titanium silicide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Abstract
L'invention concerne la fabrication des dispositifs à semi-conducteurs. Le motif conducteur d'un dispositif à semi-conducteurs comprend une couche de silicium polycristallin 42 recouverte par une couche de siliciure de titane ou de siliciure de tantale 43. Cette configuration améliore la conductivité du silicium polycristallin proprement dit, et permet de former facilement une couche de dioxyde de silicium 44 par traitement thermique, pour assurer l'isolation pour- une couche de métallisation 46. Application à la fabrication des circuits intégrés.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/974,378 US4276557A (en) | 1978-12-29 | 1978-12-29 | Integrated semiconductor circuit structure and method for making it |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2445625A1 true FR2445625A1 (fr) | 1980-07-25 |
FR2445625B1 FR2445625B1 (fr) | 1985-10-18 |
Family
ID=25521962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7931963A Expired FR2445625B1 (fr) | 1978-12-29 | 1979-12-28 | Dispositif integre a semi-conducteurs comportant un motif conducteur qui comprend une couche de silicium polycristallin |
Country Status (10)
Country | Link |
---|---|
US (1) | US4276557A (fr) |
JP (1) | JPS55108752A (fr) |
CA (1) | CA1136771A (fr) |
DE (1) | DE2951734A1 (fr) |
FR (1) | FR2445625B1 (fr) |
GB (1) | GB2038552B (fr) |
IE (1) | IE48724B1 (fr) |
IT (1) | IT1127770B (fr) |
NL (1) | NL184136C (fr) |
SE (1) | SE439214B (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0043451A2 (fr) * | 1980-06-30 | 1982-01-13 | International Business Machines Corporation | Procédé pour former sélectivement des couches de siliciure d'un métal réfractaire sur des dispositifs semiconducteurs |
EP0055161A1 (fr) * | 1980-12-09 | 1982-06-30 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Interconnexions multicouches à siliciure métallique pour circuits intégrés |
EP0139371A1 (fr) * | 1983-08-12 | 1985-05-02 | Tektronix, Inc. | Procédé pour fabriquer un circuit intégré de type MOS utilisant une méthode pour former des couches en siliciure de métaux réfractaires |
WO1986006877A1 (fr) * | 1985-05-03 | 1986-11-20 | American Telephone & Telegraph Company | Traitement des polyciures dans la fabrication de semiconducteurs |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE32207E (en) * | 1978-12-29 | 1986-07-15 | At&T Bell Laboratories | Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide |
US4337476A (en) * | 1980-08-18 | 1982-06-29 | Bell Telephone Laboratories, Incorporated | Silicon rich refractory silicides as gate metal |
JPS5737888A (en) * | 1980-08-19 | 1982-03-02 | Mitsubishi Electric Corp | Photo detector |
DE3268922D1 (en) * | 1981-05-04 | 1986-03-20 | Motorola Inc | Low resistivity composite metallization for semiconductor devices and method therefor |
JPS584924A (ja) * | 1981-07-01 | 1983-01-12 | Hitachi Ltd | 半導体装置の電極形成方法 |
US4359490A (en) * | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
JPS5873156A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | 半導体装置 |
US4816425A (en) * | 1981-11-19 | 1989-03-28 | Texas Instruments Incorporated | Polycide process for integrated circuits |
US4495512A (en) * | 1982-06-07 | 1985-01-22 | International Business Machines Corporation | Self-aligned bipolar transistor with inverted polycide base contact |
EP0120918B1 (fr) * | 1982-09-30 | 1991-12-18 | Advanced Micro Devices, Inc. | Structure d'interconnexion en siliciure metallique-aluminium pour circuits integres et son procede de fabrication |
US5136361A (en) * | 1982-09-30 | 1992-08-04 | Advanced Micro Devices, Inc. | Stratified interconnect structure for integrated circuits |
US4920908A (en) * | 1983-03-29 | 1990-05-01 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
US4565157A (en) * | 1983-03-29 | 1986-01-21 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
DE3326142A1 (de) * | 1983-07-20 | 1985-01-31 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung mit einer aus aluminium oder aus einer aluminiumlegierung bestehenden aeusseren kontaktleiterbahnebene |
US4641170A (en) * | 1983-12-12 | 1987-02-03 | International Business Machines Corporation | Self-aligned lateral bipolar transistors |
JPS60134466A (ja) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | 半導体装置およびその製造方法 |
US4693925A (en) * | 1984-03-01 | 1987-09-15 | Advanced Micro Devices, Inc. | Integrated circuit structure having intermediate metal silicide layer |
US4581815A (en) * | 1984-03-01 | 1986-04-15 | Advanced Micro Devices, Inc. | Integrated circuit structure having intermediate metal silicide layer and method of making same |
US4555842A (en) * | 1984-03-19 | 1985-12-03 | At&T Bell Laboratories | Method of fabricating VLSI CMOS devices having complementary threshold voltages |
KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
US4569722A (en) * | 1984-11-23 | 1986-02-11 | At&T Bell Laboratories | Ethylene glycol etch for processes using metal silicides |
US4612258A (en) * | 1984-12-21 | 1986-09-16 | Zilog, Inc. | Method for thermally oxidizing polycide substrates in a dry oxygen environment and semiconductor circuit structures produced thereby |
US4597163A (en) * | 1984-12-21 | 1986-07-01 | Zilog, Inc. | Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures |
JPS61164262A (ja) * | 1985-01-17 | 1986-07-24 | Toshiba Corp | 半導体装置 |
US4725872A (en) * | 1985-02-25 | 1988-02-16 | Tektronix, Inc. | Fast channel single phase buried channel CCD |
US4782033A (en) * | 1985-11-27 | 1988-11-01 | Siemens Aktiengesellschaft | Process for producing CMOS having doped polysilicon gate by outdiffusion of boron from implanted silicide gate |
US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
US4811067A (en) * | 1986-05-02 | 1989-03-07 | International Business Machines Corporation | High density vertically structured memory |
US4974046A (en) * | 1986-07-02 | 1990-11-27 | National Seimconductor Corporation | Bipolar transistor with polysilicon stringer base contact |
US5063168A (en) * | 1986-07-02 | 1991-11-05 | National Semiconductor Corporation | Process for making bipolar transistor with polysilicon stringer base contact |
US4974056A (en) * | 1987-05-22 | 1990-11-27 | International Business Machines Corporation | Stacked metal silicide gate structure with barrier |
JPH0258874A (ja) * | 1988-08-24 | 1990-02-28 | Nec Corp | 半導体集積回路装置 |
JPH02285638A (ja) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | 半導体装置 |
JPH0758773B2 (ja) * | 1989-07-14 | 1995-06-21 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
US5139966A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Low resistance silicided substrate contact |
US5290396A (en) * | 1991-06-06 | 1994-03-01 | Lsi Logic Corporation | Trench planarization techniques |
US5413966A (en) * | 1990-12-20 | 1995-05-09 | Lsi Logic Corporation | Shallow trench etch |
US5322812A (en) | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
US5225358A (en) * | 1991-06-06 | 1993-07-06 | Lsi Logic Corporation | Method of forming late isolation with polishing |
US5248625A (en) * | 1991-06-06 | 1993-09-28 | Lsi Logic Corporation | Techniques for forming isolation structures |
US5252503A (en) * | 1991-06-06 | 1993-10-12 | Lsi Logic Corporation | Techniques for forming isolation structures |
US5581111A (en) | 1993-07-07 | 1996-12-03 | Actel Corporation | Dielectric-polysilicon-dielectric antifuse for field programmable logic applications |
US5485031A (en) | 1993-11-22 | 1996-01-16 | Actel Corporation | Antifuse structure suitable for VLSI application |
US5474619A (en) * | 1994-05-04 | 1995-12-12 | The United States Of America As Represented By The Secretary Of Commerce | Thin film high temperature silicide thermocouples |
US5986322A (en) * | 1995-06-06 | 1999-11-16 | Mccollum; John L. | Reduced leakage antifuse structure |
JP3355127B2 (ja) * | 1998-02-23 | 2002-12-09 | 株式会社日立製作所 | 熱式空気流量センサ |
US6586318B1 (en) * | 1999-12-28 | 2003-07-01 | Xerox Corporation | Thin phosphorus nitride film as an N-type doping source used in laser doping technology |
US9111729B2 (en) | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
US9190289B2 (en) * | 2010-02-26 | 2015-11-17 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
US9155181B2 (en) | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US8999104B2 (en) | 2010-08-06 | 2015-04-07 | Lam Research Corporation | Systems, methods and apparatus for separate plasma source control |
US9967965B2 (en) | 2010-08-06 | 2018-05-08 | Lam Research Corporation | Distributed, concentric multi-zone plasma source systems, methods and apparatus |
US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US9177762B2 (en) | 2011-11-16 | 2015-11-03 | Lam Research Corporation | System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing |
US10283325B2 (en) | 2012-10-10 | 2019-05-07 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2325192A1 (fr) * | 1975-09-17 | 1977-04-15 | Philips Nv | Procede pour la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur fabrique de la sorte |
US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
-
1978
- 1978-12-29 US US05/974,378 patent/US4276557A/en not_active Expired - Lifetime
-
1979
- 1979-12-13 GB GB7942992A patent/GB2038552B/en not_active Expired
- 1979-12-17 SE SE7910379A patent/SE439214B/sv not_active IP Right Cessation
- 1979-12-20 CA CA000342383A patent/CA1136771A/fr not_active Expired
- 1979-12-21 DE DE19792951734 patent/DE2951734A1/de active Granted
- 1979-12-28 FR FR7931963A patent/FR2445625B1/fr not_active Expired
- 1979-12-28 JP JP17393979A patent/JPS55108752A/ja active Granted
- 1979-12-28 IE IE2525/79A patent/IE48724B1/en not_active IP Right Cessation
- 1979-12-28 NL NLAANVRAGE7909363,A patent/NL184136C/xx not_active IP Right Cessation
- 1979-12-28 IT IT28441/79A patent/IT1127770B/it active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2325192A1 (fr) * | 1975-09-17 | 1977-04-15 | Philips Nv | Procede pour la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur fabrique de la sorte |
US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
Non-Patent Citations (1)
Title |
---|
EXBK/74 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0043451A2 (fr) * | 1980-06-30 | 1982-01-13 | International Business Machines Corporation | Procédé pour former sélectivement des couches de siliciure d'un métal réfractaire sur des dispositifs semiconducteurs |
EP0043451A3 (en) * | 1980-06-30 | 1984-07-25 | International Business Machines Corporation | Process for selectively forming refractory metal silicide layers on semiconductor devices |
EP0055161A1 (fr) * | 1980-12-09 | 1982-06-30 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Interconnexions multicouches à siliciure métallique pour circuits intégrés |
EP0139371A1 (fr) * | 1983-08-12 | 1985-05-02 | Tektronix, Inc. | Procédé pour fabriquer un circuit intégré de type MOS utilisant une méthode pour former des couches en siliciure de métaux réfractaires |
WO1986006877A1 (fr) * | 1985-05-03 | 1986-11-20 | American Telephone & Telegraph Company | Traitement des polyciures dans la fabrication de semiconducteurs |
Also Published As
Publication number | Publication date |
---|---|
NL184136C (nl) | 1989-04-17 |
IE792525L (en) | 1980-06-29 |
DE2951734C2 (fr) | 1988-02-04 |
FR2445625B1 (fr) | 1985-10-18 |
DE2951734A1 (de) | 1980-07-10 |
GB2038552A (en) | 1980-07-23 |
JPS6260812B2 (fr) | 1987-12-18 |
IE48724B1 (en) | 1985-05-01 |
GB2038552B (en) | 1983-04-13 |
CA1136771A (fr) | 1982-11-30 |
SE439214B (sv) | 1985-06-03 |
IT7928441A0 (it) | 1979-12-28 |
SE7910379L (sv) | 1980-06-30 |
NL184136B (nl) | 1988-11-16 |
NL7909363A (nl) | 1980-07-01 |
IT1127770B (it) | 1986-05-21 |
US4276557A (en) | 1981-06-30 |
JPS55108752A (en) | 1980-08-21 |
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