JPS6417471A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6417471A
JPS6417471A JP17284087A JP17284087A JPS6417471A JP S6417471 A JPS6417471 A JP S6417471A JP 17284087 A JP17284087 A JP 17284087A JP 17284087 A JP17284087 A JP 17284087A JP S6417471 A JPS6417471 A JP S6417471A
Authority
JP
Japan
Prior art keywords
layer
titanium
prevent
heat treatment
silicide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17284087A
Other languages
Japanese (ja)
Inventor
Tatsuzo Kawaguchi
Shigeki Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17284087A priority Critical patent/JPS6417471A/en
Publication of JPS6417471A publication Critical patent/JPS6417471A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent titanium atoms in titanium silicide from invading a gate oxide film during heat treatment by providing a molybdenum silicide layer between a polycrystalline silicon layer for forming a gate electrode and a titanium silicide layer. CONSTITUTION:In a MOS transistor in which source, drain regions 12, a gate oxide film 14 and a gate electrode 15 are formed on a semiconductor substrate 10, the electrode 15 is formed of a polycrystalline silicon layer 16, a molybdenum silicide layer 17, a titanium silicide layer 18 and a molybdenum silicide layer 19. The layer 17 prevents titanium atoms in the layer 18 from diffusing in the layer 16 during heat treating from arriving at the film 14. As a result, it can prevent a gate breakdown strength after a heat temperature heat treatment from deteriorating. Further, the layer 19 is provided to prevent the surface of the layer 18 from generating a roughness or an abnormal oxidation due to the heat treatment.
JP17284087A 1987-07-13 1987-07-13 Semiconductor device Pending JPS6417471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17284087A JPS6417471A (en) 1987-07-13 1987-07-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17284087A JPS6417471A (en) 1987-07-13 1987-07-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6417471A true JPS6417471A (en) 1989-01-20

Family

ID=15949307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17284087A Pending JPS6417471A (en) 1987-07-13 1987-07-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6417471A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5559314A (en) * 1993-09-22 1996-09-24 Kabushiki Kaisha Toshiba Recording medium using reversible recording material and method of processing record to recording medium
US6774023B1 (en) * 1992-05-30 2004-08-10 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device having a multilayer structure including a dual-layer silicide

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6774023B1 (en) * 1992-05-30 2004-08-10 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device having a multilayer structure including a dual-layer silicide
US5559314A (en) * 1993-09-22 1996-09-24 Kabushiki Kaisha Toshiba Recording medium using reversible recording material and method of processing record to recording medium
US5597998A (en) * 1993-09-22 1997-01-28 Kabushiki Kaisha Toshiba Recording medium using reversible recording material and method of processing record to recording medium

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