KR940016740A - MOSFET manufacturing method - Google Patents

MOSFET manufacturing method Download PDF

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Publication number
KR940016740A
KR940016740A KR1019920027061A KR920027061A KR940016740A KR 940016740 A KR940016740 A KR 940016740A KR 1019920027061 A KR1019920027061 A KR 1019920027061A KR 920027061 A KR920027061 A KR 920027061A KR 940016740 A KR940016740 A KR 940016740A
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KR
South Korea
Prior art keywords
oxide film
transition metal
gate electrode
mosfet
film
Prior art date
Application number
KR1019920027061A
Other languages
Korean (ko)
Other versions
KR960000518B1 (en
Inventor
이병창
기영종
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920027061A priority Critical patent/KR960000518B1/en
Publication of KR940016740A publication Critical patent/KR940016740A/en
Application granted granted Critical
Publication of KR960000518B1 publication Critical patent/KR960000518B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 MOSFET 제조방법에 관한 것으로, 게이트전극 측벽 및 상부면에 실리사이드를 형성하고, 필드산화막 상부의 실리사이드화 되지 않은 전이금속막을 전이금속 산화막으로 형성하여 소자의 동작속도를 개선하고,입자등에 의해 소프트 에라가 발생하는 것을 감소시킬 수 있는 기술이다.The present invention relates to a MOSFET manufacturing method, and to form a silicide on the gate electrode sidewall and the upper surface, and to form a non-silicided transition metal film on the field oxide film as a transition metal oxide film to improve the operation speed of the device, It is a technique that can reduce the occurrence of soft erra by particles and the like.

Description

모스펫트(MOSFET) 제조방법MOSFET manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2D도는 본 발명에 의해 실리사이드가 형성된 MOSFET를 제조하는 단계를 도시한 단면도.2A to 2D are cross-sectional views illustrating steps of manufacturing a silicide-formed MOSFET according to the present invention.

Claims (1)

MOSFET 제조방법에 있어서, 실리콘기판 상부에 필드산화막을 형성하고, 게이트 산화막, 게이트 전극용 폴리실리콘층 패턴, 소오스/드레인으로 구비되는 MOSFET를 형성하는 단계와, 전체구조 상부에 전이금속막과 실리콘 산화막을 예정된 두께로 적층하고, 약 500~1,000℃의 온도에서 열처리하여 게이트전극용 폴리실리콘층 패턴과 소오스/드레인의 표면내부에 실리사이드를 형성하는 단계와, 실리콘 산화막을 완전히 식각하고, 산소원자를 이온주입하고, 연속적으로 산소분위기에서 약 500~950℃의 온도에서 열처리하여 실리사이드화 되지 않은 전이금속막을 전이금속 산화막으로 형성하는 단계를 포함하는 것을 특징으로 하는 MOSFET 제조방법.A method of fabricating a MOSFET, comprising: forming a field oxide film on a silicon substrate, forming a MOSFET including a gate oxide film, a polysilicon layer pattern for a gate electrode, and a source / drain, and a transition metal film and a silicon oxide film over the entire structure Layered to a predetermined thickness and heat-treated at a temperature of about 500 to 1,000 ° C. to form silicide inside the surface of the polysilicon layer pattern for the gate electrode and the source / drain, completely etch the silicon oxide film, and ionize oxygen atoms. Injecting and continuously heat-treating at an oxygen atmosphere at a temperature of about 500 to 950 ° C. to form a non-silicided transition metal film as a transition metal oxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920027061A 1992-12-31 1992-12-31 Mosfet manufacturing process KR960000518B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920027061A KR960000518B1 (en) 1992-12-31 1992-12-31 Mosfet manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920027061A KR960000518B1 (en) 1992-12-31 1992-12-31 Mosfet manufacturing process

Publications (2)

Publication Number Publication Date
KR940016740A true KR940016740A (en) 1994-07-25
KR960000518B1 KR960000518B1 (en) 1996-01-08

Family

ID=19348209

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920027061A KR960000518B1 (en) 1992-12-31 1992-12-31 Mosfet manufacturing process

Country Status (1)

Country Link
KR (1) KR960000518B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990012160A (en) * 1997-07-28 1999-02-25 윤종용 Morse element having a source / drain silicide and a method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990012160A (en) * 1997-07-28 1999-02-25 윤종용 Morse element having a source / drain silicide and a method of manufacturing the same

Also Published As

Publication number Publication date
KR960000518B1 (en) 1996-01-08

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