SE0601692L - Halvledaranordning av kiselkarbidtyp med hög kanalmobilitet och förfarande för att framställa densamma - Google Patents
Halvledaranordning av kiselkarbidtyp med hög kanalmobilitet och förfarande för att framställa densammaInfo
- Publication number
- SE0601692L SE0601692L SE0601692A SE0601692A SE0601692L SE 0601692 L SE0601692 L SE 0601692L SE 0601692 A SE0601692 A SE 0601692A SE 0601692 A SE0601692 A SE 0601692A SE 0601692 L SE0601692 L SE 0601692L
- Authority
- SE
- Sweden
- Prior art keywords
- sup
- semiconductor device
- silicon carbide
- carbide semiconductor
- producing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005251365 | 2005-08-31 | ||
JP2006162448A JP2007096263A (ja) | 2005-08-31 | 2006-06-12 | 炭化珪素半導体装置およびその製造方法。 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE0601692L true SE0601692L (sv) | 2007-03-01 |
SE533179C2 SE533179C2 (sv) | 2010-07-13 |
Family
ID=37802808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0601692A SE533179C2 (sv) | 2005-08-31 | 2006-08-17 | Halvledaranordning av kiselkarbidtyp med hög kanalmobilitet och förfarande för att framställa densamma |
Country Status (6)
Country | Link |
---|---|
US (2) | US7993966B2 (sv) |
JP (1) | JP2007096263A (sv) |
KR (1) | KR100795852B1 (sv) |
CN (1) | CN1925169B (sv) |
DE (1) | DE102006040818A1 (sv) |
SE (1) | SE533179C2 (sv) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5098294B2 (ja) * | 2006-10-30 | 2012-12-12 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP5098295B2 (ja) * | 2006-10-30 | 2012-12-12 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US8076736B2 (en) * | 2007-02-14 | 2011-12-13 | Panasonic Corporation | Semiconductor device and method for manufacturing the same |
JP4412335B2 (ja) * | 2007-02-23 | 2010-02-10 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2008244455A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2008244456A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP4367508B2 (ja) * | 2007-03-13 | 2009-11-18 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US7772098B2 (en) | 2007-03-29 | 2010-08-10 | Panasonic Corporation | Method for manufacturing semiconductor device |
JP4971340B2 (ja) * | 2007-03-29 | 2012-07-11 | パナソニック株式会社 | 炭化珪素半導体素子の製造方法 |
US7718475B2 (en) * | 2007-04-13 | 2010-05-18 | Qimonda Ag | Method for manufacturing an integrated circuit including a transistor |
JP4539684B2 (ja) * | 2007-06-21 | 2010-09-08 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP2009016601A (ja) * | 2007-07-05 | 2009-01-22 | Denso Corp | 炭化珪素半導体装置 |
US8167166B2 (en) * | 2007-11-23 | 2012-05-01 | Peninsula Packaging, Llc | Container |
US8091731B2 (en) * | 2007-11-28 | 2012-01-10 | Peninsula Packaging, Llc | Container |
US8261933B2 (en) * | 2007-11-28 | 2012-09-11 | Peninsula Packaging, Llc | Container |
JP5157843B2 (ja) * | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
WO2009104299A1 (ja) * | 2008-02-22 | 2009-08-27 | 住友電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
JP5728153B2 (ja) * | 2008-09-26 | 2015-06-03 | 株式会社東芝 | 半導体装置の製造方法 |
JP2010087397A (ja) * | 2008-10-02 | 2010-04-15 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
TW201108414A (en) * | 2009-04-10 | 2011-03-01 | Sumitomo Electric Industries | Insulated gate bipolar transistor |
US20110180446A1 (en) * | 2010-01-28 | 2011-07-28 | Peninsula Packaging, Llc | Container for produce storage, packing & transport |
CN102386121B (zh) * | 2010-09-01 | 2014-11-05 | 无锡华润上华半导体有限公司 | 半导体器件和半导体埋层的制造方法 |
KR20130055981A (ko) * | 2011-11-21 | 2013-05-29 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조 방법 |
JP5611184B2 (ja) * | 2011-12-14 | 2014-10-22 | 三菱電機株式会社 | 半導体装置の製造における熱処理方法 |
JP5975460B2 (ja) * | 2012-01-31 | 2016-08-23 | 国立研究開発法人産業技術総合研究所 | 炭化ケイ素半導体装置の製造方法 |
JP2013157539A (ja) * | 2012-01-31 | 2013-08-15 | National Institute Of Advanced Industrial & Technology | 炭化ケイ素半導体装置の製造方法 |
JP5888064B2 (ja) * | 2012-03-29 | 2016-03-16 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP6245723B2 (ja) * | 2012-04-27 | 2017-12-13 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP6074785B2 (ja) * | 2012-04-27 | 2017-02-08 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
US9257283B2 (en) | 2012-08-06 | 2016-02-09 | General Electric Company | Device having reduced bias temperature instability (BTI) |
US9379202B2 (en) * | 2012-11-12 | 2016-06-28 | Nvidia Corporation | Decoupling capacitors for interposers |
JP2014116350A (ja) * | 2012-12-06 | 2014-06-26 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
JP5920275B2 (ja) | 2013-04-08 | 2016-05-18 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP2014207403A (ja) | 2013-04-16 | 2014-10-30 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2015015352A (ja) | 2013-07-04 | 2015-01-22 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
USD730726S1 (en) | 2013-11-27 | 2015-06-02 | Peninsula Packaging, Llc | Container |
USD742218S1 (en) | 2014-03-20 | 2015-11-03 | Peninsula Packaging Company, Llc | Container |
USD738205S1 (en) | 2014-04-08 | 2015-09-08 | Peninsula Packaging, Llc | Container |
USD759478S1 (en) | 2014-06-04 | 2016-06-21 | Peninsula Packaging, Llc | Container |
USD743784S1 (en) | 2014-06-11 | 2015-11-24 | Peninsula Packaging Company, Llc | Container |
JP6432232B2 (ja) * | 2014-09-11 | 2018-12-05 | 富士電機株式会社 | 炭化ケイ素半導体装置および炭化ケイ素半導体装置の製造方法 |
USD747962S1 (en) | 2015-02-03 | 2016-01-26 | Peninsula Packaging Company, Llc | Container |
USD741705S1 (en) | 2015-02-03 | 2015-10-27 | Peninsula Packaging Company, Llc | Container |
USD741707S1 (en) | 2015-02-03 | 2015-10-27 | Peninsula Packaging Company, Llc | Container |
USD741706S1 (en) | 2015-02-03 | 2015-10-27 | Peninsula Packaging Company, Llc | Container |
USD746131S1 (en) | 2015-02-03 | 2015-12-29 | Peninsula Packaging Company, Llc | Container |
USD746675S1 (en) | 2015-02-03 | 2016-01-05 | Peninsula Packaging Company, Llc | Container |
USD798706S1 (en) | 2015-02-27 | 2017-10-03 | Sonoco Development, Inc. | Container |
USD792785S1 (en) | 2015-10-23 | 2017-07-25 | Sonoco Development, Inc. | Container |
USD789786S1 (en) | 2016-01-11 | 2017-06-20 | Sonoco Development, Inc. | Container |
JP6578994B2 (ja) * | 2016-03-04 | 2019-09-25 | 株式会社デンソー | 炭化珪素にて構成される半導体基板およびその製造方法 |
CN108231559A (zh) * | 2016-12-09 | 2018-06-29 | 全球能源互联网研究院 | 一种接触电极制备方法及mosfet功率器件 |
JP6828449B2 (ja) | 2017-01-17 | 2021-02-10 | 株式会社デンソー | 半導体装置およびその製造方法 |
EP4333073A1 (en) * | 2022-08-29 | 2024-03-06 | STMicroelectronics S.r.l. | Sic-based electronic device with improved gate dielectric and manufacturing method thereof, diode |
CN116153789B (zh) * | 2023-01-17 | 2023-08-29 | 浙江大学 | 一种改善4H-SiC MOSFET沟道载流子迁移率及栅极漏电的工艺方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2910573B2 (ja) * | 1993-09-10 | 1999-06-23 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
US5736753A (en) * | 1994-09-12 | 1998-04-07 | Hitachi, Ltd. | Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide |
FR2738394B1 (fr) * | 1995-09-06 | 1998-06-26 | Nippon Denso Co | Dispositif a semi-conducteur en carbure de silicium, et son procede de fabrication |
US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
JP3420876B2 (ja) * | 1996-01-22 | 2003-06-30 | 新日本製鐵株式会社 | SiCの熱酸化膜の改善方法 |
JP3525149B2 (ja) * | 1996-08-12 | 2004-05-10 | 富士電機デバイステクノロジー株式会社 | 炭化ケイ素半導体装置の製造方法 |
US5990605A (en) * | 1997-03-25 | 1999-11-23 | Pioneer Electronic Corporation | Electron emission device and display device using the same |
JP3491050B2 (ja) * | 1997-05-14 | 2004-01-26 | 富士電機ホールディングス株式会社 | 炭化けい素半導体装置の熱酸化膜形成方法 |
JP3211888B2 (ja) * | 1998-12-07 | 2001-09-25 | 日本電気株式会社 | 半導体集積回路装置の製造方法 |
JP3443589B2 (ja) * | 1999-03-01 | 2003-09-02 | 独立行政法人産業技術総合研究所 | 半導体装置の製造方法 |
JP2000286258A (ja) * | 1999-03-29 | 2000-10-13 | Sanyo Electric Co Ltd | 半導体デバイスの製造方法、mosデバイス、半導体製造装置 |
JP4100652B2 (ja) * | 1999-08-10 | 2008-06-11 | 富士電機デバイステクノロジー株式会社 | SiCショットキーダイオード |
US6617653B1 (en) * | 2000-05-31 | 2003-09-09 | Matsushita Electric Industrial Co., Ltd. | Misfet |
US7067176B2 (en) * | 2000-10-03 | 2006-06-27 | Cree, Inc. | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
JP4525958B2 (ja) * | 2001-08-27 | 2010-08-18 | 独立行政法人産業技術総合研究所 | 半導体装置の製造方法 |
JP4029595B2 (ja) * | 2001-10-15 | 2008-01-09 | 株式会社デンソー | SiC半導体装置の製造方法 |
WO2004003989A1 (ja) * | 2002-06-28 | 2004-01-08 | National Institute Of Advanced Industrial Science And Technology | 半導体装置及びその製造方法 |
US7880173B2 (en) * | 2002-06-28 | 2011-02-01 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device and method of manufacturing same |
US7217954B2 (en) * | 2003-03-18 | 2007-05-15 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide semiconductor device and method for fabricating the same |
JP2004319619A (ja) | 2003-04-14 | 2004-11-11 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005166930A (ja) * | 2003-12-02 | 2005-06-23 | Matsushita Electric Ind Co Ltd | SiC−MISFET及びその製造方法 |
JP4939760B2 (ja) * | 2005-03-01 | 2012-05-30 | 株式会社東芝 | 半導体装置 |
-
2006
- 2006-06-12 JP JP2006162448A patent/JP2007096263A/ja active Pending
- 2006-08-17 SE SE0601692A patent/SE533179C2/sv unknown
- 2006-08-29 US US11/511,236 patent/US7993966B2/en not_active Expired - Fee Related
- 2006-08-30 KR KR1020060083104A patent/KR100795852B1/ko not_active IP Right Cessation
- 2006-08-31 CN CN2006101266667A patent/CN1925169B/zh not_active Expired - Fee Related
- 2006-08-31 DE DE102006040818A patent/DE102006040818A1/de not_active Withdrawn
-
2008
- 2008-07-15 US US12/219,007 patent/US20080283845A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20080283845A1 (en) | 2008-11-20 |
DE102006040818A1 (de) | 2007-04-19 |
US7993966B2 (en) | 2011-08-09 |
KR100795852B1 (ko) | 2008-01-21 |
JP2007096263A (ja) | 2007-04-12 |
KR20070026173A (ko) | 2007-03-08 |
SE533179C2 (sv) | 2010-07-13 |
CN1925169B (zh) | 2010-08-04 |
CN1925169A (zh) | 2007-03-07 |
US20070045631A1 (en) | 2007-03-01 |
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