TW200501420A - Double-gate transistor with enhanced carrier mobility - Google Patents

Double-gate transistor with enhanced carrier mobility

Info

Publication number
TW200501420A
TW200501420A TW092136429A TW92136429A TW200501420A TW 200501420 A TW200501420 A TW 200501420A TW 092136429 A TW092136429 A TW 092136429A TW 92136429 A TW92136429 A TW 92136429A TW 200501420 A TW200501420 A TW 200501420A
Authority
TW
Taiwan
Prior art keywords
double
gate transistor
carrier mobility
enhanced carrier
substrate
Prior art date
Application number
TW092136429A
Other languages
Chinese (zh)
Other versions
TWI249852B (en
Inventor
Boyan Boyanov
Brian Doyle
Jack Kavalieros
Anand Murthy
Robert Chau
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200501420A publication Critical patent/TW200501420A/en
Application granted granted Critical
Publication of TWI249852B publication Critical patent/TWI249852B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Abstract

There is disclosed an apparatus including a straining substrate, a device over the substrate including a channel, wherein the straining substrate strains the device in a direction substantially perpendicular to a direction of current flow in the channel.
TW092136429A 2003-06-16 2003-12-22 Double-gate transistor with enhanced carrier mobility TWI249852B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/463,080 US6974733B2 (en) 2003-06-16 2003-06-16 Double-gate transistor with enhanced carrier mobility

Publications (2)

Publication Number Publication Date
TW200501420A true TW200501420A (en) 2005-01-01
TWI249852B TWI249852B (en) 2006-02-21

Family

ID=33511528

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092136429A TWI249852B (en) 2003-06-16 2003-12-22 Double-gate transistor with enhanced carrier mobility

Country Status (8)

Country Link
US (1) US6974733B2 (en)
EP (2) EP1634336A1 (en)
KR (1) KR100866866B1 (en)
CN (1) CN100356577C (en)
AU (1) AU2003299738A1 (en)
SG (1) SG125962A1 (en)
TW (1) TWI249852B (en)
WO (1) WO2005006447A1 (en)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7190616B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
US20070262377A1 (en) * 2004-11-10 2007-11-15 Gil Asa Transistor Structure and Method of Manufacturing Thereof
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
DE102005051994B4 (en) * 2005-10-31 2011-12-01 Globalfoundries Inc. Deformation technique in silicon-based transistors using embedded semiconductor layers with atoms of large covalent radius
US7525160B2 (en) * 2005-12-27 2009-04-28 Intel Corporation Multigate device with recessed strain regions
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
KR100855977B1 (en) * 2007-02-12 2008-09-02 삼성전자주식회사 Semiconductor device and methods for manufacturing the same
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (en) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure of a multijunction solar cell, method of forming a photonic device, photovoltaic multijunction cell and photovoltaic multijunction cell device,
US20090206405A1 (en) * 2008-02-15 2009-08-20 Doyle Brian S Fin field effect transistor structures having two dielectric thicknesses
US8278687B2 (en) * 2008-03-28 2012-10-02 Intel Corporation Semiconductor heterostructures to reduce short channel effects
US8129749B2 (en) * 2008-03-28 2012-03-06 Intel Corporation Double quantum well structures for transistors
KR101394157B1 (en) 2008-04-08 2014-05-14 삼성전자주식회사 Vertical pillar transistor, DRAM device including the same, method for forming the vertical pillar transistor and method for forming a semiconductor layer
US7800166B2 (en) * 2008-05-30 2010-09-21 Intel Corporation Recessed channel array transistor (RCAT) structures and method of formation
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (en) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 Devices formed from a non-polar plane of a crystalline material and method of making the same
US8440998B2 (en) * 2009-12-21 2013-05-14 Intel Corporation Increasing carrier injection velocity for integrated circuit devices
US8633470B2 (en) * 2009-12-23 2014-01-21 Intel Corporation Techniques and configurations to impart strain to integrated circuit devices
CN103378147B (en) * 2012-04-13 2015-12-16 南亚科技股份有限公司 Two vertical-channel transistors
KR20150020848A (en) 2013-08-19 2015-02-27 에스케이하이닉스 주식회사 PMOS Transistor Improved Current-drivability With Vertical Channel, Variable Resistive Memory Device Including the same And Method of Manufacturing PMOS Transistor
US9466671B2 (en) 2013-08-19 2016-10-11 SK Hynix Inc. Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
US9564373B2 (en) 2015-02-27 2017-02-07 International Business Machines Corporation Forming a CMOS with dual strained channels
US9741853B2 (en) * 2015-10-29 2017-08-22 Globalfoundries Inc. Stress memorization techniques for transistor devices

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385853A (en) * 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
US5534713A (en) * 1994-05-20 1996-07-09 International Business Machines Corporation Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers
US5963800A (en) * 1995-06-16 1999-10-05 Interuniversitair Micro-Elektronica Centrum (Imec Vzw) CMOS integration process having vertical channel
JPH10178172A (en) 1996-12-17 1998-06-30 Toshiba Corp Semiconductor device and its manufacture
US5990509A (en) * 1997-01-22 1999-11-23 International Business Machines Corporation 2F-square memory cell for gigabit memory applications
US5714777A (en) * 1997-02-19 1998-02-03 International Business Machines Corporation Si/SiGe vertical junction field effect transistor
US6071784A (en) * 1997-08-29 2000-06-06 Advanced Micro Devices, Inc. Annealing of silicon oxynitride and silicon nitride films to eliminate high temperature charge loss
KR100292818B1 (en) 1998-07-02 2001-11-05 윤종용 MOS transistor manufacturing method
DE60040812D1 (en) * 1999-03-15 2008-12-24 Matsushita Electric Ind Co Ltd Manufacturing method for a bipolar transistor and a MISFET semiconductor device
US6346732B1 (en) 1999-05-14 2002-02-12 Kabushiki Kaisha Toshiba Semiconductor device with oxide mediated epitaxial layer
US6392271B1 (en) * 1999-06-28 2002-05-21 Intel Corporation Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
US6483171B1 (en) * 1999-08-13 2002-11-19 Micron Technology, Inc. Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
TW451423B (en) 2000-02-01 2001-08-21 Ind Tech Res Inst Latch-up structure for improving CMOS processing using latch-up ion implantation and the manufacturing method thereof
US6319799B1 (en) * 2000-05-09 2001-11-20 Board Of Regents, The University Of Texas System High mobility heterojunction transistor and method
JP2002057329A (en) * 2000-08-09 2002-02-22 Toshiba Corp Vertical field-effect transistor and its manufacturing method
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
KR100385857B1 (en) * 2000-12-27 2003-06-02 한국전자통신연구원 Fabrication Method of SiGe MODFET with a Metal-Oxide Gate
US6475869B1 (en) * 2001-02-26 2002-11-05 Advanced Micro Devices, Inc. Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
US6445016B1 (en) * 2001-02-28 2002-09-03 Advanced Micro Devices, Inc. Silicon-on-insulator (SOI) transistor having partial hetero source/drain junctions fabricated with high energy germanium implantation
US7205604B2 (en) * 2001-03-13 2007-04-17 International Business Machines Corporation Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
US6603156B2 (en) * 2001-03-31 2003-08-05 International Business Machines Corporation Strained silicon on insulator structures
US20020167048A1 (en) * 2001-05-14 2002-11-14 Tweet Douglas J. Enhanced mobility NMOS and PMOS transistors using strained Si/SiGe layers on silicon-on-insulator substrates
US6703271B2 (en) * 2001-11-30 2004-03-09 Taiwan Semiconductor Manufacturing Company Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
US6610576B2 (en) * 2001-12-13 2003-08-26 International Business Machines Corporation Method for forming asymmetric dual gate transistor
US6657252B2 (en) * 2002-03-19 2003-12-02 International Business Machines Corporation FinFET CMOS with NVRAM capability
US6855990B2 (en) * 2002-11-26 2005-02-15 Taiwan Semiconductor Manufacturing Co., Ltd Strained-channel multiple-gate transistor

Also Published As

Publication number Publication date
CN100356577C (en) 2007-12-19
US6974733B2 (en) 2005-12-13
KR20060021386A (en) 2006-03-07
WO2005006447A1 (en) 2005-01-20
TWI249852B (en) 2006-02-21
US20040253774A1 (en) 2004-12-16
KR100866866B1 (en) 2008-11-04
EP2293338A2 (en) 2011-03-09
AU2003299738A1 (en) 2005-01-28
EP1634336A1 (en) 2006-03-15
SG125962A1 (en) 2006-10-30
EP2293338A3 (en) 2011-05-25
CN1574387A (en) 2005-02-02

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