WO2005093841A3 - Trench insulated gate field effect transistor - Google Patents

Trench insulated gate field effect transistor Download PDF

Info

Publication number
WO2005093841A3
WO2005093841A3 PCT/IB2005/051002 IB2005051002W WO2005093841A3 WO 2005093841 A3 WO2005093841 A3 WO 2005093841A3 IB 2005051002 W IB2005051002 W IB 2005051002W WO 2005093841 A3 WO2005093841 A3 WO 2005093841A3
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
effect transistor
trench
insulated gate
gate field
Prior art date
Application number
PCT/IB2005/051002
Other languages
French (fr)
Other versions
WO2005093841A2 (en
Inventor
Raymond J E Hueting
Original Assignee
Koninkl Philips Electronics Nv
Raymond J E Hueting
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Raymond J E Hueting filed Critical Koninkl Philips Electronics Nv
Publication of WO2005093841A2 publication Critical patent/WO2005093841A2/en
Publication of WO2005093841A3 publication Critical patent/WO2005093841A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Abstract

The invention relates to a trench MOSFET with a pair of source regions (12,22) on either side of trench (10). Body regions (14, 24) and drift regions (16,26) are provided under the source regions, connected together by drain region 8 extending under the trench. Field plate (30) is provided to control the drift region. The device can operate in a bidirectional manner controlling current passing in either direction between the source regions (12, 22).
PCT/IB2005/051002 2004-03-27 2005-03-23 Trench insulated gate field effect transistor WO2005093841A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0407012.4 2004-03-27
GB0407012A GB0407012D0 (en) 2004-03-27 2004-03-27 Trench insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
WO2005093841A2 WO2005093841A2 (en) 2005-10-06
WO2005093841A3 true WO2005093841A3 (en) 2006-05-18

Family

ID=32188893

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/051002 WO2005093841A2 (en) 2004-03-27 2005-03-23 Trench insulated gate field effect transistor

Country Status (2)

Country Link
GB (1) GB0407012D0 (en)
WO (1) WO2005093841A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009531850A (en) * 2006-03-28 2009-09-03 エヌエックスピー ビー ヴィ Trench gate semiconductor device and manufacturing method thereof
JP2013062344A (en) * 2011-09-13 2013-04-04 Toshiba Corp Semiconductor device and manufacturing method of the same
CN102437191B (en) * 2011-12-06 2014-01-15 苏州硅能半导体科技股份有限公司 Low grid-drain capacitance grooved metal oxide silicon (MOS) device and manufacturing method thereof
CN103426925B (en) * 2012-05-14 2016-06-08 上海华虹宏力半导体制造有限公司 Low-grid electric charge groove power MOS device and manufacture method
US9224854B2 (en) 2013-10-03 2015-12-29 Texas Instruments Incorporated Trench gate trench field plate vertical MOSFET
US9123802B2 (en) * 2013-10-03 2015-09-01 Texas Instruments Incorporated Vertical trench MOSFET device in integrated power technologies
US9136368B2 (en) * 2013-10-03 2015-09-15 Texas Instruments Incorporated Trench gate trench field plate semi-vertical semi-lateral MOSFET
EP3951887A1 (en) * 2015-09-11 2022-02-09 Nexperia B.V. A semiconductor device and a method of making a semiconductor device
US10424646B2 (en) 2017-09-26 2019-09-24 Nxp Usa, Inc. Field-effect transistor and method therefor
US10522677B2 (en) * 2017-09-26 2019-12-31 Nxp Usa, Inc. Field-effect transistor and method therefor
US10600911B2 (en) 2017-09-26 2020-03-24 Nxp Usa, Inc. Field-effect transistor and method therefor
US10600879B2 (en) 2018-03-12 2020-03-24 Nxp Usa, Inc. Transistor trench structure with field plate structures
US10833174B2 (en) 2018-10-26 2020-11-10 Nxp Usa, Inc. Transistor devices with extended drain regions located in trench sidewalls
US10749023B2 (en) 2018-10-30 2020-08-18 Nxp Usa, Inc. Vertical transistor with extended drain region
US10749028B2 (en) 2018-11-30 2020-08-18 Nxp Usa, Inc. Transistor with gate/field plate structure
US11387348B2 (en) 2019-11-22 2022-07-12 Nxp Usa, Inc. Transistor formed with spacer
US11329156B2 (en) 2019-12-16 2022-05-10 Nxp Usa, Inc. Transistor with extended drain region
US11075110B1 (en) 2020-03-31 2021-07-27 Nxp Usa, Inc. Transistor trench with field plate structure
US11217675B2 (en) 2020-03-31 2022-01-04 Nxp Usa, Inc. Trench with different transverse cross-sectional widths

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290077A (en) * 1979-05-30 1981-09-15 Xerox Corporation High voltage MOSFET with inter-device isolation structure
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
US5142640A (en) * 1988-06-02 1992-08-25 Seiko Epson Corporation Trench gate metal oxide semiconductor field effect transistor
US5434435A (en) * 1994-05-04 1995-07-18 North Carolina State University Trench gate lateral MOSFET

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290077A (en) * 1979-05-30 1981-09-15 Xerox Corporation High voltage MOSFET with inter-device isolation structure
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
US5142640A (en) * 1988-06-02 1992-08-25 Seiko Epson Corporation Trench gate metal oxide semiconductor field effect transistor
US5434435A (en) * 1994-05-04 1995-07-18 North Carolina State University Trench gate lateral MOSFET

Also Published As

Publication number Publication date
GB0407012D0 (en) 2004-04-28
WO2005093841A2 (en) 2005-10-06

Similar Documents

Publication Publication Date Title
WO2005093841A3 (en) Trench insulated gate field effect transistor
WO2005053032A3 (en) Trench insulated gate field effect transistor
WO2005057615A3 (en) Closed cell trench metal-oxide-semiconductor field effect transistor
TW200501420A (en) Double-gate transistor with enhanced carrier mobility
WO2010030493A3 (en) Transistor with a passive gate and methods of fabricating the same
WO2008002879A3 (en) Lateral trench gate fet with direct source-drain current path
ATE515802T1 (en) LATERAL POWER MOSFET
WO2003017349A3 (en) Dmos transistor
EP1542270A4 (en) Vertical junction field effect transistor and method for fabricating the same
WO2002069408A3 (en) Soi ldmos transistor having a field plate and method of making the same
WO2007118060A3 (en) Self-aligned complementary ldmos
TW200607090A (en) Novel isolated LDMOS IC technology
WO2008027722A3 (en) Power trench mosfets having sige/si channel structure
WO2005053031A3 (en) Trench insulated gate field effect transistor
SG142307A1 (en) Strained channel field effect transistor using sacrificial spacer
WO2009036266A3 (en) Iii-nitride bidirectional switches
WO2006008703A3 (en) Nanoscale fet
AU2002329862A1 (en) Trench dmos transistor with embedded trench schottky rectifier
WO2006042040A3 (en) Bandgap engineered mos-gated power transistors
WO2007082266A3 (en) Semiconductor transistors with expanded top portions of gates
WO2007076063A3 (en) High mobility power metal-oxide semiconductor field-effect transistors
WO2006004746A3 (en) Mosgated power semiconductor device with source field electrode
WO2007129261A3 (en) Trench field effect transistors
WO2009140224A3 (en) Power field effect transistor
WO2012068127A3 (en) Transistor driven 3d memory

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase