WO2006004746A3 - Mosgated power semiconductor device with source field electrode - Google Patents

Mosgated power semiconductor device with source field electrode Download PDF

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Publication number
WO2006004746A3
WO2006004746A3 PCT/US2005/022917 US2005022917W WO2006004746A3 WO 2006004746 A3 WO2006004746 A3 WO 2006004746A3 US 2005022917 W US2005022917 W US 2005022917W WO 2006004746 A3 WO2006004746 A3 WO 2006004746A3
Authority
WO
WIPO (PCT)
Prior art keywords
source field
field electrode
semiconductor device
power semiconductor
mosgated power
Prior art date
Application number
PCT/US2005/022917
Other languages
French (fr)
Other versions
WO2006004746A2 (en
Inventor
Jianjun Cao
Dave Kent
Paul Harvey
Ritu Sodhi
Daniel M Kinzer
Naresh Thapar
Andrew N Sawle
Original Assignee
Int Rectifier Corp
Jianjun Cao
Dave Kent
Paul Harvey
Ritu Sodhi
Daniel M Kinzer
Naresh Thapar
Andrew N Sawle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp, Jianjun Cao, Dave Kent, Paul Harvey, Ritu Sodhi, Daniel M Kinzer, Naresh Thapar, Andrew N Sawle filed Critical Int Rectifier Corp
Priority to JP2007518368A priority Critical patent/JP2008504697A/en
Priority to DE112005001434.7T priority patent/DE112005001434B4/en
Publication of WO2006004746A2 publication Critical patent/WO2006004746A2/en
Publication of WO2006004746A3 publication Critical patent/WO2006004746A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A power semiconductor device which includes a source field electrode (30), and at least one insulated gate electrode (24, 26) adjacent a respective side of the source field electrode (30), the source field electrode (30) and the gate electrode being disposed in a common trench (10), and a method for fabricating the device.
PCT/US2005/022917 2004-06-25 2005-06-27 Mosgated power semiconductor device with source field electrode WO2006004746A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007518368A JP2008504697A (en) 2004-06-25 2005-06-27 Power semiconductor device provided with a MOS gate having a source field electrode
DE112005001434.7T DE112005001434B4 (en) 2004-06-25 2005-06-27 MOS gate-connected power semiconductor device with source field electrode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58289804P 2004-06-25 2004-06-25
US60/582,898 2004-06-25

Publications (2)

Publication Number Publication Date
WO2006004746A2 WO2006004746A2 (en) 2006-01-12
WO2006004746A3 true WO2006004746A3 (en) 2006-02-16

Family

ID=35783318

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/022917 WO2006004746A2 (en) 2004-06-25 2005-06-27 Mosgated power semiconductor device with source field electrode

Country Status (3)

Country Link
JP (1) JP2008504697A (en)
DE (1) DE112005001434B4 (en)
WO (1) WO2006004746A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006007096B4 (en) * 2006-02-15 2008-07-17 Infineon Technologies Austria Ag Compensating structure and edge termination MOSFET and method of making the same
US7381618B2 (en) * 2006-10-03 2008-06-03 Power Integrations, Inc. Gate etch process for a high-voltage FET
US20090096027A1 (en) * 2007-10-10 2009-04-16 Franz Hirler Power Semiconductor Device
DE102009014418B3 (en) * 2009-03-26 2010-04-15 Heraeus Quarzglas Gmbh & Co. Kg Drawing method for the production of cylindrical components made of quartz glass
JP5627494B2 (en) * 2011-02-09 2014-11-19 株式会社東芝 Semiconductor device and manufacturing method thereof
JP2012204529A (en) * 2011-03-24 2012-10-22 Toshiba Corp Semiconductor device and method of manufacturing the same
JP2012204590A (en) * 2011-03-25 2012-10-22 Toshiba Corp Semiconductor device and method of manufacturing the same
JP5833274B1 (en) * 2014-09-24 2015-12-16 新電元工業株式会社 Silicon carbide semiconductor device, method for manufacturing silicon carbide semiconductor device, and method for designing silicon carbide semiconductor device
JP6426642B2 (en) * 2016-03-08 2018-11-21 株式会社東芝 Semiconductor device
IT201700057056A1 (en) 2017-05-25 2018-11-25 St Microelectronics Srl SELF-ALIGNED MANUFACTURING METHOD OF A VDMOS TRANSISTOR, AND AUTO-LINKED VDMOS TRANSISTOR
CN107910268B (en) * 2017-11-17 2023-12-26 杭州士兰集昕微电子有限公司 Power semiconductor device and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132460A1 (en) * 2001-12-18 2003-07-17 Fuji Electric Co., Ltd. Semiconductor device and semiconductor device manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326711A (en) * 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
DE10038177A1 (en) * 2000-08-04 2002-02-21 Infineon Technologies Ag Semiconductor switching element with two control electrodes which can be controlled by means of a field effect
US6586833B2 (en) 2000-11-16 2003-07-01 Silicon Semiconductor Corporation Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines
JP3709814B2 (en) * 2001-01-24 2005-10-26 株式会社豊田中央研究所 Semiconductor device and manufacturing method thereof
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132460A1 (en) * 2001-12-18 2003-07-17 Fuji Electric Co., Ltd. Semiconductor device and semiconductor device manufacturing method

Also Published As

Publication number Publication date
JP2008504697A (en) 2008-02-14
DE112005001434B4 (en) 2018-06-07
DE112005001434T5 (en) 2007-05-16
WO2006004746A2 (en) 2006-01-12

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