RU2604568C2 - Оптическая подложка, полупроводниковый светоизлучающий элемент и способ изготовления полупроводникового светоизлучающего элемента - Google Patents

Оптическая подложка, полупроводниковый светоизлучающий элемент и способ изготовления полупроводникового светоизлучающего элемента Download PDF

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RU2604568C2
RU2604568C2 RU2014144362/28A RU2014144362A RU2604568C2 RU 2604568 C2 RU2604568 C2 RU 2604568C2 RU 2014144362/28 A RU2014144362/28 A RU 2014144362/28A RU 2014144362 A RU2014144362 A RU 2014144362A RU 2604568 C2 RU2604568 C2 RU 2604568C2
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Дзун КОИКЕ
Йосимити МИТАМУРА
Фудзито ЯМАГУТИ
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Асахи Касеи И-Матириалс Корпорейшн
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
RU2014144362/28A 2012-04-02 2013-03-29 Оптическая подложка, полупроводниковый светоизлучающий элемент и способ изготовления полупроводникового светоизлучающего элемента RU2604568C2 (ru)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
JP2012084208 2012-04-02
JP2012-084208 2012-04-02
JP2012103490 2012-04-27
JP2012-103489 2012-04-27
JP2012103489 2012-04-27
JP2012-103490 2012-04-27
JP2012-227295 2012-10-12
JP2012227295 2012-10-12
JP2012267488 2012-12-06
JP2012267377 2012-12-06
JP2012-267377 2012-12-06
JP2012-267488 2012-12-06
JP2012280241 2012-12-21
JP2012-280241 2012-12-21
PCT/JP2013/059635 WO2013150984A1 (ja) 2012-04-02 2013-03-29 光学基板、半導体発光素子及び半導体発光素子の製造方法

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RU2014144362A RU2014144362A (ru) 2016-05-27
RU2604568C2 true RU2604568C2 (ru) 2016-12-10

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US (1) US9614136B2 (OSRAM)
EP (5) EP2942822A1 (OSRAM)
JP (1) JP6235459B2 (OSRAM)
KR (2) KR101763460B1 (OSRAM)
CN (1) CN104205370B (OSRAM)
BR (1) BR112014024516A2 (OSRAM)
IN (1) IN2014MN01916A (OSRAM)
RU (1) RU2604568C2 (OSRAM)
TW (1) TWI531086B (OSRAM)
WO (1) WO2013150984A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU202751U1 (ru) * 2020-08-11 2021-03-04 Постовой Денис Александрович Диодная сборка
RU2804791C1 (ru) * 2023-05-26 2023-10-05 федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технический университет имени Н.Э. Баумана (национальный исследовательский университет)" (МГТУ им. Н.Э. Баумана) Способ изготовления глубокопрофильных многоуровневых микроструктур в кварцевом стекле

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5689533B2 (ja) * 2011-08-31 2015-03-25 旭化成イーマテリアルズ株式会社 光学用基材、半導体発光素子、インプリント用モールドおよび露光方法
JP6235459B2 (ja) * 2012-04-02 2017-11-22 旭化成株式会社 光学基板、半導体発光素子及び半導体発光素子の製造方法
KR101421026B1 (ko) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출층 기판 및 그 제조방법
EP2922103B1 (en) 2012-08-21 2017-04-05 Oji Holdings Corporation Substrate for semiconductor light emitting elements and semiconductor light emitting element
DE102013108876B4 (de) * 2013-08-16 2022-08-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Fotolithografisches Verfahren zur Herstellung einer Struktur in einem Strahlung emittierenden Halbleiterbauelement
CN104459852B (zh) * 2013-09-22 2017-02-01 清华大学 金属光栅的制备方法
CN104459855A (zh) * 2013-09-22 2015-03-25 清华大学 金属光栅的制备方法
CN104459854B (zh) * 2013-09-22 2017-12-01 清华大学 金属光栅的制备方法
TWI632696B (zh) * 2013-10-11 2018-08-11 王子控股股份有限公司 半導體發光元件用基板之製造方法、半導體發光元件之製 造方法、半導體發光元件用基板、以及半導體發光元件
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
JP2015120879A (ja) * 2013-11-20 2015-07-02 旭化成イーマテリアルズ株式会社 レジスト組成物
KR102099441B1 (ko) * 2013-12-19 2020-04-09 엘지이노텍 주식회사 발광소자
KR101894342B1 (ko) * 2013-12-27 2018-09-03 제이엑스티지 에네루기 가부시키가이샤 발광 소자
JP6295276B2 (ja) * 2014-01-10 2018-03-14 Ｊｘｔｇエネルギー株式会社 光学基板、光学基板の製造に用いられるモールド、及び光学基板を含む発光素子
US9618836B2 (en) * 2014-04-22 2017-04-11 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production
JP6438678B2 (ja) * 2014-05-14 2018-12-19 Ｊｘｔｇエネルギー株式会社 凹凸構造を有するフィルム部材
KR20170030473A (ko) * 2014-07-10 2017-03-17 에스씨아이브이에이엑스 가부시키가이샤 광학 부재 및 그 제조 방법
TWI556002B (zh) * 2014-08-05 2016-11-01 群創光電股份有限公司 抗反射結構及電子裝置
CN105449058A (zh) * 2014-09-02 2016-03-30 展晶科技(深圳)有限公司 磊晶基板、磊晶基板的制造方法及发光二极管
TWI605616B (zh) * 2015-08-12 2017-11-11 固美實國際股份有限公司 用於發光二極體的圖案化基板
KR102412409B1 (ko) * 2015-10-26 2022-06-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
JP6229707B2 (ja) 2015-11-26 2017-11-15 日亜化学工業株式会社 発光素子及びその製造方法
US10340415B2 (en) * 2016-09-01 2019-07-02 Lg Innotek Co., Ltd. Semiconductor device and semiconductor device package including the same
TWI635639B (zh) * 2017-01-05 2018-09-11 機光科技股份有限公司 高折射高導熱ｏｌｅｄ元件
US10243099B2 (en) 2017-05-16 2019-03-26 Epistar Corporation Light-emitting device
KR102343099B1 (ko) * 2017-06-07 2021-12-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN109427940B (zh) * 2017-08-22 2020-04-24 比亚迪股份有限公司 发光二极管外延片及其制造方法
DE102018116783B4 (de) 2017-09-29 2024-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitersubstrat und Verfahren zum Fertigen von diesem
KR102456458B1 (ko) * 2017-12-27 2022-10-18 엘지디스플레이 주식회사 전계 발광 표시장치
US11181668B2 (en) * 2018-07-13 2021-11-23 University Of Notre Dame Du Lac High contrast gradient index lens antennas
WO2020157741A1 (en) * 2019-01-28 2020-08-06 B.G. Negev Technologies & Applications Ltd., At Ben-Gurion University Structure for a waveguide facet
US11249206B2 (en) * 2020-01-06 2022-02-15 Canon Medical Systems Corporation Method and system for PET detector efficiency normalization
CN113436983B (zh) * 2020-03-19 2024-08-13 京东方科技集团股份有限公司 μLED基板及制备方法、EL检测方法及装置
CN111785836B (zh) * 2020-06-27 2022-12-16 上海师范大学 一种具有蛾眼结构空穴传输层的太阳能电池及其制备方法
FR3115930B1 (fr) * 2020-10-29 2024-03-22 Commissariat Energie Atomique Diode électroluminescente à structure de contact tridimensionnelle, écran d’affichage et procédé de fabrication associé
DE102020215937A1 (de) * 2020-12-15 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines substrats mit einer strukturierten oberfläche und substrat mit einer strukturierten oberfläche
TWI854755B (zh) * 2022-12-01 2024-09-01 台灣光罩股份有限公司 用以測試半導體元件之測試系統
CN116500403B (zh) * 2023-04-04 2025-09-12 南昌大学 一种测量led芯片光提取效率及内量子效率的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6844569B1 (en) * 2003-12-20 2005-01-18 Samsung Electro-Mechanics Co., Ltd. Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby
JP2007088277A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
EP2226855A1 (en) * 2009-03-03 2010-09-08 LG Innotek Co., Ltd. Light emitting device

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
JP4178836B2 (ja) 2002-05-29 2008-11-12 ソニー株式会社 窒化ガリウム系半導体素子及びその製造方法
KR100646297B1 (ko) * 2004-03-05 2006-11-23 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치의 제조 방법
JP2005259970A (ja) 2004-03-11 2005-09-22 Nichia Chem Ind Ltd 半導体発光素子
JP2005354020A (ja) * 2004-05-10 2005-12-22 Univ Meijo 半導体発光素子製造方法および半導体発光素子
KR20070046024A (ko) 2004-08-31 2007-05-02 각코우호우징 메이조다이가쿠 반도체 발광 소자 제조 방법 및 반도체 발광 소자
KR100610639B1 (ko) * 2005-07-22 2006-08-09 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
KR100659373B1 (ko) * 2006-02-09 2006-12-19 서울옵토디바이스주식회사 패터닝된 발광다이오드용 기판 및 그것을 채택하는 발광다이오드
JP5232969B2 (ja) * 2006-03-23 2013-07-10 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
KR100828873B1 (ko) 2006-04-25 2008-05-09 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR100780233B1 (ko) * 2006-05-15 2007-11-27 삼성전기주식회사 다중 패턴 구조를 지닌 반도체 발광 소자
KR100769727B1 (ko) 2006-08-17 2007-10-23 삼성전기주식회사 표면 요철 형성방법 및 그를 이용한 질화갈륨계발광다이오드 소자의 제조방법
US7977695B2 (en) * 2007-09-21 2011-07-12 Lg Innotek Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
JP4993371B2 (ja) * 2007-11-21 2012-08-08 サンケン電気株式会社 半導体発光素子用ウエーハの粗面化方法及び半導体発光素子
US7598105B2 (en) 2007-12-21 2009-10-06 Tekcore Co., Ltd. Light emitting diode structure and method for fabricating the same
TW200945631A (en) * 2007-12-28 2009-11-01 Nichia Corp Semiconductor light emitting element and method for manufacturing the same
JP5042100B2 (ja) * 2008-03-28 2012-10-03 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長用基板およびその製造方法ならびにｉｉｉ族窒化物半導体素子
JP5282503B2 (ja) 2008-09-19 2013-09-04 日亜化学工業株式会社 半導体発光素子
JP5343225B2 (ja) * 2008-12-16 2013-11-13 スタンレー電気株式会社 Ｉｉ−ｖｉ族またはｉｉｉ−ｖ族化合物系半導体発光素子用エピタキシャルウエハ、および、その製造方法
JP5174052B2 (ja) 2009-01-21 2013-04-03 ナショナル チョン シン ユニバーシティ 低欠陥密度を有するエピタキシャル構造の製造方法
TW201029073A (en) 2009-01-21 2010-08-01 Univ Nat Chunghsing Epitaxial wafer with low surface defect density
WO2010101348A1 (ko) 2009-03-05 2010-09-10 우리엘에스티 주식회사 3족 질화물 반도체 발광소자 및 그 제조방법
JP5196403B2 (ja) * 2009-03-23 2013-05-15 国立大学法人山口大学 サファイア基板の製造方法、および半導体装置
CN104600167B (zh) * 2009-09-07 2017-12-12 崇高种子公司 半导体发光元件
JP2012033521A (ja) * 2010-07-28 2012-02-16 Hitachi Cable Ltd 基板、及び発光素子
JP5319641B2 (ja) 2010-10-14 2013-10-16 株式会社東芝 診断回路および半導体集積回路
JP2012103489A (ja) 2010-11-10 2012-05-31 Dainippon Printing Co Ltd 保護フィルム、偏光板、液晶表示パネルおよび表示装置
JP2012103490A (ja) 2010-11-10 2012-05-31 Seiko Epson Corp 偏光素子とその製造方法、プロジェクター、液晶装置、電子機器
JP2012124257A (ja) 2010-12-07 2012-06-28 Toshiba Corp 半導体発光素子及びその製造方法
JP5730653B2 (ja) 2011-04-18 2015-06-10 株式会社ソニー・コンピュータエンタテインメント 電子機器
WO2013125823A1 (en) * 2012-02-20 2013-08-29 Seoul Opto Device Co., Ltd. High efficiency light emitting diode and method of fabricating the same
JP6235459B2 (ja) * 2012-04-02 2017-11-22 旭化成株式会社 光学基板、半導体発光素子及び半導体発光素子の製造方法
US9419249B2 (en) * 2012-04-13 2016-08-16 Asahi Kasei E-Materials Corporation Light extraction product for semiconductor light emitting device and light emitting device
EP3010048B1 (en) * 2013-06-10 2017-08-09 Asahi Kasei Kabushiki Kaisha Semiconductor light-emitting device
EP3026716B1 (en) * 2013-07-30 2020-12-16 National Institute of Information and Communications Technology Semiconductor light emitting element and method for manufacturing same
TWI632696B (zh) * 2013-10-11 2018-08-11 王子控股股份有限公司 半導體發光元件用基板之製造方法、半導體發光元件之製 造方法、半導體發光元件用基板、以及半導體發光元件
DE102014108301A1 (de) * 2014-06-12 2015-12-17 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6844569B1 (en) * 2003-12-20 2005-01-18 Samsung Electro-Mechanics Co., Ltd. Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby
JP2007088277A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
EP2226855A1 (en) * 2009-03-03 2010-09-08 LG Innotek Co., Ltd. Light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU202751U1 (ru) * 2020-08-11 2021-03-04 Постовой Денис Александрович Диодная сборка
RU2804791C1 (ru) * 2023-05-26 2023-10-05 федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технический университет имени Н.Э. Баумана (национальный исследовательский университет)" (МГТУ им. Н.Э. Баумана) Способ изготовления глубокопрофильных многоуровневых микроструктур в кварцевом стекле

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WO2013150984A1 (ja) 2013-10-10
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EP2942822A1 (en) 2015-11-11
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EP2942821A1 (en) 2015-11-11
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