IN2014MN01916A - - Google Patents
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- Publication number
- IN2014MN01916A IN2014MN01916A IN1916MUN2014A IN2014MN01916A IN 2014MN01916 A IN2014MN01916 A IN 2014MN01916A IN 1916MUN2014 A IN1916MUN2014 A IN 1916MUN2014A IN 2014MN01916 A IN2014MN01916 A IN 2014MN01916A
- Authority
- IN
- India
- Prior art keywords
- convex
- parts
- convex parts
- pave
- emitting element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000149 argon plasma sintering Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012084208 | 2012-04-02 | ||
| JP2012103489 | 2012-04-27 | ||
| JP2012103490 | 2012-04-27 | ||
| JP2012227295 | 2012-10-12 | ||
| JP2012267488 | 2012-12-06 | ||
| JP2012267377 | 2012-12-06 | ||
| JP2012280241 | 2012-12-21 | ||
| PCT/JP2013/059635 WO2013150984A1 (ja) | 2012-04-02 | 2013-03-29 | 光学基板、半導体発光素子及び半導体発光素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014MN01916A true IN2014MN01916A (OSRAM) | 2015-07-10 |
Family
ID=49300468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1916MUN2014 IN2014MN01916A (OSRAM) | 2012-04-02 | 2013-03-29 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9614136B2 (OSRAM) |
| EP (5) | EP2942822A1 (OSRAM) |
| JP (1) | JP6235459B2 (OSRAM) |
| KR (2) | KR101763460B1 (OSRAM) |
| CN (1) | CN104205370B (OSRAM) |
| BR (1) | BR112014024516A2 (OSRAM) |
| IN (1) | IN2014MN01916A (OSRAM) |
| RU (1) | RU2604568C2 (OSRAM) |
| TW (1) | TWI531086B (OSRAM) |
| WO (1) | WO2013150984A1 (OSRAM) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2863260A1 (en) | 2011-08-31 | 2015-04-22 | Asahi Kasei E-materials Corporation | Nano-imprint mold |
| EP2942822A1 (en) * | 2012-04-02 | 2015-11-11 | Asahi Kasei E-materials Corporation | Optical substrate, semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
| KR101421026B1 (ko) * | 2012-06-12 | 2014-07-22 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출층 기판 및 그 제조방법 |
| JP6036830B2 (ja) * | 2012-08-21 | 2016-11-30 | 王子ホールディングス株式会社 | 半導体発光素子用基板及び半導体発光素子、並びにこれらの製造方法 |
| DE102013108876B4 (de) * | 2013-08-16 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Fotolithografisches Verfahren zur Herstellung einer Struktur in einem Strahlung emittierenden Halbleiterbauelement |
| CN104459855A (zh) * | 2013-09-22 | 2015-03-25 | 清华大学 | 金属光栅的制备方法 |
| CN104459854B (zh) * | 2013-09-22 | 2017-12-01 | 清华大学 | 金属光栅的制备方法 |
| CN104459852B (zh) * | 2013-09-22 | 2017-02-01 | 清华大学 | 金属光栅的制备方法 |
| TWI632696B (zh) | 2013-10-11 | 2018-08-11 | 王子控股股份有限公司 | 半導體發光元件用基板之製造方法、半導體發光元件之製 造方法、半導體發光元件用基板、以及半導體發光元件 |
| TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| JP2015120879A (ja) * | 2013-11-20 | 2015-07-02 | 旭化成イーマテリアルズ株式会社 | レジスト組成物 |
| KR102099441B1 (ko) * | 2013-12-19 | 2020-04-09 | 엘지이노텍 주식회사 | 발광소자 |
| JP6612130B2 (ja) * | 2013-12-27 | 2019-11-27 | Ｊｘｔｇエネルギー株式会社 | 発光素子 |
| WO2015104968A1 (ja) * | 2014-01-10 | 2015-07-16 | Ｊｘ日鉱日石エネルギー株式会社 | 光学基板、光学基板の製造に用いられるモールド、及び光学基板を含む発光素子 |
| US9618836B2 (en) * | 2014-04-22 | 2017-04-11 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production |
| JP6438678B2 (ja) * | 2014-05-14 | 2018-12-19 | Ｊｘｔｇエネルギー株式会社 | 凹凸構造を有するフィルム部材 |
| CN106662673B (zh) * | 2014-07-10 | 2018-11-30 | Scivax股份有限公司 | 光学部件及其制造方法 |
| TWI556002B (zh) * | 2014-08-05 | 2016-11-01 | 群創光電股份有限公司 | 抗反射結構及電子裝置 |
| CN105449058A (zh) * | 2014-09-02 | 2016-03-30 | 展晶科技(深圳)有限公司 | 磊晶基板、磊晶基板的制造方法及发光二极管 |
| TWI605616B (zh) * | 2015-08-12 | 2017-11-11 | 固美實國際股份有限公司 | 用於發光二極體的圖案化基板 |
| KR102412409B1 (ko) * | 2015-10-26 | 2022-06-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
| JP6229707B2 (ja) | 2015-11-26 | 2017-11-15 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
| US10340415B2 (en) * | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
| TWI635639B (zh) * | 2017-01-05 | 2018-09-11 | 機光科技股份有限公司 | 高折射高導熱ｏｌｅｄ元件 |
| US10243099B2 (en) | 2017-05-16 | 2019-03-26 | Epistar Corporation | Light-emitting device |
| KR102343099B1 (ko) * | 2017-06-07 | 2021-12-24 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| CN109427940B (zh) * | 2017-08-22 | 2020-04-24 | 比亚迪股份有限公司 | 发光二极管外延片及其制造方法 |
| DE102018116783B4 (de) | 2017-09-29 | 2024-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitersubstrat und Verfahren zum Fertigen von diesem |
| KR102456458B1 (ko) | 2017-12-27 | 2022-10-18 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
| US11181668B2 (en) * | 2018-07-13 | 2021-11-23 | University Of Notre Dame Du Lac | High contrast gradient index lens antennas |
| EP3918390A4 (en) * | 2019-01-28 | 2022-10-05 | B.G. Negev Technologies and Applications Ltd., at Ben-Gurion University | Structure for a waveguide facet |
| US11249206B2 (en) * | 2020-01-06 | 2022-02-15 | Canon Medical Systems Corporation | Method and system for PET detector efficiency normalization |
| CN113436983B (zh) * | 2020-03-19 | 2024-08-13 | 京东方科技集团股份有限公司 | μLED基板及制备方法、EL检测方法及装置 |
| CN111785836B (zh) * | 2020-06-27 | 2022-12-16 | 上海师范大学 | 一种具有蛾眼结构空穴传输层的太阳能电池及其制备方法 |
| RU202751U1 (ru) * | 2020-08-11 | 2021-03-04 | Постовой Денис Александрович | Диодная сборка |
| FR3115930B1 (fr) * | 2020-10-29 | 2024-03-22 | Commissariat Energie Atomique | Diode électroluminescente à structure de contact tridimensionnelle, écran d’affichage et procédé de fabrication associé |
| DE102020215937A1 (de) * | 2020-12-15 | 2022-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines substrats mit einer strukturierten oberfläche und substrat mit einer strukturierten oberfläche |
| TWI854755B (zh) * | 2022-12-01 | 2024-09-01 | 台灣光罩股份有限公司 | 用以測試半導體元件之測試系統 |
| CN116500403B (zh) * | 2023-04-04 | 2025-09-12 | 南昌大学 | 一种测量led芯片光提取效率及内量子效率的方法 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP4178836B2 (ja) | 2002-05-29 | 2008-11-12 | ソニー株式会社 | 窒化ガリウム系半導体素子及びその製造方法 |
| KR100576854B1 (ko) * | 2003-12-20 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 제조 방법과 이를 이용한 질화물 반도체 |
| KR100646297B1 (ko) * | 2004-03-05 | 2006-11-23 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | 표시 장치의 제조 방법 |
| JP2005259970A (ja) | 2004-03-11 | 2005-09-22 | Nichia Chem Ind Ltd | 半導体発光素子 |
| JP2005354020A (ja) * | 2004-05-10 | 2005-12-22 | Univ Meijo | 半導体発光素子製造方法および半導体発光素子 |
| KR20070046024A (ko) * | 2004-08-31 | 2007-05-02 | 각코우호우징 메이조다이가쿠 | 반도체 발광 소자 제조 방법 및 반도체 발광 소자 |
| KR100610639B1 (ko) | 2005-07-22 | 2006-08-09 | 삼성전기주식회사 | 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 |
| JP4843284B2 (ja) * | 2005-09-22 | 2011-12-21 | パナソニック電工株式会社 | 半導体発光素子およびその製造方法 |
| KR100659373B1 (ko) * | 2006-02-09 | 2006-12-19 | 서울옵토디바이스주식회사 | 패터닝된 발광다이오드용 기판 및 그것을 채택하는 발광다이오드 |
| JP5232969B2 (ja) * | 2006-03-23 | 2013-07-10 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法 |
| KR100828873B1 (ko) | 2006-04-25 | 2008-05-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| KR100780233B1 (ko) * | 2006-05-15 | 2007-11-27 | 삼성전기주식회사 | 다중 패턴 구조를 지닌 반도체 발광 소자 |
| KR100769727B1 (ko) | 2006-08-17 | 2007-10-23 | 삼성전기주식회사 | 표면 요철 형성방법 및 그를 이용한 질화갈륨계발광다이오드 소자의 제조방법 |
| US7977695B2 (en) * | 2007-09-21 | 2011-07-12 | Lg Innotek Co., Ltd. | Semiconductor light emitting device and method for manufacturing the same |
| JP4993371B2 (ja) * | 2007-11-21 | 2012-08-08 | サンケン電気株式会社 | 半導体発光素子用ウエーハの粗面化方法及び半導体発光素子 |
| US7598105B2 (en) * | 2007-12-21 | 2009-10-06 | Tekcore Co., Ltd. | Light emitting diode structure and method for fabricating the same |
| KR101164663B1 (ko) * | 2007-12-28 | 2012-07-12 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 발광 소자 및 그 제조방법 |
| JP5042100B2 (ja) | 2008-03-28 | 2012-10-03 | Ｄｏｗａエレクトロニクス株式会社 | エピタキシャル成長用基板およびその製造方法ならびにｉｉｉ族窒化物半導体素子 |
| JP5282503B2 (ja) | 2008-09-19 | 2013-09-04 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP5343225B2 (ja) * | 2008-12-16 | 2013-11-13 | スタンレー電気株式会社 | Ｉｉ−ｖｉ族またはｉｉｉ−ｖ族化合物系半導体発光素子用エピタキシャルウエハ、および、その製造方法 |
| TW201029073A (en) | 2009-01-21 | 2010-08-01 | Univ Nat Chunghsing | Epitaxial wafer with low surface defect density |
| KR101148380B1 (ko) | 2009-01-21 | 2012-05-24 | 내셔날 충싱 유니버시티 | 저결함 밀도를 가지는 에피택셜 구조 및 그 제조 방법 |
| KR101134810B1 (ko) | 2009-03-03 | 2012-04-13 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| WO2010101348A1 (ko) | 2009-03-05 | 2010-09-10 | 우리엘에스티 주식회사 | 3족 질화물 반도체 발광소자 및 그 제조방법 |
| JP5196403B2 (ja) * | 2009-03-23 | 2013-05-15 | 国立大学法人山口大学 | サファイア基板の製造方法、および半導体装置 |
| US8941136B2 (en) * | 2009-09-07 | 2015-01-27 | El-Seed Corporation | Semiconductor light emitting element |
| JP2012033521A (ja) | 2010-07-28 | 2012-02-16 | Hitachi Cable Ltd | 基板、及び発光素子 |
| JP5319641B2 (ja) | 2010-10-14 | 2013-10-16 | 株式会社東芝 | 診断回路および半導体集積回路 |
| JP2012103490A (ja) | 2010-11-10 | 2012-05-31 | Seiko Epson Corp | 偏光素子とその製造方法、プロジェクター、液晶装置、電子機器 |
| JP2012103489A (ja) | 2010-11-10 | 2012-05-31 | Dainippon Printing Co Ltd | 保護フィルム、偏光板、液晶表示パネルおよび表示装置 |
| JP2012124257A (ja) | 2010-12-07 | 2012-06-28 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP5730653B2 (ja) | 2011-04-18 | 2015-06-10 | 株式会社ソニー・コンピュータエンタテインメント | 電子機器 |
| WO2013125823A1 (en) * | 2012-02-20 | 2013-08-29 | Seoul Opto Device Co., Ltd. | High efficiency light emitting diode and method of fabricating the same |
| EP2942822A1 (en) * | 2012-04-02 | 2015-11-11 | Asahi Kasei E-materials Corporation | Optical substrate, semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
| EP2838130A4 (en) * | 2012-04-13 | 2015-08-12 | Asahi Kasei E Materials Corp | LIGHT EXTRACTION BODY FOR A LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND LIGHT-EMITTING ELEMENT |
| WO2014199851A1 (ja) * | 2013-06-10 | 2014-12-18 | 旭化成イーマテリアルズ株式会社 | 半導体発光装置 |
| KR102208684B1 (ko) * | 2013-07-30 | 2021-01-27 | 코쿠리츠켄큐카이하츠호진 죠호츠신켄큐키코 | 반도체 발광 소자 및 그 제조 방법 |
| TWI632696B (zh) * | 2013-10-11 | 2018-08-11 | 王子控股股份有限公司 | 半導體發光元件用基板之製造方法、半導體發光元件之製 造方法、半導體發光元件用基板、以及半導體發光元件 |
| DE102014108301A1 (de) * | 2014-06-12 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
-
2013
- 2013-03-29 EP EP15174886.0A patent/EP2942822A1/en not_active Withdrawn
- 2013-03-29 BR BR112014024516A patent/BR112014024516A2/pt not_active Application Discontinuation
- 2013-03-29 KR KR1020147025962A patent/KR101763460B1/ko not_active Expired - Fee Related
- 2013-03-29 RU RU2014144362/28A patent/RU2604568C2/ru not_active IP Right Cessation
- 2013-03-29 KR KR1020167035141A patent/KR101862500B1/ko not_active Expired - Fee Related
- 2013-03-29 EP EP15174876.1A patent/EP2942821A1/en not_active Withdrawn
- 2013-03-29 US US14/389,968 patent/US9614136B2/en not_active Expired - Fee Related
- 2013-03-29 WO PCT/JP2013/059635 patent/WO2013150984A1/ja not_active Ceased
- 2013-03-29 EP EP13771897.9A patent/EP2835836B1/en active Active
- 2013-03-29 JP JP2014509138A patent/JP6235459B2/ja not_active Expired - Fee Related
- 2013-03-29 CN CN201380018450.7A patent/CN104205370B/zh not_active Expired - Fee Related
- 2013-03-29 EP EP15174863.9A patent/EP2942820A1/en not_active Withdrawn
- 2013-03-29 EP EP15174860.5A patent/EP2942819A1/en not_active Withdrawn
- 2013-03-29 IN IN1916MUN2014 patent/IN2014MN01916A/en unknown
- 2013-04-02 TW TW102111965A patent/TWI531086B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP6235459B2 (ja) | 2017-11-22 |
| EP2942822A1 (en) | 2015-11-11 |
| KR101862500B1 (ko) | 2018-05-29 |
| EP2942820A1 (en) | 2015-11-11 |
| EP2835836A1 (en) | 2015-02-11 |
| RU2014144362A (ru) | 2016-05-27 |
| JPWO2013150984A1 (ja) | 2015-12-17 |
| EP2835836B1 (en) | 2019-06-19 |
| KR20140133867A (ko) | 2014-11-20 |
| BR112014024516A2 (pt) | 2017-07-25 |
| TWI531086B (zh) | 2016-04-21 |
| KR101763460B1 (ko) | 2017-07-31 |
| US9614136B2 (en) | 2017-04-04 |
| EP2835836A4 (en) | 2015-08-05 |
| EP2942819A1 (en) | 2015-11-11 |
| CN104205370A (zh) | 2014-12-10 |
| WO2013150984A1 (ja) | 2013-10-10 |
| KR20160148052A (ko) | 2016-12-23 |
| CN104205370B (zh) | 2017-03-22 |
| RU2604568C2 (ru) | 2016-12-10 |
| US20150048380A1 (en) | 2015-02-19 |
| TW201344959A (zh) | 2013-11-01 |
| EP2942821A1 (en) | 2015-11-11 |
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