TWI531086B - An optical substrate, a semiconductor light-emitting element, and a semiconductor light-emitting element - Google Patents
An optical substrate, a semiconductor light-emitting element, and a semiconductor light-emitting element Download PDFInfo
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- TWI531086B TWI531086B TW102111965A TW102111965A TWI531086B TW I531086 B TWI531086 B TW I531086B TW 102111965 A TW102111965 A TW 102111965A TW 102111965 A TW102111965 A TW 102111965A TW I531086 B TWI531086 B TW I531086B
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- convex
- uneven structure
- concave
- substrate
- convex portion
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (7)
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| JP2012084208 | 2012-04-02 | ||
| JP2012103490 | 2012-04-27 | ||
| JP2012103489 | 2012-04-27 | ||
| JP2012227295 | 2012-10-12 | ||
| JP2012267488 | 2012-12-06 | ||
| JP2012267377 | 2012-12-06 | ||
| JP2012280241 | 2012-12-21 |
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| TW201344959A TW201344959A (zh) | 2013-11-01 |
| TWI531086B true TWI531086B (zh) | 2016-04-21 |
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| TWI854755B (zh) * | 2022-12-01 | 2024-09-01 | 台灣光罩股份有限公司 | 用以測試半導體元件之測試系統 |
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| JP5689533B2 (ja) * | 2011-08-31 | 2015-03-25 | 旭化成イーマテリアルズ株式会社 | 光学用基材、半導体発光素子、インプリント用モールドおよび露光方法 |
| JP6235459B2 (ja) * | 2012-04-02 | 2017-11-22 | 旭化成株式会社 | 光学基板、半導体発光素子及び半導体発光素子の製造方法 |
| KR101421026B1 (ko) * | 2012-06-12 | 2014-07-22 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출층 기판 및 그 제조방법 |
| EP2922103B1 (en) | 2012-08-21 | 2017-04-05 | Oji Holdings Corporation | Substrate for semiconductor light emitting elements and semiconductor light emitting element |
| DE102013108876B4 (de) * | 2013-08-16 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Fotolithografisches Verfahren zur Herstellung einer Struktur in einem Strahlung emittierenden Halbleiterbauelement |
| CN104459852B (zh) * | 2013-09-22 | 2017-02-01 | 清华大学 | 金属光栅的制备方法 |
| CN104459855A (zh) * | 2013-09-22 | 2015-03-25 | 清华大学 | 金属光栅的制备方法 |
| CN104459854B (zh) * | 2013-09-22 | 2017-12-01 | 清华大学 | 金属光栅的制备方法 |
| TWI632696B (zh) * | 2013-10-11 | 2018-08-11 | 王子控股股份有限公司 | 半導體發光元件用基板之製造方法、半導體發光元件之製 造方法、半導體發光元件用基板、以及半導體發光元件 |
| TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| JP2015120879A (ja) * | 2013-11-20 | 2015-07-02 | 旭化成イーマテリアルズ株式会社 | レジスト組成物 |
| KR102099441B1 (ko) * | 2013-12-19 | 2020-04-09 | 엘지이노텍 주식회사 | 발광소자 |
| KR101894342B1 (ko) * | 2013-12-27 | 2018-09-03 | 제이엑스티지 에네루기 가부시키가이샤 | 발광 소자 |
| JP6295276B2 (ja) * | 2014-01-10 | 2018-03-14 | Ｊｘｔｇエネルギー株式会社 | 光学基板、光学基板の製造に用いられるモールド、及び光学基板を含む発光素子 |
| US9618836B2 (en) * | 2014-04-22 | 2017-04-11 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production |
| JP6438678B2 (ja) * | 2014-05-14 | 2018-12-19 | Ｊｘｔｇエネルギー株式会社 | 凹凸構造を有するフィルム部材 |
| KR20170030473A (ko) * | 2014-07-10 | 2017-03-17 | 에스씨아이브이에이엑스 가부시키가이샤 | 광학 부재 및 그 제조 방법 |
| TWI556002B (zh) * | 2014-08-05 | 2016-11-01 | 群創光電股份有限公司 | 抗反射結構及電子裝置 |
| CN105449058A (zh) * | 2014-09-02 | 2016-03-30 | 展晶科技(深圳)有限公司 | 磊晶基板、磊晶基板的制造方法及发光二极管 |
| TWI605616B (zh) * | 2015-08-12 | 2017-11-11 | 固美實國際股份有限公司 | 用於發光二極體的圖案化基板 |
| KR102412409B1 (ko) * | 2015-10-26 | 2022-06-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
| JP6229707B2 (ja) | 2015-11-26 | 2017-11-15 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
| US10340415B2 (en) * | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
| TWI635639B (zh) * | 2017-01-05 | 2018-09-11 | 機光科技股份有限公司 | 高折射高導熱ｏｌｅｄ元件 |
| US10243099B2 (en) | 2017-05-16 | 2019-03-26 | Epistar Corporation | Light-emitting device |
| KR102343099B1 (ko) * | 2017-06-07 | 2021-12-24 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| CN109427940B (zh) * | 2017-08-22 | 2020-04-24 | 比亚迪股份有限公司 | 发光二极管外延片及其制造方法 |
| DE102018116783B4 (de) | 2017-09-29 | 2024-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitersubstrat und Verfahren zum Fertigen von diesem |
| KR102456458B1 (ko) * | 2017-12-27 | 2022-10-18 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
| US11181668B2 (en) * | 2018-07-13 | 2021-11-23 | University Of Notre Dame Du Lac | High contrast gradient index lens antennas |
| WO2020157741A1 (en) * | 2019-01-28 | 2020-08-06 | B.G. Negev Technologies & Applications Ltd., At Ben-Gurion University | Structure for a waveguide facet |
| US11249206B2 (en) * | 2020-01-06 | 2022-02-15 | Canon Medical Systems Corporation | Method and system for PET detector efficiency normalization |
| CN113436983B (zh) * | 2020-03-19 | 2024-08-13 | 京东方科技集团股份有限公司 | μLED基板及制备方法、EL检测方法及装置 |
| CN111785836B (zh) * | 2020-06-27 | 2022-12-16 | 上海师范大学 | 一种具有蛾眼结构空穴传输层的太阳能电池及其制备方法 |
| RU202751U1 (ru) * | 2020-08-11 | 2021-03-04 | Постовой Денис Александрович | Диодная сборка |
| FR3115930B1 (fr) * | 2020-10-29 | 2024-03-22 | Commissariat Energie Atomique | Diode électroluminescente à structure de contact tridimensionnelle, écran d’affichage et procédé de fabrication associé |
| DE102020215937A1 (de) * | 2020-12-15 | 2022-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines substrats mit einer strukturierten oberfläche und substrat mit einer strukturierten oberfläche |
| CN116500403B (zh) * | 2023-04-04 | 2025-09-12 | 南昌大学 | 一种测量led芯片光提取效率及内量子效率的方法 |
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- 2013-03-29 IN IN1916MUN2014 patent/IN2014MN01916A/en unknown
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- 2013-03-29 EP EP15174886.0A patent/EP2942822A1/en not_active Withdrawn
- 2013-03-29 EP EP13771897.9A patent/EP2835836B1/en active Active
- 2013-03-29 CN CN201380018450.7A patent/CN104205370B/zh not_active Expired - Fee Related
- 2013-03-29 EP EP15174863.9A patent/EP2942820A1/en not_active Withdrawn
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- 2013-03-29 KR KR1020147025962A patent/KR101763460B1/ko not_active Expired - Fee Related
- 2013-03-29 EP EP15174876.1A patent/EP2942821A1/en not_active Withdrawn
- 2013-03-29 KR KR1020167035141A patent/KR101862500B1/ko not_active Expired - Fee Related
- 2013-03-29 EP EP15174860.5A patent/EP2942819A1/en not_active Withdrawn
- 2013-03-29 RU RU2014144362/28A patent/RU2604568C2/ru not_active IP Right Cessation
- 2013-03-29 BR BR112014024516A patent/BR112014024516A2/pt not_active Application Discontinuation
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI854755B (zh) * | 2022-12-01 | 2024-09-01 | 台灣光罩股份有限公司 | 用以測試半導體元件之測試系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2942820A1 (en) | 2015-11-11 |
| EP2942819A1 (en) | 2015-11-11 |
| KR101763460B1 (ko) | 2017-07-31 |
| BR112014024516A2 (pt) | 2017-07-25 |
| RU2604568C2 (ru) | 2016-12-10 |
| WO2013150984A1 (ja) | 2013-10-10 |
| RU2014144362A (ru) | 2016-05-27 |
| CN104205370B (zh) | 2017-03-22 |
| KR101862500B1 (ko) | 2018-05-29 |
| US20150048380A1 (en) | 2015-02-19 |
| US9614136B2 (en) | 2017-04-04 |
| EP2835836B1 (en) | 2019-06-19 |
| JP6235459B2 (ja) | 2017-11-22 |
| EP2942822A1 (en) | 2015-11-11 |
| JPWO2013150984A1 (ja) | 2015-12-17 |
| KR20140133867A (ko) | 2014-11-20 |
| EP2835836A1 (en) | 2015-02-11 |
| TW201344959A (zh) | 2013-11-01 |
| EP2942821A1 (en) | 2015-11-11 |
| EP2835836A4 (en) | 2015-08-05 |
| CN104205370A (zh) | 2014-12-10 |
| KR20160148052A (ko) | 2016-12-23 |
| IN2014MN01916A (OSRAM) | 2015-07-10 |
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