RU2012106650A - Формуемые в расплаве стекла, содержащие диоксид кремния и натрий - Google Patents

Формуемые в расплаве стекла, содержащие диоксид кремния и натрий Download PDF

Info

Publication number
RU2012106650A
RU2012106650A RU2012106650/03A RU2012106650A RU2012106650A RU 2012106650 A RU2012106650 A RU 2012106650A RU 2012106650/03 A RU2012106650/03 A RU 2012106650/03A RU 2012106650 A RU2012106650 A RU 2012106650A RU 2012106650 A RU2012106650 A RU 2012106650A
Authority
RU
Russia
Prior art keywords
glass
photovoltaic device
less
glass contains
total
Prior art date
Application number
RU2012106650/03A
Other languages
English (en)
Inventor
Брюс Г. ЭЙТКЕН
Джеймс Е. мл. ДИКИНСОН
Тимоти Дж. КИЧЕНСКИ
Original Assignee
Корнинг Инкорпорейтед
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Корнинг Инкорпорейтед filed Critical Корнинг Инкорпорейтед
Publication of RU2012106650A publication Critical patent/RU2012106650A/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)

Abstract

1. Стекло, содержащее, мас.%:50-72% SiO;от более чем 15 до 25% AlO;0-10% BO;10-25% суммарного MO; иот более чем 0 до 25% суммарного RO;где M является щелочным металлом, выбранным из Na, K, Li, Rb и Cs, и где стекло содержит, по меньшей мере, 9 мас.% NaO, и где R является щелочноземельным металлом, выбранным из Mg, Ca, Ba и Sr.2. Стекло по п.1, где стекло содержит менее чем 2,5 мас.% MgO.3. Стекло по п.2, где стекло содержит менее чем 4 мас.% KO.4. Стекло по п.2, где стекло имеет температуру деформации 535°C или более, коэффициент термического расширения 50·10или более, и вязкость при температуре ликвидуса 130000 П или более.5. Стекло по п.4, где стекло содержит менее чем 4 мас.% KO.6. Стекло по п.1, где стекло содержит менее чем 4 мас.% KO.7. Стекло по п.1, где стекло содержит от 0,5 до менее чем 14 мас.% RO.8. Стекло по п.7, где стекло содержит менее чем 2,5 мас.% MgO.9. Стекло по п.8, где стекло содержит менее чем 4 мас.% KO.10. Стекло по п.8, где стекло имеет температуру деформации 535°C или более, коэффициент термического расширения 50·10или более, и вязкость при температуре ликвидуса 130000 П или более.11. Стекло по п.10, где стекло содержит менее чем 4 мас.% KO.12. Стекло, содержащее, мас.%:50-72 SiO;10-25 AlO;0-10 BO;10-25 суммарного MO; иот 0,5 и до менее чем 14 RO;где M является щелочным металлом, выбранным из Na, K, Li, Rb и Cs, и где стекло содержит, по меньшей мере, 9 мас.% NaO, и где R является щелочноземельным металлом, выбранным из Mg, Ca, Ba и Sr.13. Стекло по п.12, где стекло содержит менее чем 2,5 мас.% MgO.14. Фотоэлектрическое устройство, содержащее стекло, содержащее, мас.%:50-72% SiO;10-25% AlO;0-10% BO;10-25% суммарного MO; иот более чем 0 до 25% суммарного RO;где M является щелочным металлом, выбранным из Na, K, Li, Rb и Cs, и где стекло содержит, по меньшей мере, 9 мас.% NaO, и где R является щелочнозе�

Claims (25)

1. Стекло, содержащее, мас.%:
50-72% SiO2;
от более чем 15 до 25% Al2O3;
0-10% B2O3;
10-25% суммарного M2O; и
от более чем 0 до 25% суммарного RO;
где M является щелочным металлом, выбранным из Na, K, Li, Rb и Cs, и где стекло содержит, по меньшей мере, 9 мас.% Na2O, и где R является щелочноземельным металлом, выбранным из Mg, Ca, Ba и Sr.
2. Стекло по п.1, где стекло содержит менее чем 2,5 мас.% MgO.
3. Стекло по п.2, где стекло содержит менее чем 4 мас.% K2O.
4. Стекло по п.2, где стекло имеет температуру деформации 535°C или более, коэффициент термического расширения 50·10-7 или более, и вязкость при температуре ликвидуса 130000 П или более.
5. Стекло по п.4, где стекло содержит менее чем 4 мас.% K2O.
6. Стекло по п.1, где стекло содержит менее чем 4 мас.% K2O.
7. Стекло по п.1, где стекло содержит от 0,5 до менее чем 14 мас.% RO.
8. Стекло по п.7, где стекло содержит менее чем 2,5 мас.% MgO.
9. Стекло по п.8, где стекло содержит менее чем 4 мас.% K2O.
10. Стекло по п.8, где стекло имеет температуру деформации 535°C или более, коэффициент термического расширения 50·10-7 или более, и вязкость при температуре ликвидуса 130000 П или более.
11. Стекло по п.10, где стекло содержит менее чем 4 мас.% K2O.
12. Стекло, содержащее, мас.%:
50-72 SiO2;
10-25 Al2O3;
0-10 B2O3;
10-25 суммарного M2O; и
от 0,5 и до менее чем 14 RO;
где M является щелочным металлом, выбранным из Na, K, Li, Rb и Cs, и где стекло содержит, по меньшей мере, 9 мас.% Na2O, и где R является щелочноземельным металлом, выбранным из Mg, Ca, Ba и Sr.
13. Стекло по п.12, где стекло содержит менее чем 2,5 мас.% MgO.
14. Фотоэлектрическое устройство, содержащее стекло, содержащее, мас.%:
50-72% SiO2;
10-25% Al2O3;
0-10% B2O3;
10-25% суммарного M2O; и
от более чем 0 до 25% суммарного RO;
где M является щелочным металлом, выбранным из Na, K, Li, Rb и Cs, и где стекло содержит, по меньшей мере, 9 мас.% Na2O, и где R является щелочноземельным металлом, выбранным из Mg, Ca, Ba и Sr.
15. Фотоэлектрическое устройство по п.14, в котором стекло имеет температуру деформации 535°C или более, коэффициент термического расширения 50·10-7 или более, и вязкость при температуре ликвидуса 130000 П или более.
16. Фотоэлектрическое устройство по п.14, в котором стекло содержит от более чем 15 до 25 мас.% Al2O3.
17. Фотоэлектрическое устройство по п.14, в котором стекло содержит 55-72 мас.% SiO2.
18. Фотоэлектрическое устройство по п.17, в котором стекло содержит от более чем 15 до 25 мас.% Al2O3.
19. Фотоэлектрическое устройство по п.14, в котором стекло содержит 9-17 мас.% Na2O.
20. Фотоэлектрическое устройство по п.14, в котором стекло содержит от 0,5 до менее чем 14 мас.% RO.
21. Фотоэлектрическое устройство по п.14, в котором стекло содержит от более чем 15 до 25 мас.% Al2O3, и содержащее от 0,5 до менее 14 мас.% RO.
22. Фотоэлектрическое устройство по п.14, в котором стекло находится в виде тонкого листа.
23. Фотоэлектрическое устройство по п.22, в котором стекло находится в виде тонкого листа и является подложкой или вышележащим слоем.
24. Фотоэлектрическое устройство по п.23, содержащее активную фотоэлектрическую среду, содержащую диселенид галлия-индия-меди или теллурид кадмия, прилегающую к подложке или вышележащему слою.
25. Фотоэлектрическое устройство по п.24, содержащее запирающий слой между активной фотоэлектрической средой и подложкой или вышележащим слоем.
RU2012106650/03A 2009-07-24 2010-07-23 Формуемые в расплаве стекла, содержащие диоксид кремния и натрий RU2012106650A (ru)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US22829009P 2009-07-24 2009-07-24
US61/228,290 2009-07-24
US26393009P 2009-11-24 2009-11-24
US61/263,930 2009-11-24
US34758910P 2010-05-24 2010-05-24
US61/347,589 2010-05-24
US12/840,754 US8647995B2 (en) 2009-07-24 2010-07-21 Fusion formable silica and sodium containing glasses
US12/840,754 2010-07-21
PCT/US2010/043027 WO2011011667A1 (en) 2009-07-24 2010-07-23 Fusion formable silica and sodium containing glasses

Publications (1)

Publication Number Publication Date
RU2012106650A true RU2012106650A (ru) 2013-08-27

Family

ID=43496239

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2012106650/03A RU2012106650A (ru) 2009-07-24 2010-07-23 Формуемые в расплаве стекла, содержащие диоксид кремния и натрий

Country Status (13)

Country Link
US (2) US8647995B2 (ru)
EP (1) EP2456727B1 (ru)
JP (2) JP5686801B2 (ru)
KR (1) KR101426174B1 (ru)
CN (2) CN107285624A (ru)
AU (1) AU2010275513B2 (ru)
CA (1) CA2769014A1 (ru)
IN (1) IN2012DN00690A (ru)
MX (1) MX2012001054A (ru)
RU (1) RU2012106650A (ru)
SG (1) SG178099A1 (ru)
TW (1) TWI534115B (ru)
WO (1) WO2011011667A1 (ru)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7593154B2 (en) * 2005-10-11 2009-09-22 Sage Electrochromics, Inc. Electrochromic devices having improved ion conducting layers
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
FR2948356B1 (fr) 2009-07-22 2011-08-19 Saint Gobain Dispositif electrochrome
US8647995B2 (en) * 2009-07-24 2014-02-11 Corsam Technologies Llc Fusion formable silica and sodium containing glasses
DE102009044142A1 (de) * 2009-09-30 2011-03-31 Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg Dünnschicht-Bauelement auf Glas, ein Verfahren zu dessen Herstellung und dessen Verwendung
WO2011049146A1 (ja) * 2009-10-20 2011-04-28 旭硝子株式会社 Ｃｕ－Ｉｎ－Ｇａ－Ｓｅ太陽電池用ガラス板およびこれを用いた太陽電池
US9302937B2 (en) 2010-05-14 2016-04-05 Corning Incorporated Damage-resistant glass articles and method
WO2011145661A1 (ja) * 2010-05-19 2011-11-24 旭硝子株式会社 化学強化用ガラスおよびディスプレイ装置用ガラス板
CN102933515A (zh) * 2010-06-03 2013-02-13 旭硝子株式会社 玻璃基板及其制造方法
DE102010023366B4 (de) * 2010-06-10 2017-09-21 Schott Ag Verwendung von Gläsern für Photovoltaik-Anwendungen
JP2012036074A (ja) * 2010-07-12 2012-02-23 Nippon Electric Glass Co Ltd ガラス板
US8492297B2 (en) * 2010-08-25 2013-07-23 Sage Electrochromics, Inc. Silica soda lime glass composition and use thereof
JP5909937B2 (ja) * 2010-09-09 2016-04-27 日本電気硝子株式会社 半導体パッケージ用カバーガラス及びその製造方法
US9434644B2 (en) * 2010-09-30 2016-09-06 Avanstrate Inc. Cover glass and method for producing cover glass
JP5612233B1 (ja) * 2010-12-24 2014-10-22 旭硝子株式会社 化学強化用ガラス
JP5834793B2 (ja) * 2010-12-24 2015-12-24 旭硝子株式会社 化学強化ガラスの製造方法
FR2972446B1 (fr) * 2011-03-09 2017-11-24 Saint Gobain Substrat pour cellule photovoltaique
EP2692706B1 (en) * 2011-03-31 2016-03-30 Nippon Sheet Glass Company, Limited Glass composition suitable for chemical strengthening and chemically strengthened glass article
TWI572480B (zh) 2011-07-25 2017-03-01 康寧公司 經層壓及離子交換之強化玻璃疊層
US9517966B2 (en) 2011-10-25 2016-12-13 Corning Incorporated Glass compositions with improved chemical and mechanical durability
WO2013063002A2 (en) 2011-10-25 2013-05-02 Corning Incorporated Alkaline earth alumino-silicate glass compositions with improved chemical and mechanical durability
US10350139B2 (en) 2011-10-25 2019-07-16 Corning Incorporated Pharmaceutical glass packaging assuring pharmaceutical sterility
US11707409B2 (en) 2011-10-25 2023-07-25 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
EP3299346B1 (en) 2011-10-25 2021-06-30 Corning Incorporated Glass compositions with improved chemical and mechanical durability
KR20140088109A (ko) * 2011-10-31 2014-07-09 아사히 가라스 가부시키가이샤 유리 기판 및 그 제조 방법
CN107698141A (zh) * 2011-11-18 2018-02-16 旭硝子株式会社 化学强化用玻璃及化学强化玻璃
US9701580B2 (en) * 2012-02-29 2017-07-11 Corning Incorporated Aluminosilicate glasses for ion exchange
CN104379532B9 (zh) 2012-02-29 2021-08-24 康宁股份有限公司 可离子交换的低cte玻璃组合物以及包含该玻璃组合物的玻璃制品
US8746010B2 (en) * 2012-03-12 2014-06-10 Corning Incorporated Methods for reducing zirconia defects in glass sheets
US10273048B2 (en) 2012-06-07 2019-04-30 Corning Incorporated Delamination resistant glass containers with heat-tolerant coatings
EP2903945B1 (en) * 2012-10-04 2020-09-02 Corning Incorporated Article with glass layer and glass-ceramic layer and method of making the article
US10202303B2 (en) 2012-10-04 2019-02-12 Corning Incorporated Compressively stressed laminated glass article via photosensitive glass and method of making the article
US11352287B2 (en) 2012-11-28 2022-06-07 Vitro Flat Glass Llc High strain point glass
US20140238481A1 (en) * 2013-02-28 2014-08-28 Corning Incorporated Sodium out-flux for photovoltaic cigs glasses
US9713572B2 (en) 2013-04-24 2017-07-25 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9707155B2 (en) 2013-04-24 2017-07-18 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9700485B2 (en) 2013-04-24 2017-07-11 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9707154B2 (en) 2013-04-24 2017-07-18 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9839579B2 (en) 2013-04-24 2017-12-12 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9603775B2 (en) 2013-04-24 2017-03-28 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9849066B2 (en) 2013-04-24 2017-12-26 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9700486B2 (en) 2013-04-24 2017-07-11 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9707153B2 (en) 2013-04-24 2017-07-18 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9717649B2 (en) 2013-04-24 2017-08-01 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9717648B2 (en) 2013-04-24 2017-08-01 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
KR102225583B1 (ko) * 2013-04-29 2021-03-10 코닝 인코포레이티드 광기전력 모듈 패키지
WO2015026575A1 (en) * 2013-08-21 2015-02-26 Siva Power, Inc. Hermetically sealed glass photovoltaic module
EP3034543B1 (en) 2013-09-20 2021-03-31 Lintec Corporation Curable composition, curing product, and method for using curable composition
DE102013019003A1 (de) * 2013-11-13 2015-05-13 Taiwan Glass Ind. Corp. Alkali-Alumino-Silikatglas
WO2015077109A1 (en) * 2013-11-20 2015-05-28 Corning Incorporated Scratch-resistant boroaluminosilicate glass
KR20170066580A (ko) 2014-10-07 2017-06-14 코닝 인코포레이티드 결정된 응력 프로파일을 갖는 유리 제품 및 이의 제조 방법
CN107615183B (zh) * 2015-06-05 2022-01-25 国际壳牌研究有限公司 模型预测控制应用程序中相对于最佳性能值的优良性能的系统和方法
DE102015116097B4 (de) * 2015-09-23 2017-09-21 Schott Ag Chemisch beständiges Glas und dessen Verwendung
US11167528B2 (en) * 2015-10-14 2021-11-09 Corning Incorporated Laminated glass article with determined stress profile and method for forming the same
KR102642779B1 (ko) 2015-10-22 2024-03-05 코닝 인코포레이티드 고 투과 유리
CN105565647A (zh) * 2015-12-14 2016-05-11 厦门博恩思应用材料科技有限公司 一种不完全熔合玻璃组及其制备方法
KR102527969B1 (ko) 2017-01-09 2023-05-02 코닝 인코포레이티드 낮은 열팽창 계수를 갖는 이온-교환가능한 유리
US11214512B2 (en) 2017-12-19 2022-01-04 Owens Coming Intellectual Capital, LLC High performance fiberglass composition
GB201806356D0 (en) * 2018-04-18 2018-05-30 Alzahrani Ali Saleh A Chemically strengthened glass-ceramics
WO2021119750A1 (en) * 2019-12-18 2021-06-24 Macquarie University Aluminosilicate glass
DE112022004003T5 (de) * 2021-08-17 2024-05-29 Nippon Electric Glass Co., Ltd. Glassubstrat für die weltraumbasierte solarstromerzeugung

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156755A (en) 1978-04-19 1979-05-29 Ppg Industries, Inc. Lithium containing ion exchange strengthened glass
US4298389A (en) * 1980-02-20 1981-11-03 Corning Glass Works High transmission glasses for solar applications
JP2743333B2 (ja) 1989-10-31 1998-04-22 日本電気硝子株式会社 基板用ガラス
JP3831957B2 (ja) 1994-09-14 2006-10-11 旭硝子株式会社 ガラス組成物及びプラズマディスプレー用基板
US5631195A (en) * 1994-09-14 1997-05-20 Asahi Glass Company Ltd. Glass composition and substrate for plasma display
JPH0936400A (ja) * 1995-07-25 1997-02-07 Asahi Glass Co Ltd 太陽電池用ガラス基板及びその製造方法
US5674790A (en) 1995-12-15 1997-10-07 Corning Incorporated Strengthening glass by ion exchange
JPH10152339A (ja) 1996-09-27 1998-06-09 Nippon Sheet Glass Co Ltd 耐熱性ガラス組成物
JP3904158B2 (ja) 1996-11-27 2007-04-11 Ｈｏｙａ株式会社 テクスチャー付磁気ディスク用ガラス基板の製造方法
US6060168A (en) 1996-12-17 2000-05-09 Corning Incorporated Glasses for display panels and photovoltaic devices
JPH10241134A (ja) 1996-12-26 1998-09-11 Hoya Corp 情報記録媒体用ガラス基板及びこれを用いた磁気記録媒体
US5972460A (en) 1996-12-26 1999-10-26 Hoya Corporation Information recording medium
FR2758550B1 (fr) 1997-01-17 1999-02-12 Saint Gobain Vitrage Compositions de verre silico-sodo-calcique et leurs applications
JPH11135819A (ja) 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd 化合物薄膜太陽電池
JPH11180728A (ja) 1997-12-22 1999-07-06 Central Glass Co Ltd ディスプレイ装置用基板ガラス組成物
JPH11180727A (ja) 1997-12-22 1999-07-06 Central Glass Co Ltd 表示装置用基板ガラス組成物
JP4320823B2 (ja) 1998-02-27 2009-08-26 旭硝子株式会社 基板用ガラス組成物
JPH11302032A (ja) * 1998-04-17 1999-11-02 Nippon Sheet Glass Co Ltd ガラス組成物およびそれを用いた情報記録媒体用基板
JPH11310433A (ja) 1998-04-27 1999-11-09 Central Glass Co Ltd 表示装置用基板ガラス
JPH11335133A (ja) 1998-05-27 1999-12-07 Central Glass Co Ltd 表示装置用基板ガラス
EP1152990B1 (en) * 1998-11-30 2012-10-10 Corning Incorporated Glasses for flat panel displays
US6207603B1 (en) * 1999-02-05 2001-03-27 Corning Incorporated Solar cell cover glass
DE60006176T2 (de) 1999-03-25 2004-04-22 Central Glass Co., Ltd., Ube Glaszusammensetzung, durch Ionenaustausch verstärkter Glasgegenstand und Verfahren zu dessen Herstellung
US6440531B1 (en) 1999-05-13 2002-08-27 Nippon Sheet Glass Co., Ltd Hydrofluoric acid etched substrate for information recording medium
DE19934072C2 (de) * 1999-07-23 2001-06-13 Schott Glas Alkalifreies Aluminoborosilicatglas, seine Verwendungen und Verfahren zu seiner Herstellung
DE19939789A1 (de) * 1999-08-21 2001-02-22 Schott Glas Alkalifreie Aluminoborosilicatgläser und deren Verwendungen
DE19942259C1 (de) * 1999-09-04 2001-05-17 Schott Glas Erdalkalialuminoborosilicatglas und dessen Verwendungen
DE10000836B4 (de) 2000-01-12 2005-03-17 Schott Ag Alkalifreies Aluminoborosilicatglas und dessen Verwendungen
DE10005088C1 (de) 2000-02-04 2001-03-15 Schott Glas Alkalihaltiges Aluminoborosilicatglas und seine Verwendung
JP2002003241A (ja) 2000-06-19 2002-01-09 Central Glass Co Ltd プレス成形用ガラスおよび情報記録媒体用基板ガラス
JP2002025762A (ja) 2000-07-04 2002-01-25 Nippon Electric Glass Co Ltd 無機ｅｌディスプレイガラス基板
JP2002053340A (ja) 2000-08-09 2002-02-19 Nippon Electric Glass Co Ltd 無機ｅｌディスプレイガラス基板
JP2002175844A (ja) * 2000-12-07 2002-06-21 Seiko Epson Corp 太陽電池
JP2002174810A (ja) 2000-12-08 2002-06-21 Hoya Corp ディスプレイ用ガラス基板及びその製造方法並びにこれを用いたディスプレイ
DE10064804C2 (de) * 2000-12-22 2003-03-20 Schott Glas Alkalifreie Aluminoborosilicatgläser und ihre Verwendung
JP3702360B2 (ja) 2001-01-04 2005-10-05 日本板硝子株式会社 化学強化用のガラス素板の製造方法
JP4785274B2 (ja) * 2001-05-29 2011-10-05 日本板硝子株式会社 ガラス物品およびそれを用いた磁気記録媒体用ガラス基板
JP3995902B2 (ja) * 2001-05-31 2007-10-24 Ｈｏｙａ株式会社 情報記録媒体用ガラス基板及びそれを用いた磁気情報記録媒体
JP4863580B2 (ja) * 2001-07-25 2012-01-25 京セラ株式会社 ガラス組成物および絶縁皮膜、並びにシリコンデバイス
US6753279B2 (en) * 2001-10-30 2004-06-22 Corning Incorporated Glass composition for display panels
JP2003212591A (ja) * 2002-01-25 2003-07-30 Hoya Corp 陰極線管パネル用母材ガラス、陰極線管用パネルおよびその製造方法
JP2003261352A (ja) 2002-03-08 2003-09-16 Asahi Techno Glass Corp ディスプレイ用ガラスおよびディスプレイ用ガラス部品
JP4446683B2 (ja) * 2002-05-24 2010-04-07 Ｈｏｙａ株式会社 磁気記録媒体用ガラス基板
US7309671B2 (en) 2002-05-24 2007-12-18 Nippon Sheet Glass Co., Ltd. Glass composition, glass article, glass substrate for magnetic recording media, and method for producing the same
WO2004009504A1 (ja) 2002-07-24 2004-01-29 Nippon Sheet Glass Company, Limited レーザ加工用ガラス
US6992030B2 (en) * 2002-08-29 2006-01-31 Corning Incorporated Low-density glass for flat panel display substrates
JP2004131314A (ja) 2002-10-09 2004-04-30 Asahi Glass Co Ltd 透明導電膜付き化学強化ガラス基板、およびその製造方法
JP4320772B2 (ja) 2003-02-13 2009-08-26 日本電気硝子株式会社 フラットパネルディスプレイ装置用ガラス基板
JP4656863B2 (ja) * 2003-06-06 2011-03-23 Ｈｏｙａ株式会社 ジルコニウムを含むガラス組成物、化学強化ガラス物品、磁気記録媒体用ガラス基板、およびガラス板の製造方法
US7273668B2 (en) 2003-06-06 2007-09-25 Hoya Corporation Glass composition including zirconium, chemically strengthened glass article, glass substrate for magnetic recording media, and method of producing glass sheet
JP2006083045A (ja) 2004-09-17 2006-03-30 Hitachi Ltd ガラス部材
CN101080511A (zh) * 2004-11-10 2007-11-28 德斯塔尔科技公司 用于使用连续过程形成薄膜太阳能电池的方法和设备
CN1298644C (zh) * 2005-02-28 2007-02-07 常熟市幸福玻璃建材有限公司 太阳能光伏电池组件的盖板玻璃的加工工艺
JP4977965B2 (ja) 2005-05-02 2012-07-18 旭硝子株式会社 無アルカリガラスおよびその製造方法
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
JP5232362B2 (ja) * 2006-04-17 2013-07-10 株式会社カネカ 集積化薄膜光電変換装置の製造方法および、その製造方法で得られうる集積化薄膜光電変換装置。
SG10201606460SA (en) 2006-06-08 2016-09-29 Hoya Corp Glass for use in substrate for information recording medium, substrate for information recording medium and information recording medium, and their manufacturing method
DE102006042620B4 (de) 2006-09-04 2012-01-26 Schott Ag Verwendung eines Aluminoborosilikatglases als Substratglas
JP5071878B2 (ja) 2006-09-12 2012-11-14 日本電気硝子株式会社 無アルカリガラスおよびこれを用いた無アルカリガラス基板
JP5808069B2 (ja) * 2007-02-16 2015-11-10 日本電気硝子株式会社 太陽電池用ガラス基板
KR20080079058A (ko) 2007-02-26 2008-08-29 엘지전자 주식회사 박막형 태양전지 모듈과 그의 제조방법
JP5483821B2 (ja) * 2007-02-27 2014-05-07 ＡｖａｎＳｔｒａｔｅ株式会社 表示装置用ガラス基板および表示装置
US7666511B2 (en) * 2007-05-18 2010-02-23 Corning Incorporated Down-drawable, chemically strengthened glass for cover plate
US8349454B2 (en) * 2007-06-07 2013-01-08 Nippon Electric Glass Co., Ltd. Strengthened glass substrate and process for producing the same
JP5234387B2 (ja) 2007-06-12 2013-07-10 日本電気硝子株式会社 無アルカリガラスおよび無アルカリガラス基板並びにその製造方法
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
JP5467490B2 (ja) * 2007-08-03 2014-04-09 日本電気硝子株式会社 強化ガラス基板の製造方法及び強化ガラス基板
JP5339173B2 (ja) * 2007-09-27 2013-11-13 日本電気硝子株式会社 強化ガラス基板及びガラス並びに強化ガラス基板の製造方法
JP5103145B2 (ja) * 2007-11-15 2012-12-19 シャープ株式会社 光電変換装置用基板およびそれを用いた光電変換装置
AT10578U1 (de) 2007-12-18 2009-06-15 Plansee Metall Gmbh Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht
CN101980983B (zh) * 2008-02-26 2014-04-16 康宁股份有限公司 用于硅酸盐玻璃的澄清剂
US8232218B2 (en) * 2008-02-29 2012-07-31 Corning Incorporated Ion exchanged, fast cooled glasses
EP2426094B1 (en) * 2008-04-21 2014-10-22 Asahi Glass Company, Limited Glass plate for display panels, process for producing it, and process for producing TFT panel
EP2299536A4 (en) * 2008-06-17 2011-12-21 Nippon Electric Glass Co SUBSTRATE FOR SOLAR CELL AND OXIDE SEMICONDUCTOR ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL
JP5867953B2 (ja) * 2008-06-27 2016-02-24 日本電気硝子株式会社 強化ガラスおよび強化用ガラス
JP5614607B2 (ja) 2008-08-04 2014-10-29 日本電気硝子株式会社 強化ガラスおよびその製造方法
JP5644043B2 (ja) 2008-11-26 2014-12-24 横河電機株式会社 波長校正装置
US8647995B2 (en) * 2009-07-24 2014-02-11 Corsam Technologies Llc Fusion formable silica and sodium containing glasses
US8802581B2 (en) 2009-08-21 2014-08-12 Corning Incorporated Zircon compatible glasses for down draw
JP2011226137A (ja) 2010-04-19 2011-11-10 Okabe Co Ltd 入隅部補強金物
CN102933515A (zh) 2010-06-03 2013-02-13 旭硝子株式会社 玻璃基板及其制造方法

Also Published As

Publication number Publication date
AU2010275513A1 (en) 2012-03-01
SG178099A1 (en) 2012-03-29
JP2013500229A (ja) 2013-01-07
AU2010275513B2 (en) 2015-07-02
JP2015129083A (ja) 2015-07-16
CA2769014A1 (en) 2011-01-27
KR20120049296A (ko) 2012-05-16
JP5686801B2 (ja) 2015-03-18
WO2011011667A1 (en) 2011-01-27
TWI534115B (zh) 2016-05-21
IN2012DN00690A (ru) 2015-06-19
EP2456727A1 (en) 2012-05-30
US20140150867A1 (en) 2014-06-05
US20110017297A1 (en) 2011-01-27
EP2456727B1 (en) 2021-05-26
CN102639454A (zh) 2012-08-15
US9530910B2 (en) 2016-12-27
JP6193280B2 (ja) 2017-09-06
TW201118054A (en) 2011-06-01
US8647995B2 (en) 2014-02-11
MX2012001054A (es) 2012-06-12
CN107285624A (zh) 2017-10-24
KR101426174B1 (ko) 2014-08-01

Similar Documents

Publication Publication Date Title
RU2012106650A (ru) Формуемые в расплаве стекла, содержащие диоксид кремния и натрий
RU2011152979A (ru) Формуемое в расплаве натрийсодержащее стекло
RU2011118352A (ru) Стекло с промежуточным коэффициентом теплового расширения
JP2012504548A5 (ru)
JP2013500229A5 (ru)
RU2014117028A (ru) Композиции стекла с повышенной химической и механической стойкостью
JP2014500844A5 (ru)
WO2013025451A3 (en) Fusion formable alkali-free intermediate thermal expansion coefficient glass
JP2015501280A5 (ru)
ES2600482T3 (es) Disco con un elemento de conexión eléctrica
JP2015502899A5 (ru)
RU2008137651A (ru) Электродная структура для использования в электронном устройстве и способ ее изготовления
WO2010138784A3 (en) Fusion formable sodium free glass
ATE252064T1 (de) Alkalifreies aluminoborosilicatglas und dessen verwendung
WO2008149888A1 (ja) 無アルカリガラスおよび無アルカリガラス基板
MY158507A (en) Glass substrate for magnetic recording medium, magnetic recording medium, and glass substrate blank for magnetic recording medium
JP2015509903A5 (ru)
JP2017515779A5 (ru)
UA104879C2 (ru) Барьер для защиты от окружающей среды для жаростойкого субстрата, содержащего кремний
EA201391386A1 (ru) Многослойное изоляционное остекление, включающее два стеклопакета с низкой эмиссионной способностью
JP2011213568A (ja) ガラス板
TW200800828A (en) Aluminoborosilicate glass
FR3008695B1 (fr) Verre aluminosilicate dont la composition est exempte de metaux alcalins, convenant comme substrat de plaques de cuisson pour chauffage a induction
MY174696A (en) Substrate for device having an organic light-emitting diode
JP2006190994A5 (ru)

Legal Events

Date Code Title Description
FA93 Acknowledgement of application withdrawn (no request for examination)

Effective date: 20130724