RU2011152979A - Формуемое в расплаве натрийсодержащее стекло - Google Patents

Формуемое в расплаве натрийсодержащее стекло Download PDF

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RU2011152979A
RU2011152979A RU2011152979/03A RU2011152979A RU2011152979A RU 2011152979 A RU2011152979 A RU 2011152979A RU 2011152979/03 A RU2011152979/03 A RU 2011152979/03A RU 2011152979 A RU2011152979 A RU 2011152979A RU 2011152979 A RU2011152979 A RU 2011152979A
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Брюс Г. ЭЙТКЕН
Джеймс Е. мл. ДИКИНСОН
Тимоти Дж. КИЧЕНСКИ
Мичелл Д. ПИРСОН-СТАЛЛ
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Abstract

1. Стекло, содержащее, вес.%:от 50 до 75 SiO;от 1 до 20 AlO;от 0 до 3 TiO;от 0 до 10 BO;от 8 до 25 всех MO иот 0 до 50 всех RO;где M означает щелочной металл, выбранный из Na, K, Li, Rb и Cs, где стекло содержит, по меньшей мере, 1 вес.% NaO и где R означает щелочноземельный металл, выбранный из Mg, Ca, Ba и Sr.2. Стекло по п.1, содержащее от 0,5 до менее чем 14% RO.3. Стекло по п.1, содержащее от более чем 0 до 10% BO.4. Стекло по п.1, содержащееот 53 до 72% SiO;от 2 до 17% AlO;от 0 до 3% TiO;от 0 до 8% BO;от 8 до 25% всех MO иот 0 до 50% всех RO.5. Стекло по п.1, содержащее:от 55 до 72% SiO;от 2 до 9% AlO;от 0 до 3% TiO;от 0 до 8% BO;от 8 до 20% всех MO иот 0 до 30% всех RO;причем стекло содержит, по меньшей мере, 2 вес.% NaO.6. Стекло по п.1, содержащее:от 1 до 8% NaO;от 5 до 16% KO;от 0 до 8% MgO;от 0 до 7% CaO;от 0 до 7% SrO иот 0 до 21% BaO.7. Стекло по п.1, содержащее:от 2 до 5% NaO;от 8 до 15% KO;от 0 до 5% MgO;от 1 до 6% CaO;от 0 до 6% SrO иот 0 до 12% BaO.8. Стекло по п.1, которое является формуемым в расплаве и имеет температуру деформации 540°С или выше, коэффициент термического расширения 50×10или более, Тменее 1630°С и вязкость ликвидуса 150000 П или более.9. Стекло по п.1, которое имеет форму листа.10. Стекло по п.9, где имеет толщину от 0,5 до 3,0 мм.11. Фотоэлектрическое устройство, включающее стекло по п.1.12. Фотоэлектрическое устройство по п.11, где стекло имеет форму листа и является подложкой или вышележащим слоем.13. Фотоэлектрическое устройство по п.12, включающее функциональный слой, содержащий диселенид меди-индия-галлия или теллурид кадмия, примыкающий к подложке или вышележащему слою.14. Стекло, содержащее, вес.%:от 50 до 75 SiO;от 1 до 20 AlO;от 0 до 3 TiO;от 0 до 4 MgO;от 0 до 10 BO;от 8 до 25 всех MO именее 14% всех RO;где M означает щелочной металл, выбранный из Na, K, Li, Rb и Cs, где стекло содержит, по меньшей мере, 1 вес.% NaO и где R озн�

Claims (15)

1. Стекло, содержащее, вес.%:
от 50 до 75 SiO2;
от 1 до 20 Al2O3;
от 0 до 3 TiO2;
от 0 до 10 B2O3;
от 8 до 25 всех M2O и
от 0 до 50 всех RO;
где M означает щелочной металл, выбранный из Na, K, Li, Rb и Cs, где стекло содержит, по меньшей мере, 1 вес.% Na2O и где R означает щелочноземельный металл, выбранный из Mg, Ca, Ba и Sr.
2. Стекло по п.1, содержащее от 0,5 до менее чем 14% RO.
3. Стекло по п.1, содержащее от более чем 0 до 10% B2O3.
4. Стекло по п.1, содержащее
от 53 до 72% SiO2;
от 2 до 17% Al2O3;
от 0 до 3% TiO2;
от 0 до 8% B2O3;
от 8 до 25% всех M2O и
от 0 до 50% всех RO.
5. Стекло по п.1, содержащее:
от 55 до 72% SiO2;
от 2 до 9% Al2O3;
от 0 до 3% TiO2;
от 0 до 8% B2O3;
от 8 до 20% всех M2O и
от 0 до 30% всех RO;
причем стекло содержит, по меньшей мере, 2 вес.% Na2O.
6. Стекло по п.1, содержащее:
от 1 до 8% Na2O;
от 5 до 16% K2O;
от 0 до 8% MgO;
от 0 до 7% CaO;
от 0 до 7% SrO и
от 0 до 21% BaO.
7. Стекло по п.1, содержащее:
от 2 до 5% Na2O;
от 8 до 15% K2O;
от 0 до 5% MgO;
от 1 до 6% CaO;
от 0 до 6% SrO и
от 0 до 12% BaO.
8. Стекло по п.1, которое является формуемым в расплаве и имеет температуру деформации 540°С или выше, коэффициент термического расширения 50×10-7 или более, Т200 менее 1630°С и вязкость ликвидуса 150000 П или более.
9. Стекло по п.1, которое имеет форму листа.
10. Стекло по п.9, где имеет толщину от 0,5 до 3,0 мм.
11. Фотоэлектрическое устройство, включающее стекло по п.1.
12. Фотоэлектрическое устройство по п.11, где стекло имеет форму листа и является подложкой или вышележащим слоем.
13. Фотоэлектрическое устройство по п.12, включающее функциональный слой, содержащий диселенид меди-индия-галлия или теллурид кадмия, примыкающий к подложке или вышележащему слою.
14. Стекло, содержащее, вес.%:
от 50 до 75 SiO2;
от 1 до 20 Al2O3;
от 0 до 3 TiO2;
от 0 до 4 MgO;
от 0 до 10 B2O3;
от 8 до 25 всех M2O и
менее 14% всех RO;
где M означает щелочной металл, выбранный из Na, K, Li, Rb и Cs, где стекло содержит, по меньшей мере, 1 вес.% Na2O и где R означает щелочноземельный металл, выбранный из Mg, Ca, Ba и Sr, причем стекло является формуемым в расплаве и имеет температуру деформации 540°С или выше, коэффициент термического расширения 50×10-7 или более, Т200 менее 1630°С и вязкость ликвидуса 150000 П или более.
15. Стекло, состоящее, по существу, из, вес.%:
от 50 до 75 SiO2;
от 1 до 20 Al2O3;
от 0 до 3 TiO2;
от 0 до 10 B2O3;
от 8 до 25 всех M2O и
от 0 до 50 всех RO;
где M означает щелочной металл, выбранный из Na, K, Li, Rb и Cs, где стекло содержит, по меньшей мере, 1 вес.% Na2O и где R означает щелочноземельный металл, выбранный из Mg, Ca, Ba и Sr.
RU2011152979/03A 2009-05-29 2010-05-27 Формуемое в расплаве натрийсодержащее стекло RU2011152979A (ru)

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US18238609P 2009-05-29 2009-05-29
US61/182,386 2009-05-29
US12/787,711 US9637408B2 (en) 2009-05-29 2010-05-26 Fusion formable sodium containing glass
US12/787,711 2010-05-26
PCT/US2010/036371 WO2010138698A2 (en) 2009-05-29 2010-05-27 Fusion formable sodium containing glass

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Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7593154B2 (en) * 2005-10-11 2009-09-22 Sage Electrochromics, Inc. Electrochromic devices having improved ion conducting layers
US9637408B2 (en) * 2009-05-29 2017-05-02 Corsam Technologies Llc Fusion formable sodium containing glass
FR2948356B1 (fr) 2009-07-22 2011-08-19 Saint Gobain Dispositif electrochrome
DE102010023366B4 (de) * 2010-06-10 2017-09-21 Schott Ag Verwendung von Gläsern für Photovoltaik-Anwendungen
US8492297B2 (en) * 2010-08-25 2013-07-23 Sage Electrochromics, Inc. Silica soda lime glass composition and use thereof
US10343946B2 (en) 2010-10-26 2019-07-09 Schott Ag Highly refractive thin glasses
US10308545B2 (en) 2010-10-26 2019-06-04 Schott Ag Highly refractive thin glasses
DE102010042945A1 (de) * 2010-10-26 2012-04-26 Schott Ag Transparente Schichtverbunde
FR2972446B1 (fr) * 2011-03-09 2017-11-24 Saint Gobain Substrat pour cellule photovoltaique
JP5661174B2 (ja) * 2011-03-31 2015-01-28 日本板硝子株式会社 化学強化に適したガラス組成物、および化学強化ガラス物品
US8889575B2 (en) * 2011-05-31 2014-11-18 Corning Incorporated Ion exchangeable alkali aluminosilicate glass articles
JP2013110396A (ja) * 2011-10-27 2013-06-06 Nippon Electric Glass Co Ltd 集光型太陽光発電装置用光学素子、その製造方法および集光型太陽光発電装置
TWI459869B (zh) * 2012-04-16 2014-11-01 Ind Tech Res Inst 軟性基板、複合層在太陽能電池之應用、及太陽能電池
JP2014097916A (ja) * 2012-11-16 2014-05-29 Nippon Electric Glass Co Ltd 薄膜太陽電池用ガラス板及びその製造方法
US11352287B2 (en) 2012-11-28 2022-06-07 Vitro Flat Glass Llc High strain point glass
US9701567B2 (en) * 2013-04-29 2017-07-11 Corning Incorporated Photovoltaic module package
US9359244B2 (en) 2013-05-21 2016-06-07 Colorado School Of Mines Alumina-rich glasses and methods for making the same
DE102013109087B3 (de) * 2013-08-22 2015-02-19 Schott Ag Flachglas mit Filterwirkung, Verfahren zu seiner Herstellung, Verwendung sowie Schichtverbund
JPWO2015186486A1 (ja) * 2014-06-04 2017-05-25 旭硝子株式会社 導光板用のガラス板
US11097974B2 (en) 2014-07-31 2021-08-24 Corning Incorporated Thermally strengthened consumer electronic glass and related systems and methods
RU2711424C2 (ru) 2014-12-31 2020-01-17 Корнинг Инкорпорейтед Способы обработки стеклянных изделий
CN107108346B (zh) * 2014-12-31 2020-03-27 康宁股份有限公司 对玻璃制品进行热处理的方法
GB201505091D0 (en) 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
CN105565647A (zh) * 2015-12-14 2016-05-11 厦门博恩思应用材料科技有限公司 一种不完全熔合玻璃组及其制备方法
WO2017123573A2 (en) 2016-01-12 2017-07-20 Corning Incorporated Thin thermally and chemically strengthened glass-based articles
CN105837030B (zh) * 2016-04-06 2019-04-19 东旭科技集团有限公司 一种玻璃用组合物和玻璃及其制备方法和应用
CN110944952A (zh) 2017-03-31 2020-03-31 康宁股份有限公司 高透射玻璃
CN107162407A (zh) * 2017-04-14 2017-09-15 中建材(宜兴)新能源有限公司 一种超薄光伏压延玻璃
KR102395627B1 (ko) * 2017-06-19 2022-05-09 코닝 인코포레이티드 내화 물품, 산화-환원 반응 방지 코팅용 조성물, 및 내화 물품의 제조 방법
CN109721246B (zh) * 2017-10-30 2021-12-07 浙江晶华玻璃有限公司 一种可耐1300摄氏度高温火抛不变形的玻璃瓶及其制备方法
TWI785156B (zh) * 2017-11-30 2022-12-01 美商康寧公司 具有高熱膨脹係數及對於熱回火之優先破裂行為的非離子交換玻璃
WO2019126252A1 (en) 2017-12-19 2019-06-27 Ocv Intellectual Capital, Llc High performance fiberglass composition
CN114514115B (zh) 2019-08-06 2023-09-01 康宁股份有限公司 具有用于阻止裂纹的埋入式应力尖峰的玻璃层压体及其制造方法
KR20220093125A (ko) * 2019-10-29 2022-07-05 코닝 인코포레이티드 라미네이트 구조체를 위한 높은 모듈러스 및 큰 cte 범위를 갖는 유리 조성물
WO2021119750A1 (en) * 2019-12-18 2021-06-24 Macquarie University Aluminosilicate glass
US20230312395A1 (en) * 2020-05-27 2023-10-05 Corning Incorporated Non-iox glasses with high coefficient of thermal expansion and preferential fracture behavior for thermal tempering
WO2023244750A1 (en) * 2022-06-15 2023-12-21 Corning Incorporated Solar devices with borosilicate glass and methods of the same

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1968823A (en) * 1932-09-23 1934-08-07 Gen Electric Gaseous electric discharge lamp device
US4298389A (en) * 1980-02-20 1981-11-03 Corning Glass Works High transmission glasses for solar applications
JPS58204839A (ja) 1982-05-24 1983-11-29 Toshiba Glass Co Ltd 感光性ガラス
US4455383A (en) * 1983-04-04 1984-06-19 Johnson & Johnson Dental Products Company Single-frit glass ceramic
DE3462876D1 (en) 1983-07-11 1987-05-07 Corning Glass Works Glass for cathode ray tube faceplate
JPS62187141A (ja) 1986-02-13 1987-08-15 Nippon Electric Glass Co Ltd 太陽電池カバ−用ガラス
US4734388A (en) * 1986-11-04 1988-03-29 Corning Glass Works Glass for cathode ray tube faceplates
JPH06163955A (ja) * 1992-11-27 1994-06-10 Matsushita Electric Ind Co Ltd 太陽電池用基板及び太陽電池
JP3431279B2 (ja) * 1993-06-08 2003-07-28 旭テクノグラス株式会社 陽極接合に使用する低膨張ガラス
JP3831957B2 (ja) 1994-09-14 2006-10-11 旭硝子株式会社 ガラス組成物及びプラズマディスプレー用基板
US5631195A (en) * 1994-09-14 1997-05-20 Asahi Glass Company Ltd. Glass composition and substrate for plasma display
DE69502806T2 (de) * 1994-10-13 1999-03-04 Saint Gobain Vitrage Substrat aus verstärktem glas
JP3666609B2 (ja) * 1995-06-26 2005-06-29 日本電気硝子株式会社 電灯用ガラス組成物
GB9525111D0 (en) * 1995-12-08 1996-02-07 Pilkington Plc Glass and glass products
JP3804115B2 (ja) 1996-01-24 2006-08-02 旭硝子株式会社 ガラス基板
JP4169013B2 (ja) 1996-03-14 2008-10-22 旭硝子株式会社 基板用ガラス組成物
DE69700417T2 (de) * 1996-03-14 2000-05-04 Asahi Glass Co Ltd Glaszusammensetzung für ein Substrat
JP3804159B2 (ja) * 1996-03-15 2006-08-02 旭硝子株式会社 ガラス基板およびpdp用ガラス基板
US5908794A (en) * 1996-03-15 1999-06-01 Asahi Glass Company Ltd. Glass composition for a substrate
EP0853345B1 (en) 1996-05-28 2004-02-18 Matsushita Battery Industrial Co Ltd METHOD FOR FORMING CdTe FILM
JP3867816B2 (ja) * 1996-07-12 2007-01-17 日本電気硝子株式会社 基板用ガラス
JPH10152339A (ja) * 1996-09-27 1998-06-09 Nippon Sheet Glass Co Ltd 耐熱性ガラス組成物
JP3957348B2 (ja) * 1996-11-21 2007-08-15 日本板硝子株式会社 防火用板ガラス
KR100238117B1 (ko) * 1996-12-05 2000-01-15 박영구 프라즈마 영상표시판넬용 기판유리조성물
US6060168A (en) * 1996-12-17 2000-05-09 Corning Incorporated Glasses for display panels and photovoltaic devices
FR2758550B1 (fr) * 1997-01-17 1999-02-12 Saint Gobain Vitrage Compositions de verre silico-sodo-calcique et leurs applications
DE19721738C1 (de) * 1997-05-24 1998-11-05 Schott Glas Aluminosilicatglas für flache Anzeigevorrichtungen und Verwendungen
JPH11135819A (ja) 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd 化合物薄膜太陽電池
JPH11180728A (ja) 1997-12-22 1999-07-06 Central Glass Co Ltd ディスプレイ装置用基板ガラス組成物
JPH11180727A (ja) 1997-12-22 1999-07-06 Central Glass Co Ltd 表示装置用基板ガラス組成物
JPH11310433A (ja) 1998-04-27 1999-11-09 Central Glass Co Ltd 表示装置用基板ガラス
JPH11335133A (ja) 1998-05-27 1999-12-07 Central Glass Co Ltd 表示装置用基板ガラス
TW565539B (en) * 1998-08-11 2003-12-11 Asahi Glass Co Ltd Glass for a substrate
JP3465642B2 (ja) 1998-09-04 2003-11-10 日本板硝子株式会社 淡色高透過ガラスおよびその製造方法
US6017838A (en) * 1998-09-10 2000-01-25 Osram Sylvania Inc. Lead free soft glass having high electrical resistivity
JP2000128572A (ja) 1998-10-26 2000-05-09 Nippon Electric Glass Co Ltd 硼珪酸ガラス及びその製造方法
US6319867B1 (en) * 1998-11-30 2001-11-20 Corning Incorporated Glasses for flat panel displays
JP2000203871A (ja) * 1999-01-18 2000-07-25 Nippon Electric Glass Co Ltd 照明用ガラス、照明用着色ガラスバルブの製造方法及び照明用着色ガラスバルブ
US6207603B1 (en) * 1999-02-05 2001-03-27 Corning Incorporated Solar cell cover glass
DE19936699C2 (de) * 1999-08-04 2001-10-31 Nachtmann F X Bleikristall Blei- und bariumfreies Kristallglas
DE19942259C1 (de) * 1999-09-04 2001-05-17 Schott Glas Erdalkalialuminoborosilicatglas und dessen Verwendungen
DE10194790T1 (de) 2000-01-05 2003-12-04 Schott Glass Tech Inc Erdalkalifreies Boralkalisilikatglas
DE10005088C1 (de) 2000-02-04 2001-03-15 Schott Glas Alkalihaltiges Aluminoborosilicatglas und seine Verwendung
JP2002025762A (ja) 2000-07-04 2002-01-25 Nippon Electric Glass Co Ltd 無機elディスプレイガラス基板
JP2002053340A (ja) 2000-08-09 2002-02-19 Nippon Electric Glass Co Ltd 無機elディスプレイガラス基板
WO2002049620A2 (en) * 2000-12-21 2002-06-27 Inhale Therapeutic Systems, Inc. Induced phase transition method for the production of microparticles containing hydrophobic active agents
JP5088914B2 (ja) * 2001-06-28 2012-12-05 日本電気硝子株式会社 半導体封入用ガラス及び半導体封入用外套管
JP2003040643A (ja) * 2001-07-26 2003-02-13 Asahi Techno Glass Corp 照明用ガラス組成物
DE10141666A1 (de) 2001-08-25 2003-03-13 Schott Glas Zinkhaltiges Alkalialuminosilicatglas und seine Verwendungen
US6753279B2 (en) * 2001-10-30 2004-06-22 Corning Incorporated Glass composition for display panels
JP2003261352A (ja) 2002-03-08 2003-09-16 Asahi Techno Glass Corp ディスプレイ用ガラスおよびディスプレイ用ガラス部品
US6992030B2 (en) * 2002-08-29 2006-01-31 Corning Incorporated Low-density glass for flat panel display substrates
JP2004131314A (ja) 2002-10-09 2004-04-30 Asahi Glass Co Ltd 透明導電膜付き化学強化ガラス基板、およびその製造方法
JP4320772B2 (ja) 2003-02-13 2009-08-26 日本電気硝子株式会社 フラットパネルディスプレイ装置用ガラス基板
JP4371841B2 (ja) * 2004-02-09 2009-11-25 Hoya株式会社 半導体パッケージ用窓材ガラス
US7470999B2 (en) * 2004-09-29 2008-12-30 Nippon Electric Glass Co., Ltd. Glass for semiconductor encapsulation and outer tube for semiconductor encapsulation, and semiconductor electronic parts
JP4716245B2 (ja) 2004-11-11 2011-07-06 日本電気硝子株式会社 ガラス基板及びその製造方法
JP2007123507A (ja) * 2005-10-27 2007-05-17 Kyocera Corp セラミック多層配線基板の製造方法
US8007913B2 (en) * 2006-02-10 2011-08-30 Corning Incorporated Laminated glass articles and methods of making thereof
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
CN101454252A (zh) * 2006-05-25 2009-06-10 日本电气硝子株式会社 强化玻璃及其制造方法
JP2008280189A (ja) 2007-05-08 2008-11-20 Nippon Electric Glass Co Ltd 太陽電池用ガラス基板およびその製造方法
WO2008149858A1 (ja) 2007-06-07 2008-12-11 Nippon Electric Glass Co., Ltd. 強化ガラス基板及びその製造方法
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
JP5467490B2 (ja) * 2007-08-03 2014-04-09 日本電気硝子株式会社 強化ガラス基板の製造方法及び強化ガラス基板
JP5743125B2 (ja) 2007-09-27 2015-07-01 日本電気硝子株式会社 強化ガラス及び強化ガラス基板
EP2299536A4 (en) 2008-06-17 2011-12-21 Nippon Electric Glass Co SUBSTRATE FOR SOLAR CELL AND OXIDE SEMICONDUCTOR ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL
TWI387468B (zh) 2008-06-26 2013-03-01 Nan Hui Yeh 生醫玻璃陶瓷材料之製造方法
JP5867953B2 (ja) * 2008-06-27 2016-02-24 日本電気硝子株式会社 強化ガラスおよび強化用ガラス
CN101428966A (zh) 2008-12-05 2009-05-13 北京工业大学 适用于电光源的硼硅玻璃
US9637408B2 (en) * 2009-05-29 2017-05-02 Corsam Technologies Llc Fusion formable sodium containing glass

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