JP6044772B2 - 保護膜付きガラス基材 - Google Patents
保護膜付きガラス基材 Download PDFInfo
- Publication number
- JP6044772B2 JP6044772B2 JP2013006855A JP2013006855A JP6044772B2 JP 6044772 B2 JP6044772 B2 JP 6044772B2 JP 2013006855 A JP2013006855 A JP 2013006855A JP 2013006855 A JP2013006855 A JP 2013006855A JP 6044772 B2 JP6044772 B2 JP 6044772B2
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- protective film
- concentration
- sodium
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011521 glass Substances 0.000 title claims description 92
- 239000000758 substrate Substances 0.000 title claims description 74
- 230000001681 protective effect Effects 0.000 title claims description 40
- 239000011734 sodium Substances 0.000 claims description 54
- 229910052708 sodium Inorganic materials 0.000 claims description 49
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 43
- 239000000203 mixture Substances 0.000 claims description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 23
- 150000001875 compounds Chemical class 0.000 description 20
- 238000000034 method Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 10
- 150000001342 alkaline earth metals Chemical class 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 7
- 238000010248 power generation Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- -1 alkaline earth metal sulfate Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000006124 Pilkington process Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001336 glow discharge atomic emission spectroscopy Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052936 alkali metal sulfate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003280 down draw process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
Description
SiO2:45〜65%
Al2O3:1〜20%
Li2O:0〜5%
Na2O:1〜10%
K2O:0〜15%
R’2O(R’はLi、Na及びKから選択される少なくとも1種):7〜20%
MgO:0〜12%
CaO:0〜12%
SrO:0〜18%
BaO:0〜18%
RO(RはMg、Ca、Sr及びBaから選択される少なくとも1種):10〜27%
ZrO2:0〜10%
下記のガラス組成となるように原料粉末を調合した。
SiO2:56%
Al2O3:7%
Na2O:4%
K2O:7%
MgO:2%
CaO:2%
SrO:9%
BaO:9%
ZrO2:4%
SiO2:51%
Al2O3:13%
Na2O:6%
K2O:4%
CaO:5%
SrO:12%
BaO:4%
ZrO2:5%
上記組成を有するガラス基板(30mm×30mm×1.4mm)を結晶化ガラス製セッター上に載置し、表1に記載のSO2ガス濃度及び温度に設定した管状電気炉内に15分間(実施例2〜7、比較例1)または2分間(比較例2)保持することにより、ガラス基板表面に保護膜を形成した。その後、炉内のガスを空気と置換して室温まで冷却し、試料(保護膜付きガラス基板)を得た。
Claims (5)
- ガラス基材表面に、硫酸塩を含有する保護膜が形成されてなる保護膜付きガラス基材であって、保護膜中のナトリウム濃度に対する、マグネシウム、カルシウム、ストロンチウム及びバリウムの合量濃度の比が0.13以上であり、ガラス基材の表面から深さ10〜40nmにおける平均ナトリウム濃度が、深さ4000nmにおけるナトリウム濃度に対して、相対値で0.3以上であることを特徴とする保護膜付きガラス基材。
- ガラス基材の表面から深さ10〜40nmにおける平均ナトリウム濃度が、深さ4000nmにおけるナトリウム濃度に対して、相対値で0.42以上であることを特徴とする請求項1に記載の保護膜付きガラス基材。
- ガラス基材の歪点が520℃以上であることを特徴とする請求項1または2に記載の保護膜付きガラス基材。
- ガラス基材の歪点が580℃以上であることを特徴とする請求項1〜3のいずれかに記載の保護膜付きガラス基材。
- ガラス基材の組成(ガラス基材全体の平均組成)として、質量%で、SiO 2 :45〜65%、Al 2 O 3 :1〜20%、Li 2 O:0〜5%、Na 2 O:1〜10%、K 2 O:0〜15%、R’ 2 O(R’はLi、Na及びKから選択される少なくとも1種):7〜20%、MgO:0〜12%、CaO:0〜12%、SrO:0〜18%、BaO:0〜18%、RO(RはMg、Ca、Sr及びBaから選択される少なくとも1種):10〜27%、ZrO 2 :0〜10%であることを特徴とする請求項1〜4のいずれかに記載の保護膜付きガラス基材。
Priority Applications (1)
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---|---|---|---|
JP2013006855A JP6044772B2 (ja) | 2013-01-18 | 2013-01-18 | 保護膜付きガラス基材 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013006855A JP6044772B2 (ja) | 2013-01-18 | 2013-01-18 | 保護膜付きガラス基材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014136667A JP2014136667A (ja) | 2014-07-28 |
JP6044772B2 true JP6044772B2 (ja) | 2016-12-14 |
Family
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JP2013006855A Expired - Fee Related JP6044772B2 (ja) | 2013-01-18 | 2013-01-18 | 保護膜付きガラス基材 |
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JP (1) | JP6044772B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107835793B (zh) * | 2015-07-14 | 2020-08-11 | Agc株式会社 | 玻璃基板 |
CN114929640B (zh) * | 2020-01-20 | 2024-03-08 | Agc株式会社 | 带有硫酸盐的锂硅酸盐玻璃板、锂硅酸盐玻璃板及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000072457A (ja) * | 1998-09-02 | 2000-03-07 | Central Glass Co Ltd | フロート板ガラスの形成方法および形成装置 |
WO2011068225A1 (ja) * | 2009-12-04 | 2011-06-09 | 旭硝子株式会社 | ガラス板およびその製造方法 |
KR20130100244A (ko) * | 2010-07-26 | 2013-09-10 | 아사히 가라스 가부시키가이샤 | Cu-In-Ga-Se 태양 전지용 유리 기판 및 그것을 사용한 태양 전지 |
KR20140127805A (ko) * | 2012-01-25 | 2014-11-04 | 아사히 가라스 가부시키가이샤 | Cu―In―Ga―Se 태양 전지용 유리 기판 및 그것을 사용한 태양 전지 |
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- 2013-01-18 JP JP2013006855A patent/JP6044772B2/ja not_active Expired - Fee Related
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JP2014136667A (ja) | 2014-07-28 |
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