MX2011012667A - Vidrio que contiene sodio formable por fusion. - Google Patents
Vidrio que contiene sodio formable por fusion.Info
- Publication number
- MX2011012667A MX2011012667A MX2011012667A MX2011012667A MX2011012667A MX 2011012667 A MX2011012667 A MX 2011012667A MX 2011012667 A MX2011012667 A MX 2011012667A MX 2011012667 A MX2011012667 A MX 2011012667A MX 2011012667 A MX2011012667 A MX 2011012667A
- Authority
- MX
- Mexico
- Prior art keywords
- containing glass
- glasses
- photovoltaic devices
- sodium containing
- fusion formable
- Prior art date
Links
- 239000011521 glass Substances 0.000 title abstract 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 title abstract 2
- 229910052708 sodium Inorganic materials 0.000 title abstract 2
- 239000011734 sodium Substances 0.000 title abstract 2
- 230000004927 fusion Effects 0.000 title 1
- 229910000323 aluminium silicate Inorganic materials 0.000 abstract 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 abstract 1
- 238000007499 fusion processing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Se describen vidrios de aluminosilicato y boroaluminosilicato que contienen sodio; los vidrios se pueden usar como substratos para dispositivos fotovoltaicos, por ejemplo, dispositivos fotovoltaicos de película delgada tales como los dispositivos fotovoltaicos de CIGS; estos vidrios se pueden caracterizar porque tienen un punto de deformación = 540 °C, coeficiente de expansión térmica de 6.5 ppm/°C a 9.5 ppm/°C y viscosidad de líquido mayor de 50,000 Poise; por lo tanto son ideales para ser formados en forma de lámina mediante el procedimiento de fusión.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18238609P | 2009-05-29 | 2009-05-29 | |
US12/787,711 US9637408B2 (en) | 2009-05-29 | 2010-05-26 | Fusion formable sodium containing glass |
PCT/US2010/036371 WO2010138698A2 (en) | 2009-05-29 | 2010-05-27 | Fusion formable sodium containing glass |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2011012667A true MX2011012667A (es) | 2011-12-16 |
Family
ID=43218847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2011012667A MX2011012667A (es) | 2009-05-29 | 2010-05-27 | Vidrio que contiene sodio formable por fusion. |
Country Status (12)
Country | Link |
---|---|
US (2) | US9637408B2 (es) |
EP (1) | EP2445845A2 (es) |
JP (4) | JP2012528071A (es) |
KR (3) | KR20120026577A (es) |
CN (2) | CN109264990A (es) |
AU (1) | AU2010253992A1 (es) |
CA (1) | CA2762873A1 (es) |
MX (1) | MX2011012667A (es) |
RU (1) | RU2011152979A (es) |
SG (1) | SG176267A1 (es) |
TW (1) | TWI565674B (es) |
WO (1) | WO2010138698A2 (es) |
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US7593154B2 (en) * | 2005-10-11 | 2009-09-22 | Sage Electrochromics, Inc. | Electrochromic devices having improved ion conducting layers |
US9637408B2 (en) * | 2009-05-29 | 2017-05-02 | Corsam Technologies Llc | Fusion formable sodium containing glass |
FR2948356B1 (fr) | 2009-07-22 | 2011-08-19 | Saint Gobain | Dispositif electrochrome |
DE102010023366B4 (de) * | 2010-06-10 | 2017-09-21 | Schott Ag | Verwendung von Gläsern für Photovoltaik-Anwendungen |
US8492297B2 (en) * | 2010-08-25 | 2013-07-23 | Sage Electrochromics, Inc. | Silica soda lime glass composition and use thereof |
DE102010042945A1 (de) * | 2010-10-26 | 2012-04-26 | Schott Ag | Transparente Schichtverbunde |
US10343946B2 (en) | 2010-10-26 | 2019-07-09 | Schott Ag | Highly refractive thin glasses |
US10308545B2 (en) | 2010-10-26 | 2019-06-04 | Schott Ag | Highly refractive thin glasses |
FR2972446B1 (fr) | 2011-03-09 | 2017-11-24 | Saint Gobain | Substrat pour cellule photovoltaique |
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US8889575B2 (en) * | 2011-05-31 | 2014-11-18 | Corning Incorporated | Ion exchangeable alkali aluminosilicate glass articles |
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-
2010
- 2010-05-26 US US12/787,711 patent/US9637408B2/en active Active
- 2010-05-27 KR KR1020117031367A patent/KR20120026577A/ko active Search and Examination
- 2010-05-27 CN CN201811267665.3A patent/CN109264990A/zh active Pending
- 2010-05-27 MX MX2011012667A patent/MX2011012667A/es not_active Application Discontinuation
- 2010-05-27 AU AU2010253992A patent/AU2010253992A1/en not_active Abandoned
- 2010-05-27 SG SG2011087749A patent/SG176267A1/en unknown
- 2010-05-27 TW TW099117093A patent/TWI565674B/zh not_active IP Right Cessation
- 2010-05-27 CA CA2762873A patent/CA2762873A1/en not_active Abandoned
- 2010-05-27 KR KR1020177024071A patent/KR101914400B1/ko active IP Right Grant
- 2010-05-27 CN CN2010800292476A patent/CN102574726A/zh active Pending
- 2010-05-27 KR KR1020187030955A patent/KR20180120783A/ko active Search and Examination
- 2010-05-27 WO PCT/US2010/036371 patent/WO2010138698A2/en active Application Filing
- 2010-05-27 EP EP10722264A patent/EP2445845A2/en not_active Withdrawn
- 2010-05-27 JP JP2012513249A patent/JP2012528071A/ja active Pending
- 2010-05-27 RU RU2011152979/03A patent/RU2011152979A/ru unknown
-
2015
- 2015-04-09 JP JP2015079829A patent/JP2015171994A/ja active Pending
-
2017
- 2017-03-15 JP JP2017049555A patent/JP2017114762A/ja active Pending
- 2017-04-06 US US15/480,463 patent/US20170250296A1/en not_active Abandoned
-
2018
- 2018-09-28 JP JP2018184198A patent/JP2019006677A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20170102565A (ko) | 2017-09-11 |
WO2010138698A3 (en) | 2011-01-20 |
CN102574726A (zh) | 2012-07-11 |
CN109264990A (zh) | 2019-01-25 |
JP2019006677A (ja) | 2019-01-17 |
KR20120026577A (ko) | 2012-03-19 |
KR20180120783A (ko) | 2018-11-06 |
AU2010253992A1 (en) | 2012-02-02 |
US20170250296A1 (en) | 2017-08-31 |
US20100300535A1 (en) | 2010-12-02 |
WO2010138698A2 (en) | 2010-12-02 |
RU2011152979A (ru) | 2013-07-10 |
TW201111317A (en) | 2011-04-01 |
JP2012528071A (ja) | 2012-11-12 |
JP2015171994A (ja) | 2015-10-01 |
JP2017114762A (ja) | 2017-06-29 |
CA2762873A1 (en) | 2010-12-02 |
TWI565674B (zh) | 2017-01-11 |
US9637408B2 (en) | 2017-05-02 |
SG176267A1 (en) | 2012-01-30 |
KR101914400B1 (ko) | 2018-11-01 |
EP2445845A2 (en) | 2012-05-02 |
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