TWI534115B - 融合可形成矽石及含鈉玻璃 - Google Patents
融合可形成矽石及含鈉玻璃 Download PDFInfo
- Publication number
- TWI534115B TWI534115B TW099124063A TW99124063A TWI534115B TW I534115 B TWI534115 B TW I534115B TW 099124063 A TW099124063 A TW 099124063A TW 99124063 A TW99124063 A TW 99124063A TW I534115 B TWI534115 B TW I534115B
- Authority
- TW
- Taiwan
- Prior art keywords
- glass
- weight
- photovoltaic device
- less
- glass comprises
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims description 249
- 229910052708 sodium Inorganic materials 0.000 title claims description 41
- 239000011734 sodium Substances 0.000 title description 67
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 title description 17
- 230000004927 fusion Effects 0.000 title description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 239000000377 silicon dioxide Substances 0.000 title 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 39
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 36
- 229910052783 alkali metal Inorganic materials 0.000 claims description 31
- 150000001340 alkali metals Chemical class 0.000 claims description 30
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 25
- 150000001342 alkaline earth metals Chemical group 0.000 claims description 25
- 229910052792 caesium Inorganic materials 0.000 claims description 24
- 229910052791 calcium Inorganic materials 0.000 claims description 23
- 229910052788 barium Inorganic materials 0.000 claims description 22
- 229910052749 magnesium Inorganic materials 0.000 claims description 22
- 229910052700 potassium Inorganic materials 0.000 claims description 22
- 229910052712 strontium Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 8
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 229910001413 alkali metal ion Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 4
- 235000011941 Tilia x europaea Nutrition 0.000 description 4
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 4
- 238000003286 fusion draw glass process Methods 0.000 description 4
- 239000004571 lime Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000006060 molten glass Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000003280 down draw process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 229910000503 Na-aluminosilicate Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- -1 alkali metal cation Chemical class 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910052661 anorthite Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- GWWPLLOVYSCJIO-UHFFFAOYSA-N dialuminum;calcium;disilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] GWWPLLOVYSCJIO-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000429 sodium aluminium silicate Substances 0.000 description 1
- 235000012217 sodium aluminium silicate Nutrition 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Description
本發明一般係關於含鈉玻璃以及特別是關於融合可成形矽石以及含鈉玻璃,其能夠使用於光致變色、電致變色、有機發光二極體(OLED)或光伏打應用,例如薄膜光伏打元件。
目前由薄膜光伏打元件所提供較高效率之優點已產生相當程度嘗試發展新的玻璃基板以及蓋板特別設計滿足該新市場的需求。薄膜光伏打製造處理過程通常要求基板能夠在延長時間下高溫處理而不會翹曲,製造出玻璃特別適合作為這些應用。除此,一些薄膜光伏打處理過程(例如CIGS)需要鈉由玻璃擴散至沉積層,製造出含鈉玻璃適合作為特別應用。
現存玻璃(例如石灰或顯示器組成份)在該領域已使用而呈現出非常高效率但是使用任何其他設計應用玻璃存在不良問題。例如石灰蘇打玻璃提供便宜立即可利用含鈉基板,但是其低應變點嚴重地抑制其使用於較高溫度處理過程,其能夠使薄膜光伏打處理過程達到其最高效率。
使用設計作為顯示應用之玻璃提供高應變點,但是
這些玻璃熱膨脹係數(CTE)通常太低無法可靠性製造大的薄膜光伏打板,此由於與光伏打薄膜熱膨脹係數不相匹配。除此,許多設計作為顯示器應用之玻璃刻意地不含鹼金屬,使其較不使用作為這些薄膜光伏打應用,其需要鈉由玻璃擴散。
在一些薄膜光伏打應用中,具有高應變點以及高熱膨脹係數含鈉玻璃片為有益的。除此,具有高應變點以及高熱膨脹係數含鈉玻璃片為有益的,該玻璃為融合可成形而允許處理具有最佳表面特性之平坦片狀物。
使用作為薄膜光伏打應用之融合可成形高應變點含鈉鋁矽酸鹽以及硼鋁矽酸鹽玻璃組成份範圍在此加以說明。更明確地說,這些玻璃有用的材料可使用在銅銦鎵二硒化物(CIGS)光伏打模組這種需要來自基板玻璃之鈉以最佳化電池效能。目前的CIGS模組基板一般是由以浮式處理製成的蘇打石灰玻璃片所製成。然而,使用較高應變點的玻璃基板可能使CIGS處理的溫度更高,期望能轉化成電池效能所需的改善。更者,熔融成形玻璃片較平滑的表面可能產生額外的好處,譬如改善的膜黏滯性係數等。
據此,這裡描述的含鈉玻璃片特徵是應變點≧540℃,例如≧570℃,針對蘇打石灰玻璃提供好處,和/或液相線黏滯性係數≧50,000泊,使其得以經由熔融處理製造,例如液相線黏滯係數為130,000泊或更高。為了避免基板和CIGS層之間的熱膨脹不匹配,依據一些實施例,本發明玻璃進一步的特徵是範圍從8到9ppm/℃的熱膨脹係數。
一項實施例為玻璃組成份,以%重量比表示包含:50-72% SiO2,大於15-20% Al2O3,0-10% B2O3,10-25%總M2O,以及大於0-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;以及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
另一項實施例為玻璃組成份,以%重量比表示包含250-72% SiO2,1-20% Al2O3,0-10% B2O3,10-25%總M2O,以及0.5至小於14%重量比RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;以及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
另一項實施例為包含玻璃之光伏打裝置,該玻璃以%重量比表示包含250-72% SiO2,10-25% Al2O3,0-10% B2O3,10-25%總M2O,以及大於0-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;以及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
本發明其他特性及優點揭示於下列說明,以及部份可由說明清楚瞭解,或藉由實施下列說明以及申請專利範圍以及附圖而明瞭。
人們瞭解先前一般說明及下列詳細說明只作為範例性及說明性,以及預期提供概要或架構以瞭解申請專利範圍界定出本發明原理及特性。
所包含附圖在於更進一步瞭解本發明,以及在此加入作為參考之用。附圖顯示出本發明不同的實施例,以及隨
同說明書作為說明本發明之原理及操作。
100‧‧‧光伏打裝置
10‧‧‧玻璃片
12‧‧‧導電性材料
14‧‧‧障壁層
16‧‧‧主動光伏打介質
本發明能夠由下列詳細說明單獨地或隨同附圖了解本發明。
圖1顯示出依據本發明光伏打裝置之特性。
如這裡使用的,可根據光伏打電池設計,使用"基板"一詞來描述基板或蓋板(superstrate)。例如,假使組合成光伏打電池時,基板是蓋板,在光伏打電池的光線入射側面。蓋板可以提供保護光伏打的材料免於撞擊和環境的剝蝕,一方面允許太陽光譜的適當波長傳輸。更者,可將多個光伏打電池安排成一個光伏打模組。光伏打裝置可被描述成一個電池,一個模組,或兩者。
如這裡使用的,"靠近"一詞可以定義成非常接近。靠近的結構可以是或可不是彼此互相實體接觸。靠近的結構可以在其中間有其他的層和/或結構。
一項實施例為玻璃,以%重量比表示包含:50-72% SiO2,大於15-20% Al2O3,0-10% B2O3,10-25%總M2O,以及大於0-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;以及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
另一項實施例為玻璃,以%重量比表示包含:50-72% SiO2,1-20% Al2O3,0-10% B2O3,10-25%總M2O,以及0.5
至小於14%RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;以及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
另一項實施例為包含玻璃之光伏打裝置,該裝置包含玻璃以%重量比表示包含:50-72%SiO2,10-25% Al2O3,0-10% B2O3,10-25%總M2O,以及大於0-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;以及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一項實施例中,光伏打裝置包含玻璃,該玻璃以%重量比表示實質上包含:50-72%SiO2,10-25% Al2O3,0-10% B2O3,10-25%總M2O,以及大於0-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
光伏打裝置能夠包含任何所揭示玻璃之所說明實施例。玻璃能夠為片狀物形式以及為光伏打裝置之基板或蓋板或兩者。
在另一實施例中,玻璃以%重量比表示包含:50-72% SiO2,10-25% Al2O3,0-10% B2O3,10-25%總M2O,以及大於0-25%總RO,其中M為鹼金屬選自於Na、Li、Rb以及Cs以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比實質上包
含:50-72% SiO2,10-25% Al2O3,0-10% B2O3,10-25%總M2O,以及大於0-25%總RO,其中M為鹼金屬選自於Na、Li、Rb以及Cs,以及其中玻璃實質上並不包含K2O以及其中包含9-17%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比包含:50-59% SiO2,10-25% Al2O3,0-10wB2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比包含:54-59% SiO2,10-21wAl2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
依據另一實施例,玻璃以%重量比包含:54-59% SiO2,17-21% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
依據另一實施例,玻璃以%重量比包含:52-59% SiO2,20-25% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬
選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比包含:54-59% SiO2,17-21% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比包含:56-58% SiO2,17-21% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比實質上包含:50-59% SiO2,10-25% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比實質上包含:52-59% SiO2,20-25% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在另一實施例中,玻璃以%重量比實質上包含:56-58% SiO2,17-21% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb
以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
在一項實施例中,玻璃以%重量比實質上包含:54-59% SiO2,10-21% Al2O3,0-10% B2O3,10-25%總M2O,以及2-25%總RO,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs,以及其中玻璃包含至少9%重量比Na2O;及其中R為鹼土金屬選自於Mg、Ca、Ba以及Sr。
依據一項實施例,玻璃包含51-72%重量比SiO2,例如51-72%重量比SiO2,例如52-72%重量比SiO2,例如53-72%重量比SiO2,例如53-72%重量比SiO2,例如54-72%重量比SiO2,例如55-72%重量比SiO2,例如56-72%重量比SiO2,例如57-72%重量比SiO2,例如58-72%重量比SiO2,例如59-72%重量比SiO2,例如60-72%重量比SiO2。在一項實施例中,玻璃包含55-72%重量比SiO2以及包含大於15-25%重量比Al2O3。
在一項實施例中,玻璃為可滾壓的。在一項實施例中,玻璃為向下可抽拉。玻璃能夠為細縫抽拉或融合抽拉。依據另一項實施例,玻璃能夠浮式形成。
依據一項實施例,玻璃包含小於8%重量比K2O,例如小於7%重量比K2O,例如小於6%重量比K2O,例如小於5%重量比K2O,例如小於4%重量比K2O,例如小於3%重量比K2O。依據一些實施例,玻璃實質上並不包含K2O,例如實質上無K2O。
依據一項實施例,玻璃包含小於4%重量比K2O,以
及玻璃具有應變點為535℃或更高,熱.膨脹係數為50x10-7或更高,以及具有液相線黏滯性係數為130000泊或更大,例如150000泊或更大。在一項實施例中,具有這些特性玻璃為融合可成形。
依據一項實施例,玻璃包含小於4%重量比K2O以及小於2.5% MgO。在一項實施例中,玻璃包含小於4%重量比K2O以及小於2.5%重量比MgO以及具有應變點為535℃或更高,熱膨脹係數為50x10-7或更大,以及液相線黏滯性係數為130000泊或更大,例如150000泊或更大。在一項實施例中,具有這些特性玻璃為融合可成形。
所揭示玻璃之一些實施例具有高Na2O含量之優點為使其能夠在光伏打電池過程中傳送更多Na至沉積CIGS層-其因而預期導致較高CIGS電池效率。最終,由於在CIGS沉積/結晶過程中Na向外擴散可能藉由存在另一種鹼金屬而受阻礙,一些範例不含K或實質上減小K2O含量情況可提供另一優點。
玻璃能夠更進一步包含3%重量比或較小,例如0-3%重量比,例如大於0-3%重量比,例如1-3%重量比TiO2、MnO、ZnO、Nb2O5、MoO3、Ta2O5、WO3、ZrO2、Y2O3、La2O3、HfO2、CdO、SnO2、Fe2O3、CeO2、As2O3、Sb2O3、Cl、Br或其組合。在一項實施例中,玻璃包含3%重量比TiO2或ZrO2或較小,例如0-3%重量比,例如大於0-3%重量比,例如1-3%重量比。
如上述所提及,依據一些實施例,玻璃包含0-10%重量比,例如1-8%重量比,例如大於0-10%重量比B2O3,例
如0.5-10%重量比B2O3,例如1-10%重量比B2O3。相對於不含B2O3玻璃,加入B2O3至玻璃以降低熔融溫度,降低液相線溫度以提高液相線黏滯性係數,以及改善機械性耐久性。在一項實施例中,玻璃實質上不含B2O3。
依據一項實施例,玻璃包含大於0-25%重量比RO,例如0.5-25% RO,例如1-25% RO,其中R為鹼土金屬。依據一項實施例,玻璃包含小於14%重量比RO,例如13%或較小,例如12%或較小,例如11%或較小,例如10%或較小,例如9%或較小,例如8%或較小。在一項實施例中,玻璃包含0.5-小於14% RO,例如0.5-13% RO。依據一項實施例,玻璃包含大於0-25%重量比RO,其中R為鹼土金屬。
依據一項實施例,玻璃包含0.5%至小於14%重量比RO,以及具有應變點為535℃或更高,熱膨脹係數為50x10-7或更大,以及液相線黏滯性係數為130000泊或更大,例如150000泊或更大。在一項實施例中,具有這些特性玻璃為融合可成形。
依據一些實施例,玻璃包含至小於4.0%重量比MgO,例如小於3.0%重量比MgO,例如小於2.5%重量比MgO,例如小於2.0%重量比MgO。玻璃能夠包含例如0-4%重量比MgO,例如大於0-4%重量比MgO,例如大於0-3%重量比MgO,例如大於0-2.5%重量比MgO,例如0.2-4%重量比MgO,例如0.2-3%重量比MgO,例如0.2-2.5%重量比MgO。依據另一項實施例,玻璃包含例如1-3%重量比MgO。MgO能夠加入至玻璃以減小熔融溫度以及提高應變點。相對於其
他鹼土金屬(例如CaO、SrO、BaO),MgO較為不利於降低熱膨脹係數,以及能夠作其他調整以保持熱膨脹係數在所需要範圍內。適當調整範例包含增加SrO而減少CaO,增加鹼金屬氧化物濃度,以及以較大鹼金屬氧化物(例如K2O)部份地替代較小鹼金屬氧化物(例如Na2O)。
依據一項實施例,玻璃包含小於2.5%重量比MgO,以及玻璃應變點為535℃或更高,熱膨脹係數為50x10-7或更大,以及液相線黏滯性係數為130000泊或更大,例如150000泊或更大。在一項實施例中,具有這些特性玻璃為融合可成形。
依據另一項實施例,玻璃實質上不含BaO。例如,BaO含量能夠為0.05%重量比或較小,例如0%重量比。
在一些實施例中,玻璃實質上不含Sb2O3、As2O3或其組合,例如玻璃包含0.05%重量比或較小Sb2O3或As2O3或其組合。例如玻璃能夠包含0%重量比Sb2O3或As2O3或其組合。
在一些實施例中,玻璃包含2-4%重量比CaO。相對於鹼金屬或SrO,CaO將造成較高應變點,較低密度,以及較低熔融溫度。CaO為特定可能析晶相特別是鈣長石(CaAl2Si2O8)之成份,以及該相與類似鈉相納長石具有完全固態溶體。單獨採用高Na及Ca含量會導致液相線溫度為很高而無法接受。不過,CaO化學成份來源包含石灰,為非常便宜材料,相當程度大體積及低價格為考慮因素,相對於其他鹼土氧化物,其通常有用於使CaO含量高到能夠合理地達成。
在一些實施例中,玻璃能夠包含0.2-4%重量比SrO,例如0.5-4%重量比,例如1-4%重量比,例如2-4%重量比之SrO。在特定實施例中,玻璃刻意地並不包含批料SrO,雖然其可能存在於其他披料中為污染物。SrO產生較高熱膨脹係數,以及SrO及CaO相對比例能夠操作來改善液相線溫度,以及液相線黏滯係數。SrO並不比CaO或MgO有效於改善應變點,以及以SrO替代其任一種將傾向促使熔融溫度提高。
如先前所提及,依據一些實施例,玻璃包含10-25% M2O,其中M為鹼金屬選自於Na、K、Li、Rb以及Cs。鹼金屬陽離子將陡峻地提高熱膨脹係數,然而降低應變點,以及決定於其如何加入,提高熔融溫度。對熱膨脹係數產生最小作用鹼金屬氧化物為Li2O,以及最大作用為Cs2O。如先前所提及,鈉能夠參與本發明玻璃一種析晶相,以及同時能夠使用其他成份調整以抵消例如CaO/(CaO+SrO)比值變化,其傾向使其有益於以其他鹼金屬替代鈉,或使用鹼金屬混合物而並不單獨使用鈉。假如高體積及低價格為重要的,則需要儘可能限定鹼金屬為Na2O及K2O或其組合。
依據一些實施例,玻璃包含9-17%重量比Na2O,例如10-16%重量比Na2O。在一項實施例中,玻璃包含9%重量比或更多Na2O,例如9-12%重量比Na2O。
依據一些實施例,玻璃為可向下抽拉;即玻璃能夠使用向下抽拉方法形成為片狀物,該方法包含玻璃製造業界所熟知非限制性之融合抽拉以及細縫抽拉方法。向下抽拉處理過程能夠使用於大規模製造之離子交換平板玻璃中。
依據一項實施例,玻璃包含10-30%重量比Al2O3+B2O3。
依據一項實施例,玻璃包含20-30%重量比Al2O3+B2O3。
依據一項實施例,玻璃包含21-25%重量比Al2O3+B2O3。
依據一項實施例,玻璃包含10-21%重量比Al2O3+B2O3。
依據一項實施例,玻璃包含17-21%重量比Al2O3+B2O3。
依據一項實施例,玻璃包含15-25%重量比Al2O3,例如大於15-25%重量比Al2O3,例如大於16-25%重量比Al2O3,例如16-24%重量比Al2O3,例如17-25%重量比Al2O3,例如17-21%重量比Al2O3。
依據一項實施例,玻璃包含大於15-25%重量比Al2O3,以及玻璃應變點為535℃或更高,熱膨脹係數為50x10-7或更大,以及液相線黏滯性係數為130000泊或更大,例如150000泊或更大。在一項實施例中,具有這些特性玻璃為融合可成形。
依據一項實施例,玻璃包含大於15-25%重量比Al2O3以及包含0.5-小於14%重量比RO。在一項實施例中,玻璃包含大於15-25%重量比Al2O3,0.5-小於14%重量比RO,以及玻璃應變點為535℃或更高,熱膨脹係數為50x10-7或更大,以及液相線黏滯性係數為130000泊或更大,例如150000
泊或更大。在一項實施例中,具有這些特性玻璃為融合可成形。
依據一項實施例,玻璃包含9-12%重量比Na2O,2-8% K2O,2-8% CaO,2-4% SrO,以及1-3% MgO。
融合抽拉處理過程使用具有通道之抽拉筒以承受熔融玻璃原料。通道在頂部沿著通道長度在通道兩側具有敞開之堰體。當通道填滿熔融材料時,熔融玻璃溢流過堰體。由於重力作用,熔融玻璃向下流動抽拉筒之外側表面。這些外側表面向下以及向內延伸,使得其在低於抽拉筒底下邊緣結合。兩個流動表面在該邊緣結合以融合以及形成單一流動片狀物。融合抽拉方法提供優點,即由於流過通道兩個玻璃薄膜融合在一起,所形成玻璃片外側表面並不接觸任何裝置部份。因而,表面特性並不受到該接觸而受到影響。
細縫抽拉法不同於融合抽拉法。熔融原料玻璃提供至抽拉筒。抽拉筒底部具有敞開細縫,其具有噴嘴延伸過細縫長度。熔融玻璃流過細縫/噴嘴向下抽拉為連續性片狀物經由其中以及進入退火區域。與融合抽拉處理過程比較,細縫抽拉處理過程提供較薄片狀物,只有單一片狀物抽拉通過細縫,而非融合向下抽拉處理過程中兩片融合在一起。
為了與向下抽拉處理過程相匹配,在此所說明鋁矽酸鹽玻璃具有高液相線黏滯係數。在一項實施例中,玻璃液相線黏滯性係數為50000泊或更大,例如150000泊或更大,例如200000泊或更大,例如250000泊或更大,例如300000泊或更大,例如350000泊或更大,例如400000泊或更大,
例如大於或等於500000泊。一些範例性玻璃之液相線黏滯性係數與液相線及軟化點間之差值密切地相關。
在一項實施例中,玻璃應變點為535℃或更高,例如540℃或更高,例如560℃或更高,例如570℃或更高,例如580℃或更高。在一些實施例中,玻璃熱膨脹係數為50x10-7或更大,例如60x10-7或更大,例如70x10-7或更大,例如80x10-7或更大。在一項實施例中,玻璃熱膨脹係數為50x10-7至90x10-7。
在一項實施例中,玻璃應變點為535℃或更高,例如540℃或更高,玻璃熱膨脹係數為50x10-7或更大,以及液相線黏滯性係數為150000泊或更大。在一項實施例中,具有這些特性玻璃為融合可成形。
在一項實施例中,玻璃熱膨脹係數為50x10-7或更大,以及玻璃應變點為535℃或更高。在一項實施例中,玻璃熱膨脹係數為50x10-7或更大,以及玻璃應變點為540℃或更高。在一項實施例中,玻璃熱膨脹係數為60x10-7或更大,以及玻璃應變點為560℃或更高。在一項實施例中,玻璃熱膨脹係數為60x10-7或更大,以及玻璃應變點為580℃或更高。在一項實施例中,玻璃熱膨脹係數為50x10-7或更大,以及玻璃應變點為570℃或更高。在一項實施例中,玻璃熱膨脹係數為70x10-7或更大,以及玻璃應變點為560℃或更高。所需要玻璃之實施例具有數個特性組合在所揭示範圍內。人們了解所有可能組合無法在此列出。
依據一項實施例,玻璃是在包含一種或以上鹼金屬
離子的鹽浴中離子交換。玻璃可以離子交換以改變其機械性質。例如,譬如鋰或鈉的小型鹼金屬離子,可以在包含一種或以上大型鹼金屬離子金屬的熔融鹽中離子交換,譬如鈉,鉀,銣,或銫。假使在應變點以下的溫度執行夠久的時間,將會形成擴散分佈,大型鹼金屬離子從鹽浴中移到玻璃表面,而小型鹼金屬離子從玻璃內部移到鹽浴中。當樣本移除後,表面會承受壓縮,產生加強可耐損傷的堅韌度。這種堅韌度在玻璃暴露到惡劣環境條件的情況是需要的,譬如光伏打光柵暴露在冰雹中。已經在玻璃內的大型鹼金屬離子也可以和鹽浴中的小型鹼金屬離子交換。假使這是在接近應變點的溫度下執行,又假使玻璃移除後,其表面快速地再加熱到高溫並快速冷卻,那麼玻璃表面就會顯示出由於熱回火所引起相當的壓縮應力。這也可提供來保護抵擋惡劣的環境條件。對於熟悉此項技術的人很清楚地看到,任何單價的陽離子可以和已經在玻璃內的鹼金屬離子交換,譬如銅,銀,鉈等,而這些也可以提供使用者頗有價值的特徵,譬如產生顏色,可用來發光,或提高折射率的一層,可用來擷取光線。
依據另一項實施例,玻璃可以是如已知浮式形成玻璃技術之浮式形成的。
在一項實施例中,玻璃是玻璃片的形式。玻璃片形式的玻璃可以熱退火。
在一項實施例中,有機發光二極體裝置(OLED)包括玻璃片形式的玻璃。
依據一項實施範例,玻璃是透明的。依據一項實施
範例,玻璃片是透明的。
圖1顯示出依據一項實施例光伏打裝置之形態100。在一項實施例中,光伏打裝置包含超過一片之玻璃片,例如為基板及/或蓋板。在一項實施例中,光伏打裝置包含玻璃片10作為基板及/或蓋板,導電性材料12位於鄰近於基板,以及主動光伏打介質16相鄰於導電性材料。在一項實施例中,主動光伏打介質包含銅銦鎵二硒化物(CIGS)層。在一項實施例中,主動光伏打介質包含鎘碲化物(CdTe)層。在一項實施例中,主動光伏打介質為CIGS層。在一項實施例中,主動光伏打介質為鎘碲化物(CdTe)層。
依據一項實施例,光伏打裝置更進一步包含障壁層14位於蓋板或基板與主動光伏打介質之間。在一項實施例中,光伏打裝置更進一步包含障壁層位於蓋板或基板與透明導電性氧化物(TCO)層之間或與其相鄰,其中TCO層位於主動光伏打介質與障壁層之間或與其相鄰。TCO可存在於包含CdTe功能層之光伏打裝置中。在一項實施例中,障壁層直接地位於玻璃上。障壁層會影響鹼金屬離子由玻璃遷移至裝置之其他層,例如主動光伏打介質例如增加,減少,或計量供給遷移。在一項實施例中,為基板及/或蓋板之玻璃片為透明的。
依據一些實施例,玻璃片厚度為4.0mm或較小,例如3.5mm或較小,例如3.2mm或較小,例如3.0mm或較小,例如2.5mm或較小,例如2.0mm或較小,例如1.9mm或較小,例如1.8mm或較小,例如1.5mm或較小,例如1.1mm或較小,
例如0.5-2.0mm,例如0.5-1.1mm,例如0.7-1.1mm。雖然上述為範例性厚度,玻璃片能夠具有小數之任何數字,只要其在由0.1mm至包含4.0mm範圍內。
在一項實施例中,電致變色裝置包含為片狀物形式之玻璃。電致變色裝置能夠為例如電致變色視窗。在一項實施例中,電致變色視窗包含一片或多片玻璃片,例如為單一,兩個,三個窗格視窗。
本發明的可熔融成形玻璃,由於其相當高的應變點,是用在GIGS光伏打模組很好的材料。當以熔融處理製造時,相對於浮式玻璃,其卓越的表面品質可能進一步改善光伏打模組的製造處理過程。本發明優良實施例的特性是液相線黏滯性係數超過400,000泊,因而使得一些模組製造商可能需要製造相當厚的玻璃。
範例:依據本發明一項實施例,以下是製造玻璃樣本的例子,如表1所示。此組成份對應表3所示的成分編號1。
在一些實施例中,由於一些游離元素是以不可忽略的濃度呈現,總和加起來不會超過100%。
秤重表2所示的批次材料,並加到一個4公升的塑膠容器:
應該要知道,批料中的石灰根據來源,可能包含游離元素和/或不同量的一種或以上氧化物,譬如MgO和/或BaO。砂最好是經過精選,使得至少80%可通過60篩網,譬如80篩網,譬如100篩網。在這個例子中,加入以10%的重量水準,預先和砂攪伴的SnO2,以確保和其他成分均勻攪拌。包含批次材料的瓶放到一個轉筒上,並混合批次材料,以製成均質的批料,打散軟軟的團塊。混合的批次材料移到1800cc
的鉑坩鍋,並放入高溫的陶瓷支援架。將支援架內的鉑載入溫度1630℃的燃燒爐。16個小時後,移除坩鍋+支援架,將玻璃熔融物注入到譬如鋼板冷的表面上,以形成一個餡餅狀,接著轉到退火器固定的640℃。餡餅狀的玻璃固定在退火器的溫度2小時,然後以每分鐘1℃的速率冷卻到室溫。表3、表4、表5、表6、表7、表8、表9、表10、表11及表12中顯示的是依據本發明的實施例中,而且依據上述例子製造的範例玻璃。表3、表4、表5、表6、表7、表8、表9、表10、表11及表12中也顯示一些範例玻璃的特性資料。在表中Tstr(℃)的應變點是當黏滯性係數等於以光束彎曲或纖維延伸所測得1014.7泊時的溫度。Tann(℃)的退火點是當黏滯性係數等於以光束彎曲或纖維延伸所測得1013.18泊時的溫度。Ts(℃)的軟化點是當黏滯性係數等於以光束彎曲或纖維延伸所測得107.6泊時的溫度。表中的α(10-7/℃)或a(10-7/℃)是熱膨脹係數(CTE)是依據測量從0到300℃或25到300℃尺寸改變的量。CTE一般是以膨脹計來測量。ρ(g/cc)是以亞基米德方法(ASTM C693)測得的密度。T200(℃)是200泊(P)的溫度。這是以高溫黏滯性係數(HTV)測量測得熔融物黏滯性係數是200泊時的溫度,使用的是同心圓柱的黏滯性係數計。Tliq(℃)是液相線溫度。這是在標準梯度船液相測量(ASTM C829-81)中所觀察到第一個晶體的溫度。
業界熟知此技術者瞭解本發明能夠作各種變化及改變而並不會脫離本發明之精神及範圍。因而本發明含蓋各種變化及改變均在下列申請專利範圍及其同等物範圍內。
100‧‧‧光伏打裝置
10‧‧‧玻璃片
12‧‧‧導電性材料
14‧‧‧障壁層
16‧‧‧主動光伏打介質
Claims (35)
- 一種玻璃,該玻璃基本上由下列以重量百分比表示的成分所構成:50至72%的SiO2;大於15至25%的Al2O3;0至10%的B2O3;10至25%的總M2O;以及大於0至25%的總RO;其中M為一選自於Na、K、Li、Rb以及Cs的鹼金屬,以及其中該玻璃包含至少9%重量比的Na2O,以及其中R為一選自於Mg、Ca、Ba以及Sr的鹼土金屬,其中該玻璃的應變點為535℃或更高。
- 依據申請專利範圍第1項之玻璃,其中該玻璃包含小於2.5%重量比的MgO。
- 依據申請專利範圍第2項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第2項之玻璃,其中該玻璃的熱膨脹係數為50x10-7或更大,以及該玻璃的液相線黏滯性係數為130,000泊或更大。
- 依據申請專利範圍第4項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第1項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第1項之玻璃,其中該玻璃包含0.5至小於14%重量比的RO。
- 依據申請專利範圍第7項之玻璃,其中該玻璃包含小於2.5%重量比的MgO。
- 依據申請專利範圍第8項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第8項之玻璃,其中該玻璃的熱膨脹係數為50x10-7或更大,以及該玻璃的液相線黏滯性係數為130,000泊或更大。
- 依據申請專利範圍第10項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第7項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 一種光伏打裝置,其包含申請專利範圍第1項之玻璃。
- 一種玻璃,該玻璃基本上由下列以重量百分比表示的成分所構成:50至72%的SiO2;10至25%的Al2O3;0至10%的B2O3;10至25%的總M2O;以及0.5至小於14%的總RO;其中M為一選自於Na、K、Li、Rb以及Cs的鹼金屬,以及其中該玻璃包含至少9%重量比的Na2O,以及其中R為一選自於Mg、Ca、Ba以及Sr的鹼土金屬,其中該玻璃的應變點為535℃或更高。
- 依據申請專利範圍第14項之玻璃,其中該玻璃包含小於2.5%重量比的MgO。
- 依據申請專利範圍第15項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第15項之玻璃,其中該玻璃的熱膨脹係數為50x10-7或更大,以及該玻璃的液相線黏滯性係數為130,000泊或更大。
- 依據申請專利範圍第17項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第14項之玻璃,其中該玻璃包含小於4%重量比的K2O。
- 一種光伏打裝置,其包含申請專利範圍第14項之玻璃。
- 一種光伏打裝置,其包含一玻璃,該玻璃基本上由下列以重量百分比表示的成分所構成:50至72%的SiO2;10至25%的Al2O3;0至10%的B2O3;10至25%的總M2O;以及大於0至25%的總RO;其中M為一選自於Na、K、Li、Rb以及Cs的鹼金屬,以及其中該玻璃包含至少9%重量比的Na2O,以及其中R為一選自於Mg、Ca、Ba以及Sr的鹼土金屬,其中該玻璃的應變點為535℃或更高。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃的熱膨脹係數為50x10-7或更大,以及該玻璃的液相線黏滯性係數為130,000泊或更大。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含大於15至25%重量比的Al2O3。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含55至72%重量比的SiO2。
- 依據申請專利範圍第24項之光伏打裝置,其中該玻璃包含大於15至25%重量比的Al2O3。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含9至17%重量比的Na2O。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含0.5至小於14%重量比的RO。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含大於15至25%重量比的Al2O3以及包含0.5至小於14%重量比的RO。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃為一片狀物形式。
- 依據申請專利範圍第29項之光伏打裝置,其中該玻璃為一片狀物形式以及該玻璃為一基板或一蓋板。
- 依據申請專利範圍第30項之光伏打裝置,包含一主動光伏打介質,該主動光伏打介質包含銅銦鎵二硒化物或鎘碲化物相鄰於該基板或該蓋板。
- 依據申請專利範圍第31項之光伏打裝置,包含一障壁層於該主動光伏打介質以及該基板或該蓋板之間。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含小於2.5%重量比的MgO。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含小於4%重量比的K2O。
- 依據申請專利範圍第21項之光伏打裝置,其中該玻璃包含小於2.5%重量比的MgO,以及小於4%重量比的K2O。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22829009P | 2009-07-24 | 2009-07-24 | |
US26393009P | 2009-11-24 | 2009-11-24 | |
US34758910P | 2010-05-24 | 2010-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201118054A TW201118054A (en) | 2011-06-01 |
TWI534115B true TWI534115B (zh) | 2016-05-21 |
Family
ID=43496239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099124063A TWI534115B (zh) | 2009-07-24 | 2010-07-22 | 融合可形成矽石及含鈉玻璃 |
Country Status (13)
Country | Link |
---|---|
US (2) | US8647995B2 (zh) |
EP (1) | EP2456727B1 (zh) |
JP (2) | JP5686801B2 (zh) |
KR (1) | KR101426174B1 (zh) |
CN (2) | CN102639454A (zh) |
AU (1) | AU2010275513B2 (zh) |
CA (1) | CA2769014A1 (zh) |
IN (1) | IN2012DN00690A (zh) |
MX (1) | MX2012001054A (zh) |
RU (1) | RU2012106650A (zh) |
SG (1) | SG178099A1 (zh) |
TW (1) | TWI534115B (zh) |
WO (1) | WO2011011667A1 (zh) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7593154B2 (en) * | 2005-10-11 | 2009-09-22 | Sage Electrochromics, Inc. | Electrochromic devices having improved ion conducting layers |
US8341976B2 (en) | 2009-02-19 | 2013-01-01 | Corning Incorporated | Method of separating strengthened glass |
FR2948356B1 (fr) | 2009-07-22 | 2011-08-19 | Saint Gobain | Dispositif electrochrome |
US8647995B2 (en) * | 2009-07-24 | 2014-02-11 | Corsam Technologies Llc | Fusion formable silica and sodium containing glasses |
DE102009044142A1 (de) * | 2009-09-30 | 2011-03-31 | Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg | Dünnschicht-Bauelement auf Glas, ein Verfahren zu dessen Herstellung und dessen Verwendung |
JPWO2011049146A1 (ja) * | 2009-10-20 | 2013-03-14 | 旭硝子株式会社 | Cu−In−Ga−Se太陽電池用ガラス板およびこれを用いた太陽電池 |
US9302937B2 (en) | 2010-05-14 | 2016-04-05 | Corning Incorporated | Damage-resistant glass articles and method |
CN102892722B (zh) * | 2010-05-19 | 2015-01-21 | 旭硝子株式会社 | 化学强化用玻璃及显示装置用玻璃板 |
KR20130098877A (ko) * | 2010-06-03 | 2013-09-05 | 아사히 가라스 가부시키가이샤 | 유리 기판 및 그의 제조 방법 |
DE102010023366B4 (de) * | 2010-06-10 | 2017-09-21 | Schott Ag | Verwendung von Gläsern für Photovoltaik-Anwendungen |
JP2012036074A (ja) * | 2010-07-12 | 2012-02-23 | Nippon Electric Glass Co Ltd | ガラス板 |
US8492297B2 (en) * | 2010-08-25 | 2013-07-23 | Sage Electrochromics, Inc. | Silica soda lime glass composition and use thereof |
JP5909937B2 (ja) * | 2010-09-09 | 2016-04-27 | 日本電気硝子株式会社 | 半導体パッケージ用カバーガラス及びその製造方法 |
US9434644B2 (en) * | 2010-09-30 | 2016-09-06 | Avanstrate Inc. | Cover glass and method for producing cover glass |
JP5834793B2 (ja) * | 2010-12-24 | 2015-12-24 | 旭硝子株式会社 | 化学強化ガラスの製造方法 |
JP5612233B1 (ja) * | 2010-12-24 | 2014-10-22 | 旭硝子株式会社 | 化学強化用ガラス |
FR2972446B1 (fr) * | 2011-03-09 | 2017-11-24 | Saint Gobain | Substrat pour cellule photovoltaique |
JP5661174B2 (ja) * | 2011-03-31 | 2015-01-28 | 日本板硝子株式会社 | 化学強化に適したガラス組成物、および化学強化ガラス物品 |
TWI572480B (zh) | 2011-07-25 | 2017-03-01 | 康寧公司 | 經層壓及離子交換之強化玻璃疊層 |
WO2013063292A1 (en) | 2011-10-25 | 2013-05-02 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US10350139B2 (en) | 2011-10-25 | 2019-07-16 | Corning Incorporated | Pharmaceutical glass packaging assuring pharmaceutical sterility |
BR112014009921B1 (pt) | 2011-10-25 | 2020-12-29 | Corning Incorporated | composições de vidro com uma melhor durabilidade química e mecânica |
RU2691186C2 (ru) | 2011-10-25 | 2019-06-11 | Корнинг Инкорпорейтед | Щелочноземельные алюмосиликатные стеклянные композиции с улучшенной химической и механической стойкостью |
US9517966B2 (en) | 2011-10-25 | 2016-12-13 | Corning Incorporated | Glass compositions with improved chemical and mechanical durability |
JP5987836B2 (ja) * | 2011-10-31 | 2016-09-07 | 旭硝子株式会社 | ガラス基板およびその製造方法 |
JP6079635B2 (ja) | 2011-11-18 | 2017-02-15 | 旭硝子株式会社 | 化学強化用ガラスおよび化学強化ガラス |
IN2014DN07444A (zh) | 2012-02-29 | 2015-04-24 | Corning Inc | |
US9701580B2 (en) * | 2012-02-29 | 2017-07-11 | Corning Incorporated | Aluminosilicate glasses for ion exchange |
US8746010B2 (en) * | 2012-03-12 | 2014-06-10 | Corning Incorporated | Methods for reducing zirconia defects in glass sheets |
US10273048B2 (en) | 2012-06-07 | 2019-04-30 | Corning Incorporated | Delamination resistant glass containers with heat-tolerant coatings |
EP2903945B1 (en) * | 2012-10-04 | 2020-09-02 | Corning Incorporated | Article with glass layer and glass-ceramic layer and method of making the article |
WO2014055840A2 (en) | 2012-10-04 | 2014-04-10 | Corning Incorporated | Compressively stressed laminated glass article via photosensitive glass and method of making the article |
US11352287B2 (en) | 2012-11-28 | 2022-06-07 | Vitro Flat Glass Llc | High strain point glass |
US20140238481A1 (en) * | 2013-02-28 | 2014-08-28 | Corning Incorporated | Sodium out-flux for photovoltaic cigs glasses |
US9700485B2 (en) | 2013-04-24 | 2017-07-11 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9717648B2 (en) | 2013-04-24 | 2017-08-01 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9603775B2 (en) | 2013-04-24 | 2017-03-28 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9839579B2 (en) | 2013-04-24 | 2017-12-12 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9700486B2 (en) | 2013-04-24 | 2017-07-11 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9717649B2 (en) | 2013-04-24 | 2017-08-01 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9707153B2 (en) | 2013-04-24 | 2017-07-18 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9713572B2 (en) | 2013-04-24 | 2017-07-25 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9849066B2 (en) | 2013-04-24 | 2017-12-26 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9707154B2 (en) | 2013-04-24 | 2017-07-18 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9707155B2 (en) | 2013-04-24 | 2017-07-18 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9701567B2 (en) | 2013-04-29 | 2017-07-11 | Corning Incorporated | Photovoltaic module package |
US9257585B2 (en) * | 2013-08-21 | 2016-02-09 | Siva Power, Inc. | Methods of hermetically sealing photovoltaic modules using powder consisting essentially of glass |
EP3034543B1 (en) | 2013-09-20 | 2021-03-31 | Lintec Corporation | Curable composition, curing product, and method for using curable composition |
DE102013019003A1 (de) * | 2013-11-13 | 2015-05-13 | Taiwan Glass Ind. Corp. | Alkali-Alumino-Silikatglas |
WO2015077109A1 (en) * | 2013-11-20 | 2015-05-28 | Corning Incorporated | Scratch-resistant boroaluminosilicate glass |
KR20170066580A (ko) | 2014-10-07 | 2017-06-14 | 코닝 인코포레이티드 | 결정된 응력 프로파일을 갖는 유리 제품 및 이의 제조 방법 |
JP7045857B2 (ja) * | 2015-06-05 | 2022-04-01 | シエル・インターナシヨネイル・リサーチ・マーチヤツピイ・ベー・ウイ | モデル予測制御アプリケーションにおける最高性能値に関する優れた性能のためのシステム及び方法 |
DE102015116097B4 (de) * | 2015-09-23 | 2017-09-21 | Schott Ag | Chemisch beständiges Glas und dessen Verwendung |
JP6957456B2 (ja) * | 2015-10-14 | 2021-11-02 | コーニング インコーポレイテッド | 決定された応力プロファイルを有する積層ガラス物品及びその形成方法 |
EP3365595B1 (en) * | 2015-10-22 | 2020-12-23 | Corning Incorporated | High transmission light guide plates |
CN105565647A (zh) * | 2015-12-14 | 2016-05-11 | 厦门博恩思应用材料科技有限公司 | 一种不完全熔合玻璃组及其制备方法 |
WO2018129282A1 (en) | 2017-01-09 | 2018-07-12 | Corning Incorporated | Ion-exchangeable glass with low coefficient of thermal expansion |
WO2019126252A1 (en) | 2017-12-19 | 2019-06-27 | Ocv Intellectual Capital, Llc | High performance fiberglass composition |
GB201806356D0 (en) * | 2018-04-18 | 2018-05-30 | Alzahrani Ali Saleh A | Chemically strengthened glass-ceramics |
WO2021119750A1 (en) * | 2019-12-18 | 2021-06-24 | Macquarie University | Aluminosilicate glass |
WO2023022074A1 (ja) * | 2021-08-17 | 2023-02-23 | 日本電気硝子株式会社 | 宇宙太陽光発電用ガラス基板 |
Family Cites Families (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4156755A (en) | 1978-04-19 | 1979-05-29 | Ppg Industries, Inc. | Lithium containing ion exchange strengthened glass |
US4298389A (en) | 1980-02-20 | 1981-11-03 | Corning Glass Works | High transmission glasses for solar applications |
JP2743333B2 (ja) | 1989-10-31 | 1998-04-22 | 日本電気硝子株式会社 | 基板用ガラス |
US5631195A (en) | 1994-09-14 | 1997-05-20 | Asahi Glass Company Ltd. | Glass composition and substrate for plasma display |
JP3831957B2 (ja) | 1994-09-14 | 2006-10-11 | 旭硝子株式会社 | ガラス組成物及びプラズマディスプレー用基板 |
JPH0936400A (ja) * | 1995-07-25 | 1997-02-07 | Asahi Glass Co Ltd | 太陽電池用ガラス基板及びその製造方法 |
US5674790A (en) | 1995-12-15 | 1997-10-07 | Corning Incorporated | Strengthening glass by ion exchange |
JPH10152339A (ja) | 1996-09-27 | 1998-06-09 | Nippon Sheet Glass Co Ltd | 耐熱性ガラス組成物 |
JP3904158B2 (ja) | 1996-11-27 | 2007-04-11 | Hoya株式会社 | テクスチャー付磁気ディスク用ガラス基板の製造方法 |
US6060168A (en) | 1996-12-17 | 2000-05-09 | Corning Incorporated | Glasses for display panels and photovoltaic devices |
US5972460A (en) | 1996-12-26 | 1999-10-26 | Hoya Corporation | Information recording medium |
JPH10241134A (ja) | 1996-12-26 | 1998-09-11 | Hoya Corp | 情報記録媒体用ガラス基板及びこれを用いた磁気記録媒体 |
FR2758550B1 (fr) | 1997-01-17 | 1999-02-12 | Saint Gobain Vitrage | Compositions de verre silico-sodo-calcique et leurs applications |
JPH11135819A (ja) | 1997-10-31 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 化合物薄膜太陽電池 |
JPH11180728A (ja) | 1997-12-22 | 1999-07-06 | Central Glass Co Ltd | ディスプレイ装置用基板ガラス組成物 |
JPH11180727A (ja) | 1997-12-22 | 1999-07-06 | Central Glass Co Ltd | 表示装置用基板ガラス組成物 |
JP4320823B2 (ja) | 1998-02-27 | 2009-08-26 | 旭硝子株式会社 | 基板用ガラス組成物 |
JPH11302032A (ja) * | 1998-04-17 | 1999-11-02 | Nippon Sheet Glass Co Ltd | ガラス組成物およびそれを用いた情報記録媒体用基板 |
JPH11310433A (ja) | 1998-04-27 | 1999-11-09 | Central Glass Co Ltd | 表示装置用基板ガラス |
JPH11335133A (ja) | 1998-05-27 | 1999-12-07 | Central Glass Co Ltd | 表示装置用基板ガラス |
US6319867B1 (en) | 1998-11-30 | 2001-11-20 | Corning Incorporated | Glasses for flat panel displays |
US6207603B1 (en) | 1999-02-05 | 2001-03-27 | Corning Incorporated | Solar cell cover glass |
US6436859B1 (en) | 1999-03-25 | 2002-08-20 | Central Glass Company, Limited | Glass composition and ion exchange strengthened glass article produced from same |
JP3959588B2 (ja) | 1999-05-13 | 2007-08-15 | 日本板硝子株式会社 | 情報記録媒体用ガラス基板、情報記録媒体用ガラス基板の製造方法及び情報記録媒体 |
DE19934072C2 (de) | 1999-07-23 | 2001-06-13 | Schott Glas | Alkalifreies Aluminoborosilicatglas, seine Verwendungen und Verfahren zu seiner Herstellung |
DE19939789A1 (de) | 1999-08-21 | 2001-02-22 | Schott Glas | Alkalifreie Aluminoborosilicatgläser und deren Verwendungen |
DE19942259C1 (de) | 1999-09-04 | 2001-05-17 | Schott Glas | Erdalkalialuminoborosilicatglas und dessen Verwendungen |
DE10000836B4 (de) | 2000-01-12 | 2005-03-17 | Schott Ag | Alkalifreies Aluminoborosilicatglas und dessen Verwendungen |
DE10005088C1 (de) | 2000-02-04 | 2001-03-15 | Schott Glas | Alkalihaltiges Aluminoborosilicatglas und seine Verwendung |
JP2002003241A (ja) | 2000-06-19 | 2002-01-09 | Central Glass Co Ltd | プレス成形用ガラスおよび情報記録媒体用基板ガラス |
JP2002025762A (ja) | 2000-07-04 | 2002-01-25 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
JP2002053340A (ja) | 2000-08-09 | 2002-02-19 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
JP2002175844A (ja) * | 2000-12-07 | 2002-06-21 | Seiko Epson Corp | 太陽電池 |
JP2002174810A (ja) | 2000-12-08 | 2002-06-21 | Hoya Corp | ディスプレイ用ガラス基板及びその製造方法並びにこれを用いたディスプレイ |
DE10064804C2 (de) | 2000-12-22 | 2003-03-20 | Schott Glas | Alkalifreie Aluminoborosilicatgläser und ihre Verwendung |
JP3702360B2 (ja) | 2001-01-04 | 2005-10-05 | 日本板硝子株式会社 | 化学強化用のガラス素板の製造方法 |
JP4785274B2 (ja) * | 2001-05-29 | 2011-10-05 | 日本板硝子株式会社 | ガラス物品およびそれを用いた磁気記録媒体用ガラス基板 |
JP3995902B2 (ja) * | 2001-05-31 | 2007-10-24 | Hoya株式会社 | 情報記録媒体用ガラス基板及びそれを用いた磁気情報記録媒体 |
JP4863580B2 (ja) * | 2001-07-25 | 2012-01-25 | 京セラ株式会社 | ガラス組成物および絶縁皮膜、並びにシリコンデバイス |
US6753279B2 (en) * | 2001-10-30 | 2004-06-22 | Corning Incorporated | Glass composition for display panels |
JP2003212591A (ja) * | 2002-01-25 | 2003-07-30 | Hoya Corp | 陰極線管パネル用母材ガラス、陰極線管用パネルおよびその製造方法 |
JP2003261352A (ja) | 2002-03-08 | 2003-09-16 | Asahi Techno Glass Corp | ディスプレイ用ガラスおよびディスプレイ用ガラス部品 |
US7309671B2 (en) | 2002-05-24 | 2007-12-18 | Nippon Sheet Glass Co., Ltd. | Glass composition, glass article, glass substrate for magnetic recording media, and method for producing the same |
JP4446683B2 (ja) * | 2002-05-24 | 2010-04-07 | Hoya株式会社 | 磁気記録媒体用ガラス基板 |
WO2004009504A1 (ja) | 2002-07-24 | 2004-01-29 | Nippon Sheet Glass Company, Limited | レーザ加工用ガラス |
US6992030B2 (en) | 2002-08-29 | 2006-01-31 | Corning Incorporated | Low-density glass for flat panel display substrates |
JP2004131314A (ja) | 2002-10-09 | 2004-04-30 | Asahi Glass Co Ltd | 透明導電膜付き化学強化ガラス基板、およびその製造方法 |
JP4320772B2 (ja) | 2003-02-13 | 2009-08-26 | 日本電気硝子株式会社 | フラットパネルディスプレイ装置用ガラス基板 |
US7273668B2 (en) | 2003-06-06 | 2007-09-25 | Hoya Corporation | Glass composition including zirconium, chemically strengthened glass article, glass substrate for magnetic recording media, and method of producing glass sheet |
JP4656863B2 (ja) * | 2003-06-06 | 2011-03-23 | Hoya株式会社 | ジルコニウムを含むガラス組成物、化学強化ガラス物品、磁気記録媒体用ガラス基板、およびガラス板の製造方法 |
JP2006083045A (ja) | 2004-09-17 | 2006-03-30 | Hitachi Ltd | ガラス部材 |
CN101094726A (zh) * | 2004-11-10 | 2007-12-26 | 德斯塔尔科技公司 | 用于以cigs建立原位结层的热方法 |
CN1298644C (zh) * | 2005-02-28 | 2007-02-07 | 常熟市幸福玻璃建材有限公司 | 太阳能光伏电池组件的盖板玻璃的加工工艺 |
JP4977965B2 (ja) | 2005-05-02 | 2012-07-18 | 旭硝子株式会社 | 無アルカリガラスおよびその製造方法 |
US8389852B2 (en) | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
JP5232362B2 (ja) * | 2006-04-17 | 2013-07-10 | 株式会社カネカ | 集積化薄膜光電変換装置の製造方法および、その製造方法で得られうる集積化薄膜光電変換装置。 |
EP3178794A1 (en) | 2006-06-08 | 2017-06-14 | Hoya Corporation | Glass for use in substrate for information recording medium, substrate for information recording medium and information recording medium, and their manufacturing method |
DE102006042620B4 (de) | 2006-09-04 | 2012-01-26 | Schott Ag | Verwendung eines Aluminoborosilikatglases als Substratglas |
JP5071878B2 (ja) | 2006-09-12 | 2012-11-14 | 日本電気硝子株式会社 | 無アルカリガラスおよびこれを用いた無アルカリガラス基板 |
JP5808069B2 (ja) * | 2007-02-16 | 2015-11-10 | 日本電気硝子株式会社 | 太陽電池用ガラス基板 |
KR20080079058A (ko) | 2007-02-26 | 2008-08-29 | 엘지전자 주식회사 | 박막형 태양전지 모듈과 그의 제조방법 |
JP5483821B2 (ja) | 2007-02-27 | 2014-05-07 | AvanStrate株式会社 | 表示装置用ガラス基板および表示装置 |
US7666511B2 (en) | 2007-05-18 | 2010-02-23 | Corning Incorporated | Down-drawable, chemically strengthened glass for cover plate |
WO2008149858A1 (ja) | 2007-06-07 | 2008-12-11 | Nippon Electric Glass Co., Ltd. | 強化ガラス基板及びその製造方法 |
JP5234387B2 (ja) | 2007-06-12 | 2013-07-10 | 日本電気硝子株式会社 | 無アルカリガラスおよび無アルカリガラス基板並びにその製造方法 |
US20080308146A1 (en) | 2007-06-14 | 2008-12-18 | Guardian Industries Corp. | Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same |
JP5467490B2 (ja) * | 2007-08-03 | 2014-04-09 | 日本電気硝子株式会社 | 強化ガラス基板の製造方法及び強化ガラス基板 |
JP5339173B2 (ja) * | 2007-09-27 | 2013-11-13 | 日本電気硝子株式会社 | 強化ガラス基板及びガラス並びに強化ガラス基板の製造方法 |
JP5103145B2 (ja) * | 2007-11-15 | 2012-12-19 | シャープ株式会社 | 光電変換装置用基板およびそれを用いた光電変換装置 |
AT10578U1 (de) | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht |
EP3138822B1 (en) | 2008-02-26 | 2023-07-26 | Corning Incorporated | Fining agents for silicate glasses |
US8232218B2 (en) * | 2008-02-29 | 2012-07-31 | Corning Incorporated | Ion exchanged, fast cooled glasses |
KR101233528B1 (ko) * | 2008-04-21 | 2013-02-14 | 아사히 가라스 가부시키가이샤 | 디스플레이 패널용 유리판, 그 제조 방법 및 tft 패널의 제조 방법 |
EP2299536A4 (en) * | 2008-06-17 | 2011-12-21 | Nippon Electric Glass Co | SUBSTRATE FOR SOLAR CELL AND OXIDE SEMICONDUCTOR ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL |
JP5867953B2 (ja) | 2008-06-27 | 2016-02-24 | 日本電気硝子株式会社 | 強化ガラスおよび強化用ガラス |
JP5614607B2 (ja) | 2008-08-04 | 2014-10-29 | 日本電気硝子株式会社 | 強化ガラスおよびその製造方法 |
JP5644043B2 (ja) | 2008-11-26 | 2014-12-24 | 横河電機株式会社 | 波長校正装置 |
US8647995B2 (en) * | 2009-07-24 | 2014-02-11 | Corsam Technologies Llc | Fusion formable silica and sodium containing glasses |
US8802581B2 (en) | 2009-08-21 | 2014-08-12 | Corning Incorporated | Zircon compatible glasses for down draw |
JP2011226137A (ja) | 2010-04-19 | 2011-11-10 | Okabe Co Ltd | 入隅部補強金物 |
KR20130098877A (ko) | 2010-06-03 | 2013-09-05 | 아사히 가라스 가부시키가이샤 | 유리 기판 및 그의 제조 방법 |
-
2010
- 2010-07-21 US US12/840,754 patent/US8647995B2/en active Active
- 2010-07-22 TW TW099124063A patent/TWI534115B/zh active
- 2010-07-23 RU RU2012106650/03A patent/RU2012106650A/ru not_active Application Discontinuation
- 2010-07-23 IN IN690DEN2012 patent/IN2012DN00690A/en unknown
- 2010-07-23 CN CN2010800382665A patent/CN102639454A/zh active Pending
- 2010-07-23 MX MX2012001054A patent/MX2012001054A/es not_active Application Discontinuation
- 2010-07-23 JP JP2012521823A patent/JP5686801B2/ja active Active
- 2010-07-23 WO PCT/US2010/043027 patent/WO2011011667A1/en active Application Filing
- 2010-07-23 AU AU2010275513A patent/AU2010275513B2/en not_active Expired - Fee Related
- 2010-07-23 EP EP10737216.1A patent/EP2456727B1/en active Active
- 2010-07-23 CN CN201710691512.0A patent/CN107285624A/zh active Pending
- 2010-07-23 CA CA2769014A patent/CA2769014A1/en not_active Abandoned
- 2010-07-23 KR KR1020127004756A patent/KR101426174B1/ko active IP Right Grant
- 2010-07-23 SG SG2012005161A patent/SG178099A1/en unknown
-
2014
- 2014-02-10 US US14/176,500 patent/US9530910B2/en active Active
-
2015
- 2015-01-20 JP JP2015008530A patent/JP6193280B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
IN2012DN00690A (zh) | 2015-06-19 |
AU2010275513A1 (en) | 2012-03-01 |
JP2015129083A (ja) | 2015-07-16 |
JP2013500229A (ja) | 2013-01-07 |
CN107285624A (zh) | 2017-10-24 |
MX2012001054A (es) | 2012-06-12 |
JP5686801B2 (ja) | 2015-03-18 |
EP2456727B1 (en) | 2021-05-26 |
AU2010275513B2 (en) | 2015-07-02 |
CN102639454A (zh) | 2012-08-15 |
RU2012106650A (ru) | 2013-08-27 |
US20110017297A1 (en) | 2011-01-27 |
SG178099A1 (en) | 2012-03-29 |
WO2011011667A1 (en) | 2011-01-27 |
CA2769014A1 (en) | 2011-01-27 |
US20140150867A1 (en) | 2014-06-05 |
TW201118054A (en) | 2011-06-01 |
US8647995B2 (en) | 2014-02-11 |
US9530910B2 (en) | 2016-12-27 |
JP6193280B2 (ja) | 2017-09-06 |
EP2456727A1 (en) | 2012-05-30 |
KR101426174B1 (ko) | 2014-08-01 |
KR20120049296A (ko) | 2012-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI534115B (zh) | 融合可形成矽石及含鈉玻璃 | |
TWI565674B (zh) | 含鈉之熔融可成形玻璃 | |
TWI462889B (zh) | 不含鈉融合可成形玻璃 | |
TWI403482B (zh) | 中度熱膨漲係數玻璃 |