CN107285624A - 包含氧化硅和钠的可熔合成形玻璃 - Google Patents

包含氧化硅和钠的可熔合成形玻璃 Download PDF

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CN107285624A
CN107285624A CN201710691512.0A CN201710691512A CN107285624A CN 107285624 A CN107285624 A CN 107285624A CN 201710691512 A CN201710691512 A CN 201710691512A CN 107285624 A CN107285624 A CN 107285624A
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glass
weight
sio
less
alkali metal
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B·G·艾特肯
J·E·小迪金森
T·J·基克辛斯基
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Grosman Technology Co Ltd
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Abstract

本文描述了含钠的铝硅酸盐和硼铝硅酸盐玻璃。所述玻璃可用作光伏器件的基板或覆板,例如薄膜光伏器件,如CIGS光伏器件的基板或覆板。这些玻璃的特征是其应变点≥535℃,例如≥570℃,热膨胀系数为8‑9ppm/℃,液相线粘度超过50000泊。因此,它们理想地适合通过熔合法成形为板材。

Description

包含氧化硅和钠的可熔合成形玻璃
本发明专利申请是国际申请号为PCT/US2010/043027,国际申请日为2010年7月23日,进入中国国家阶段的申请号为201080038266.5,发明名称为“包含氧化硅和钠的可熔合成形玻璃”的发明专利申请的分案申请。
背景
本申请要求2009年7月24日提交的美国临时专利申请第61/228290号、2009年11月24日提交的美国临时专利申请第61/263930号、2010年5月24日提交的美国临时专利申请第61/347589号以及2010年7月21提交的美国临时专利申请第12/840754号的优先权。
技术领域
本发明的实施方式一般涉及含钠玻璃,更具体地涉及包含氧化硅和钠的可熔合成形玻璃,所述玻璃可用于光致变色、电致变色、有机发光二极管(OLED)照明或光伏应用,例如薄膜光伏器件。
背景技术
近来,人们对薄膜光伏器件提供的更高效率十分关注,受此驱动,人们大力开发适合此新兴市场需求的新型玻璃基板和覆板(superstrate)。薄膜光伏器件的制造工艺通常要求基板能够在升高的温度下处理很长的时间而不发生翘曲,这使玻璃特别适合这些应用。另外,一些薄膜光伏器件的工艺(如CIGS)需要钠从玻璃扩散到沉积层,使得含钠玻璃更加适合特定的应用。
现有的玻璃(如钠钙玻璃或显示器玻璃组合物)过去在本领域常常显示出极高的效率,但使用为其它应用设计的任何玻璃时,就会遇到问题。例如,钠钙玻璃可提供廉价、易得的含钠基板,但其低应变点严重妨碍它在温度更高的工艺中的应用,无法使薄膜光伏器件工艺达到其最高效率。
使用为显示应用设计的玻璃满足了高应变点的要求,但这些玻璃的热膨胀系数(CTE)往往太低,因其CTE与光伏薄膜不匹配而无法可靠地制造大光伏面板。另外,为显示应用设计的许多玻璃特意不含碱金属,使它们更不适合用于那些需要钠从玻璃扩散的薄膜光伏应用。
在一些薄膜光伏应用中,如果能够获得具有高应变点和高CTE的含钠玻璃板,那将是有利的。此外,如果含钠玻璃不仅具有高应变点和高CTE,而且可熔合形成,以便加工成具有最佳表面特性的平板,那将是非常有利的。
发明内容
本文描述了可熔合成形、应变点高、含钠的铝硅酸盐和硼铝硅酸盐玻璃的组成范围,所述玻璃可用于薄膜光伏应用。更具体地,这些玻璃是用于二硒化铜铟镓(CIGS)光伏模块的优选材料,在所述模块中,优化电池效率所需的钠来自基板玻璃。目前,CIGS模块基板通常用通过浮法制造的钠钙玻璃板制成。不过,使用应变点更高的玻璃基板可使CIGS能在更高的温度下接受处理,这有望给电池效率带来有利的改进。此外,若熔合成形的玻璃板的表面更加光滑,则可能产生额外的好处,如增强膜的粘合性等。
因此,本文所述含钠玻璃的特征在于,其应变点≥540℃,例如≥570℃,从而提供相对于钠钙玻璃的优点,且/或其液相线粘度≥50,000泊,使其可通过熔合法制造,例如液相线粘度为130000泊或更大。为避免基板与CIGS层之间的热膨胀不匹配,根据一些实施方式,本发明的玻璃的另一个特征在于,其热膨胀系数为8-9ppm/℃。
一个实施方式是一种玻璃,以重量百分数表示,它包含:
50-72%的SiO2
大于15%至25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计大于0%至25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
另一个实施方式是一种玻璃,以重量百分数表示,它包含:
50-72%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
0.5%至小于14%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
另一个实施方式是一种包含玻璃的光伏器件,以重量百分数表示,所述玻璃包含:
50-72%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计大于0%至25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在以下的详细描述中列出了本发明的附加特征和优点,其中的部分特征和优点对本领域的技术人员而言由所述内容而容易理解,或按文字描述和其权利要求书以及附图中所述实施本发明而被认识。
应理解,前面的一般性描述和以下的详细描述都只是对本发明的示例,用来提供理解要求保护的本发明的性质和特性的总体评述或框架。
包括的附图提供了对本发明的进一步理解,附图被结合在本说明书中并构成说明书的一部分。附图呈现了本发明的一个或多个实施方式,并与说明书一起用来解释本发明的原理和操作。
附图说明
可单独通过以下详述或通过以下详述并结合附图理解本发明。
图1是根据一个实施方式的光伏器件的特征的示意图。
具体实施方式
下面详细说明本发明的各实施方式。
在本文中,根据光伏电池的结构,术语“基板”可以用来描述基板或者覆板。例如,若所述基板在装入光伏电池时位于光伏电池的光入射侧,则所述基板是覆板。所述覆板可以为光伏材料提供保护,使其免受冲击和环境降解,同时允许太阳光谱中合适的波长透过。另外,可以将多个光伏电池组装成光伏模块。光伏器件可以表示电池、模块或同时包括此二者。
在本文中,术语“相邻的”可以定义为紧邻。相邻的结构可以互相发生物理接触,也可以不发生物理接触。相邻的结构可以包括设置在它们之间的其它的层和/或结构。
一个实施方式是一种玻璃,以重量百分数表示,它包含:
50-72%的SiO2
大于15%至25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计大于0%至25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
另一个实施方式是一种玻璃,以重量百分数表示,它包含:
50-72%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
0.5%至小于14%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
另一个实施方式是一种包含玻璃的光伏器件,以重量百分数表示,所述玻璃包含:
50-72%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计大于0%至25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,所述光伏器件包含玻璃,以重量百分数表示,所述玻璃主要由以下组分组成:
50-72%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计大于0%至25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
所述光伏器件可包含所述玻璃的上述任何实施方式。玻璃可以是玻璃板的形式,可以是光伏器件的基板或覆板或同时为二者。
在另一个实施方式中,以重量百分数表示,所述玻璃包含:
50-72%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计大于0%至25%的RO;
其中M是选自Na、Li、Rb和Cs的碱金属,玻璃基本上不含K2O,且玻璃包含9-17重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,以重量百分数表示,所述玻璃主要由以下组分组成:
50-72%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计大于0%至25%的RO;
其中M是选自Na、Li、Rb和Cs的碱金属,玻璃基本上不含K2O,且玻璃包含9-17重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,以重量百分数表示,所述玻璃包含:
50-59%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,以重量百分数表示,所述玻璃包含:
54-59%的SiO2
10-21%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
根据另一个实施方式,以重量百分数表示,所述玻璃包含:
54-59%的SiO2
17-21%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
根据另一个实施方式,以重量百分数表示,所述玻璃包含:
52-59%的SiO2
20-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,以重量百分数表示,所述玻璃主要由以下组分组成:
54-59%的SiO2
17-21%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,以重量百分数表示,所述玻璃包含:
56-58%的SiO2
17-21%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,以重量百分数表示,所述玻璃主要由以下组分组成:
50-59%的SiO2
10-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在另一个实施方式中,以重量百分数表示,所述玻璃主要由以下组分组成:
52-59%的SiO2
20-25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在又一个实施方式中,以重量百分数表示,所述玻璃主要由以下组分组成:
56-58%的SiO2
17-21%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
在一个实施方式中,以重量百分数表示,所述玻璃主要由以下组分组成:
54-59%的SiO2
10-21%的Al2O3
0-10%的B2O3
共计10-25%的M2O;以及
共计2-25%的RO;
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O;R是选自Mg、Ca、Ba和Sr的碱土金属。
根据一个实施方式,所述玻璃包含55-72重量%的SiO2,例如51-72重量%的SiO2,例如52-72重量%的SiO2,例如53-72重量%的SiO2,例如54-72重量%的SiO2,例如55-72重量%的SiO2,例如56-72重量%的SiO2,例如57-72重量%的SiO2,例如58-72重量%的SiO2,例如59-72重量%的SiO2,例如60-72重量%的SiO2。在一个实施方式中,所述玻璃包含55-72重量%的SiO2,且包含大于15重量%至25重量%的Al2O3
在一个实施方式中,所述玻璃是可卷起的。在一个实施方式中,所述玻璃是可下拉的。例如,所述玻璃可以狭缝拉制或熔合拉制。根据另一个实施方式,所述玻璃可以通过浮法成形。
根据一个实施方式,所述玻璃包含小于8重量%的K2O,例如小于7重量%的K2O,例如小于6重量%的K2O,小于5重量%的K2O,小于4重量%的K2O,例如小于3重量%的K2O。根据一些实施方式,所述玻璃基本上不含K2O,例如基本上没有K2O。
根据一个实施方式,所述玻璃包含小于4重量%的K2O,且所述玻璃的应变点为535℃或更高,热膨胀系数为50x 10-7或更大,液相线粘度为130000泊或更大,例如150000泊或更大。在一个实施方式中,具有这些性质的玻璃是可熔合成形的。
根据一个实施方式,所述玻璃包含小于4重量%的K2O和小于2.5重量%的MgO。在一个实施方式中,所述玻璃包含小于4重量%的K2O和小于2.5重量%的MgO,其应变点为535℃或更高,热膨胀系数为50x 10-7或更大,液相线粘度为130000泊或更大,例如150000泊或更大。在一个实施方式中,具有这些性质的玻璃是可熔合成形的。
所述玻璃的一些实施方式具有Na2O含量高的优点,使其在制造光伏电池的过程中能够向沉积的CIGS层传递更多的Na——这又可预期产生更高的CIGS电池效率。最后,由于另一种碱金属的存在可能阻碍Na在CIGS沉积/晶化期间向外扩散,一些例子不含K或K2O含量显著降低可能又提供了一种优点。
所述玻璃可进一步包含等于或小于3重量%,例如0-3重量%,例如大于0重量%至3重量%,例如1-3重量%的TiO2、MnO、ZnO、Nb2O5、MoO3、Ta2O5、WO3、ZrO2、Y2O3、La2O3、HfO2、CdO、SnO2、Fe2O3、CeO2、As2O3、Sb2O3、Cl、Br,或其组合。在一个实施方式中,所述玻璃包含等于或小于3重量%,例如0-3重量%,例如大于0重量%至3重量%,例如1-3重量%的TiO2或ZrO2
如上所述,根据一些实施方式,所述玻璃包含0-10重量%,例如1-8重量%,或者例如大于0重量%至10重量%的B2O3,例如0.5-10重量%的B2O3,例如1-10重量%的B2O3。相对于不含B2O3的玻璃,向玻璃中加入B2O3可以降低熔融温度,降低液相线温度,增大液相线粘度,改进机械耐久性。在一个实施方式中,所述玻璃基本上不含B2O3
根据一个实施方式,所述玻璃包含大于0%至25%的RO,例如0.5-25%的RO,例如1-25%的RO,其中R是碱土金属。根据一个实施方式,所述玻璃包含小于14%的RO,例如13%或更少,例如12%或更少,例如11%或更少,例如10%或更少,例如9%或更少,例如8%或更少。在一个实施方式中,所述玻璃包含0.5%至小于14%的RO,例如0.5-13%的RO。根据一个实施方式,所述玻璃包含例如大于2%至25%的RO,其中R是碱土金属。
根据一个实施方式,所述玻璃包含0.5%至小于14%的RO,且所述玻璃的应变点为535℃或更高,热膨胀系数为50x 10-7或更大,液相线粘度为130000泊或更大,例如150000泊或更大。在一个实施方式中,具有这些性质的玻璃是可熔合成形的。
根据一些实施方式,所述玻璃包含小于4.0重量%的MgO,例如小于3.0重量%的MgO,例如小于2.5重量%的MgO,小于2.0重量%的MgO。所述玻璃可包含例如0-4重量%的MgO,例如大于0重量%至4重量%的MgO,例如大于0重量%至3重量%的MgO,例如大于0重量%至2.5重量%的MgO,例如0.2-4重量%的MgO,例如0.2-3重量%的MgO,例如0.2-2.5重量%的MgO。根据另一个实施方式,所述玻璃包含例如1-3重量%的MgO。可以将MgO加入玻璃中,以降低熔融温度和增大应变点。相对于其它的碱土金属(例如CaO、SrO、BaO),加入MgO会不利地降低CTE,因此,可以采取其它的调节措施将CTE保持在所需的范围内。合适的调节措施的例子包括减少CaO的同时增加SrO,增大碱金属氧化物的浓度,用较大的碱金属氧化物(例如K2O)替换部分较小的碱金属氧化物(例如Na2O)。
根据一个实施方式,所述玻璃包含小于2.5重量%的MgO,且所述玻璃的应变点为535℃或更高,热膨胀系数为50x 10-7或更大,液相线粘度为130000泊或更大,例如150000泊或更大。在一个实施方式中,具有这些性质的玻璃是可熔合成形的。
根据另一个实施方式,所述玻璃基本不含BaO。例如,BaO的含量可以等于或小于0.05重量%,例如为0重量%。
在一些实施方式中,所述玻璃基本不含Sb2O3、As2O3或其组合,例如,所述玻璃包含等于或小于0.05重量%的Sb2O3或As2O3或其组合。例如,所述玻璃可以包含0重量%的Sb2O3或As2O3或其组合。
在一些实施方式中,所述玻璃包含2-4重量%的CaO。相对于碱金属氧化物或者SrO,CaO有助于提高应变点、减小密度和降低熔融温度。它是某些可能的失透相的主要组分,特别是钙长石(CaAl2Si2O8),该相包含带有类似的钠相钠长石(NaAlSi3O8)的完全固溶体。单单是Na含量和Ca含量高会导致无法接受的高液相线温度。但是,CaO的化学来源包括石灰石,这是一种非常廉价的材料,因此在高体积和低成本主导的情况下,通常可以使CaO的含量相对于其他碱土金属氧化物的含量在合理的情况下尽可能高。
在一些实施方式中,所述玻璃可包含0.2-4重量%的SrO,例如0.5-4重量%的SrO,例如1-4重量%的SrO,例如2-4重量%的SrO。在某些实施方式中,所述玻璃不含有意配入的SrO,当然,SrO也可以作为其它批料中的污染组分包含在其中。SrO有助于提高热膨胀系数,可以通过控制SrO和CaO的相对比例来改进液相线温度,由此改进液相线粘度。SrO不能像CaO或MgO那样有效地改进应变点,用SrO代替此二者中的任一种都会使熔融温度升高。
同样如上所述,根据一些实施方式,所述玻璃包含10-25%的M2O,其中M是碱金属阳离子Li、Na、K、Rb和Cs之一。碱金属阳离子会使CTE急剧升高,但是也会降低应变点,并且根据其加入形式,会使得熔融温度升高。对CTE影响最小的碱金属氧化物是Li2O,影响最大的碱金属氧化物是Cs2O。如上文所述,钠可以参与到本发明玻璃的一种可能的失透相中,尽管可以通过对其它组分进行调节来抵消此种现象,例如改变CaO/(CaO+SrO)比值,但是此种趋势使得优选用其它的碱金属代替钠,或者使用碱金属的组合而不是单独使用钠。如果高体积和低成本是重要的,那么优选尽可能将所述碱金属氧化物限定为Na2O和K2O,或其组合。
根据一些实施方式,所述玻璃包含9-17%的Na2O,例如10-16%的Na2O。在一个实施方式中,所述玻璃包含9重量%或更多的Na2O,例如9-12重量%的Na2O。
根据一些实施方式,所述玻璃可以进行下拉操作;也就是说,能够采用下拉法使玻璃成形为板材,所述下拉法包括例如但不限于熔合拉制法和狭缝拉制法,这些方法是玻璃制造领域的技术人员已知的。这些下拉工艺被用于可离子交换的平板玻璃的大规模制造。
根据一个实施方式,所述玻璃包含10-30重量%的Al2O3+B2O3
根据一个实施方式,所述玻璃包含20-30重量%的Al2O3+B2O3
根据一个实施方式,所述玻璃包含21-25重量%的Al2O3
根据一个实施方式,所述玻璃包含10-21重量%的Al2O3+B2O3
根据一个实施方式,所述玻璃包含17-21重量%的Al2O3+B2O3
根据一个实施方式,所述玻璃包含大于15重量%至25重量%的Al2O3,例如等于或大于16重量%至25重量%,例如16-24重量%的Al2O3,或者例如17-25重量%的Al2O3,例如17-21重量%Al2O3
根据一个实施方式,所述玻璃包含大于15重量%至25重量%的Al2O3,且所述玻璃的应变点为535℃或更高,热膨胀系数为50x 10-7或更大,液相线粘度为130000泊或更大,例如150000泊或更大。在一个实施方式中,具有这些性质的玻璃是可熔合成形的。
根据一个实施方式,所述玻璃包含大于15%至25%的Al2O3,包含0.5%至小于14%的RO。在一个实施方式中,所述玻璃包含大于15%至25%的Al2O3,0.5%至小于14%的RO,其应变点为535℃或更高,热膨胀系数为50x 10-7或更大,液相线粘度为130000泊或更大,例如150000泊或更大。在一个实施方式中,具有这些性质的玻璃是可熔合成形的。
根据一个实施方式,所述玻璃包含:
9-12%的Na2O;
2-8%的K2O;
2-8%的CaO;
2-4%的SrO;以及
1-3%的MgO。
所述熔合拉制法使用拉制容器,该拉制容器包含沟槽,用来接受熔融的玻璃原料。这些沟槽沿着沟槽的长度,在沟槽两侧具有顶部开放的堰。当在沟槽内装入熔融材料的时候,熔融的玻璃从堰上溢流。在重力的作用下,熔融玻璃从拉制容器的外表面流下。这些外表面向下和向内延伸,使得它们在拉制容器下方的边缘处结合。两个流动玻璃表面在此边缘处结合并熔合起来,形成单独的流动板材。所述熔合下拉法的优点在于,由于从沟槽溢流的两块玻璃膜会熔合在一起,因此制得的玻璃板的任一外表面都没有与设备的任意部件相接触。因此,表面性质不会受所述接触的影响。
狭缝拉制法与熔合拉制法不同。在此方法中,将熔融的原料玻璃提供给拉制容器。所述拉制容器的底部具有开放的狭缝,所述开放狭缝具有沿着狭缝的长度延伸的喷嘴。熔融的玻璃流过所述狭缝/喷嘴,以连续的板材的形式通过该狭缝/喷嘴下拉,并进入退火区。相较于熔合拉制法,所述狭缝拉制法提供了更薄的板材,这是因为通过狭缝仅仅拉制了单块板材,而不是像熔合下拉法那样形成了熔合在一起的两块板材。
为了能够适应下拉工艺,本发明所述的硼铝硅酸盐玻璃具有高液相线粘度。在一个实施方式中,所述玻璃的液相线粘度为50000泊或更大,例如150000泊或更大,例如200000泊或更大,例如250000泊或更大,例如300000泊或更大,例如350000泊或更大,例如400000泊或更大,例如500000泊或更大。一些示例性玻璃的液相线粘度与液相线温度和软化点之间的差异密切相关。
在一个实施方式中,所述玻璃的应变点为535℃或更高,例如540℃或更高,例如560℃或更高,例如应变点为570℃或更高,例如580℃或更高。在一些实施方式中,所述玻璃的热膨胀系数等于或大于50×10-7,例如等于或大于60×10-7,例如等于或大于70×10-7,例如等于或大于80×10-7。在一个实施方式中,所述玻璃的热膨胀系数为50x 10-7-90x 10-7
在一个实施方式中,所述玻璃的应变点等于或高于535℃,热膨胀系数等于或大于50x 10-7,液相线粘度等于或大于150000泊。在一个实施方式中,具有这些性质的玻璃是可熔合成形的。
在一个实施方式中,所述玻璃的热膨胀系数等于或大于50x 10-7,应变点等于或高于535℃。在一个实施方式中,所述玻璃的热膨胀系数等于或大于50x 10-7,应变点等于或高于540℃。在一个实施方式中,所述玻璃的热膨胀系数等于或大于60x 10-7,应变点等于或高于560℃。在一个实施方式中,所述玻璃的热膨胀系数等于或大于60x 10-7,应变点等于或高于580℃。在一个实施方式中,所述玻璃的热膨胀系数等于或大于50x 10-7,应变点等于或高于570℃。在一个实施方式中,所述玻璃的热膨胀系数等于或大于70x 10-7,应变点等于或高于570℃。所述玻璃的实施方式可具有所述范围内的性质的一些组合。应当理解,本文没有列出所有可能的组合。
根据一个实施方式,所述玻璃在包含一种或多种碱金属离子盐的盐浴中进行离子交换。所述玻璃可通过离子交换改变其机械性质。例如,较小的碱金属离子如锂或钠可在包含一种或多种较大的碱金属离子如钠、钾、铷或铯的熔融盐中进行离子交换。若在充分低于应变点的温度下进行足够长的时间,则会形成扩散分布,其中较大的碱金属从盐浴移动到玻璃表面,而较小的离子从玻璃内部移动到盐浴中。将样品取出时,其表面将受到压缩,从而产生改进的抗损韧性。在玻璃要处于恶劣环境条件的情况下,如光伏网遭受冰雹的情况下,这种韧性是有利的。玻璃中已存在的大碱金属也可在盐浴中交换成较小的碱金属。若在接近应变点的温度下进行此项操作,并且取出玻璃后重新将其表面快速加热至高温,然后快速冷却,则玻璃表面将具有由热回火带来的良好压缩应力。这也能提供针对恶劣环境条件的保护。本领域的技术人员会明白,任何单价阳离子,包括铜、银、铊等,都可用来交换玻璃中已经存在的碱金属,这些处理也能为最终用途提供具有潜在价值的特性,例如在照明应用中引入颜色,或者引入具有升高的折射率的层,用于捕获光。
根据另一个实施方式,可以通过浮法玻璃领域已知的方式,通过浮法对玻璃成形。
在一个实施方式中,所述玻璃是板材的形式。所述板材形式的玻璃可以进行热回火。
在一个实施方式中,有机发光二极管器件包含板材形式的玻璃。
根据一个实施方式,所述玻璃是透明的。根据一个实施方式,所述玻璃板是透明的。
图1是根据一个实施方式的光伏器件的特征100的示意图。在一个实施方式中,所述光伏器件包含板材形式的玻璃。所述光伏器件可以包含一块以上的玻璃板,例如作为基板和/或覆板。在一个实施方式中,所述光伏器件包含作为基板和/或覆板的玻璃板10、与基板相邻的导电材料12以及与导电材料相邻的活性光伏介质16。在一个实施方式中,所述活性光伏介质包含二硒化铜铟镓(CIGS)层。在一个实施方式中,所述活性光伏介质包含碲化镉(CdTe)层。在一个实施方式中,所述活性光伏介质是CIGS层。在一个实施方式中,所述活性光伏介质是碲化镉(CdTe)层。
根据一个实施方式,所述光伏器件还包含位于覆板或基板与活性光伏介质之间的阻挡层14。在一个实施方式中,所述光伏器件还包含位于覆板或基板与透明导电氧化物(TCO)层之间或者与覆板或基板和透明导电氧化物(TCO)层相邻的阻挡层,其中TCO层位于活性光伏介质与阻挡层之间或者与活性光伏介质和阻挡层相邻。TCO可存在于包含CdTe功能层的光伏器件中。在一个实施方式中,阻挡层直接设置在玻璃上。阻挡层可影响碱金属离子从玻璃到该器件的其它层例如活性光伏介质的迁移,例如增加迁移、减少迁移或使迁移计量进行。
在一个实施方式中,所述玻璃板是透明的。在一个实施方式中,所述作为基板和/或覆板的玻璃板是透明的。
根据一些实施方式,所述玻璃板的厚度等于或小于4.0毫米,例如等于或小于3.5毫米,例如等于或小于3.2毫米,例如等于或小于3.0毫米,例如等于或小于2.5毫米,例如等于或小于2.0毫米,例如等于或小于1.9毫米,例如等于或小于1.8毫米,例如等于或小于1.5毫米,例如等于或小于1.1毫米,例如0.5-2.0毫米,例如0.5-1.1毫米,例如0.7-1.1毫米。尽管这些是示例性的厚度,但是玻璃板的厚度可以包括0.1毫米至最高达4.0毫米(包括4.0毫米)范围内任意包含小数位的数值。
在一个实施方式中,电致变色器件包含板材形式的玻璃。所述电致变色器件可以是例如电致变色窗。在一个实施方式中,所述电致变色窗包含一块或多块玻璃板,如单格、双格或三格窗。
因具有较高的应变点,本发明的可熔合成形玻璃代表着用于CIGS光伏模块的占有优势的基材。当用熔合法制造时,其相对于浮法玻璃的优良表面质量同样进一步改进了光伏模块的制造工艺。本发明的优选实施方式的特征在于超过400000泊的液相线粘度,从而能够制造一些模块制造商所需要的较厚的玻璃板。
实施例
下面是根据本发明的一个实施方式制造本发明的示例性玻璃样品的实施例,如表1所示。该组成对应于表3所示的实施例编号1。
表1
氧化物 摩尔%
SiO2 63.64
Al2O3 13.00
MgO 3.14
CaO 3.15
SrO 1.56
Na2O 11.32
K2O 4.09
SnO2 0.10
在一些实施方式中,总量之和不是100%,因为会存在某些浓度无法忽略的不确定的元素。
称取表2所示的批料,加入4升的塑料容器中:
表2
应当注意,根据来源,在批料中,石灰石可以包含某些不确定的元素和/或各种量的一种或多种氧化物,例如MgO和/或BaO。优选对砂子进行精选,使得至少80质量%可以通过60目,例如80目,例如100目的筛网。在此实施例中,加入的SnO2以10重量%的水平与砂子预先混合,以确保与其它组分均一混合。将装有批料的瓶子安装在滚筒上,对批料进行混合,由此制得均一的批料,将柔软的团块打碎。将混合的批料转移到1800立方厘米的铂坩锅中,放入高温陶瓷支架中。将位于支架中的铂坩锅放入保持在1630℃的碳硅棒加热炉内。16小时之后,取出所述坩锅和支架,将玻璃熔体倒在冷的表面上,例如倒在钢板上,形成圆片,然后转移到保持在640℃的退火器中。所述玻璃圆片在退火器温度下保持2小时,然后以1℃/分钟的速率冷却至室温。
表3、表4、表5、表6、表7、表8、表9、表10、表11和表12显示了根据本发明实施方式的示例性的玻璃,这些玻璃根据以上实施例制备。一些示例性玻璃的性质数据也显示于表3、表4、表5、表6、表7、表8、表9、表10、表11和表12中。表中,Tstr(℃)是应变点,它是粘度等于1014.7泊时的温度,通过弯曲梁法或纤维伸长法测量。Tann(℃)是退火点,它是粘度等于1013.18泊时的温度,通过弯曲梁法或纤维伸长法测量。Ts(℃)是软化点,它是粘度等于107.6泊时的温度,通过弯曲梁法或纤维伸长法测量。表中α(10-7/℃)或a(10-7/℃)是热膨胀系数(CTE),它是0-300℃或25-300℃的尺寸变化量,具体是哪种情况取决于测量方法。CTE通常用膨胀法测量。ρ(克/立方厘米)是用阿基米德法(ASTM C693)测量的密度。T200(℃)是200泊(P)温度。这是熔体粘度为200P时的温度,通过HTV(高温粘度)测量法测量,该方法使用同心柱粘度计。Tliq(℃)是液相线温度。这是在标准梯度舟液相线测量法(standard gradientboat liquidus measurement)(ASTM C829-81)中观察到第一粒晶体时的温度。此项测试一般进行72小时,但可通过牺牲精度、增加产出量缩短至24小时(更短时间的测试会低估液相线温度)。ηliq(℃)是液相线粘度。这是对应于液相线温度的熔体粘度。
表3
表4
表5
表6
表7
表8
表9
表10
表11
表12
对本领域的技术人员而言显而易见的是,可以在不偏离本发明的精神或范围的情况下对本发明进行各种修改和变动。因此,本发明应涵盖对本发明的修改和变动,只要这些修改和变动在所附权利要求及其等同方案的范围之内。

Claims (20)

1.一种玻璃,以重量百分数表示,它基本上由以下组分构成:
50-72%的SiO2
大于15至25%的Al2O3
0-10%的B2O3
共计10-25%的M2O;
2-25%的RO;以及
0-3%的SnO2
其中M是选自Na、K、Li、Rb和Cs的碱金属,所述玻璃包含至少9重量%的Na2O和小于或等于5重量%的K2O;R是选自Mg、Ca、Ba和Sr的碱土金属,MgO小于2.5%,
其中所述玻璃的应变点为535℃或更高,热膨胀系数为50x 10-7或更大,液相线粘度为150000泊或更大。
2.如权利要求1所述的玻璃,其特征在于,所述玻璃包含0-3重量%的K2O。
3.如权利要求1所述的玻璃,其特征在于,所述玻璃基本上不含K2O。
4.如权利要求1所述的玻璃,其特征在于,所述玻璃包含2至小于14重量%的RO。
5.如权利要求1所述的玻璃,其特征在于,所述玻璃包含55-72%的SiO2
6.如权利要求1所述的玻璃,其特征在于,所述玻璃包含9-17%的Na2O。
7.如权利要求1所述的玻璃,其特征在于,所述玻璃不含ZrO2
8.如权利要求1所述的玻璃,其特征在于,所述玻璃由SiO2、Al2O3、M2O、RO和0-3重量%的SnO2组成。
9.如权利要求1所述的玻璃,其特征在于,所述玻璃由SiO2、Al2O3、M2O、B2O3、RO和0-3重量%的SnO2组成。
10.如权利要求1所述的玻璃,其特征在于,所述玻璃基本上不含BaO。
11.如权利要求1所述的玻璃,其特征在于,所述玻璃的应变点为560℃或更高。
12.如权利要求3所述的玻璃,其特征在于,所述玻璃包含2至小于14重量%的RO。
13.如权利要求3所述的玻璃,其特征在于,所述玻璃包含55-72%的SiO2
14.如权利要求3所述的玻璃,其特征在于,所述玻璃包含9-17%的Na2O。
15.如权利要求3所述的玻璃,其特征在于,所述玻璃不含ZrO2
16.如权利要求3所述的玻璃,其特征在于,所述玻璃基本上不含BaO。
17.如权利要求3所述的玻璃,其特征在于,所述玻璃的应变点为560℃或更高。
18.一种光伏器件,它包含:基板或覆板;以及与基板或覆板相邻的活性光伏介质,其中所述基板或覆板呈包含权利要求1的玻璃组合物的板材的形式。
19.如权利要求18所述的光伏器件,其特征在于,所述活性光伏介质包含二硒化铜铟镓。
20.如权利要求18所述的光伏器件,其特征在于,所述活性光伏介质包含碲化镉。
CN201710691512.0A 2009-07-24 2010-07-23 包含氧化硅和钠的可熔合成形玻璃 Pending CN107285624A (zh)

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Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7593154B2 (en) * 2005-10-11 2009-09-22 Sage Electrochromics, Inc. Electrochromic devices having improved ion conducting layers
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
FR2948356B1 (fr) 2009-07-22 2011-08-19 Saint Gobain Dispositif electrochrome
US8647995B2 (en) * 2009-07-24 2014-02-11 Corsam Technologies Llc Fusion formable silica and sodium containing glasses
DE102009044142A1 (de) * 2009-09-30 2011-03-31 Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg Dünnschicht-Bauelement auf Glas, ein Verfahren zu dessen Herstellung und dessen Verwendung
EP2492247A1 (en) * 2009-10-20 2012-08-29 Asahi Glass Company, Limited Glass sheet for cu-in-ga-se solar cells, and solar cells using same
US9302937B2 (en) 2010-05-14 2016-04-05 Corning Incorporated Damage-resistant glass articles and method
KR20130072187A (ko) * 2010-05-19 2013-07-01 아사히 가라스 가부시키가이샤 화학 강화용 유리 및 디스플레이 장치용 유리판
CN102933515A (zh) * 2010-06-03 2013-02-13 旭硝子株式会社 玻璃基板及其制造方法
DE102010023366B4 (de) * 2010-06-10 2017-09-21 Schott Ag Verwendung von Gläsern für Photovoltaik-Anwendungen
JP2012036074A (ja) * 2010-07-12 2012-02-23 Nippon Electric Glass Co Ltd ガラス板
US8492297B2 (en) * 2010-08-25 2013-07-23 Sage Electrochromics, Inc. Silica soda lime glass composition and use thereof
JP5909937B2 (ja) * 2010-09-09 2016-04-27 日本電気硝子株式会社 半導体パッケージ用カバーガラス及びその製造方法
US9434644B2 (en) * 2010-09-30 2016-09-06 Avanstrate Inc. Cover glass and method for producing cover glass
JP5834793B2 (ja) * 2010-12-24 2015-12-24 旭硝子株式会社 化学強化ガラスの製造方法
JP5612233B1 (ja) * 2010-12-24 2014-10-22 旭硝子株式会社 化学強化用ガラス
FR2972446B1 (fr) 2011-03-09 2017-11-24 Saint Gobain Substrat pour cellule photovoltaique
WO2012131824A1 (ja) * 2011-03-31 2012-10-04 日本板硝子株式会社 化学強化に適したガラス組成物、および化学強化ガラス物品
TWI572480B (zh) 2011-07-25 2017-03-01 康寧公司 經層壓及離子交換之強化玻璃疊層
US9517966B2 (en) 2011-10-25 2016-12-13 Corning Incorporated Glass compositions with improved chemical and mechanical durability
RU2691186C2 (ru) 2011-10-25 2019-06-11 Корнинг Инкорпорейтед Щелочноземельные алюмосиликатные стеклянные композиции с улучшенной химической и механической стойкостью
EP2683666B1 (en) 2011-10-25 2017-12-13 Corning Incorporated Glass compositions with improved chemical and mechanical durability
US10350139B2 (en) 2011-10-25 2019-07-16 Corning Incorporated Pharmaceutical glass packaging assuring pharmaceutical sterility
EP2771294B1 (en) 2011-10-25 2017-12-13 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
KR20140088109A (ko) * 2011-10-31 2014-07-09 아사히 가라스 가부시키가이샤 유리 기판 및 그 제조 방법
KR101930681B1 (ko) * 2011-11-18 2018-12-18 에이지씨 가부시키가이샤 화학 강화용 유리
IN2014DN07444A (zh) 2012-02-29 2015-04-24 Corning Inc
US9701580B2 (en) * 2012-02-29 2017-07-11 Corning Incorporated Aluminosilicate glasses for ion exchange
US8746010B2 (en) * 2012-03-12 2014-06-10 Corning Incorporated Methods for reducing zirconia defects in glass sheets
US10273048B2 (en) 2012-06-07 2019-04-30 Corning Incorporated Delamination resistant glass containers with heat-tolerant coatings
CN110698059B (zh) 2012-10-04 2022-07-29 康宁股份有限公司 由光敏玻璃制成的压缩应力化层合玻璃制品及制备所述制品的方法
CN111763009A (zh) * 2012-10-04 2020-10-13 康宁股份有限公司 具有玻璃层和玻璃陶瓷层的制品以及该制品的制造方法
US11352287B2 (en) 2012-11-28 2022-06-07 Vitro Flat Glass Llc High strain point glass
US20140238481A1 (en) * 2013-02-28 2014-08-28 Corning Incorporated Sodium out-flux for photovoltaic cigs glasses
US9707155B2 (en) 2013-04-24 2017-07-18 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9849066B2 (en) 2013-04-24 2017-12-26 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9603775B2 (en) 2013-04-24 2017-03-28 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9717649B2 (en) 2013-04-24 2017-08-01 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9707153B2 (en) 2013-04-24 2017-07-18 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9707154B2 (en) 2013-04-24 2017-07-18 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9700486B2 (en) 2013-04-24 2017-07-11 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9717648B2 (en) 2013-04-24 2017-08-01 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9700485B2 (en) 2013-04-24 2017-07-11 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9839579B2 (en) 2013-04-24 2017-12-12 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
US9713572B2 (en) 2013-04-24 2017-07-25 Corning Incorporated Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients
KR102225583B1 (ko) * 2013-04-29 2021-03-10 코닝 인코포레이티드 광기전력 모듈 패키지
US9257585B2 (en) * 2013-08-21 2016-02-09 Siva Power, Inc. Methods of hermetically sealing photovoltaic modules using powder consisting essentially of glass
MY175492A (en) 2013-09-20 2020-06-30 Lintec Corp Curable composition, curing product, and method for using curable composition
DE102013019003A1 (de) * 2013-11-13 2015-05-13 Taiwan Glass Ind. Corp. Alkali-Alumino-Silikatglas
JP6976057B2 (ja) * 2013-11-20 2021-12-01 コーニング インコーポレイテッド 耐スクラッチアルミノホウケイ酸ガラス
CN115504681A (zh) 2014-10-07 2022-12-23 康宁股份有限公司 具有确定的应力分布的玻璃制品及其生产方法
EP3304219B1 (en) * 2015-06-05 2023-09-27 Shell Internationale Research Maatschappij B.V. System and method for superior performance with respect to best performance values in model predictive control applications
DE102015116097B4 (de) * 2015-09-23 2017-09-21 Schott Ag Chemisch beständiges Glas und dessen Verwendung
WO2017066243A1 (en) * 2015-10-14 2017-04-20 Corning Incorporated Laminated glass article with determined stress profile and method for forming the same
KR102642779B1 (ko) * 2015-10-22 2024-03-05 코닝 인코포레이티드 고 투과 유리
CN105565647A (zh) * 2015-12-14 2016-05-11 厦门博恩思应用材料科技有限公司 一种不完全熔合玻璃组及其制备方法
US10899653B2 (en) 2017-01-09 2021-01-26 Corning Incorporated Ion-exchangeable glass with low coefficient of thermal expansion
US11214512B2 (en) 2017-12-19 2022-01-04 Owens Coming Intellectual Capital, LLC High performance fiberglass composition
GB201806356D0 (en) * 2018-04-18 2018-05-30 Alzahrani Ali Saleh A Chemically strengthened glass-ceramics
WO2021119750A1 (en) * 2019-12-18 2021-06-24 Macquarie University Aluminosilicate glass
US20240300848A1 (en) * 2021-08-17 2024-09-12 Nippon Electric Glass Co., Ltd. Glass substrate for space-based solar power generation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465381B1 (en) * 1999-07-23 2002-10-15 Schott Glas Alkali-free aluminoborosilicate glass, its use and process for its preparation
JP2003040647A (ja) * 2001-07-25 2003-02-13 Kyocera Corp シリコン被覆用ガラス組成物およびそれを用いたシリコンと接触する絶縁皮膜並びにシリコンデバイス
CN1648084A (zh) * 2005-02-28 2005-08-03 常熟市幸福玻璃建材有限公司 太阳能光伏电池组件的盖板玻璃的加工工艺
WO2008149858A1 (ja) * 2007-06-07 2008-12-11 Nippon Electric Glass Co., Ltd. 強化ガラス基板及びその製造方法

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156755A (en) 1978-04-19 1979-05-29 Ppg Industries, Inc. Lithium containing ion exchange strengthened glass
US4298389A (en) * 1980-02-20 1981-11-03 Corning Glass Works High transmission glasses for solar applications
JP2743333B2 (ja) 1989-10-31 1998-04-22 日本電気硝子株式会社 基板用ガラス
US5631195A (en) * 1994-09-14 1997-05-20 Asahi Glass Company Ltd. Glass composition and substrate for plasma display
JP3831957B2 (ja) 1994-09-14 2006-10-11 旭硝子株式会社 ガラス組成物及びプラズマディスプレー用基板
JPH0936400A (ja) * 1995-07-25 1997-02-07 Asahi Glass Co Ltd 太陽電池用ガラス基板及びその製造方法
US5674790A (en) 1995-12-15 1997-10-07 Corning Incorporated Strengthening glass by ion exchange
JPH10152339A (ja) 1996-09-27 1998-06-09 Nippon Sheet Glass Co Ltd 耐熱性ガラス組成物
JP3904158B2 (ja) 1996-11-27 2007-04-11 Hoya株式会社 テクスチャー付磁気ディスク用ガラス基板の製造方法
US6060168A (en) 1996-12-17 2000-05-09 Corning Incorporated Glasses for display panels and photovoltaic devices
US5972460A (en) 1996-12-26 1999-10-26 Hoya Corporation Information recording medium
JPH10241134A (ja) 1996-12-26 1998-09-11 Hoya Corp 情報記録媒体用ガラス基板及びこれを用いた磁気記録媒体
FR2758550B1 (fr) 1997-01-17 1999-02-12 Saint Gobain Vitrage Compositions de verre silico-sodo-calcique et leurs applications
JPH11135819A (ja) 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd 化合物薄膜太陽電池
JPH11180727A (ja) 1997-12-22 1999-07-06 Central Glass Co Ltd 表示装置用基板ガラス組成物
JPH11180728A (ja) 1997-12-22 1999-07-06 Central Glass Co Ltd ディスプレイ装置用基板ガラス組成物
JP4320823B2 (ja) 1998-02-27 2009-08-26 旭硝子株式会社 基板用ガラス組成物
JPH11302032A (ja) * 1998-04-17 1999-11-02 Nippon Sheet Glass Co Ltd ガラス組成物およびそれを用いた情報記録媒体用基板
JPH11310433A (ja) 1998-04-27 1999-11-09 Central Glass Co Ltd 表示装置用基板ガラス
JPH11335133A (ja) 1998-05-27 1999-12-07 Central Glass Co Ltd 表示装置用基板ガラス
US6319867B1 (en) * 1998-11-30 2001-11-20 Corning Incorporated Glasses for flat panel displays
US6207603B1 (en) * 1999-02-05 2001-03-27 Corning Incorporated Solar cell cover glass
DE60006176T2 (de) 1999-03-25 2004-04-22 Central Glass Co., Ltd., Ube Glaszusammensetzung, durch Ionenaustausch verstärkter Glasgegenstand und Verfahren zu dessen Herstellung
JP3959588B2 (ja) 1999-05-13 2007-08-15 日本板硝子株式会社 情報記録媒体用ガラス基板、情報記録媒体用ガラス基板の製造方法及び情報記録媒体
DE19939789A1 (de) * 1999-08-21 2001-02-22 Schott Glas Alkalifreie Aluminoborosilicatgläser und deren Verwendungen
DE19942259C1 (de) * 1999-09-04 2001-05-17 Schott Glas Erdalkalialuminoborosilicatglas und dessen Verwendungen
DE10000836B4 (de) 2000-01-12 2005-03-17 Schott Ag Alkalifreies Aluminoborosilicatglas und dessen Verwendungen
DE10005088C1 (de) 2000-02-04 2001-03-15 Schott Glas Alkalihaltiges Aluminoborosilicatglas und seine Verwendung
JP2002003241A (ja) 2000-06-19 2002-01-09 Central Glass Co Ltd プレス成形用ガラスおよび情報記録媒体用基板ガラス
JP2002025762A (ja) 2000-07-04 2002-01-25 Nippon Electric Glass Co Ltd 無機elディスプレイガラス基板
JP2002053340A (ja) 2000-08-09 2002-02-19 Nippon Electric Glass Co Ltd 無機elディスプレイガラス基板
JP2002175844A (ja) * 2000-12-07 2002-06-21 Seiko Epson Corp 太陽電池
JP2002174810A (ja) 2000-12-08 2002-06-21 Hoya Corp ディスプレイ用ガラス基板及びその製造方法並びにこれを用いたディスプレイ
DE10064804C2 (de) * 2000-12-22 2003-03-20 Schott Glas Alkalifreie Aluminoborosilicatgläser und ihre Verwendung
JP3702360B2 (ja) 2001-01-04 2005-10-05 日本板硝子株式会社 化学強化用のガラス素板の製造方法
JP4785274B2 (ja) * 2001-05-29 2011-10-05 日本板硝子株式会社 ガラス物品およびそれを用いた磁気記録媒体用ガラス基板
JP3995902B2 (ja) * 2001-05-31 2007-10-24 Hoya株式会社 情報記録媒体用ガラス基板及びそれを用いた磁気情報記録媒体
US6753279B2 (en) * 2001-10-30 2004-06-22 Corning Incorporated Glass composition for display panels
JP2003212591A (ja) * 2002-01-25 2003-07-30 Hoya Corp 陰極線管パネル用母材ガラス、陰極線管用パネルおよびその製造方法
JP2003261352A (ja) 2002-03-08 2003-09-16 Asahi Techno Glass Corp ディスプレイ用ガラスおよびディスプレイ用ガラス部品
JP4446683B2 (ja) * 2002-05-24 2010-04-07 Hoya株式会社 磁気記録媒体用ガラス基板
US7309671B2 (en) 2002-05-24 2007-12-18 Nippon Sheet Glass Co., Ltd. Glass composition, glass article, glass substrate for magnetic recording media, and method for producing the same
WO2004009504A1 (ja) 2002-07-24 2004-01-29 Nippon Sheet Glass Company, Limited レーザ加工用ガラス
US6992030B2 (en) * 2002-08-29 2006-01-31 Corning Incorporated Low-density glass for flat panel display substrates
JP2004131314A (ja) 2002-10-09 2004-04-30 Asahi Glass Co Ltd 透明導電膜付き化学強化ガラス基板、およびその製造方法
JP4320772B2 (ja) 2003-02-13 2009-08-26 日本電気硝子株式会社 フラットパネルディスプレイ装置用ガラス基板
JP4656863B2 (ja) * 2003-06-06 2011-03-23 Hoya株式会社 ジルコニウムを含むガラス組成物、化学強化ガラス物品、磁気記録媒体用ガラス基板、およびガラス板の製造方法
US7273668B2 (en) 2003-06-06 2007-09-25 Hoya Corporation Glass composition including zirconium, chemically strengthened glass article, glass substrate for magnetic recording media, and method of producing glass sheet
JP2006083045A (ja) 2004-09-17 2006-03-30 Hitachi Ltd ガラス部材
EP1810344A2 (en) * 2004-11-10 2007-07-25 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
JP4977965B2 (ja) 2005-05-02 2012-07-18 旭硝子株式会社 無アルカリガラスおよびその製造方法
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
JP5232362B2 (ja) * 2006-04-17 2013-07-10 株式会社カネカ 集積化薄膜光電変換装置の製造方法および、その製造方法で得られうる集積化薄膜光電変換装置。
SG10201606460SA (en) 2006-06-08 2016-09-29 Hoya Corp Glass for use in substrate for information recording medium, substrate for information recording medium and information recording medium, and their manufacturing method
DE102006042620B4 (de) 2006-09-04 2012-01-26 Schott Ag Verwendung eines Aluminoborosilikatglases als Substratglas
JP5071878B2 (ja) 2006-09-12 2012-11-14 日本電気硝子株式会社 無アルカリガラスおよびこれを用いた無アルカリガラス基板
JP5808069B2 (ja) * 2007-02-16 2015-11-10 日本電気硝子株式会社 太陽電池用ガラス基板
KR20080079058A (ko) * 2007-02-26 2008-08-29 엘지전자 주식회사 박막형 태양전지 모듈과 그의 제조방법
JP5483821B2 (ja) * 2007-02-27 2014-05-07 AvanStrate株式会社 表示装置用ガラス基板および表示装置
US7666511B2 (en) * 2007-05-18 2010-02-23 Corning Incorporated Down-drawable, chemically strengthened glass for cover plate
JP5234387B2 (ja) 2007-06-12 2013-07-10 日本電気硝子株式会社 無アルカリガラスおよび無アルカリガラス基板並びにその製造方法
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
JP5467490B2 (ja) * 2007-08-03 2014-04-09 日本電気硝子株式会社 強化ガラス基板の製造方法及び強化ガラス基板
JP5339173B2 (ja) * 2007-09-27 2013-11-13 日本電気硝子株式会社 強化ガラス基板及びガラス並びに強化ガラス基板の製造方法
JP5103145B2 (ja) * 2007-11-15 2012-12-19 シャープ株式会社 光電変換装置用基板およびそれを用いた光電変換装置
AT10578U1 (de) 2007-12-18 2009-06-15 Plansee Metall Gmbh Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht
DE202009018722U1 (de) * 2008-02-26 2012-11-21 Corning Inc. Läutermittel für Silikatgläser
US8232218B2 (en) * 2008-02-29 2012-07-31 Corning Incorporated Ion exchanged, fast cooled glasses
CN102007079A (zh) * 2008-04-21 2011-04-06 旭硝子株式会社 显示面板用玻璃板、其制造方法及tft面板的制造方法
US20110094584A1 (en) * 2008-06-17 2011-04-28 Nippon Electric Glass Co., Ltd. Solar cell substrate and oxide semiconductor electrode for dye-sensitized solar cell
JP5867953B2 (ja) * 2008-06-27 2016-02-24 日本電気硝子株式会社 強化ガラスおよび強化用ガラス
JP5614607B2 (ja) 2008-08-04 2014-10-29 日本電気硝子株式会社 強化ガラスおよびその製造方法
JP5644043B2 (ja) 2008-11-26 2014-12-24 横河電機株式会社 波長校正装置
US8647995B2 (en) * 2009-07-24 2014-02-11 Corsam Technologies Llc Fusion formable silica and sodium containing glasses
US8802581B2 (en) 2009-08-21 2014-08-12 Corning Incorporated Zircon compatible glasses for down draw
JP2011226137A (ja) 2010-04-19 2011-11-10 Okabe Co Ltd 入隅部補強金物
CN102933515A (zh) 2010-06-03 2013-02-13 旭硝子株式会社 玻璃基板及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465381B1 (en) * 1999-07-23 2002-10-15 Schott Glas Alkali-free aluminoborosilicate glass, its use and process for its preparation
JP2003040647A (ja) * 2001-07-25 2003-02-13 Kyocera Corp シリコン被覆用ガラス組成物およびそれを用いたシリコンと接触する絶縁皮膜並びにシリコンデバイス
CN1648084A (zh) * 2005-02-28 2005-08-03 常熟市幸福玻璃建材有限公司 太阳能光伏电池组件的盖板玻璃的加工工艺
WO2008149858A1 (ja) * 2007-06-07 2008-12-11 Nippon Electric Glass Co., Ltd. 強化ガラス基板及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
王君一: "《太阳能利用技术》", 31 January 2008, 金盾出版社 *

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AU2010275513B2 (en) 2015-07-02
KR101426174B1 (ko) 2014-08-01
RU2012106650A (ru) 2013-08-27
US20140150867A1 (en) 2014-06-05
JP2015129083A (ja) 2015-07-16
EP2456727A1 (en) 2012-05-30
US20110017297A1 (en) 2011-01-27
SG178099A1 (en) 2012-03-29
CA2769014A1 (en) 2011-01-27
IN2012DN00690A (zh) 2015-06-19
JP2013500229A (ja) 2013-01-07
KR20120049296A (ko) 2012-05-16
JP6193280B2 (ja) 2017-09-06
AU2010275513A1 (en) 2012-03-01
MX2012001054A (es) 2012-06-12
TWI534115B (zh) 2016-05-21

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