JP6362636B2 - フュージョン成形可能なナトリウム不含有ガラス - Google Patents
フュージョン成形可能なナトリウム不含有ガラス Download PDFInfo
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- JP6362636B2 JP6362636B2 JP2016035096A JP2016035096A JP6362636B2 JP 6362636 B2 JP6362636 B2 JP 6362636B2 JP 2016035096 A JP2016035096 A JP 2016035096A JP 2016035096 A JP2016035096 A JP 2016035096A JP 6362636 B2 JP6362636 B2 JP 6362636B2
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- 239000011521 glass Substances 0.000 title claims description 123
- 230000004927 fusion Effects 0.000 title claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 10
- 239000002346 layers by function Substances 0.000 claims description 8
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000011734 sodium Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000003513 alkali Substances 0.000 description 6
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 6
- 239000006060 molten glass Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000003280 down draw process Methods 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 238000003286 fusion draw glass process Methods 0.000 description 4
- 150000002500 ions Chemical group 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000003283 slot draw process Methods 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 238000006124 Pilkington process Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 235000019738 Limestone Nutrition 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical group 0.000 description 1
- -1 alkane ions Chemical class 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007571 dilatometry Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000005400 gorilla glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000006028 limestone Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000000196 viscometry Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/078—Glass compositions containing silica with 40% to 90% silica, by weight containing an oxide of a divalent metal, e.g. an oxide of zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
Description
35から75パーセントのSiO2、
0から15パーセントのAl2O3、
0から20パーセントのB2O3、
3から30パーセントのK2O、
0から15パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
を含むガラスであって、Na2Oを実質的に含まないガラスである。
35から75パーセントのSiO2、
0超から15パーセントのAl2O3、
0超から20パーセントのB2O3、
3から30パーセントのK2O、
0超から15パーセントのMgO、
0超から10パーセントのCaO、
0超から12パーセントのSrO、
0超から40パーセントのBaO、および
0超から1パーセントのSnO2、
を含み、Na2Oを実質的に含まない。
39から75パーセントのSiO2、
2から13パーセントのAl2O3、
1から11パーセントのB2O3、
3から30パーセントのK2O、
0から7パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
を含み、Na2Oを実質的に含まない。
50から70パーセントのSiO2、
2から13パーセントのAl2O3、
1から11パーセントのB2O3、
3から30パーセントのK2O、
0から7パーセントのMgO、
0から7パーセントのCaO、
0から5パーセントのSrO、
1から40パーセントのBaO、および
0から0.3パーセントのSnO2、
を含み、Na2Oを実質的に含まない。
35から75パーセントのSiO2、
0から15パーセントのAl2O3、
0から20パーセントのB2O3、
3から30パーセントのK2O、
0から15パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
から実質的になるガラスであって、Na2Oを実質的に含まないガラスである。
45から75パーセントのSiO2、
3から15パーセントのAl2O3、
0から20パーセントのB2O3、
14から25パーセントのK2O、
0から15パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
を含むガラスであって、Na2Oを実質的に含まず、フュージョン成形可能であり、540℃以上の歪み点、50×10-7以上の熱膨張係数、1630℃未満のT200、および150,000ポアズ以上の液相線粘度を有するガラスである。
35から75パーセントのSiO2、
0から15パーセントのAl2O3、
0から20パーセントのB2O3、
3から30パーセントのK2O、
0から15パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
を含むガラスであって、Na2Oを実質的に含まないガラスである。
45から75パーセントのSiO2、
3から15パーセントのAl2O3、
0から20パーセントのB2O3、
14から25パーセントのK2O、
0から15パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
を含むガラスであって、Na2Oを実質的に含まず、フュージョン成形可能であり、540℃以上の歪み点、50×10-7以上の熱膨張係数、1630℃未満のT200、および150,000ポアズ以上の液相線粘度を有するガラスである。
45から75パーセントのSiO2、
3から15パーセントのAl2O3、
0から20パーセントのB2O3、
14から25パーセントのK2O、
0から15パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
から実質的になり、Na2Oを実質的に含まず、フュージョン成形可能であり、540℃以上の歪み点、50×10-7以上の熱膨張係数、1630℃未満のT200、および150,000ポアズ以上の液相線粘度を有する。
35から75パーセントのSiO2、
0から15パーセントのAl2O3、
0から20パーセントのB2O3、
3から30パーセントのK2O、
0から15パーセントのMgO、
0から10パーセントのCaO、
0から12パーセントのSrO、
0から40パーセントのBaO、および
0から1パーセントのSnO2、
から実質的になるガラスであって、Na2Oを実質的に含まないガラスである。
Claims (7)
- 質量パーセントで、
45から75パーセントのSiO2、
3から15パーセントのAl2O3、
1.56から20パーセントのB2O3、
21から25パーセントのK2O、
0から6.93パーセントのMgO、
0から10パーセントのCaO、
0から5.63パーセントのSrO、
0から3.73パーセントのBaO、および
0から1パーセントのSnO2、
を含むガラスであって、Na2Oを実質的に含まず、フュージョン成形可能であり、540℃以上の歪み点、50×10-7以上の熱膨張係数、1630℃未満のT200、および150,000ポアズ以上の液相線粘度を有し、MgO、CaO、SrO、又はそれらの組合せの下限値が0パーセント超である、ガラス。 - 質量パーセントで、
45から75パーセントのSiO2、
3から15パーセントのAl2O3、
1.56から20パーセントのB2O3、
17.2から30パーセントのK2O、
0から6.93パーセントのMgO、
0から10パーセントのCaO、
0から5.63パーセントのSrO、
0から3.73パーセントのBaO、および
0から1パーセントのSnO2、
を含むガラスであって、Na2Oを実質的に含まず、フュージョン成形可能であり、540℃以上の歪み点、50×10-7以上の熱膨張係数、1630℃未満のT200、および150,000ポアズ以上の液相線粘度を有し、MgO、CaO、SrO、又はそれらの組合せの下限値が0パーセント超である、ガラス。 - 前記ガラスが板の形態であることを特徴とする請求項1または2記載のガラス。
- 前記板が、0.5mmから3.0mmまでの範囲の厚さを有することを特徴とする請求項3記載のガラス。
- 請求項1または2記載のガラスを含む光起電装置。
- 前記ガラスに隣接した、二セレン化銅インジウムガリウムまたはテルル化カドミウムを含む機能層を含むことを特徴とする請求項5記載の光起電装置。
- 前記ガラスと前記機能層との間に配置されたバリア層をさらに含むことを特徴とする請求項6記載の光起電装置。
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US12/788,763 US9371247B2 (en) | 2009-05-29 | 2010-05-27 | Fusion formable sodium free glass |
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JP2016104700A (ja) | 2016-06-09 |
TW201119967A (en) | 2011-06-16 |
KR20120026113A (ko) | 2012-03-16 |
KR20180135998A (ko) | 2018-12-21 |
KR101931464B1 (ko) | 2018-12-20 |
US20100300536A1 (en) | 2010-12-02 |
US20190112219A1 (en) | 2019-04-18 |
JP2012528072A (ja) | 2012-11-12 |
KR20170091767A (ko) | 2017-08-09 |
TWI462889B (zh) | 2014-12-01 |
US20170334764A1 (en) | 2017-11-23 |
CN102574724A (zh) | 2012-07-11 |
US20160163899A1 (en) | 2016-06-09 |
EP2435376A2 (en) | 2012-04-04 |
AU2010253784A1 (en) | 2012-02-02 |
WO2010138784A3 (en) | 2011-01-20 |
US9371247B2 (en) | 2016-06-21 |
US10173919B2 (en) | 2019-01-08 |
CN107459259A (zh) | 2017-12-12 |
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