RU2009137906A - Буферный слой для структуры переднего электрода в фотоэлектрическом приборе или ему подобном - Google Patents

Буферный слой для структуры переднего электрода в фотоэлектрическом приборе или ему подобном Download PDF

Info

Publication number
RU2009137906A
RU2009137906A RU2009137906/28A RU2009137906A RU2009137906A RU 2009137906 A RU2009137906 A RU 2009137906A RU 2009137906/28 A RU2009137906/28 A RU 2009137906/28A RU 2009137906 A RU2009137906 A RU 2009137906A RU 2009137906 A RU2009137906 A RU 2009137906A
Authority
RU
Russia
Prior art keywords
photovoltaic device
buffer film
electrode
film
semiconductor film
Prior art date
Application number
RU2009137906/28A
Other languages
English (en)
Inventor
Алексей КРАСНОВ (US)
Алексей КРАСНОВ
Юйвей ЛЮ (US)
Юйвей ЛЮ
Original Assignee
Гардиан Индастриз Корп. (Us)
Гардиан Индастриз Корп.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Гардиан Индастриз Корп. (Us), Гардиан Индастриз Корп. filed Critical Гардиан Индастриз Корп. (Us)
Publication of RU2009137906A publication Critical patent/RU2009137906A/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
    • C03C17/347—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a sulfide or oxysulfide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
    • C03C17/3476—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a selenide or telluride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/70—Properties of coatings
    • C03C2217/73—Anti-reflective coatings with specific characteristics
    • C03C2217/734—Anti-reflective coatings with specific characteristics comprising an alternation of high and low refractive indexes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/944—Layers comprising zinc oxide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948—Layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

1. Фотоэлектрический прибор, содержащий: ! переднюю стеклянную подложку; ! активную полупроводниковую пленку; ! электропроводящий и, по существу, прозрачный передний электрод, находящийся между по меньшей мере передней стеклянной подложкой и полупроводниковой пленкой; и ! буферную пленку, содержащую оксид олова, находящуюся между передним электродом и полупроводниковой пленкой. ! 2. Фотоэлектрический прибор по п.1, в котором буферная пленка непосредственно контактирует и с передним электродом, и с полупроводниковой пленкой. ! 3. Фотоэлектрический прибор по п.1, в котором буферная пленка имеет работу выхода по меньшей мере 4,3 эВ. ! 4. Фотоэлектрический прибор по п.1, в котором буферная пленка, содержащая оксид олова, легирована Sb. ! 5. Фотоэлектрический прибор по п.1, в котором буферная пленка составляет от примерно 100 до 1000 Å в толщину. ! 6. Фотоэлектрический прибор по п.1, в котором буферная пленка составляет от примерно 150 до 600 Å в толщину. ! 7. Фотоэлектрический прибор по п.1, в котором, по существу, прозрачный передний электрод содержит один или более из: оксида индия-олова, оксида цинка, оксида цинка-алюминия и/или оксида индия-цинка. ! 8. Фотоэлектрический прибор по п.1, в котором буферная пленка состоит по существу из оксида олова, который может быть необязательно легирован Sb. ! 9. Фотоэлектрический прибор по п.1, в котором буферная пленка является проводящей и, по существу, прозрачной. ! 10. Фотоэлектрический прибор по п.1, в котором буферная пленка является менее проводящей и значит имеет большее удельное сопротивление, чем передний электрод. ! 11. Фотоэлектрический прибор по п.1, в котором полупроводниковая пленка содержит CdS

Claims (20)

1. Фотоэлектрический прибор, содержащий:
переднюю стеклянную подложку;
активную полупроводниковую пленку;
электропроводящий и, по существу, прозрачный передний электрод, находящийся между по меньшей мере передней стеклянной подложкой и полупроводниковой пленкой; и
буферную пленку, содержащую оксид олова, находящуюся между передним электродом и полупроводниковой пленкой.
2. Фотоэлектрический прибор по п.1, в котором буферная пленка непосредственно контактирует и с передним электродом, и с полупроводниковой пленкой.
3. Фотоэлектрический прибор по п.1, в котором буферная пленка имеет работу выхода по меньшей мере 4,3 эВ.
4. Фотоэлектрический прибор по п.1, в котором буферная пленка, содержащая оксид олова, легирована Sb.
5. Фотоэлектрический прибор по п.1, в котором буферная пленка составляет от примерно 100 до 1000 Å в толщину.
6. Фотоэлектрический прибор по п.1, в котором буферная пленка составляет от примерно 150 до 600 Å в толщину.
7. Фотоэлектрический прибор по п.1, в котором, по существу, прозрачный передний электрод содержит один или более из: оксида индия-олова, оксида цинка, оксида цинка-алюминия и/или оксида индия-цинка.
8. Фотоэлектрический прибор по п.1, в котором буферная пленка состоит по существу из оксида олова, который может быть необязательно легирован Sb.
9. Фотоэлектрический прибор по п.1, в котором буферная пленка является проводящей и, по существу, прозрачной.
10. Фотоэлектрический прибор по п.1, в котором буферная пленка является менее проводящей и значит имеет большее удельное сопротивление, чем передний электрод.
11. Фотоэлектрический прибор по п.1, в котором полупроводниковая пленка содержит CdS и/или CdTe.
12. Фотоэлектрический прибор по п.1, дополнительно содержащий задний электрод, причем активная полупроводниковая пленка предусмотрена между по меньшей мере передним электродом и задним электродом.
13. Фотоэлектрический прибор по п.1, в котором буферная пленка имеет работу выхода от примерно 4,0 до 5,7 эВ.
14. Фотоэлектрический прибор по п.1, в котором буферная пленка имеет работу выхода от примерно 4,3 до 5,2 эВ.
15. Фотоэлектрический прибор по п.1, в котором буферная пленка имеет работу выхода от примерно 4,5 до 5,0 эВ.
16. Электродная структура для применения в электронном приборе, содержащая:
электропроводящий и, по существу, прозрачный электрод, находящийся между по меньшей мере одной подложкой и полупроводниковой пленкой; и
буферную пленку, содержащую оксид олова, находящуюся между электродом и полупроводниковой пленкой, причем буферная пленка имеет проводимость меньшую, чем у электрода.
17. Электродная структура по п.16, в которой буферная пленка непосредственно контактирует и с электродом, и с полупроводниковой пленкой.
18. Способ изготовления фотоэлектрического прибора, включающий в себя:
обеспечение стеклянной подложки;
распыление по меньшей мере одной мишени в атмосфере для того, чтобы осадить по существу прозрачный проводящий электрод на стеклянную подложку;
распыление по меньшей мере одной мишени, содержащей олово, для того, чтобы осадить буферную пленку, содержащую оксид олова, на стеклянную подложку поверх по меньшей мере проводящего электрода, образуя тем самым электродную структуру на стеклянной подложке; и
формирование фотоэлектрического прибора, при котором электродную структуру соединяют с активной полупроводниковой пленкой для того, чтобы образовать фотоэлектрический прибор.
19. Способ по п.18, в котором атмосфера, в которой распыляют мишень(и), используемую(ые) при формировании электрода и/или буферной пленки, включает в себя газообразные аргон и кислород и обладает отношением газообразного кислорода ко всему газу от 0,00001 до 0,0025.
20. Способ по п.18, в котором полупроводниковая пленка содержит аморфный кремний или CdTe.
RU2009137906/28A 2007-03-14 2008-02-13 Буферный слой для структуры переднего электрода в фотоэлектрическом приборе или ему подобном RU2009137906A (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/717,787 US20080223430A1 (en) 2007-03-14 2007-03-14 Buffer layer for front electrode structure in photovoltaic device or the like
US11/717,787 2007-03-14

Publications (1)

Publication Number Publication Date
RU2009137906A true RU2009137906A (ru) 2011-04-20

Family

ID=39760262

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2009137906/28A RU2009137906A (ru) 2007-03-14 2008-02-13 Буферный слой для структуры переднего электрода в фотоэлектрическом приборе или ему подобном

Country Status (5)

Country Link
US (1) US20080223430A1 (ru)
EP (1) EP2122689A2 (ru)
BR (1) BRPI0808858A2 (ru)
RU (1) RU2009137906A (ru)
WO (1) WO2008112056A2 (ru)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105299A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US8410357B2 (en) * 2008-03-18 2013-04-02 Solexant Corp. Back contact for thin film solar cells
KR20100125288A (ko) * 2008-03-18 2010-11-30 솔렉슨트 코포레이션 박막 태양 전지의 개선된 후면 컨택
WO2009120340A1 (en) * 2008-03-26 2009-10-01 Solexant Corp. Improved junctions in substrate solar cells
US7915522B2 (en) 2008-05-30 2011-03-29 Twin Creeks Technologies, Inc. Asymmetric surface texturing for use in a photovoltaic cell and method of making
US8501522B2 (en) * 2008-05-30 2013-08-06 Gtat Corporation Intermetal stack for use in a photovoltaic cell
FR2932009B1 (fr) * 2008-06-02 2010-09-17 Saint Gobain Cellule photovoltaique et substrat de cellule photovoltaique
US20120285508A1 (en) * 2008-08-28 2012-11-15 Stion Corporation Four terminal multi-junction thin film photovoltaic device and method
US8022291B2 (en) * 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
KR20120052310A (ko) * 2009-07-13 2012-05-23 퍼스트 솔라, 인코포레이티드 태양 전지 전면 컨택트 도핑
DE112010003296T5 (de) * 2009-08-17 2012-12-27 First Solar, Inc. Barriereschicht
CN101697362B (zh) * 2009-10-29 2012-06-13 润峰电力有限公司 碲化镉薄膜太阳电池
CN102893408B (zh) 2010-05-13 2016-05-11 第一太阳能有限公司 光伏器件导电层
WO2011160031A2 (en) * 2010-06-18 2011-12-22 University Of Florida Research Foundation, Inc. Thin film photovoltaic devices with microlens arrays
FR2961953B1 (fr) * 2010-06-25 2012-07-13 Saint Gobain Cellule comprenant un matériau photovoltaïque a base de cadmium
CN101931031B (zh) * 2010-07-22 2012-11-21 西交利物浦大学 碲化镉薄膜太阳电池的制造方法
US20120055534A1 (en) * 2010-09-08 2012-03-08 Applied Materials, Inc. Photovoltaic Devices with High Work-Function TCO Buffer Layers and Methods of Manufacture
US9559247B2 (en) 2010-09-22 2017-01-31 First Solar, Inc. Photovoltaic device containing an N-type dopant source
KR101283140B1 (ko) * 2011-01-26 2013-07-05 엘지이노텍 주식회사 태양전지 및 이의 제조방법
WO2012125816A1 (en) * 2011-03-15 2012-09-20 Xunlight 26 Solar, Llc Intrinsically semitransparent solar cell and method of making same
KR101393743B1 (ko) * 2012-06-28 2014-05-13 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
WO2014121187A2 (en) 2013-02-01 2014-08-07 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
JP6201345B2 (ja) * 2013-03-07 2017-09-27 三菱マテリアル株式会社 Ｉｔｏ粒子を製造する方法
CN105009300A (zh) * 2013-03-12 2015-10-28 Ppg工业俄亥俄公司 具有抗反射涂层的光伏电池
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
CN104425653B (zh) * 2013-08-30 2017-11-21 中国建材国际工程集团有限公司 用于薄层太阳能电池的附加的底层
US20150200326A1 (en) * 2014-01-10 2015-07-16 Tsmc Solar Ltd. Method and apparatus for increasing efficiency of thin film photovoltaic cell
US10529883B2 (en) * 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
ES2917523T3 (es) * 2017-04-27 2022-07-08 Nippon Sheet Glass Co Ltd Sustrato transparente revestido con una película de baja reflexión, dispositivo de conversión fotoeléctrica, líquido de revestimiento para formar una película de baja reflexión para un sustrato transparente revestido con una película de baja reflexión, y método de producción de un sustrato transparente revestido con una película de baja reflexión
US20190043640A1 (en) * 2017-08-04 2019-02-07 Vitro Flat Glass, LLC Protective Layer Over a Functional Coating

Family Cites Families (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL127148C (ru) * 1963-12-23
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
US4213798A (en) * 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4378460A (en) * 1981-08-31 1983-03-29 Rca Corporation Metal electrode for amorphous silicon solar cells
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
JPS59175166A (ja) * 1983-03-23 1984-10-03 Agency Of Ind Science & Technol アモルファス光電変換素子
US4598306A (en) * 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US4598396A (en) * 1984-04-03 1986-07-01 Itt Corporation Duplex transmission mechanism for digital telephones
JPS61141185A (ja) * 1984-12-13 1986-06-28 Fuji Electric Co Ltd 光起電力素子の製造方法
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPS62179165A (ja) * 1986-01-31 1987-08-06 Sharp Corp アモルフアスシリコン太陽電池
AU616736B2 (en) * 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
US5091764A (en) * 1988-09-30 1992-02-25 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconductor device having a transparent electrode and amorphous semiconductor layers
US4940495A (en) * 1988-12-07 1990-07-10 Minnesota Mining And Manufacturing Company Photovoltaic device having light transmitting electrically conductive stacked films
US5073451A (en) * 1989-07-31 1991-12-17 Central Glass Company, Limited Heat insulating glass with dielectric multilayer coating
WO1992007386A1 (en) * 1990-10-15 1992-04-30 United Solar Systems Corporation Monolithic solar cell array and method for its manufacture
DE4126738A1 (de) * 1990-12-11 1992-06-17 Claussen Nils Zr0(pfeil abwaerts)2(pfeil abwaerts)-haltiger keramikformkoerper
US5171411A (en) * 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
US5256858A (en) * 1991-08-29 1993-10-26 Tomb Richard H Modular insulation electrically heated building panel with evacuated chambers
WO1995009442A1 (fr) * 1993-09-30 1995-04-06 Canon Kabushiki Kaisha Module a cellules solaires ayant une matiere de revetement de surface a structure en trois couches
JP3029178B2 (ja) * 1994-04-27 2000-04-04 キヤノン株式会社 薄膜半導体太陽電池の製造方法
GB9500330D0 (en) * 1995-01-09 1995-03-01 Pilkington Plc Coatings on glass
FR2730990B1 (fr) * 1995-02-23 1997-04-04 Saint Gobain Vitrage Substrat transparent a revetement anti-reflets
DE69629613T2 (de) * 1995-03-22 2004-06-17 Toppan Printing Co. Ltd. Mehrschichtiger, elektrisch leitender Film, transparentes Elektrodensubstrat und Flüssigkristallanzeige die diesen benutzen
JP3431776B2 (ja) * 1995-11-13 2003-07-28 シャープ株式会社 太陽電池用基板の製造方法および太陽電池用基板加工装置
US6433913B1 (en) * 1996-03-15 2002-08-13 Gentex Corporation Electro-optic device incorporating a discrete photovoltaic device and method and apparatus for making same
GB9619134D0 (en) * 1996-09-13 1996-10-23 Pilkington Plc Improvements in or related to coated glass
US6406639B2 (en) * 1996-11-26 2002-06-18 Nippon Sheet Glass Co., Ltd. Method of partially forming oxide layer on glass substrate
US6123824A (en) * 1996-12-13 2000-09-26 Canon Kabushiki Kaisha Process for producing photo-electricity generating device
JP3805889B2 (ja) * 1997-06-20 2006-08-09 株式会社カネカ 太陽電池モジュールおよびその製造方法
JPH1146006A (ja) * 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6222117B1 (en) * 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
FR2781062B1 (fr) * 1998-07-09 2002-07-12 Saint Gobain Vitrage Vitrage a proprietes optiques et/ou energetiques electrocommandables
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
FR2791147B1 (fr) * 1999-03-19 2002-08-30 Saint Gobain Vitrage Dispositif electrochimique du type dispositif electrocommandable a proprietes optiques et/ou energetiques variables
TW463528B (en) * 1999-04-05 2001-11-11 Idemitsu Kosan Co Organic electroluminescence element and their preparation
NO314525B1 (no) * 1999-04-22 2003-03-31 Thin Film Electronics Asa Fremgangsmåte ved fremstillingen av organiske halvledende innretninger i tynnfilm
US6187824B1 (en) * 1999-08-25 2001-02-13 Nyacol Nano Technologies, Inc. Zinc oxide sol and method of making
DE19958878B4 (de) * 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機ｅｌ発光装置およびその製造方法
US6576349B2 (en) * 2000-07-10 2003-06-10 Guardian Industries Corp. Heat treatable low-E coated articles and methods of making same
US7267879B2 (en) * 2001-02-28 2007-09-11 Guardian Industries Corp. Coated article with silicon oxynitride adjacent glass
KR100748818B1 (ko) * 2000-08-23 2007-08-13 이데미쓰 고산 가부시키가이샤 유기 전기발광 표시장치
US6784361B2 (en) * 2000-09-20 2004-08-31 Bp Corporation North America Inc. Amorphous silicon photovoltaic devices
JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP2002170431A (ja) * 2000-11-29 2002-06-14 Idemitsu Kosan Co Ltd 電極基板およびその製造方法
KR100768176B1 (ko) * 2001-02-07 2007-10-17 삼성에스디아이 주식회사 광학적 전기적 특성을 지닌 기능성 박막
WO2002063340A1 (fr) * 2001-02-07 2002-08-15 Kyoto Semiconductor Corporation Radiametre et element de detection de radiations
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
WO2002091483A2 (en) * 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
US6589657B2 (en) * 2001-08-31 2003-07-08 Von Ardenne Anlagentechnik Gmbh Anti-reflection coatings and associated methods
US6936347B2 (en) * 2001-10-17 2005-08-30 Guardian Industries Corp. Coated article with high visible transmission and low emissivity
FR2832706B1 (fr) * 2001-11-28 2004-07-23 Saint Gobain Substrat transparent muni d'une electrode
US6830817B2 (en) * 2001-12-21 2004-12-14 Guardian Industries Corp. Low-e coating with high visible transmission
US7169722B2 (en) * 2002-01-28 2007-01-30 Guardian Industries Corp. Clear glass composition with high visible transmittance
US7037869B2 (en) * 2002-01-28 2006-05-02 Guardian Industries Corp. Clear glass composition
US6919133B2 (en) * 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
FR2844136B1 (fr) * 2002-09-03 2006-07-28 Corning Inc Materiau utilisable dans la fabrication de dispositifs d'affichage lumineux en particulier de diodes electroluminescentes organiques
FR2844364B1 (fr) * 2002-09-11 2004-12-17 Saint Gobain Substrat diffusant
US7141863B1 (en) * 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
TW583466B (en) * 2002-12-09 2004-04-11 Hannstar Display Corp Structure of liquid crystal display
TWI232066B (en) * 2002-12-25 2005-05-01 Au Optronics Corp Manufacturing method of organic light emitting diode for reducing reflection of external light
JP4241446B2 (ja) * 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
JP5068946B2 (ja) * 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
US7087309B2 (en) * 2003-08-22 2006-08-08 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Coated article with tin oxide, silicon nitride and/or zinc oxide under IR reflecting layer and corresponding method
JP4761706B2 (ja) * 2003-12-25 2011-08-31 京セラ株式会社 光電変換装置の製造方法
US8524051B2 (en) * 2004-05-18 2013-09-03 Centre Luxembourg de Recherches pour le Verre et al Ceramique S. A. (C.R.V.C.) Coated article with oxidation graded layer proximate IR reflecting layer(s) and corresponding method
US20050257824A1 (en) * 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
US7700869B2 (en) * 2005-02-03 2010-04-20 Guardian Industries Corp. Solar cell low iron patterned glass and method of making same
US7531239B2 (en) * 2005-04-06 2009-05-12 Eclipse Energy Systems Inc Transparent electrode
US7700870B2 (en) * 2005-05-05 2010-04-20 Guardian Industries Corp. Solar cell using low iron high transmission glass with antimony and corresponding method
US7743630B2 (en) * 2005-05-05 2010-06-29 Guardian Industries Corp. Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product
US7597964B2 (en) * 2005-08-02 2009-10-06 Guardian Industries Corp. Thermally tempered coated article with transparent conductive oxide (TCO) coating
JP2007067194A (ja) * 2005-08-31 2007-03-15 Fujifilm Corp 有機光電変換素子、および積層型光電変換素子
US20070184573A1 (en) * 2006-02-08 2007-08-09 Guardian Industries Corp., Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device
US20070193624A1 (en) * 2006-02-23 2007-08-23 Guardian Industries Corp. Indium zinc oxide based front contact for photovoltaic device and method of making same
US8648252B2 (en) * 2006-03-13 2014-02-11 Guardian Industries Corp. Solar cell using low iron high transmission glass and corresponding method
US7557053B2 (en) * 2006-03-13 2009-07-07 Guardian Industries Corp. Low iron high transmission float glass for solar cell applications and method of making same
US20080047602A1 (en) * 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US20080047603A1 (en) * 2006-08-24 2008-02-28 Guardian Industries Corp. Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
WO2008036769A2 (en) * 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
US20080105299A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105298A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8334452B2 (en) * 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223436A1 (en) * 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same

Also Published As

Publication number Publication date
WO2008112056A2 (en) 2008-09-18
BRPI0808858A2 (pt) 2014-09-09
WO2008112056A3 (en) 2009-04-16
EP2122689A2 (en) 2009-11-25
US20080223430A1 (en) 2008-09-18

Similar Documents

Publication Publication Date Title
RU2009137906A (ru) Буферный слой для структуры переднего электрода в фотоэлектрическом приборе или ему подобном
ES2396570T3 (es) Electrodo frontal con capa de película delgada de metal y capa de tampón de alta función de trabajo para uso en dispositivo fotovoltaico y procedimiento de fabricar el mismo
RU2009131070A (ru) Способ изготовления переднего ппо электрода для применения в фотоэлектрическом приборе или тому подобном
ES2347494T3 (es) Electrodo frontal a base de oxido de cinc dopado con itrio para su uso en dispositivo fotovoltaico similares.
US20130040516A1 (en) Transparent electrode based on combination of transparent conductive oxides, metals and oxides
TWI463682B (zh) 異質接面太陽能電池
RU2009110155A (ru) Фронтальный контакт с тсо с высокой работой выхода для применения в фотоэлектрическом устройстве и способ его получения
Das et al. Degradation studies of transparent conducting oxide: a substrate for microcrystalline silicon thin film solar cells
Hussain et al. Influence of high work function ITO: Zr films for the barrier height modification in a-Si: H/c-Si heterojunction solar cells
TWI405335B (zh) 半導體結構及其製造方法
KR20070119702A (ko) 태양 전지
EP2341555A3 (en) Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US8710357B2 (en) Transparent conductive structure
WO2022247570A1 (zh) 一种异质结太阳电池及其制备方法
CN106847941A (zh) 一种碲化镉薄膜太阳能电池及其制备方法
CN104662673A (zh) 光电转换元件以及光电转换元件的制造方法
JPH0296382A (ja) 半導体装置
Khokhar et al. ITO: Zr bi-layers deposited by reactive O2 and Ar plasma with high work function for silicon heterojunction solar cells
CN104638048B (zh) 异质结太阳能电池
Bruhat et al. Contacting n+ poly-Si junctions with fired AZO layers: a promising approach for high temperature passivated contact solar cells
KR101210073B1 (ko) 태양전지 및 그의 제조방법
KR100957679B1 (ko) 박막형 태양전지
JPS6152992B2 (ru)
JPH0296381A (ja) 半導体装置
TWM517421U (zh) 異質接面太陽能電池結構