KR100957679B1 - 박막형 태양전지 - Google Patents
박막형 태양전지 Download PDFInfo
- Publication number
- KR100957679B1 KR100957679B1 KR1020080127350A KR20080127350A KR100957679B1 KR 100957679 B1 KR100957679 B1 KR 100957679B1 KR 1020080127350 A KR1020080127350 A KR 1020080127350A KR 20080127350 A KR20080127350 A KR 20080127350A KR 100957679 B1 KR100957679 B1 KR 100957679B1
- Authority
- KR
- South Korea
- Prior art keywords
- solar cell
- transparent electrode
- thin film
- amorphous semiconductor
- buffer layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 29
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000007865 diluting Methods 0.000 claims abstract description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
면저항(Ω/㎝) | 접촉저항(Ω) | 곡선인자 | 효율(%) | |
실시예 1 | 12.5 | 1.2 | 0.739 | 7.9 |
실시예 2 | 10.0 | 1.8 | 0.738 | 8.4 |
비교예 1 | 11.3 | 1.7 | 0.734 | 7.5 |
비교예 2 | 9.7 | 2.1 | 0.681 | 7.3 |
Claims (3)
- 투명전극과 p형 비정질 반도체층 사이에 게르마늄 버퍼층을 포함하는 박막형 태양전지.
- 제 1항에 있어서, 상기 게르마늄 버퍼층은 게르마늄 가스를 수소로 20~30배 정도 희석시킨 후 5초 동안 투명전극 위에 증착시켜 형성한 것을 특징으로 하는 박막형 태양전지.
- 제 1항에 있어서, 상기 투명전극은 ZnO, ZnO:B, ZnO:Al, ZnO:H, SnO2, SnO2:F 및 ITO(Indium Tin Oxide)로 이루어진 군으로부터 선택된 1종인 것을 특징으로 하는 박막형 태양전지.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080127350A KR100957679B1 (ko) | 2008-12-15 | 2008-12-15 | 박막형 태양전지 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080127350A KR100957679B1 (ko) | 2008-12-15 | 2008-12-15 | 박막형 태양전지 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100957679B1 true KR100957679B1 (ko) | 2010-05-12 |
Family
ID=42281677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080127350A KR100957679B1 (ko) | 2008-12-15 | 2008-12-15 | 박막형 태양전지 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100957679B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140120655A1 (en) * | 2012-02-28 | 2014-05-01 | International Business Machines Corporation | Enhancing efficiency in solar cells by adjusting deposition power |
US9214577B2 (en) | 2012-02-28 | 2015-12-15 | International Business Machines Corporation | Reduced light degradation due to low power deposition of buffer layer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910010754A (ko) * | 1989-11-10 | 1991-06-29 | 김정배 | 비정질 실리콘 태양 전지 |
KR20100030549A (ko) * | 2008-09-09 | 2010-03-18 | 한국전자통신연구원 | 태양 전지 및 태양전지 제조방법 |
KR20100037861A (ko) * | 2008-10-02 | 2010-04-12 | 주성엔지니어링(주) | 박막형 태양전지 및 그 제조방법 |
-
2008
- 2008-12-15 KR KR1020080127350A patent/KR100957679B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910010754A (ko) * | 1989-11-10 | 1991-06-29 | 김정배 | 비정질 실리콘 태양 전지 |
KR20100030549A (ko) * | 2008-09-09 | 2010-03-18 | 한국전자통신연구원 | 태양 전지 및 태양전지 제조방법 |
KR20100037861A (ko) * | 2008-10-02 | 2010-04-12 | 주성엔지니어링(주) | 박막형 태양전지 및 그 제조방법 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140120655A1 (en) * | 2012-02-28 | 2014-05-01 | International Business Machines Corporation | Enhancing efficiency in solar cells by adjusting deposition power |
US9105805B2 (en) * | 2012-02-28 | 2015-08-11 | International Business Machines Corporation | Enhancing efficiency in solar cells by adjusting deposition power |
US9214577B2 (en) | 2012-02-28 | 2015-12-15 | International Business Machines Corporation | Reduced light degradation due to low power deposition of buffer layer |
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