CN101697362B - 碲化镉薄膜太阳电池 - Google Patents
碲化镉薄膜太阳电池 Download PDFInfo
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- CN101697362B CN101697362B CN2009102093086A CN200910209308A CN101697362B CN 101697362 B CN101697362 B CN 101697362B CN 2009102093086 A CN2009102093086 A CN 2009102093086A CN 200910209308 A CN200910209308 A CN 200910209308A CN 101697362 B CN101697362 B CN 101697362B
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- 239000010409 thin film Substances 0.000 title claims abstract description 10
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title abstract 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 239000011651 chromium Substances 0.000 claims abstract description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 239000011733 molybdenum Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 10
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明公开了一种碲化镉薄膜太阳电池。它具有结构简单，制作成本低，使用寿命长等优点，其结构为：它包括导电玻璃，在导电玻璃上依次涂覆硫化镉层和碲化镉层，所述碲化镉层上依次设有铬层、钼层和铝层。
Description
技术领域
本发明涉及一种碲化镉薄膜太阳电池。
背景技术
现有的碲化镉太阳电池是在导电玻璃基础上依次涂覆硫化镉、碲化镉、铜、碲化锌和镍层来实现的。这种结构的电池存在一定的缺点：1环境稳定性很差，长期使用会有功率衰减2产品生产成本高。
发明内容
本发明的目的就是为了解决上述问题，提供一种具有结构简单，制作成本低，使用寿命长等优点的碲化镉薄膜太阳电池。
为实现上述目的，本发明采用如下技术方案：
一种碲化镉薄膜太阳电池，它包括导电玻璃，在导电玻璃上依次涂覆硫化镉层和碲化镉层，所述碲化镉层上依次设有铬层、钼层和铝层。
硫化镉层厚度为50-500nm。
碲化镉层厚度为1-10微米。
铬层厚度为5-500nm。
钼层厚度为5-500nm。
铝层厚度为5-500nm。
本发明的有益效果是：1环境稳定性好，长期使用没有功率衰减；2产品生产成本低。
附图说明
图1为本发明的结构示意图。
其中，1.导电玻璃，2.硫化镉层，3.碲化镉层，4.铬层，5.钼层，6.铝层。
具体实施方式
下面结合附图与实施例对本发明做进一步说明。
实施例1：
图1中碲化镉薄膜太阳电池包括导电玻璃1，在导电玻璃1上依次涂覆硫化镉层2、碲化镉层3、铬层4、钼层5和铝层。其中，
硫化镉层厚度为50nm。
碲化镉层厚度为1微米。
铬层厚度为5nm。
钼层厚度为5nm。
铝层厚度为5nm。
实施例2：
在本实施例中，
硫化镉层厚度为100nm。
碲化镉层厚度为3微米。
铬层厚度为100nm。
钼层厚度为100nm。
铝层厚度为100nm。
其余结构与实施例1相同，不再赘述。
实施例3：
在本实施例中，
硫化镉层厚度为200nm。
碲化镉层厚度为4微米。
铬层厚度为200nm。
钼层厚度为200nm。
铝层厚度为200nm。
其余结构与实施例1相同，不再赘述。
实施例4：
在本实施例中，
硫化镉层厚度为300nm。
碲化镉层厚度为5微米。
铬层厚度为300nm。
钼层厚度为300nm。
铝层厚度为300nm。
其余结构与实施例1相同，不再赘述。
实施例5：
在本实施例中，
硫化镉层厚度为400nm。
碲化镉层厚度为8微米。
铬层厚度为400nm。
钼层厚度为400nm。
铝层厚度为400nm。
其余结构与实施例1相同，不再赘述。
实施例6：
在本实施例中，
硫化镉层厚度为500nm。
碲化镉层厚度为10微米。
铬层厚度为500nm。
钼层厚度为500nm。
铝层厚度为500nm。
Claims (1)
1.一种碲化镉薄膜太阳电池，它包括导电玻璃，在导电玻璃上依次涂覆硫化镉层和碲化镉层，其特征是，所述碲化镉层上依次设有铬层、钼层和铝层；其中，
硫化镉层厚度为400nm
碲化镉层厚度为8微米
铬层厚度400nm
钼层厚度400nm
铝层厚度400nm。
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009102093086A CN101697362B (zh) | 2009-10-29 | 2009-10-29 | 碲化镉薄膜太阳电池 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102093086A CN101697362B (zh) | 2009-10-29 | 2009-10-29 | 碲化镉薄膜太阳电池 |
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| Publication Number | Publication Date |
|---|---|
| CN101697362A CN101697362A (zh) | 2010-04-21 |
| CN101697362B true CN101697362B (zh) | 2012-06-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8822261B2 (en) * | 2011-09-26 | 2014-09-02 | First Solar, Inc. | Methods of making photovoltaic devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
| CN201532956U (zh) * | 2009-10-29 | 2010-07-21 | 润峰电力有限公司 | 碲化镉薄膜太阳电池 |
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- 2009-10-29 CN CN2009102093086A patent/CN101697362B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
| CN201532956U (zh) * | 2009-10-29 | 2010-07-21 | 润峰电力有限公司 | 碲化镉薄膜太阳电池 |
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| CN101697362A (zh) | 2010-04-21 |
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