CN101697362B - 碲化镉薄膜太阳电池 - Google Patents

碲化镉薄膜太阳电池 Download PDF

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CN101697362B
CN101697362B CN2009102093086A CN200910209308A CN101697362B CN 101697362 B CN101697362 B CN 101697362B CN 2009102093086 A CN2009102093086 A CN 2009102093086A CN 200910209308 A CN200910209308 A CN 200910209308A CN 101697362 B CN101697362 B CN 101697362B
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solar cell
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film solar
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CN101697362A (zh
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王步峰
李青海
王景义
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Weishan County Shunyang Trading Co ltd
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Realforce Power Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

本发明公开了一种碲化镉薄膜太阳电池。它具有结构简单，制作成本低，使用寿命长等优点，其结构为：它包括导电玻璃，在导电玻璃上依次涂覆硫化镉层和碲化镉层，所述碲化镉层上依次设有铬层、钼层和铝层。

Description

碲化镉薄膜太阳电池
技术领域
本发明涉及一种碲化镉薄膜太阳电池。
背景技术
现有的碲化镉太阳电池是在导电玻璃基础上依次涂覆硫化镉、碲化镉、铜、碲化锌和镍层来实现的。这种结构的电池存在一定的缺点：1环境稳定性很差，长期使用会有功率衰减2产品生产成本高。
发明内容
本发明的目的就是为了解决上述问题，提供一种具有结构简单，制作成本低，使用寿命长等优点的碲化镉薄膜太阳电池。
为实现上述目的，本发明采用如下技术方案：
一种碲化镉薄膜太阳电池，它包括导电玻璃，在导电玻璃上依次涂覆硫化镉层和碲化镉层，所述碲化镉层上依次设有铬层、钼层和铝层。
硫化镉层厚度为50-500nm。
碲化镉层厚度为1-10微米。
铬层厚度为5-500nm。
钼层厚度为5-500nm。
铝层厚度为5-500nm。
本发明的有益效果是：1环境稳定性好，长期使用没有功率衰减；2产品生产成本低。
附图说明
图1为本发明的结构示意图。
其中，1.导电玻璃，2.硫化镉层，3.碲化镉层，4.铬层，5.钼层，6.铝层。
具体实施方式
下面结合附图与实施例对本发明做进一步说明。
实施例1：
图1中碲化镉薄膜太阳电池包括导电玻璃1，在导电玻璃1上依次涂覆硫化镉层2、碲化镉层3、铬层4、钼层5和铝层。其中，
硫化镉层厚度为50nm。
碲化镉层厚度为1微米。
铬层厚度为5nm。
钼层厚度为5nm。
铝层厚度为5nm。
实施例2：
在本实施例中，
硫化镉层厚度为100nm。
碲化镉层厚度为3微米。
铬层厚度为100nm。
钼层厚度为100nm。
铝层厚度为100nm。
其余结构与实施例1相同，不再赘述。
实施例3：
在本实施例中，
硫化镉层厚度为200nm。
碲化镉层厚度为4微米。
铬层厚度为200nm。
钼层厚度为200nm。
铝层厚度为200nm。
其余结构与实施例1相同，不再赘述。
实施例4：
在本实施例中，
硫化镉层厚度为300nm。
碲化镉层厚度为5微米。
铬层厚度为300nm。
钼层厚度为300nm。
铝层厚度为300nm。
其余结构与实施例1相同，不再赘述。
实施例5：
在本实施例中，
硫化镉层厚度为400nm。
碲化镉层厚度为8微米。
铬层厚度为400nm。
钼层厚度为400nm。
铝层厚度为400nm。
其余结构与实施例1相同，不再赘述。
实施例6：
在本实施例中，
硫化镉层厚度为500nm。
碲化镉层厚度为10微米。
铬层厚度为500nm。
钼层厚度为500nm。
铝层厚度为500nm。

Claims (1)

1.一种碲化镉薄膜太阳电池，它包括导电玻璃，在导电玻璃上依次涂覆硫化镉层和碲化镉层，其特征是，所述碲化镉层上依次设有铬层、钼层和铝层；其中，
硫化镉层厚度为400nm
碲化镉层厚度为8微米
铬层厚度400nm
钼层厚度400nm
铝层厚度400nm。
CN2009102093086A 2009-10-29 2009-10-29 碲化镉薄膜太阳电池 Active CN101697362B (zh)

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822261B2 (en) * 2011-09-26 2014-09-02 First Solar, Inc. Methods of making photovoltaic devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
CN201532956U (zh) * 2009-10-29 2010-07-21 润峰电力有限公司 碲化镉薄膜太阳电池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
CN201532956U (zh) * 2009-10-29 2010-07-21 润峰电力有限公司 碲化镉薄膜太阳电池

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