CN103828067B - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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CN103828067B
CN103828067B CN201280047712.8A CN201280047712A CN103828067B CN 103828067 B CN103828067 B CN 103828067B CN 201280047712 A CN201280047712 A CN 201280047712A CN 103828067 B CN103828067 B CN 103828067B
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沈洺奭
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Abstract

一种太阳能电池，包括：基板；在所述基板上的背电极层；在所述背电极层上的光吸收层；以及在所述光吸收层与所述透明电极层之间的杂质掺杂层。在所述太阳能电池中，通过使杂质掺杂层的杂质掺杂量大于透明电极层的杂质掺杂量，减小了透明电极层与背电极层接触期间的接触电阻。

Description

太阳能电池及其制造方法
技术领域
实施例涉及一种太阳能电池及其制造方法。更具体地讲，实施例涉及一种具有改善的效率的太阳能电池及其制造方法。
背景技术
通常，太阳能电池将太阳能转换成电能。最近，随着能源消耗的增大，已经广泛商业化使用太阳能电池。
太阳能电池可以通过以下方式形成：将背电极层、光吸收层和透明电极层层压在透明玻璃基板上，使得背电极层可以电性连接到透明电极层上。
然而，当背电极层连接到透明电极层上时，背电极层和透明电极层之间的接触电阻增大，从而降低了太阳能电池的效率。
发明内容
技术问题
实施例提供了一种太阳能电池及其制造方法，所述太阳能电池能减小背电极层与透明电极层之间的接触电阻。
技术方案
根据实施例，提供了一种太阳能电池，所述太阳能电池包括：基板；在所述基板上的背电极层；在所述背电极层上的光吸收层；以及在所述光吸收层与所述透明电极层之间的杂质掺杂层。
根据实施例，提供了一种太阳能电池的制造方法，所述方法包括以下步骤：制备基板；在所述基板上形成背电极层；在所述背电极层上形成光吸收层；在所述光吸收层上形成杂质掺杂层；以及在所述杂质掺杂层上形成透明电极层。
有益效果
根据实施例，可以在透明电极层的下部形成杂质掺杂层以增大电子收集效率，从而改善太阳能电池的电流特性。
另外，根据实施例，通过使杂质掺杂层的杂质掺杂量大于透明电极层的杂质掺杂量可以减小背电极层与透明电极层之间的接触电阻。
此外，根据实施例，通过使杂质掺杂层的杂质掺杂量大于透明电极层的杂质掺杂量可以减小背电极与透明电极层之间的接触电阻。
附图说明
图1是示出了根据实施例的太阳能电池的剖视图。
图2是示出了根据实施例的太阳能电池的修改实例的剖视图。
图3至图8是示出了根据实施例的太阳能电池的制造方法的剖视图。
具体实施方式
以下将参照附图更加详细地描述实施例。
图1是示出了根据实施例的太阳能电池的剖视图，并且图2是示出了根据实施例的太阳能电池的修改实例的剖视图。
参见图1，根据实施例的太阳能电池包括基板100、在基板100上的背电极层200、在背电极层200上的光吸收层300、在光吸收层300上的第一缓冲层400和第二缓冲层500、在第二缓冲层500上的透明电极层600以及在光吸收层300与透明电极层600之间的杂质掺杂层700。
基板100可以具有平板形状并且包括透明玻璃材料。
基板100可以是刚性的或柔性的。除玻璃基板外，可以使用塑料基板或金属基板作为基板100。另外，具有钠成分的钠钙玻璃基板可以用作基板100。
背电极层200可以形成在基板100上。
背电极层200可以包括钼(Mo)。背电极层200可以包括金属，例如除钼(Mo)之外的铝(Al)、镍(Ni)、铬(Cr)、钛(Ti)、银(Ag)或金(Au)，或者透明导电氧化物(TCO)薄膜，例如铟锡氧化物(ITO)、氧化锌(ZnO)、或SnO2。
背电极层200可以形成为使用同种或异种金属来提供至少两层。
光吸收层300可以形成在背电极层200上。
光吸收层300可以具有I-III-VI族化合物。例如，光吸收层300可以具有CIGSS(Cu(IN,Ga)Se2)晶体结构、CISS(Cu(IN)(Se,S)2)晶体结构或CGSS(Cu(Ga)(Se,S)2)晶体结构。
第一缓冲层400可以形成在光吸收层300上。
第一缓冲层400在光吸收层300上与光吸收层300直接接触，并且起到使光吸收层300与以下描述的透明电极层600之间的能带隙衰减的作用。
第一缓冲层400可以通过使用包含硫化镉(CdS)的材料来形成，并且可以具有与背电极层200和透明电极层600之间的中间能带隙相对应的能带隙。
第二缓冲层500可以形成在第一缓冲层400上。
第二缓冲层500是高电阻缓冲层并且可以包括具有高透光率和电导率的氧化锌(ZnO)。
第二缓冲层500可以防止与透明电极层600发生绝缘并且使冲击损害减小。
根据实施例的杂质掺杂层700和透明电极层600可以依次形成在第二缓冲层500上。
杂质掺杂层700和透明电极层600的每一个的厚度T可以在100nm至2000nm的范围内。
透明电极层600包括透明导电材料，或者可以包括充当杂质的掺杂铝的氧化锌(AZO；ZnO:Al)。
透明电极层600可以通过使用具有高透光率和电导率的氧化锌(ZnO)、SnO2和ITO中的一种连同AZO来形成。
根据实施例的杂质掺杂层700可以直接沉积在光吸收层300上。
杂质掺杂层700可以通过使用包含III族元素的材料来形成，例如，铝(Al)、硼(B)、镓(Ga)或铟(In)。
III族元素是能容易地增大氧化锌(ZnO)纳米结构的自由电荷密度的最理想的材料，并且该III族元素中的杂质含量可以大于在透明电极层600中掺杂的杂质含量。
因此，与相关技术相比，透明电极层600中的电子收集效率得到了提高，使得可以改善太阳能电池的电流特性。
另外，因为杂质掺杂层700的杂质掺杂量大于透明电极层600的杂质掺杂量，所以可以减小在透明电极层600与背电极层200接触期间的接触电阻。
虽然在上述实施例中形成了具有单层结构的杂质掺杂层700，但是实施例不限于此。换句话讲，可以形成具有双层结构的杂质掺杂层700。
如图2所示，根据实施例的太阳能电池可以包括：基板100；依次形成在支撑基板100上的背电极层200、光吸收层300、第一缓冲层400、第二缓冲层500和透明电极层600；以及在光吸收层300与透明电极层600之间的多个杂质掺杂层700和800。
本实施例具有与上述实施例相同的配置，不同之处在于杂质掺杂层700和800，并且将会省略关于相同配置的描述。
杂质掺杂层700和800可以直接形成在光吸收层300上，并且包括第一杂质掺杂层700和第二杂质掺杂层800。
第一杂质掺杂层700和第二杂质掺杂层800中的每一个可以包括含有III族元素的材料。例如，第一杂质掺杂层700和第二杂质掺杂层800中的每一个可以包括含有铝(Al)、硼(B)、镓(Ga)或铟(In)的材料。
在这种情况下，第一杂质掺杂层700和第二杂质掺杂层800的杂质掺杂量可以互不相同。第一杂质掺杂层700的掺杂量可以大于第二杂质掺杂层800的掺杂量。
当第一杂质掺杂层700的杂质掺杂量大于第二杂质掺杂层800的杂质掺杂量时，第一杂质掺杂层700增大了电子收集效率，从而改善了电流特性。
另外，因为第二杂质掺杂层800的掺杂量小于第一杂质掺杂层700的掺杂量，所以可以提高透光率。因此，可以进一步增大光吸收层300所吸收的光的量。
虽然前述实施例被图示为存在两个杂质掺杂层，但是可以形成三个或三个以上个杂质掺杂层。当形成三个或三个以上个杂质掺杂层时，杂质掺杂层的杂质掺杂量在杂质掺杂层的上部的方向上逐渐减小。
以下将参照附图详细描述根据实施例的太阳能电池的制造方法。
图3至图8是示出了根据实施例的太阳能电池的制造方法的剖视图。
当按照图2所示制备基板100时，执行在基板100上形成背电极层200的步骤。
背电极层200可以通过使用溅镀方法沉积钼(Mo)来形成。
接着，执行图案化过程，将背电极层200分成带状形式，从而形成第一图案线P1。在这种情况下，图案化过程可以使用激光来执行。
如图3所示，当第一图案线P1形成在背电极层200上时，光吸收层300、第一缓冲层400和第二缓冲层500依次形成在背电极层200上。
光吸收层300可以通过使用共蒸镀沉积CIGS而形成。
第一缓冲层400可以通过使用化学浴沉积(CBD)来沉积硫化镉(CdS)而形成。
第二缓冲层500可以通过溅镀氧化锌(ZnO)来形成。
如图5所示，当光吸收层300、第一缓冲层400和第二缓冲层500依次层压在背电极层200上时，通过图案化过程分别在光吸收层300、第一缓冲层400和第二缓冲层500的相应部分上形成第二图案线P2。
第二图案线P2可以以预定的距离与第一图案线P1间隔开，并且第二图案线P2可以通过刻绘方法或激光来形成。
如图6所示，当在光吸收层300、第一缓冲层400和第二缓冲层500上形成了第二图案线P2时，可以执行在第二缓冲层500上形成杂质掺杂层700的步骤。
杂质掺杂层700可以通过CVD、溅镀或蒸镀方案使用例如铝(Al)、硼(B)、镓(Ga)或铟(In)的III族元素来形成。
如图7所示，当在第二缓冲层50上形成杂质掺杂层700时，执行在杂质掺杂层700上形成透明电极层600的步骤。
透明电极层600可以通过使用溅镀方法沉积AZO而形成。
如图8所示，当透明电极层600形成在杂质掺杂层700上时，可以在光吸收层300、第一缓冲层400、第二缓冲层500和透明电极层600上形成第三图案线P3。
第三图案线P3可以以预定的距离与第二图案线P2间隔开，并且可以通过刻绘方法或激光来形成。
因此，可以完成根据实施例的太阳能电池的制造。
尽管参照本发明的多个说明性实施例描述了实施例，但应当理解，本领域技术人员在本公开的精神和原理的范围内可以进行多种其他修改和实施例。更具体地讲，在本公开、附图和所附权利要求书的范围内能够在所讨论的组合配置的组成零件和/或配置上进行多种变型和修改。除在组成零件和/或配置进行变型和修改之外，替代使用对本领域技术人员也是显见的。

Claims (7)

1.一种太阳能电池，包括：
基板；
在所述基板上的背电极层；
在所述背电极层上的光吸收层；
在所述光吸收层上的缓冲层；
杂质掺杂层，所述杂质掺杂层形成包括在所述缓冲层上的第一杂质掺杂层和在所述第一杂质掺杂层上的第二杂质掺杂层的多层结构；以及
设置在所述第二杂质掺杂层上的透明电极层，
其中，所述光吸收层和所述缓冲层形成图案线，
其中，所述图案线的内部填充有所述第一杂质掺杂层和在所述第一杂质掺杂层上的所述第二杂质掺杂层，
其中，所述第二杂质掺杂层比所述第一杂质掺杂层更接近所述透明电极层，并且所述第二杂质掺杂层的掺杂量小于所述第一杂质掺杂层的掺杂量。
2.如权利要求1所述的太阳能电池，其中，所述杂质掺杂层包括选自由铝(Al)、硼(B)、镓(Ga)和铟(In)组成的组中的一种。
3.如权利要求1所述的太阳能电池，其中，所述透明电极层和所述杂质掺杂层的厚度在100nm至2000nm的范围内。
4.如权利要求1所述的太阳能电池，其中，所述杂质掺杂层的掺杂量大于所述透明电极层的掺杂量。
5.一种太阳能电池的制造方法，所述方法包括：
制备基板；
在所述基板上形成背电极层；
在所述背电极层上形成光吸收层；
在所述光吸收层上形成缓冲层；
形成穿过所述光吸收层和所述缓冲层的图案线；
在所述缓冲层上形成杂质掺杂层；以及
在所述杂质掺杂层上形成透明电极层，
其中，所述杂质掺杂层形成包括第一杂质掺杂层和第二杂质掺杂层的多层结构，
其中，所述图案线的内部填充所述第一杂质掺杂层和在所述第一杂质掺杂层上的所述第二杂质掺杂层，
其中，所述第二杂质掺杂层比所述第一杂质掺杂层更接近所述透明电极层，并且所述第二杂质掺杂层的掺杂量小于所述第一杂质掺杂层的掺杂量。
6.如权利要求5所述的方法，其中，在形成所述杂质掺杂层期间，所述杂质掺杂层是通过沉积选自由铝(Al)、硼(B)、镓(Ga)和铟(In)组成的组中的一种而形成的。
7.如权利要求5所述的方法，其中，所述透明电极层和所述杂质掺杂层的厚度在100nm至2000nm的范围内。
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