CN103189997A - 太阳能电池装置及其制造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- 210000001142 back Anatomy 0.000 claims description 31
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 8
- 229910001415 sodium ion Inorganic materials 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 239000011734 sodium Substances 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
公开了一种太阳能电池装置及其制造方法。所述太阳能电池装置包括:衬底;在所述衬底上的包含钼的背电极层;在所述背电极层上的光吸收层;以及在所述光吸收层上的窗口层,其中所述背电极层包括在所述衬底上的第一电极层、在所述第一电极层上的阻挡层和在所述阻挡层上的第二电极层。
Description
技术领域
本发明涉及一种太阳能电池装置及其制造方法。
背景技术
近年来,随着能源消耗增加,已研发出一种太阳能电池用来把太阳能转换成电能。
特别是,已广泛使用一种基于CIGS的电池,所述基于CIGS的电池是一种PN异质结装置,其具有包括玻璃衬底的衬底结构、金属背电极层、P型基于CIGS的光吸收层、高阻缓冲层和N型窗口层。
此外,为了制造这种太阳能电池装置,必须执行图案化过程以提供多个电池。
发明内容
技术问题
本发明提供一种具有高产率的效率提高的太阳能电池装置及其制造方法。
解决方案
根据发明的一种太阳能电池装置,包括:衬底;在所述衬底上的包含钼的背电极层;在所述背电极层上的光吸收层;以及在所述光吸收层上的窗口层,其中所述背电极层包括在所述衬底上的第一电极层、在所述第一电极层上的阻挡层和在所述阻挡层上的第二电极层。
根据本发明的一种太阳能电池装置的制造方法,包括如下步骤:在衬底上形成背电极层;在所述背电极上掺杂与形成所述背电极的材料不同的金属元素;在所述背电极层上形成光吸收层;以及在所述光吸收层上形成窗口层。发明的有益效果
根据本发明的太阳能电池装置能增大开路电压(Voc)和填充因子(FF),由此能提高太阳能电池的光电转换效率。
另外,由于能提高光吸收层中的电荷浓度,所以能减小光吸收层的厚度,由此能降低透射光的损失。
附图简要说明
图1是示出根据实施例的太阳能电池的剖视图;以及
图2至6是示出根据实施例的制造太阳能电池板的过程的剖视图。
具体实施方式
在实施例的描述中,应当明白,当衬底、层、膜或电极被表述为在另一个衬底、另一个层、另一个膜或另一个电极之上或之下时,它可以直接或间接在该另一个衬底、层、膜或电极之上,或还可以存在至少一个中间层。参照附图描述层的这种位置关系。为了简便或清晰明了,可以夸大、省略或示意性地画出图中所示的每层的厚度或尺寸。此外,元件的尺寸不必完全反映出实际尺寸。
图1是示出根据实施例的太阳能电池的剖视图。
参考图1,太阳能电池板包括支撑衬底100、具有第一电极层210、阻挡层220和第二电极层230的背电极层200、光吸收层300、缓冲层400、高阻缓冲层500和窗口层600。
支撑衬底100具有平板形状并且支撑背电极层200、光吸收层300、缓冲层400、高阻缓冲层500和窗口层600。
支撑衬底100可以包括绝缘材料。支撑衬底100可以是玻璃衬底、塑料衬底或金属衬底。更详细地说,支撑衬底100可以是钠钙玻璃。
如果钠钙玻璃衬底用作支撑衬底,那么在太阳能电池的制造过程期间,钠钙玻璃中所含有的钠Na可以扩散到包含CIGS材料的光吸收层300中。在这种情况下,光吸收层300中的电荷浓度可以增大,从而能提高太阳能电池的光电转换效率。
然而,如果钠Na没有均匀地分布在钠钙玻璃衬底的整个区域上方,那么每个电池会具有不一致的光电转换效率,因此会消弱要提高光电转换效率的效果。从而,为了均匀地掺杂钠Na,在衬底上形成阻挡层以阻挡Na扩散,以及额外地形成钠Na层或直接地注入Na离子。
同时,支撑衬底100可以包括含有铝的陶瓷衬底、不锈钢衬底、或具有挠性的聚合物衬底。支撑衬底100可以是透明的、挠性的或刚性的。
背电极层200布置在支撑衬底100上。背电极层200是导电层。
背电极层200允许从太阳能电池的光吸收层300中产生的电荷迁移,使得电流能流出太阳能电池。为此,背电极层200可以具有高导电率和低比电阻。
另外,由于背电极层200与形成光吸收层300的CIGS化合物接触,所以在光吸收层300和背电极层200之间必须形成表现出低接触电阻值的欧姆接触。
此外,当在硫(S)或硒(Se)气氛下进行热处理过程来形成CIGS化合物时,背电极层200必须具有高温稳定性。另外,背电极层200相对于支撑衬底100可以具有优良的粘附特性,使得背电极层200不会由于热膨胀系数差异而从支撑衬底100上脱离。
背电极层200可以包括Mo、Au、Al、Cr、W和Cu中的一种。在上述元素之中,Mo可以满足对于背电极层200所需的上述特性。
背电极层200可以包括至少两层。在这种情况下,至少两层可以利用相同金属或不同金属来形成。根据本实施例,背电极层200包括第一电极层210、阻挡层220和第二电极层230。
第一电极层210可以通过使用Mo来形成并且与支撑衬底100接触。在上述元素之中,Mo具有与支撑衬底100相似的热膨胀系数,因此Mo能有效地结合到支撑衬底100上,从而背电极层200不会从支撑衬底100上脱离。
阻挡层220形成在第一电极层210上。阻挡层220插置于第一电极层210和第二电极层220之间以防止在第二电极层230中所包含的离子扩散到第一电极层210和支撑衬底100中。
另外,阻挡层220可以用作反射层。详细地说,阻挡层220防止入射到太阳能电池中的光被吸收在支撑衬底100中,并朝向光吸收层300反射光,由此提高太阳能电池的效率。反射层可以包括具有50%或以上的反射率的材料。
阻挡层220可以具有在50nm至200nm范围内的厚度。阻挡层220可以包括氮化物,例如TiN或TaN。
第二电极层230形成在阻挡层220上。例如,第二电极层230可以通过使用Mo来形成。第二电极层230可以通过掺杂金属离子,例如钠离子,来形成。
第二电极层230中所含有的钠离子可以扩散到光吸收层300中,使得光吸收层300的电荷浓度能增大,从而提高太阳能电池的光电转换效率。
钠离子可以扩散到支撑衬底100和第一电极层210以及光吸收层300中。然而,阻挡层220阻挡钠离子,因此能有效地控制钠离子,使得光吸收层300中的电荷浓度能有效地增大。
因此,可以提高开路电压Voc和填充因子。另外,由于可以提高光吸收层300中的电荷浓度,所以可以降低透射光的损失,从而可以减小光吸收层300的厚度。
第二电极层230可以具有对应于背电极层200的总厚度基础上1%至3%的厚度,而背电极层200可以具有大约1μm或更小的厚度。
光吸收层300可以包括组I-III-VI族化合物。例如,光吸收层300可以包括Cu(In,Ga)Se2(CIGS)晶体结构、Cu(In)Se2晶体结构、或Cu(Ga)Se2晶体结构。
光吸收层300具有在大约1eV至大约1.8eV范围内的能带隙。
缓冲层400布置于光吸收层300上。缓冲层400包括CdS并且具有在大约2.2eV至大约2.4eV范围内的能带隙。
高阻缓冲层500布置在缓冲层400上。高阻缓冲层500可以包括iZnO,其是未掺杂杂质的氧化锌。高阻缓冲层500具有在大约3.1eV至大约3.3eV范围内的能带隙。
窗口层600布置在高阻缓冲层500上。窗口层600是透明导电层。另外,窗口层600具有比背电极层200的电阻高的电阻。
窗口层600包括氧化物。例如,窗口层600可以包括氧化锌、氧化铟锡(ITO)或氧化铟锌(IZO)。
另外,氧化物可以包括导电掺杂剂,例如Al、Al2O3、Mg或Ga。详细地说,窗口层600可以包括掺Al氧化锌(AZO)或掺Ga氧化锌(GZO)。
窗口具有与背电极的形状相对应的形状。例如,窗口是按带状图案的形式排列的。与此相反,窗口也能按矩阵形式排列。
如上所述,背电极层200包括第一电极层210、阻挡层220和第二电极层230,并且在第二电极层230中所含有的钠离子由于阻挡层220而扩散到光吸收层300,因此可以有效地控制钠离子,从而增大了光吸收层300中的电荷浓度。另外,因为透射光的损失会由于光吸收层300中的电荷浓度的提高而减小,所以可以提高光效率,从而能减小光吸收层300的厚度并能提高产率。
图2至6是示出根据实施例的制造太阳能电池装置的过程的剖视图。可以通过使用Mo来沉积第一电极层210。可以通过PVD(物理气相沉积)过程或电镀过程来形成第一电极层210。
另外,在支撑衬底100和第一电极层210之间可以形成附加层,诸如扩散阻挡层。
然后,在第一电极层210上顺序地形成阻挡层220和第二电极层230。可以通过CVD过程来形成阻挡层220,但本实施例不限于此。
可以通过使用Mo来沉积第二电极层230,并且在已通过PVD过程或电镀过程形成第二电极层230之后,可以将金属离子掺杂到第二电极层230中。
参考图4,在背电极层200上形成光吸收层300。
可以通过溅射过程或蒸镀过程来形成光吸收层300。
例如,同时或单独地蒸发Cu、In、Ga和Se以形成基于CIGS的光吸收层300,或者在形成金属前驱层之后可以通过硒化过程来形成光吸收层300。
详细地说,通过利用Cu靶、In靶和Ga靶来执行溅射过程,在背电极层200上形成金属前驱层。
然后,执行硒化过程以形成基于CIGS的光吸收层300。
另外,可以同时地执行利用Cu靶、In靶和Ga靶的溅射过程和硒化过程。
此外,通过硒化过程和仅利用Cu和In靶或Cu和Ga靶的溅射过程,可以形成基于CIS或基于CIG的光吸收层300。
参考图5,在光吸收层300上形成缓冲层400和高阻缓冲层500。
缓冲层400可以通过CBD(化学浴沉积)过程形成。例如,在已形成光吸收层300之后,把光吸收层300浸入含有要形成CdS的材料的溶液中,使得含有CdS的缓冲层400形成在光吸收层300上。
此后,通过溅射过程在缓冲层400上沉积氧化锌,由此形成高阻缓冲层500。
缓冲层400和高阻缓冲层500可以具有薄的厚度。例如,缓冲层400和高阻缓冲层500可以具有在大约1nm至大约80nm范围内的厚度。
参考图6,在高阻缓冲层500上形成窗口层600。通过在高阻缓冲层500上沉积透明导电材料能形成窗口层600。例如,该透明导电材料包括掺Al氧化锌、掺In氧化锌或掺In氧化锌。
工业实用性
如上所述,通过根据本实施例的太阳能电池装置的制造方法,可以制造出能够提高产率和可靠性的含有背电极的太阳能电池装置。
说明书中所涉及的“一个实施例”、“实施例”、“示例性实施例”等,表示结合实施例描述的特定特征、结构或特性均包括在本发明的至少一个实施例中。说明书中出现于各处的这些短语并不一定都涉及同一个实施例。此外,当结合任何实施例描述特定特征、结构或特性时,都认为其落在本领域技术人员结合其它实施例就可以实现这些特征、结构或特性的范围内。
虽然参考本发明的多个示例性实施例而对实施例进行了描述,但应理解的是,本领域普通技术人员可以推导出落在此公开原理的精神和范围内的大量的其它变化和实施例。更具体地,可以在此公开、附图以及所附权利要求书的范围内对组件和/或主要组合设置中的设置进行各种改变与变化。除了组件和/或设置的改变与变化之外,其他应用对本领域技术人员而言也是显而易见的。
Claims (11)
1.一种太阳能电池装置,包括:
衬底;
在所述衬底上的包含钼的背电极层;
在所述背电极层上的光吸收层;以及
在所述光吸收层上的窗口层,
其中所述背电极层包括在所述衬底上的第一电极层、在所述第一电极层上的阻挡层和在所述阻挡层上的第二电极层。
2.如权利要求1的太阳能电池装置,其中,所述第二电极层包含金属离子。
3.如权利要求2的太阳能电池装置,其中,所述金属离子包括钠离子。
4.如权利要求1的太阳能电池装置,其中,所述第一电极层和所述第二电极层包含钼。
5.如权利要求1的太阳能电池装置,其中,所述阻挡层具有在50nm至200nm范围内的厚度。
6.如权利要求1的太阳能电池装置,其中,所述阻挡层包括氮化物。
7.如权利要求1的太阳能电池装置,其中,所述第二电极层的厚度与基于所述背电极层厚度的1%至30%对应。
8.如权利要求6的太阳能电池装置,其中,所述氮化物包括TiN和TaN中的至少一种。
9.一种太阳能电池装置的制造方法,所述方法包括:
在衬底上形成第一电极层;
在所述第一电极层上形成第二电极层;
在所述第二电极层上形成光吸收层;以及
在所述光吸收层上形成窗口层。
10.如权利要求9的方法,进一步包括:在所述第一电极层和所述第二电极层之间形成阻挡层。
11.如权利要求9的方法,其中,在通过物理气相沉积过程或电镀过程已形成所述第二电极层之后,将金属离子掺杂到所述第二电极层中。
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