CN103189997B - 太阳能电池装置及其制造方法 - Google Patents

太阳能电池装置及其制造方法 Download PDF

Info

Publication number
CN103189997B
CN103189997B CN201180052958.XA CN201180052958A CN103189997B CN 103189997 B CN103189997 B CN 103189997B CN 201180052958 A CN201180052958 A CN 201180052958A CN 103189997 B CN103189997 B CN 103189997B
Authority
CN
China
Prior art keywords
layer
electrode
light absorbing
electrode layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180052958.XA
Other languages
English (en)
Other versions
CN103189997A (zh
Inventor
林真宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103189997A publication Critical patent/CN103189997A/zh
Application granted granted Critical
Publication of CN103189997B publication Critical patent/CN103189997B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

公开了一种太阳能电池装置及其制造方法。所述太阳能电池装置包括：衬底；在所述衬底上的包含钼的背电极层；在所述背电极层上的光吸收层；以及在所述光吸收层上的窗口层，其中所述背电极层包括在所述衬底上的第一电极层、在所述第一电极层上的阻挡层和在所述阻挡层上的第二电极层。

Description

太阳能电池装置及其制造方法
技术领域
本发明涉及一种太阳能电池装置及其制造方法。
背景技术
近年来，随着能源消耗增加，已研发出一种太阳能电池用来把太阳能转换成电能。
特别是，已广泛使用一种基于CIGS的电池，所述基于CIGS的电池是一种PN异质结装置，其具有包括玻璃衬底的衬底结构、金属背电极层、P型基于CIGS的光吸收层、高阻缓冲层和N型窗口层。
此外，为了制造这种太阳能电池装置，必须执行图案化过程以提供多个电池。
发明内容
技术问题
本发明提供一种具有高产率的效率提高的太阳能电池装置及其制造方法。
解决方案
根据发明的一种太阳能电池装置，包括：衬底；在所述衬底上的包含钼的背电极层；在所述背电极层上的光吸收层；以及在所述光吸收层上的窗口层，其中所述背电极层包括在所述衬底上的第一电极层、在所述第一电极层上的阻挡层和在所述阻挡层上的第二电极层。
根据本发明的一种太阳能电池装置的制造方法，包括如下步骤：在衬底上形成背电极层；在所述背电极上掺杂与形成所述背电极的材料不同的金属元素；在所述背电极层上形成光吸收层；以及在所述光吸收层上形成窗口层。发明的有益效果
根据本发明的太阳能电池装置能增大开路电压（Voc）和填充因子（FF），由此能提高太阳能电池的光电转换效率。
另外，由于能提高光吸收层中的电荷浓度，所以能减小光吸收层的厚度，由此能降低透射光的损失。
附图简要说明
图1是示出根据实施例的太阳能电池的剖视图；以及
图2至6是示出根据实施例的制造太阳能电池板的过程的剖视图。
具体实施方式
在实施例的描述中，应当明白，当衬底、层、膜或电极被表述为在另一个衬底、另一个层、另一个膜或另一个电极之上或之下时，它可以直接或间接在该另一个衬底、层、膜或电极之上，或还可以存在至少一个中间层。参照附图描述层的这种位置关系。为了简便或清晰明了，可以夸大、省略或示意性地画出图中所示的每层的厚度或尺寸。此外，元件的尺寸不必完全反映出实际尺寸。
图1是示出根据实施例的太阳能电池的剖视图。
参考图1，太阳能电池板包括支撑衬底100、具有第一电极层210、阻挡层220和第二电极层230的背电极层200、光吸收层300、缓冲层400、高阻缓冲层500和窗口层600。
支撑衬底100具有平板形状并且支撑背电极层200、光吸收层300、缓冲层400、高阻缓冲层500和窗口层600。
支撑衬底100可以包括绝缘材料。支撑衬底100可以是玻璃衬底、塑料衬底或金属衬底。更详细地说，支撑衬底100可以是钠钙玻璃。
如果钠钙玻璃衬底用作支撑衬底，那么在太阳能电池的制造过程期间，钠钙玻璃中所含有的钠Na可以扩散到包含CIGS材料的光吸收层300中。在这种情况下，光吸收层300中的电荷浓度可以增大，从而能提高太阳能电池的光电转换效率。
然而，如果钠Na没有均匀地分布在钠钙玻璃衬底的整个区域上方，那么每个电池会具有不一致的光电转换效率，因此会消弱要提高光电转换效率的效果。从而，为了均匀地掺杂钠Na，在衬底上形成阻挡层以阻挡Na扩散，以及额外地形成钠Na层或直接地注入Na离子。
同时，支撑衬底100可以包括含有铝的陶瓷衬底、不锈钢衬底、或具有挠性的聚合物衬底。支撑衬底100可以是透明的、挠性的或刚性的。
背电极层200布置在支撑衬底100上。背电极层200是导电层。
背电极层200允许从太阳能电池的光吸收层300中产生的电荷迁移，使得电流能流出太阳能电池。为此，背电极层200可以具有高导电率和低比电阻。
另外，由于背电极层200与形成光吸收层300的CIGS化合物接触，所以在光吸收层300和背电极层200之间必须形成表现出低接触电阻值的欧姆接触。
此外，当在硫（S）或硒（Se）气氛下进行热处理过程来形成CIGS化合物时，背电极层200必须具有高温稳定性。另外，背电极层200相对于支撑衬底100可以具有优良的粘附特性，使得背电极层200不会由于热膨胀系数差异而从支撑衬底100上脱离。
背电极层200可以包括Mo、Au、Al、Cr、W和Cu中的一种。在上述元素之中，Mo可以满足对于背电极层200所需的上述特性。
背电极层200可以包括至少两层。在这种情况下，至少两层可以利用相同金属或不同金属来形成。根据本实施例，背电极层200包括第一电极层210、阻挡层220和第二电极层230。
第一电极层210可以通过使用Mo来形成并且与支撑衬底100接触。在上述元素之中，Mo具有与支撑衬底100相似的热膨胀系数，因此Mo能有效地结合到支撑衬底100上，从而背电极层200不会从支撑衬底100上脱离。
阻挡层220形成在第一电极层210上。阻挡层220插置于第一电极层210和第二电极层220之间以防止在第二电极层230中所包含的离子扩散到第一电极层210和支撑衬底100中。
另外，阻挡层220可以用作反射层。详细地说，阻挡层220防止入射到太阳能电池中的光被吸收在支撑衬底100中，并朝向光吸收层300反射光，由此提高太阳能电池的效率。反射层可以包括具有50%或以上的反射率的材料。
阻挡层220可以具有在50nm至200nm范围内的厚度。阻挡层220可以包括氮化物，例如TiN或TaN。
第二电极层230形成在阻挡层220上。例如，第二电极层230可以通过使用Mo来形成。第二电极层230可以通过掺杂金属离子，例如钠离子，来形成。
第二电极层230中所含有的钠离子可以扩散到光吸收层300中，使得光吸收层300的电荷浓度能增大，从而提高太阳能电池的光电转换效率。
钠离子可以扩散到支撑衬底100和第一电极层210以及光吸收层300中。然而，阻挡层220阻挡钠离子，因此能有效地控制钠离子，使得光吸收层300中的电荷浓度能有效地增大。
因此，可以提高开路电压Voc和填充因子。另外，由于可以提高光吸收层300中的电荷浓度，所以可以降低透射光的损失，从而可以减小光吸收层300的厚度。
第二电极层230可以具有对应于背电极层200的总厚度基础上1%至3%的厚度，而背电极层200可以具有大约1μm或更小的厚度。
光吸收层300可以包括组I-III-VI族化合物。例如，光吸收层300可以包括Cu(In,Ga)Se2(CIGS)晶体结构、Cu(In)Se2晶体结构、或Cu(Ga)Se2晶体结构。
光吸收层300具有在大约1eV至大约1.8eV范围内的能带隙。
缓冲层400布置于光吸收层300上。缓冲层400包括CdS并且具有在大约2.2eV至大约2.4eV范围内的能带隙。
高阻缓冲层500布置在缓冲层400上。高阻缓冲层500可以包括iZnO，其是未掺杂杂质的氧化锌。高阻缓冲层500具有在大约3.1eV至大约3.3eV范围内的能带隙。
窗口层600布置在高阻缓冲层500上。窗口层600是透明导电层。另外，窗口层600具有比背电极层200的电阻高的电阻。
窗口层600包括氧化物。例如，窗口层600可以包括氧化锌、氧化铟锡（ITO）或氧化铟锌（IZO）。
另外，氧化物可以包括导电掺杂剂，例如Al、Al2O3、Mg或Ga。详细地说，窗口层600可以包括掺Al氧化锌（AZO）或掺Ga氧化锌（GZO）。
窗口具有与背电极的形状相对应的形状。例如，窗口是按带状图案的形式排列的。与此相反，窗口也能按矩阵形式排列。
如上所述，背电极层200包括第一电极层210、阻挡层220和第二电极层230，并且在第二电极层230中所含有的钠离子由于阻挡层220而扩散到光吸收层300，因此可以有效地控制钠离子，从而增大了光吸收层300中的电荷浓度。另外，因为透射光的损失会由于光吸收层300中的电荷浓度的提高而减小，所以可以提高光效率，从而能减小光吸收层300的厚度并能提高产率。
图2至6是示出根据实施例的制造太阳能电池装置的过程的剖视图。可以通过使用Mo来沉积第一电极层210。可以通过PVD（物理气相沉积）过程或电镀过程来形成第一电极层210。
另外，在支撑衬底100和第一电极层210之间可以形成附加层，诸如扩散阻挡层。
然后，在第一电极层210上顺序地形成阻挡层220和第二电极层230。可以通过CVD过程来形成阻挡层220，但本实施例不限于此。
可以通过使用Mo来沉积第二电极层230，并且在已通过PVD过程或电镀过程形成第二电极层230之后，可以将金属离子掺杂到第二电极层230中。
参考图4，在背电极层200上形成光吸收层300。
可以通过溅射过程或蒸镀过程来形成光吸收层300。
例如，同时或单独地蒸发Cu、In、Ga和Se以形成基于CIGS的光吸收层300，或者在形成金属前驱层之后可以通过硒化过程来形成光吸收层300。
详细地说，通过利用Cu靶、In靶和Ga靶来执行溅射过程，在背电极层200上形成金属前驱层。
然后，执行硒化过程以形成基于CIGS的光吸收层300。
另外，可以同时地执行利用Cu靶、In靶和Ga靶的溅射过程和硒化过程。
此外，通过硒化过程和仅利用Cu和In靶或Cu和Ga靶的溅射过程，可以形成基于CIS或基于CIG的光吸收层300。
参考图5，在光吸收层300上形成缓冲层400和高阻缓冲层500。
缓冲层400可以通过CBD（化学浴沉积）过程形成。例如，在已形成光吸收层300之后，把光吸收层300浸入含有要形成CdS的材料的溶液中，使得含有CdS的缓冲层400形成在光吸收层300上。
此后，通过溅射过程在缓冲层400上沉积氧化锌，由此形成高阻缓冲层500。
缓冲层400和高阻缓冲层500可以具有薄的厚度。例如，缓冲层400和高阻缓冲层500可以具有在大约1nm至大约80nm范围内的厚度。
参考图6，在高阻缓冲层500上形成窗口层600。通过在高阻缓冲层500上沉积透明导电材料能形成窗口层600。例如，该透明导电材料包括掺Al氧化锌、掺In氧化锌或掺In氧化锌。
工业实用性
如上所述，通过根据本实施例的太阳能电池装置的制造方法，可以制造出能够提高产率和可靠性的含有背电极的太阳能电池装置。
说明书中所涉及的“一个实施例”、“实施例”、“示例性实施例”等，表示结合实施例描述的特定特征、结构或特性均包括在本发明的至少一个实施例中。说明书中出现于各处的这些短语并不一定都涉及同一个实施例。此外，当结合任何实施例描述特定特征、结构或特性时，都认为其落在本领域技术人员结合其它实施例就可以实现这些特征、结构或特性的范围内。
虽然参考本发明的多个示例性实施例而对实施例进行了描述，但应理解的是，本领域普通技术人员可以推导出落在此公开原理的精神和范围内的大量的其它变化和实施例。更具体地，可以在此公开、附图以及所附权利要求书的范围内对组件和/或主要组合设置中的设置进行各种改变与变化。除了组件和/或设置的改变与变化之外，其他应用对本领域技术人员而言也是显而易见的。

Claims (3)

1.一种太阳能电池装置，包括：
衬底；
在所述衬底上的包含钼的背电极层；
在所述背电极层上的光吸收层；
在所述光吸收层上的缓冲层；
在所述缓冲层上的高阻缓冲层；以及
在所述高阻缓冲层上的窗口层，
其中，所述背电极层包括在所述衬底上的第一电极层、在所述第一电极层上的阻挡层和在所述阻挡层上的第二电极层，
其中，所述背电极层具有1μm或更小的厚度，
其中，所述阻挡层具有在50nm至200nm范围内的厚度，
其中，所述第二电极层的厚度与基于所述背电极层的厚度的1％至30％对应，
其中，所述衬底为钠钙玻璃，
其中，所述第一电极层和所述第二电极层包含钼，
其中，所述第二电极层包含钠离子，
其中，所述第二电极层通过掺杂钠离子形成，
其中，所述第二电极层与所述光吸收层直接接触，
其中，所述阻挡层置于所述第一电极层与所述第二电极层之间，
其中，所述缓冲层和所述高阻缓冲层具有在1nm到80nm范围内的厚度，
其中，所述阻挡层具有50％或大于50％的反射率。
2.如权利要求1的太阳能电池装置，其中，所述阻挡层包括氮化物。
3.如权利要求2的太阳能电池装置，其中，所述氮化物包括TiN和TaN中的至少一种。
CN201180052958.XA 2011-01-27 2011-11-21 太阳能电池装置及其制造方法 Expired - Fee Related CN103189997B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0008468 2011-01-27
KR1020110008468A KR101219948B1 (ko) 2011-01-27 2011-01-27 태양광 발전장치 및 제조방법
PCT/KR2011/008875 WO2012102470A1 (en) 2011-01-27 2011-11-21 Solar cell apparatus and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN103189997A CN103189997A (zh) 2013-07-03
CN103189997B true CN103189997B (zh) 2017-11-24

Family

ID=46581014

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180052958.XA Expired - Fee Related CN103189997B (zh) 2011-01-27 2011-11-21 太阳能电池装置及其制造方法

Country Status (6)

Country Link
US (1) US9461187B2 (zh)
EP (1) EP2668666B1 (zh)
JP (1) JP5873881B2 (zh)
KR (1) KR101219948B1 (zh)
CN (1) CN103189997B (zh)
WO (1) WO2012102470A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2982422B1 (fr) * 2011-11-09 2013-11-15 Saint Gobain Substrat conducteur pour cellule photovoltaique
KR101865953B1 (ko) * 2012-09-12 2018-06-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
EP2800144A1 (en) * 2013-05-03 2014-11-05 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module
CN107452818A (zh) * 2017-08-16 2017-12-08 蚌埠兴科玻璃有限公司 一种铜铟镓硒薄膜太阳能电池背电极及其制备方法
CN110416325A (zh) * 2018-04-27 2019-11-05 北京铂阳顶荣光伏科技有限公司 一种薄膜太阳能电池
CN110429142A (zh) * 2018-04-27 2019-11-08 北京铂阳顶荣光伏科技有限公司 一种薄膜太阳能电池的制备方法
CN110034206B (zh) * 2019-04-26 2020-07-10 潮州市亿加光电科技有限公司 一种具有碱金属复合层的cigs太阳能电池及其制备方法
CN110061075B (zh) * 2019-04-26 2020-06-26 圣晖莱南京能源科技有限公司 一种金属Na掺杂的CIGS太阳能电池及其制备方法
CN110112228B (zh) * 2019-04-26 2020-06-05 圣晖莱南京能源科技有限公司 一种阻隔型cigs太阳能电池及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
SE0400631D0 (sv) * 2004-03-11 2004-03-11 Forskarpatent I Uppsala Ab Thin film solar cell and manufacturing method
JP2006080371A (ja) * 2004-09-10 2006-03-23 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
JP2006165386A (ja) 2004-12-09 2006-06-22 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池及びその作製方法
FR2924863B1 (fr) * 2007-12-07 2017-06-16 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere.
KR20100029414A (ko) * 2008-09-08 2010-03-17 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR20100034817A (ko) * 2008-09-25 2010-04-02 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
KR101075721B1 (ko) * 2009-06-04 2011-10-21 삼성전기주식회사 태양전지 및 이의 제조 방법
KR101072101B1 (ko) * 2009-06-30 2011-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101154785B1 (ko) 2009-06-30 2012-06-18 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof

Also Published As

Publication number Publication date
EP2668666A1 (en) 2013-12-04
US20130327397A1 (en) 2013-12-12
JP5873881B2 (ja) 2016-03-01
EP2668666A4 (en) 2017-08-23
EP2668666B1 (en) 2020-09-30
WO2012102470A1 (en) 2012-08-02
KR20120087030A (ko) 2012-08-06
US9461187B2 (en) 2016-10-04
JP2014504035A (ja) 2014-02-13
CN103189997A (zh) 2013-07-03
KR101219948B1 (ko) 2013-01-21

Similar Documents

Publication Publication Date Title
CN103189997B (zh) 太阳能电池装置及其制造方法
CN103718308A (zh) 太阳能电池设备及其制造方法
US9941424B2 (en) Solar cell
US9818902B2 (en) Solar cell and method for manufacturing the same
KR101210046B1 (ko) 태양전지 및 이의 제조방법
KR20120113130A (ko) 태양전지 및 이의 제조방법
CN103339741B (zh) 太阳能电池设备及其制造方法
US20130220398A1 (en) Solar cell and method for manufacturing the same
US20140026954A1 (en) Solar Cell and Method for Manufacturing the Same
KR101210034B1 (ko) 태양전지 및 이의 제조방법
KR101134730B1 (ko) 태양전지 및 이의 제조방법
US20140026957A1 (en) Solar cell and method of fabricating the same
CN105789353A (zh) 具有掺杂缓冲层的太阳能电池和制造太阳能电池的方法
KR101865953B1 (ko) 태양전지 및 이의 제조방법
CN104054182B (zh) 太阳能电池设备及其制造方法
CN103597613A (zh) 太阳能电池及其制造方法
KR101315311B1 (ko) 후면전극 및 이를 포함하는 ｃｉｓ계 태양전지
KR20150031978A (ko) 태양전지
KR20150041927A (ko) 태양전지
KR101349596B1 (ko) 태양전지 및 이의 제조방법
KR101273123B1 (ko) 태양전지 및 이의 제조방법
KR101231398B1 (ko) 태양전지 및 이의 제조방법
KR101326920B1 (ko) 태양전지 및 이의 제조방법
KR102098113B1 (ko) 태양전지
KR101273175B1 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171124

Termination date: 20191121

CF01 Termination of patent right due to non-payment of annual fee