JP5873881B2 - 太陽光発電装置及びその製造方法。 - Google Patents
太陽光発電装置及びその製造方法。 Download PDFInfo
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- JP5873881B2 JP5873881B2 JP2013551887A JP2013551887A JP5873881B2 JP 5873881 B2 JP5873881 B2 JP 5873881B2 JP 2013551887 A JP2013551887 A JP 2013551887A JP 2013551887 A JP2013551887 A JP 2013551887A JP 5873881 B2 JP5873881 B2 JP 5873881B2
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- 238000010248 power generation Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims description 38
- 230000031700 light absorption Effects 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 229910001415 sodium ion Inorganic materials 0.000 claims description 8
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
また、このような太陽光発電装置を製造するために、多数個のセルに分離するためのパターニング工程が進行されなければならない。
Claims (5)
- 基板と、
前記基板の上に配置されるモリブデン(Mo)裏面電極層と、
前記裏面電極層の上に配置される光吸収層と、
前記光吸収層の上に配置されるウィンドウ層と、を含み、
前記裏面電極層は前記基板の上に第1電極層、前記第1電極層の上にバリア層、前記バリア層の上に第2電極層を含み、
前記基板は、ソーダライムガラス基板であり、
前記裏面電極層は、1μm以下の厚さを有し、
前記バリア層は、反射率が50%以上の窒化物を含み、
前記第2電極層は、モリブデンと、前記モリブデンにドーピングされたナトリウムイオンとを含み、
前記第2電極層は、前記光吸収層と直接接触することを特徴とする、太陽光発電装置。 - 前記第1電極層はモリブデンを含むことを特徴とする、請求項1に記載の太陽光発電装置。
- 前記バリア層は50乃至200nmの厚さで形成されることを特徴とする、請求項1に記載の太陽光発電装置。
- 前記第2電極層は前記裏面電極層厚さの1%乃至30%に該当する厚さで形成されることを特徴とする、請求項1に記載の太陽光発電装置。
- 前記窒化物はTiNまたはTaNのうちの少なくとも1つを含むことを特徴とする、請求項1に記載の太陽光発電装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110008468A KR101219948B1 (ko) | 2011-01-27 | 2011-01-27 | 태양광 발전장치 및 제조방법 |
KR10-2011-0008468 | 2011-01-27 | ||
PCT/KR2011/008875 WO2012102470A1 (en) | 2011-01-27 | 2011-11-21 | Solar cell apparatus and method for manufacturing the same |
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Publication Number | Publication Date |
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JP2014504035A JP2014504035A (ja) | 2014-02-13 |
JP5873881B2 true JP5873881B2 (ja) | 2016-03-01 |
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JP2013551887A Expired - Fee Related JP5873881B2 (ja) | 2011-01-27 | 2011-11-21 | 太陽光発電装置及びその製造方法。 |
Country Status (6)
Country | Link |
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US (1) | US9461187B2 (ja) |
EP (1) | EP2668666B1 (ja) |
JP (1) | JP5873881B2 (ja) |
KR (1) | KR101219948B1 (ja) |
CN (1) | CN103189997B (ja) |
WO (1) | WO2012102470A1 (ja) |
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FR2982422B1 (fr) * | 2011-11-09 | 2013-11-15 | Saint Gobain | Substrat conducteur pour cellule photovoltaique |
KR101865953B1 (ko) * | 2012-09-12 | 2018-06-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
EP2800144A1 (en) * | 2013-05-03 | 2014-11-05 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
CN107452818A (zh) * | 2017-08-16 | 2017-12-08 | 蚌埠兴科玻璃有限公司 | 一种铜铟镓硒薄膜太阳能电池背电极及其制备方法 |
CN110429142A (zh) * | 2018-04-27 | 2019-11-08 | 北京铂阳顶荣光伏科技有限公司 | 一种薄膜太阳能电池的制备方法 |
CN110416325A (zh) * | 2018-04-27 | 2019-11-05 | 北京铂阳顶荣光伏科技有限公司 | 一种薄膜太阳能电池 |
CN110034206B (zh) * | 2019-04-26 | 2020-07-10 | 潮州市亿加光电科技有限公司 | 一种具有碱金属复合层的cigs太阳能电池及其制备方法 |
CN110112228B (zh) * | 2019-04-26 | 2020-06-05 | 圣晖莱南京能源科技有限公司 | 一种阻隔型cigs太阳能电池及其制备方法 |
CN110061075B (zh) * | 2019-04-26 | 2020-06-26 | 圣晖莱南京能源科技有限公司 | 一种金属Na掺杂的CIGS太阳能电池及其制备方法 |
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FR2820241B1 (fr) * | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
WO2004032189A2 (en) * | 2002-09-30 | 2004-04-15 | Miasolé | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
SE0400631D0 (sv) * | 2004-03-11 | 2004-03-11 | Forskarpatent I Uppsala Ab | Thin film solar cell and manufacturing method |
JP2006080371A (ja) | 2004-09-10 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 太陽電池及びその製造方法 |
JP2006165386A (ja) * | 2004-12-09 | 2006-06-22 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池及びその作製方法 |
FR2924863B1 (fr) * | 2007-12-07 | 2017-06-16 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere. |
KR20100029414A (ko) * | 2008-09-08 | 2010-03-17 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR20100034817A (ko) * | 2008-09-25 | 2010-04-02 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US8134069B2 (en) * | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
KR101075721B1 (ko) | 2009-06-04 | 2011-10-21 | 삼성전기주식회사 | 태양전지 및 이의 제조 방법 |
KR101154785B1 (ko) | 2009-06-30 | 2012-06-18 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101072101B1 (ko) * | 2009-06-30 | 2011-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
-
2011
- 2011-01-27 KR KR1020110008468A patent/KR101219948B1/ko not_active IP Right Cessation
- 2011-11-21 CN CN201180052958.XA patent/CN103189997B/zh not_active Expired - Fee Related
- 2011-11-21 EP EP11856650.4A patent/EP2668666B1/en active Active
- 2011-11-21 US US13/982,366 patent/US9461187B2/en not_active Expired - Fee Related
- 2011-11-21 WO PCT/KR2011/008875 patent/WO2012102470A1/en active Application Filing
- 2011-11-21 JP JP2013551887A patent/JP5873881B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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EP2668666A4 (en) | 2017-08-23 |
KR20120087030A (ko) | 2012-08-06 |
US20130327397A1 (en) | 2013-12-12 |
KR101219948B1 (ko) | 2013-01-21 |
JP2014504035A (ja) | 2014-02-13 |
EP2668666A1 (en) | 2013-12-04 |
EP2668666B1 (en) | 2020-09-30 |
CN103189997B (zh) | 2017-11-24 |
WO2012102470A1 (en) | 2012-08-02 |
US9461187B2 (en) | 2016-10-04 |
CN103189997A (zh) | 2013-07-03 |
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