JP5881717B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP5881717B2 JP5881717B2 JP2013532701A JP2013532701A JP5881717B2 JP 5881717 B2 JP5881717 B2 JP 5881717B2 JP 2013532701 A JP2013532701 A JP 2013532701A JP 2013532701 A JP2013532701 A JP 2013532701A JP 5881717 B2 JP5881717 B2 JP 5881717B2
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- buffer layer
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- solar cell
- forming
- oxygen content
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000031700 light absorption Effects 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 12
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 12
- 239000005083 Zinc sulfide Substances 0.000 claims description 10
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 10
- 238000000224 chemical solution deposition Methods 0.000 claims description 6
- 238000004151 rapid thermal annealing Methods 0.000 claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (5)
- 基板に第1電極層を形成するステップと、
前記第1電極層の上に光吸収層を形成するステップと、
前記光吸収層の上にバッファ層を形成するステップと、
前記バッファ層の酸素含有量を減少させるように熱処理するステップと、
前記バッファ層の上に第2電極層を形成するステップと、
を含み、
前記熱処理するステップは、急速アニーリング(rapid thermal annealing;RTA)工程によって行われ、
前記熱処理するステップの熱処理温度が250乃至400℃であり、
前記熱処理するステップにより熱処理されたバッファ層の酸素含有量が2乃至5at%であり、相対的な効率が90%以上であることを特徴とする、太陽電池の製造方法。 - 前記熱処理するステップは、真空または水素雰囲気下で遂行されることを特徴とする、請求項1に記載の太陽電池の製造方法。
- 前記熱処理するステップの以前に前記バッファ層の酸素含有量が6at%以上であることを特徴とする、請求項1または2に記載の太陽電池の製造方法。
- 前記バッファ層を形成するステップでは、化学溶液成長法(chemical bath depositon;CBD)により前記バッファ層を形成することを特徴とする、請求項1ないし3のいずれか一項に記載の太陽電池の製造方法。
- 前記バッファ層が硫化カドミウム(CdS)または硫化亜鉛(ZnS)を含むことを特徴とする、請求項1ないし4のいずれか一項に記載の太陽電池の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0099001 | 2010-10-11 | ||
KR1020100099001A KR101181095B1 (ko) | 2010-10-11 | 2010-10-11 | 태양 전지 및 이의 제조 방법 |
PCT/KR2011/003121 WO2012050280A1 (ko) | 2010-10-11 | 2011-04-27 | 태양 전지 및 이의 제조 방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013539242A JP2013539242A (ja) | 2013-10-17 |
JP2013539242A5 JP2013539242A5 (ja) | 2014-06-19 |
JP5881717B2 true JP5881717B2 (ja) | 2016-03-09 |
Family
ID=45938473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013532701A Expired - Fee Related JP5881717B2 (ja) | 2010-10-11 | 2011-04-27 | 太陽電池及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2506313B1 (ja) |
JP (1) | JP5881717B2 (ja) |
KR (1) | KR101181095B1 (ja) |
CN (1) | CN103098233B (ja) |
WO (1) | WO2012050280A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103952678B (zh) * | 2014-04-11 | 2016-04-06 | 浙江大学 | 一种高迁移率的掺氟氧化锌基透明导电薄膜的制备方法 |
JP6224532B2 (ja) * | 2014-06-27 | 2017-11-01 | 京セラ株式会社 | 光電変換装置 |
KR102262616B1 (ko) | 2019-05-20 | 2021-06-08 | 영남대학교 산학협력단 | Uv를 이용한 태양전지 버퍼층의 제조 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0604801B1 (en) * | 1992-12-30 | 1999-10-06 | Siemens Solar Industries International, Inc. | Method of making a thin film heterojunction solar cell |
US6169246B1 (en) | 1998-09-08 | 2001-01-02 | Midwest Research Institute | Photovoltaic devices comprising zinc stannate buffer layer and method for making |
JP4264801B2 (ja) * | 2002-07-12 | 2009-05-20 | 本田技研工業株式会社 | 化合物薄膜太陽電池の製造方法 |
JP2005228975A (ja) * | 2004-02-13 | 2005-08-25 | Matsushita Electric Ind Co Ltd | 太陽電池 |
KR20080009346A (ko) * | 2006-07-24 | 2008-01-29 | 주식회사 엘지화학 | 태양전지 버퍼층의 제조방법 |
KR100895977B1 (ko) * | 2008-04-10 | 2009-05-07 | 키스코홀딩스주식회사 | 실리콘 박막 태양전지 및 제조방법 |
JP2009170928A (ja) | 2009-02-20 | 2009-07-30 | Showa Shell Sekiyu Kk | Cis系太陽電池の製造方法 |
KR20100098008A (ko) * | 2009-02-27 | 2010-09-06 | 삼성전자주식회사 | 태양전지 |
CN201562684U (zh) * | 2009-11-03 | 2010-08-25 | 福建钧石能源有限公司 | 硅基薄膜太阳能电池 |
JP5517696B2 (ja) * | 2010-03-29 | 2014-06-11 | 京セラ株式会社 | 光電変換装置および光電変換装置の製造方法 |
JP4615067B1 (ja) * | 2010-07-06 | 2011-01-19 | 富士フイルム株式会社 | 光電変換素子及びそれを備えた太陽電池 |
-
2010
- 2010-10-11 KR KR1020100099001A patent/KR101181095B1/ko not_active IP Right Cessation
-
2011
- 2011-04-27 CN CN201180043761.XA patent/CN103098233B/zh not_active Expired - Fee Related
- 2011-04-27 EP EP11832667.7A patent/EP2506313B1/en active Active
- 2011-04-27 WO PCT/KR2011/003121 patent/WO2012050280A1/ko active Application Filing
- 2011-04-27 JP JP2013532701A patent/JP5881717B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2506313B1 (en) | 2020-08-19 |
EP2506313A1 (en) | 2012-10-03 |
KR101181095B1 (ko) | 2012-09-07 |
KR20120037320A (ko) | 2012-04-19 |
WO2012050280A1 (ko) | 2012-04-19 |
CN103098233B (zh) | 2016-04-13 |
CN103098233A (zh) | 2013-05-08 |
EP2506313A4 (en) | 2017-08-09 |
JP2013539242A (ja) | 2013-10-17 |
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