CN103339741B - 太阳能电池设备及其制造方法 - Google Patents

太阳能电池设备及其制造方法 Download PDF

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CN103339741B
CN103339741B CN201180066301.9A CN201180066301A CN103339741B CN 103339741 B CN103339741 B CN 103339741B CN 201180066301 A CN201180066301 A CN 201180066301A CN 103339741 B CN103339741 B CN 103339741B
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高政焕
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Abstract

根据实施例的太阳能电池包括背侧电极层、在所述背侧电极层上的光吸收层、在所述光吸收层上的缓冲层、在所述缓冲层上的窗口层和在所述背侧电极层下的粘结层。

Description

太阳能电池设备及其制造方法
技术领域
本发明涉及一种太阳能电池设备及其制造方法。
背景技术
近来，随着对能量的需求增大，正在进行将太阳能转换为电能的太阳能电池的开发。
具体地说，广泛使用CIGS基太阳能电池，即，p-n异质结装置，其具有包括玻璃衬底的衬底结构、金属背侧电极层、p型CIGS基光吸收层、缓冲层和n型透明电极层等。
而且，为了提高太阳能电池的效率，正在进行各种研究。
发明内容
技术问题
通常，当在包含金属箔材料的生长衬底上形成太阳能电池时，随着形成处理的进行，在诸如光吸收层形成的高温处理期间在衬底中包括的材料可能扩散到光吸收层内，由此降低了太阳能电池的效率。
因此，在本实施例中，使用玻璃作为生长衬底来进行在高温下生长的CIGS膜形成处理，并且通过电解方法来去除在硬玻璃衬底上形成的牺牲层。
因此，本发明的一些方面的优点是在背侧电极层下形成粘结层和柔性衬底，由此提供具有良好的曲线和改善的光电转换效率和可靠性的太阳能电池。
技术解决方案
根据实施例的太阳能电池包括背侧电极层、在所述背侧电极层上的光吸收层、在所述光吸收层上的缓冲层、在所述缓冲层上的窗口层和在所述背侧电极层下的粘结层。
根据实施例的一种太阳能电池的制造方法包括：在生长衬底上形成牺牲层；在所述牺牲层上形成背侧电极层；在所述背侧电极层上形成光吸收层；在所述光吸收层上形成顶部电极层；在所述顶部电极层上形成片材；以及通过对所述太阳能电池执行电解，来去除所述牺牲层，使得暴露所述背侧电极层的底表面。
有益效果
在实施例中，提供了太阳能电池及其制造方法，所述太阳能电池具有柔性和改善的光电转换效率和可靠性。
附图说明
图1是根据本发明的一个实施例的太阳能电池的截面图。
图2至图7示出根据本发明的一个实施例的太阳能电池的制造方法。
具体实施方式
在实施例的描述中，在将每一个衬底、层、膜或电极等描述为形成在其“之上”或“之下”的情况下，“之上”或“之下”也表示一个部件“直接地”或“间接地（通过其他部件）”形成到部件。也基于附图来描述关于在每一个部件“之上”或“之下”的标准。在附图中，每一个部件的大小可能被夸大地描述，并且不表示实际上应用的大小。
图1是示出根据本发明的一个实施例的太阳能电池的截面图。图2至图7示出根据本发明的一个实施例的太阳能电池的制造方法。
图1，根据实施例的太阳能电池包括：衬底110；在衬底110上的粘结层250；在粘结层250上的背侧电极层200；在背侧电极层200上的光吸收层300；在光吸收层300上的缓冲层400和高抗性缓冲层500；在高抗性缓冲层500上的窗口层600；以及在窗口层600上的第一保护层700。
而且，可以在衬底110下形成第二保护层800。
衬底110具有板形状，并且支撑背侧电极层200、光吸收层300、缓冲层400、高抗性缓冲层500和窗口层600。
衬底110可以是柔性衬底，诸如PET（聚对苯二甲酸乙二酯），但是不限于此。
背侧电极层200布置在衬底110上。背侧电极层200变为导电层。背侧电极层200允许从太阳能电池的光吸收层300产生的电荷移动，使得电流可以在太阳能电池外部流动。
背侧电极层200需要具有高导电率和小的电阻系数，以执行上面的功能。
而且，当在形成CIGS化合物时伴随的在硫（S）或硒（Se）的气氛下进行热处理时，应当将背侧电极层200保持得具有高温度稳定性。
可以通过钼（Mo）、金（Au）、铝（Al）、铬（Cr）、钨（W）和铜（Cu）的任何一种来形成这样的背侧电极层200。其中，具体地说，钼（Mo）使得能够与其他元素作比较一般能够满足背侧电极层200所需的特性。
背侧电极层200可以包括至少两层。在该情况下，可以通过相同的金属或彼此不同的金属来形成每层。
牺牲层105部分（参见图3）可以保持在背侧电极层200之下。例如，当形成包含Cu的牺牲层105时，可以在背侧电极层200之下存在Cu的一些金属晶体。
而且，可以在衬底110下形成第二保护层800。第二保护层800扮演用于保护太阳能电池以防外部的水和空气的角色。可以通过聚合物层来形成第二保护层800。可以形成例如包括诸如PVF、涤纶、腈纶、EVA的材料的第二保护层800。
而且，背侧电极层200可以直接地连接到第二保护层800，而不用形成衬底110。
可以在背侧电极层200上形成光吸收层300。光吸收层300包括p型半导体化合物。更详细地，光吸收层300包括Ⅰ-Ⅲ-Ⅵ族基化合物。例如，光吸收层300可以具有Cu-In-Ga-Se基（Cu(In,Ga)Se2；CIGS基）或Cu-Ga-Se基晶体结构。
缓冲层400和高抗性缓冲层500可以形成在光吸收层300上。具有作为光吸收层300的CIGS化合物的太阳能电池在p型半导体和n型半导体之间形成p-n结，该p型半导体即CIGS化合物薄膜，并且n型半导体即窗口层600薄膜。
然而，因为两种材料在晶格常数和带隙能量上具有很大差别，所以为了形成好的结，需要缓冲层来允许带隙位于两种材料的中间。
形成缓冲层400的材料是CdS和ZnS等，并且CdS在太阳能电池的电力产生效率上相对较好。高抗性缓冲层500包括未掺杂杂质的氧化锌（i-ZnO）。高抗性缓冲层500的能量带隙是大约3.1电子伏特至3.3电子伏特。
窗口层600形成在高抗性缓冲层500上。窗口层600是透明的并导电的层。而且，窗口层600的电阻大于背侧电极层200的电阻。
窗口层600包括氧化物。例如，窗口层600可以包括氧化锌、氧化铟锡、ITO或氧化铟锌和IZO等。
而且，该氧化物可以包括导电杂质，诸如铝（Al）、氧化铝（AL2O3）、镁（Mg）或镓（Ga）。更详细地，窗口层600可以包括：掺杂铝的氧化锌，AZO；掺杂B的氧化锌，BZO；或掺杂Ga的氧化锌，GZO。
第一保护层700和第二保护层800可以形成在太阳能电池的顶和底表面上。
图2至图7是示出根据本发明的一个实施例的太阳能电池的制造方法的截面图。关于本制造方法的说明引用前述的关于太阳能电池的说明。
在图2中，牺牲层105在生长衬底100上生长。
生长衬底100可以是绝缘体。生长衬底100可以是玻璃衬底。更详细地，生长衬底100可以是苏打石灰玻璃衬底。
当生长衬底100变为苏打石灰玻璃时，在苏打石灰中包含的Na可以在太阳能电池的制造处理期间扩散到由CIGS形成的光吸收层300内，这使得光吸收层300的电荷浓度增大。这可以变为可以增大太阳能电池的光电转换效率的因素。
另外，诸如氧化铝、不锈钢和柔性聚合物等的陶瓷衬底被用作生长衬底100的材料。生长衬底100可以是透明的和刚性的或柔性的。
牺牲层105可以包括金属。例如，牺牲层105可以包括诸如Cu、Ag和Au等的元素。
接下来，在牺牲层105上形成背侧电极层200。可以通过钼（Mo）、金（Au）、铝（Al）、铬（Cr）、钨（W）和铜（Cu）的任何一种来形成背侧电极层200。其中，具体地说，因为与其他元素相比在与支撑衬底100的热膨胀系数上具有小的差别，所以Mo具有良好的粘结性，并且可以防止脱层。因此，钼（Mo）使得通常可以满足背侧电极层200所需的特性。
背侧电极层200可以包括至少两层。在该情况下，可以通过相同的金属或彼此不同的金属来形成每层。可以通过PVD（物理气相沉积）或电镀来形成背侧电极层200。
在图3中，光吸收层300形成在背侧电极层200上。
广泛地通过下述方式来制造光吸收层300：用于在同时或分别蒸发诸如Cu、In、Ga和Se的同时形成Cu-In-Ga-Se基（Cu(In,Ga)Se2；CIGS基）的光吸收层300的方法；以及，在形成金属前驱膜后使用硒化处理的方法。
当在形成金属前驱膜后细分硒化处理时，通过使用Cu靶材、In靶材和Ga靶材的溅射处理来在背侧电极层200上形成金属前驱膜。
然后，金属前驱膜通过硒化处理来变为Cu-In-Ga-Se基(Cu(In,Ga)Se2；CIGS基)的光吸收层300。
相反，与硒化处理同时地执行使用Cu靶材、In靶材和Ga靶材的溅射处理。
相反，可以通过仅使用Cu靶材和In靶材或Cu靶材和Ga目标的溅射处理与硒化处理来形成CIS基或CIG基光吸收层300。
然后，通过溅射处理和化学浴沉积（CBD）方法等来沉积硫化镉以形成缓冲层400。
然后，通过溅射处理在缓冲层400上形成氧化锌以形成高抗性缓冲层500。
缓冲层400和高抗性缓冲层500被沉积小的厚度。例如，缓冲层400和高抗性缓冲层500的厚度是大约1nm至100nm。
接下来，在高抗性缓冲层500上形成窗口600。即，通过在高抗性缓冲层500上沉积透明导电材料来形成窗口层600。详细而言，可以通过沉积掺杂了铝的氧化锌来形成窗口层600，而不限于此。
接下来，在图4中，在窗口600上形成第一保护层700。可以通过沉积方法来形成第一保护层700。第一保护层700包括EVA片材，用于防止当执行电解时对于太阳能电池的面板的损害。
在图5和图6中，能够通过在水溶液中执行牺牲层105的电解来去除牺牲层105。
在本发明的实施例中，可以根据向牺牲层105包括的材料来形成水溶液。
例如，当牺牲层105包括铜（Cu）时，该水溶液可以使用包含铜（Cu）的硫化铜（Cu2SO4）。
在将太阳能电池浸入包括水溶液的电解单元后，其阳极（+）连接到背侧电极层200，并且阴极连接到与太阳能电池分开的独立金属板107，由此执行电解。
当阴极连接到背侧电极层200时，包含金属的牺牲层105难以执行电解，因此，优选的是，将阳极连接到背侧电极层200。
通过电解来蚀刻牺牲层105，使得牺牲层105和生长衬底100与背侧电极层200分离。通过电解蚀刻牺牲层105，但是作为晶体形式的一些牺牲层105可能留在背侧电极层200中。
图6是示出在通过电解来去除牺牲层105后的太阳能电池的截面图。通过电解处理来暴露背侧电极层200。在牺牲层105中包括的一些材料可以例如作为晶体形式留在背侧电极层200下。
在图7中，在背侧电极层200下涂敷粘结剂，以形成粘结层250。粘结层250允许改善背侧电极层200和衬底110的粘结。可以使用诸如环氧树脂或陶瓷系列粘结剂的聚合物材料来形成粘结层250。
衬底110可以是柔性衬底，诸如PET（聚对苯二甲酸乙二酯），但是不限于此。而且，可以不形成衬底110。
而且，可以在衬底110下形成第二保护层800。第二保护层800可以从外部保护太阳能电池，并且可以被与第一保护层700相同或不同的材料形成。第一和第二保护层800可以由硅氧烷、PDAS（（聚二烷基硅氧烷）或EVA（乙烯醋酸乙烯酯）的膜类型构成。
当可以不形成衬底110时，背侧电极层200可以接触第二保护层800。
如上所述，在这个实施例中，使用玻璃作为生长衬底来进行在高温下生长的CIGS膜形成处理，并且，通过电解方法来去除在硬玻璃衬底上形成的牺牲层105。
然后，在背侧电极层200下形成粘结层250和衬底110，由此提供具有良好的曲线和改善的光电转换效率和可靠性的太阳能电池。
可以明白，本发明所属的领域中的普通技术人员可以以其他特定形式来执行本发明，而不改变技术思想或本质特性。因此，如上所述的实施例在所有方面用于例示的目的，但是不限于它们。通过所附的权利要求而不是详细说明来表示本发明的范围，并且从权利要求的含义、范围和等同内容的思想导出的任何改变和变化应当被解释为被包括在本发明的范围中。
另外，虽然在上面示出和描述了本发明的优选实施例，但是本发明不限于此上述特定实施例，并且被本领域内的技术人员在没有在权利要求中要求保护的本发明的主旨的情况下不同地修改，使得不能与本发明的技术思想或观点分离地明白修改的实施例。

Claims (3)

1.一种太阳能电池，包括：
第二保护层；
在第二保护层上的柔性衬底；
在该柔性衬底上的粘结层；
在该粘结层上的背侧电极层；
在所述背侧电极层上的光吸收层；
在所述光吸收层上的缓冲层；
在所述缓冲层上高抗性缓冲层；
在所述高抗性缓冲层上的窗口层；
在该窗口层上的第一保护层；
铜的金属晶体插置在该背侧电极层与所述粘结层之间；
其中该柔性衬底包括PET，即，聚对苯二甲酸乙二酯；
其中该第二保护层包括乙烯醋酸乙烯酯；
其中该背侧电极层包括钼，
所述缓冲层和该高抗性缓冲层的厚度是1nm至100nm；
其中，该光吸收层包含Na。
2.根据权利要求1所述的太阳能电池，其中，所述背侧电极层的一个表面包括聚合物层；
其中，该该粘结层包含环氧树脂材料。
3.根据权利要求1所述的太阳能电池，其中所述背侧电极层包括至少两层，
其中，第一和第二保护层包含相同材料。
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