CN103597613A - 太阳能电池及其制造方法 - Google Patents
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Abstract
本发明提供一种太阳能电池及其制造方法。所述太阳能电池包括：基板；在所述基板上的背电极层；在所述背电极层上的吸光层；在所述吸光层上的缓冲层；以及在所述缓冲层上的窗口层，其中所述吸光层包含多个孔隙。
Description
技术领域
本公开涉及一种太阳能电池及其制造方法。
背景技术
近来，随着能源需求的增加，将太阳能转换成电能的太阳能电池的开发正在进行中。
特别是，铜铟镓硒（CIGS）基太阳能电池，即一种pn异质结器件，其具有包括玻璃基板的基板结构、金属背电极层、p型CIGS基吸光层、高电阻缓冲层和n型窗口层，现今正在被广泛应用。
此外，为了提高太阳能电池电特性，诸如低电阻和高透光率，进行了各式研究。
发明内容
技术问题
实施例提供一种效率提高且生产率高的太阳能电池。
技术方案
在一个实施例中，一种太阳能电池包括：基板；所述基板上的背电极层；所述背电极层上的吸光层；所述吸光层上的缓冲层；以及所述缓冲层上的窗口层，其中所述吸光层包括多个孔隙。
在另一个实施例中，一种太阳能电池的制造方法包括：在基板上形成背电极层；在所述背电极层上形成具有多个孔隙的吸光层；在所述吸光层上形成缓冲层；以及在所述缓冲层上形成窗口层。
有益效果
根据实施例，提供一种太阳能电池，通过增加穿过包含孔隙的吸光层的入射光的散射，使得所吸收的光的量增加。
另外，由于在形成吸光层的同时也就形成了孔隙，因此不需要其他额外的制造工艺。因此，有效地提高了生产率。
附图说明
图1是根据实施例的太阳能电池的平面图；
图2至图5是示出根据实施例的太阳能电池的制造方法的截面图。
具体实施方式
在实施例的描述中，应理解，当将层（或膜）、区域、图案或结构称为位于另一层（或膜）、区域、垫或图案上时，术语“在……上”和“在……下”包括直接与间接两种含义。进一步来说，将参照附图来描述关于各个层的上下关系。附图中，为了使描述简便且清晰，每一层的厚度或大小被夸大，省略或示意性示出。同样，每一个元件的大小不能完整地反映实际大小。
图1是根据实施例的太阳能电池的平面图。参照图1，太阳能电池板包括支撑基板100、背电极层200、孔隙360、吸光层、缓冲层400及窗口层500。
支撑基板100呈板形并且支撑着背电极层200、吸光层300、缓冲层400及窗口层500。
支撑基板100可以是绝缘体。支撑基板100可以是玻璃基板，塑料基板或金属基板。更详言之，支撑基板100可以是钠钙玻璃基板。
如果支撑基板100由钠钙玻璃形成，则在太阳能电池的制造过程中，钠钙玻璃中的Na可能会散布到由铜铟镓硒（CIGS）形成的吸光层300中。因此，吸光层300的电荷浓度会增加。这可能是增加太阳能电池光电转换效率的一个因素。
除此以外，支撑基板100可以由诸如氧化铝的陶瓷，不锈钢和柔性聚合物形成。支撑基板100可以是透明的，刚性或柔性的。
背电极层200布置在支撑基板100上。背电极层200是导电层。背电极层200通过转运在太阳能电池的吸光层300中产生的电荷，能够使得电流流到太阳能电池之外。为了执行上述动作，背电极层200应该具有高电导率，即低电阻率。
此外，由于背电极层200与用于形成吸光层的CIGS化合物相接触，所以吸光层300和背电极层200应该具有低接触电阻值的欧姆接触。
另外，在形成CIGS化合物时进行的在S或Se氛围下的热处理期间，背电极层200需要保持高温稳定性。另外，背电极层200应当相对于支撑基板100具有良好的结合力，以防止由于热膨胀系数差异而在背电极层200与支撑基板100之间出现脱层现象。
背电极层200可以由Mo、Au、Al、Cr、W及Cu中的一种形成。在这些材料中，尤其是Mo，较之于其他元素来说，具有相对于支撑基板100的更小的热膨胀系数差异，所以由于其优良的结合力其可以防止脱层现象，并且能满足背电极层200的整体特性要求。
背电极层200可以包括至少两个层。此时，各个层可以由相同或不同的金属形成。
吸光层300可以形成在背电极层200上。吸光层300包含p型半导体化合物。更详言之，吸光层300包含I-III-VI族基化合物。例如，吸光层300可以具有Cu(In,Ga)Se2(CIGS)基晶体结构、铜铟硒基晶体结构或铜镓硒晶体结构。
吸光层300的能带隙可以是约1.1eV至约1.2eV。
孔隙360可以形成在吸光层300中。孔隙360可以使用聚苯乙烯（PS）或聚甲基丙烯酸甲酯（PMMA）的聚合物来形成。
孔隙360具有约30nm至约1200nm的直径W1，并且形成为散射一定波长的光。多个孔隙360可以形成为具有相同直径，或者可以形成为在某一直径范围内具有不同的容积。
在本实施例中，孔隙360可以形成为球形或多边形，但并不限于此。
入射到吸光层300的光可以由孔隙360散射。由于散射，光更有可能在平行方向中被反射，使得光电转换效率可以提高。
也就是说，由于散射，光停留在吸光层300中的时间更长，所以增加了被吸收的光的总量。
吸光层300的厚度可以形成为约1.5μm至约5μm。
如果孔隙360的容积小，则光散射效应会太小；而如果大大地增加孔隙360的容积，则光吸收区域会减少。因此，孔隙360的容积可以是吸光层300的整个体积的约5%至约35%，并且更优选地可以是约20%至约25%。
缓冲层400布置在吸光层300上。包括CIGS基化合物吸光层300的太阳能电池在p型半导体的CIGS化合物层与n型半导体的透明电极层500之间形成pn结。但是，由于两种材料在晶格常数和带隙能量上有很大的差异，需要具有带隙在两种材料中间的缓冲层来形成良好的结。
用于形成缓冲层400的材料包括CdS和ZnS，并且在太阳能电池发电效率方面，CdS较优。
窗口层500布置在缓冲层400上。窗口层500是透明导电层。而且，窗口层500具有高于背电极层200的电阻。
窗口层500包含氧化物。例如，窗口层500可以包含氧化锌，铟锡氧化物（ITO）或铟锌氧化物（IZO）。
此外，上述氧化物可以包含导电杂质，诸如Al、Al2O3、Mg或Ga。更详言之，窗口层500可以包含掺杂Al的氧化锌（AZO）或者掺杂Ga的氧化锌（GZO）。
根据该太阳能电池，通过形成具有孔隙的吸光层，可以提高入射至吸光层的光的吸收率。
此外，这些孔隙是在形成该吸光层时同时形成的，从而提高了生产率。
图2至图5是示出根据实施例的太阳能电池制造方法的截面图。制造方法的说明会涉及上述太阳能电池的说明。上述太阳能电池的说明与制造方法的说明实质上是结合的。
参照图2，可以在支撑基板100上形成背电极层200。背电极层200可以使用Mo来沉积。背电极层200可以通过物理气相沉积（PVD）或者电镀的方法形成。
此外，在支撑基板100与背电极层200之间可以插入诸如防扩散层的附加层。
参照图3和图4，在背电极层200上形成吸光层300。
例如，通过同时或者分别蒸镀铜、铟、镓和硒或者在形成金属前体层之后进行硒化工艺来形成CIGS基吸光层300的方法，目前被广泛使用。
与此不同，可以通过仅使用铜靶和铟靶或仅使用铜靶和镓靶的溅镀工艺和硒化工艺来形成CIS基或者CIG基吸光层300。
根据本实施例，通过同时或者分别蒸镀铜、铟、镓和硒来形成吸光层300。
微珠350可以形成为包括诸如PS或PMMA的聚合物。微珠350可以形成为具有约30nm至约600nm的直径，并且可以具有在某一直径范围内的不同直径。
然后，在约150℃至约650℃，更优选地，约300℃至约500℃的温度下，对微珠350进行热处理约5分钟至约60分钟的时间。由于热处理，可以将氧与吸光层300的形成材料310相分离，即与CuO、In2O3、Ga2O3和硒分离；并且聚合物，即微珠350的形成材料可以被去除。由于聚合物被去除，微珠350变成加工出的孔隙360。由于聚合物被去除，在微珠350中可能留下一些碳含量。
参照图5，在吸光层300上形成缓冲层400和高电阻缓冲层500。用于形成缓冲层400的材料包括CdS和ZnS，但是在太阳能电池发电效率方面，CdS相对较优。CdS层由n型半导体形成，并且它可以通过掺杂In、Ga和Al而具有低电阻值。
缓冲层400可以通过溅镀工艺或者化学浴沉积（CBD）来沉积并形成。
然后，将窗口层500布置在缓冲层400上。窗口层500是透明导电层。而且，窗口层500具有高于背电极层200的电阻。例如，窗口层500的电阻可以是背电极层200电阻的约10倍至约200倍。
窗口层500包含氧化物。例如，窗口层500可以包含氧化锌，铟锡氧化物（ITO）,或铟锌氧化物（IZO）。
此外，上述氧化物可以包含诸如Al、Al2O3、Mg或Ga的导电杂质。更详言之，窗口层500可以包含掺杂Al的氧化锌（AZO）或掺杂Ga的氧化锌（GZO）。
如上文所述，由于包含孔隙的吸光层的存在，增加了光散射，使得被吸收进太阳能电池的光总量增加。
而且，由于孔隙是在形成吸光层时同时形成的，不需要额外的制造过程。因此，在生产率方面也是有效的。
此外，在上述实施例中所描述的特征、结构和效应被包括在至少一个实施例中，但是本发明不限于此。进一步，本领域的技术人员可以将各个实施例中的特征、结构和效应进行组合和修改以用于其他实施例。因此，关于组合和修改的内容应当被理解为本发明的范围内。
尽管已参考本发明的数个说明性实施例描述了本发明，但是应理解，本领域的技术人员可以构思出归入本发明原理的精神和范围内的众多其他修改和实施例。更具体地讲，在本说明书、附图和所附权利要求书的范围内的主题组合布置的组成部分和/或布置上的各种变化和修改是可能的。除了在组成部分和/或布置上的变化和修改以外，替代使用对于本领域的技术人员也是显然的。
Claims (10)
1.一种太阳能电池，包括：
基板；
在所述基板上的背电极层；
在所述背电极层上的吸光层；
在所述吸光层上的缓冲层；以及
在所述缓冲层上的窗口层，
其中，所述吸光层包含多个孔隙。
2.根据权利要求1所述的太阳能电池，其中，所述多个孔隙中的每一个具有约30nm至约600nm的直径。
3.根据权利要求1所述的太阳能电池，其中，所述孔隙呈球形。
4.根据权利要求1所述的太阳能电池，其中，所述吸光层具有约1.5μm至约5μm的厚度。
5.根据权利要求1所述的太阳能电池，其中，所述吸光层包含聚合物。
6.根据权利要求5所述的太阳能电池，其中，所述聚合物包含聚苯乙烯（PS）或聚甲基丙烯酸甲酯（PMMA）。
7.根据权利要求1所述的太阳能电池，其中，所述吸光层包含碳。
8.一种太阳能电池的制造方法，包括：
在基板上形成背电极层；
在所述背电极层上形成具有多个孔隙的吸光层；
在所述吸光层上形成缓冲层；以及
在所述缓冲层上形成窗口层。
9.根据权利要求8所述的方法，其中，通过在约150℃至约500℃的温度下对铜、铟、镓、硒和聚合物进行热处理来形成所述吸光层。
10.根据权利要求9所述的方法，其中，所述聚合物包含聚苯乙烯（PS）或聚甲基丙烯酸甲酯（PMMA）。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0032959 | 2011-04-08 | ||
| KR1020110032959A KR101220060B1 (ko) | 2011-04-08 | 2011-04-08 | 태양전지 및 이의 제조방법 |
| PCT/KR2012/002605 WO2012138167A2 (en) | 2011-04-08 | 2012-04-05 | Solar cell and method of fabricating the same |
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| CN103597613A true CN103597613A (zh) | 2014-02-19 |
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| EP (1) | EP2695202A4 (zh) |
| KR (1) | KR101220060B1 (zh) |
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| WO (1) | WO2012138167A2 (zh) |
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| JPWO2016017617A1 (ja) * | 2014-07-29 | 2017-04-27 | 京セラ株式会社 | 光電変換装置およびタンデム型光電変換装置ならびに光電変換装置アレイ |
| JP6864642B2 (ja) * | 2018-03-22 | 2021-04-28 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
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| US6946597B2 (en) | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
| US7700464B2 (en) * | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
| FR2881881B1 (fr) * | 2005-02-04 | 2007-06-08 | Imra Europ Sa Sa | Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs |
| KR20070044982A (ko) * | 2005-10-26 | 2007-05-02 | 삼성전자주식회사 | 이차전지 기능 복합형 전기변색 소자 및 그 제조방법 |
| JP2008047614A (ja) * | 2006-08-11 | 2008-02-28 | Showa Shell Sekiyu Kk | 吸着材を利用した改良型太陽電池モジュール |
| US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
| CN102318077B (zh) * | 2009-09-29 | 2013-08-14 | 京瓷株式会社 | 光电转换装置 |
| JP4937379B2 (ja) * | 2010-06-11 | 2012-05-23 | 昭和シェル石油株式会社 | 薄膜太陽電池 |
| CN102859713A (zh) * | 2010-07-29 | 2013-01-02 | 京瓷株式会社 | 光电转换装置 |
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| Publication number | Publication date |
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| WO2012138167A2 (en) | 2012-10-11 |
| EP2695202A4 (en) | 2014-10-29 |
| WO2012138167A3 (en) | 2013-01-10 |
| EP2695202A2 (en) | 2014-02-12 |
| KR101220060B1 (ko) | 2013-01-21 |
| KR20120115036A (ko) | 2012-10-17 |
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