FR2881881B1 - Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs - Google Patents

Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs

Info

Publication number
FR2881881B1
FR2881881B1 FR0501113A FR0501113A FR2881881B1 FR 2881881 B1 FR2881881 B1 FR 2881881B1 FR 0501113 A FR0501113 A FR 0501113A FR 0501113 A FR0501113 A FR 0501113A FR 2881881 B1 FR2881881 B1 FR 2881881B1
Authority
FR
France
Prior art keywords
interpenetrated
configuration
semiconductor materials
photovoltaic device
solid photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0501113A
Other languages
English (en)
Other versions
FR2881881A1 (fr
Inventor
Christophe Chone
Rocio Bayon
Alain Jacob
Gerardo Larramona
Daisuke Sakakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IMRA Europe SAS
Original Assignee
IMRA Europe SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IMRA Europe SAS filed Critical IMRA Europe SAS
Priority to FR0501113A priority Critical patent/FR2881881B1/fr
Priority to JP2006026482A priority patent/JP5194364B2/ja
Publication of FR2881881A1 publication Critical patent/FR2881881A1/fr
Application granted granted Critical
Publication of FR2881881B1 publication Critical patent/FR2881881B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FR0501113A 2005-02-04 2005-02-04 Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs Expired - Fee Related FR2881881B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0501113A FR2881881B1 (fr) 2005-02-04 2005-02-04 Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs
JP2006026482A JP5194364B2 (ja) 2005-02-04 2006-02-03 新規の吸収体または半導体材料を含む貫入形態のソリッドステート光電池デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0501113A FR2881881B1 (fr) 2005-02-04 2005-02-04 Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs

Publications (2)

Publication Number Publication Date
FR2881881A1 FR2881881A1 (fr) 2006-08-11
FR2881881B1 true FR2881881B1 (fr) 2007-06-08

Family

ID=35056975

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0501113A Expired - Fee Related FR2881881B1 (fr) 2005-02-04 2005-02-04 Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs

Country Status (2)

Country Link
JP (1) JP5194364B2 (fr)
FR (1) FR2881881B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2899724B1 (fr) * 2006-04-11 2009-10-02 Imra Europ Sas Soc Par Actions Dispositifs photovoltaiques tout solides comportant une couche d'absorbeur a base de sulfure de bismuth ou de sulfure d'etain
FR2917898B1 (fr) * 2007-06-21 2009-10-30 Imra Europ Sas Soc Par Actions Dispositif photovoltaique tout solide comprenant une couche d'absorption a base de compose(s) de sulfure d'antimoine et d'argent ou de compose(s) de sulfure d'antimoine et de cuivre
FR2973575B1 (fr) * 2011-04-01 2013-12-20 Imra Europe Sas Dispositif photovoltaique tout solide comprenant une couche d'absorbeur a base de sulfure d'etain et d'antimoine
KR101220060B1 (ko) * 2011-04-08 2013-01-21 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2013206901A (ja) * 2012-03-27 2013-10-07 Toyota Central R&D Labs Inc 太陽電池
CN117101598B (zh) * 2023-10-24 2024-03-15 南昌航空大学 一种钼基吸附材料的制备方法及其产品和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002042909A (ja) * 2000-07-21 2002-02-08 Fuji Photo Film Co Ltd 光電変換素子および光電池
EP1176646A1 (fr) * 2000-07-28 2002-01-30 Ecole Polytechnique Féderale de Lausanne (EPFL) Hétérojonction à l'état solide et cellule photovoltaique sensibilisé à l'état solide
JP3453597B2 (ja) * 2000-11-02 2003-10-06 独立行政法人産業技術総合研究所 半導体複合薄膜電極およびこれを用いた太陽電池
JP2002176187A (ja) * 2000-12-07 2002-06-21 Seiko Epson Corp 半導体および太陽電池
JP2002313445A (ja) * 2001-04-18 2002-10-25 Hitachi Maxell Ltd 光電変換素子
JP4094319B2 (ja) * 2002-03-28 2008-06-04 旭化成株式会社 薄膜層を有する複合半導体
JP2003292796A (ja) * 2002-04-02 2003-10-15 Toyo Ink Mfg Co Ltd レーザーマーキング用樹脂組成物、樹脂成型物及びレーザーマーキング方法
AU2003262523A1 (en) * 2002-08-13 2004-03-03 Agfa-Gevaert Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles
US6929970B2 (en) * 2002-09-12 2005-08-16 Agfa-Gevaert Process for preparing nano-porous metal oxide semiconductor layers

Also Published As

Publication number Publication date
JP5194364B2 (ja) 2013-05-08
JP2006216958A (ja) 2006-08-17
FR2881881A1 (fr) 2006-08-11

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20151030