CN104011872A - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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CN104011872A
CN104011872A CN201280063587.XA CN201280063587A CN104011872A CN 104011872 A CN104011872 A CN 104011872A CN 201280063587 A CN201280063587 A CN 201280063587A CN 104011872 A CN104011872 A CN 104011872A
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林真宇
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Abstract

根据本公开的一种太阳能电池包括：背电极层；以及，在所述背电极层上的光吸收层，其中，所述光吸收层包括未掺杂区和在所述未掺杂区上的掺杂区，并且所述掺杂区包括锌。根据本公开的一种制造太阳能电池的方法包括：在基板上形成背电极层；在所述背电极层上形成初步光吸收层；在所述初步光吸收层上形成掺杂剂供应层；并且，扩散所述掺杂剂供应层。

Description

太阳能电池及其制造方法
技术领域
实施例涉及太阳能电池及其制造方法。
背景技术
制造太阳能电池来用于太阳光电力产生的方法如下。首先，在制备基板后，背电极层形成在基板上，并且通过激光被图案化，由此形成多个背电极。
其后，在背电极上依序形成光吸收层、缓冲层和高电阻缓冲层。诸如下述方案的各种方案已经被广泛使用以便形成光吸收层：通过同时或分别蒸发Cu、In、Ga和Se来形成基于Cu(In,Ga)Se2(CIGS)的光吸收层的方案；以及，在已经形成金属前体膜后执行硒化工艺的方案。光吸收层的带隙能量在大约1eV至1.8eV的范围中。
然后，通过溅射工艺来在光吸收层上形成包括硫化镉(CdS)的缓冲层。该缓冲层的带隙能量可以在大约2.2eV至2.4eV的范围中。其后，通过溅射工艺在缓冲层上形成包括氧化锌(ZnO)的高电阻缓冲层。高电阻缓冲层的带隙能量在大约3.1eV至大约3.3eV的范围中。
其后，可以在光吸收层、缓冲层和高电阻缓冲层中形成凹槽图案。
然后，透明的导电材料被层叠在高电阻缓冲层上，并且被填充在凹槽图案中。因此，在高电阻缓冲层上形成透明电极层，并且在凹槽图案中形成连接导线。构成该透明电极层和连接导线的材料可以包括掺杂铝的氧化锌(AZO)。该透明电极层的带隙能量可以在大约3.1eV至大约3.3eV的范围中。
然后，在透明电极层中形成凹槽图案，使得可以形成多个太阳能电池。该透明电极和高电阻缓冲器分别对应于电池。可以以条形或矩阵的形式来提供该透明电极和高电阻缓冲器。
透明电极和背电极彼此不对齐，使得透明电极通过连接导线电连接到背电极。因此，太阳能电池可以彼此电串联。
如上所述，为了将太阳光转换为电能，已经制造和使用了各种太阳能电池设备。在韩国未审查专利公布No.10-2008-0088744中公开了该太阳能电池设备之一。
发明内容
技术问题
实施例提供了能够表现出改善的性能的太阳能电池。
对于问题的解决方案
根据实施例，提供了一种太阳能电池，包括：背电极层；以及，在所述背电极层上的光吸收层，其中，所述光吸收层包括未掺杂区和在所述未掺杂区上的掺杂区，并且所述掺杂区包括锌。
根据一个实施例，提供了一种制造太阳能电池的方法，包括：在基板上形成背电极层；在所述背电极层上形成初步光吸收层；在所述初步光吸收层上形成掺杂剂供应层；并且，扩散所述掺杂剂供应层。
本发明的有益效果
在根据实施例的太阳能电池中包括的光吸收层包括掺杂区和未掺杂区。光吸收层的掺杂区域与光吸收层的未掺杂区域一起形成异类PN结，使得可以减少在界面表面出的重新组合。因此，可以改善开路电压。光吸收层的掺杂区和未掺杂区具有彼此类似的带隙能量，使得可以增大电子的产出率。
在根据实施例的太阳能电池中包括的缓冲层包括氧化镁锌。因此，根据实施例的太阳能电池可以与具有仅包括硫化镉的缓冲层的、根据现有技术的太阳能电池作比较具有改善的开路电压。
另外，根据实施例的太阳能电池是无Cd的，因此可以通过环境友好的方案来制造太阳能电池，而不被环境法规限制。
附图说明
图1是示出根据实施例的太阳能电池的一个截面的截面图；
图2是将实施例的开路电压Voc与比较示例的开路电压作比较的图形；并且
图3至6是示出根据实施例的制造太阳能电池的方法的截面图。
具体实施方式
在实施例的描述中，可以明白，当层(或膜)、区域、图案或结构被称为在另一层(或膜)、另一个区域、另一个图案或另一个结构“上”或“下”时，它可以“直接地”或“间接地”在该另一层(或膜)、区域、图案或结构上，或者也可以存在一个或多个介入层。已经参考附图描述了层的这样的位置。
可以将层(或膜)、区域、图案或结构的大小或厚度修改得夸大以用于说明和清楚的目的。该大小不完全反映实际大小。
以下，将参考附图来描述该的示例性实施例。
现在参考图1来详细描述根据实施例的太阳能电池。图1是根据实施例的太阳能电池的一个截面的截面图。
参见图1，根据实施例的太阳能电池包括支撑基板100、背电极层200、光吸收层300、缓冲层400和前电极层500。
支撑基板100具有平板形状，并且支撑背电极层200、光吸收层300、缓冲层400和前电极层500。
支撑基板100可以包括绝缘体。支撑基板100可以是玻璃基板、诸如聚合物的塑料基板或金属基板。同时，支撑基板100可以包括钠钙玻璃。支撑基板100可以是透明的、柔性的或硬的。
背电极层200被设置在支撑基板100的顶表面上。背电极层200是导电层。例如，用于背电极层200的材料可以包括诸如钼(Mo)的金属。
背电极层200可以包括至少两层。在该情况下，可以通过使用相同金属或不同金属来形成至少两层。
在背电极层200上设置光吸收层300。光吸收层300可以包括I-III-VI族化合物。例如，光吸收层300可以具有Cu(In,Ga)Se2(CIGS)晶体结构、Cu(In)Se2晶体结构或Cu(Ga)Se2晶体结构。
光吸收层300的至少一部分被掺杂锌(Zn)。详细而言，光吸收层300包括未掺杂区310和掺杂区320，并且掺杂区320包括锌(Zn)。在该情况下，包含的锌(Zn)的重量百分比是0.1％至3％。
未掺杂区310的厚度可以小于掺杂区320的厚度的50％。
光吸收层300的带隙能量在大约1eV至1.8eV的范围中。
在实施例中，因为光吸收层300的未掺杂区310与光吸收层300的掺杂区320一起形成异类PN结，所以可以减少在界面表面出的重新组合使得可以提高开路电压。光吸收层300的未掺杂区310的带隙能量类似于光吸收层300的掺杂区320的带隙能量，使得可以增大电子的产出率。
在光吸收层300上设置了缓冲层400。缓冲层400直接接触光吸收层300。
缓冲层400可以包括氧化镁锌(MgZnO)。
氧化镁锌(MgZnO)被表达为下面的化学式，
化学式：
(MgxZn1-x)O
其中，x满足下面的等式1
等式1
0.3≤x≤0.7
同时，氧化镁锌(MgZnO)的质量比可以满足下面的等式2
等式2
Mg/Zn≤0.7
参见图2，根据实施例的太阳能电池与具有仅包括硫化镉的缓冲层的、根据现有技术的太阳能电池作比较具有改善的开路电压Voc，这将在后面描述。
根据实施例的太阳能电池是无Cd的，因此可以通过有益于环境的方案来制造太阳能电池，而不被环境法规限制。
在光吸收层300上设置了前电极层500。详细而言，在缓冲层400上设置了前电极层500。
前电极层500被设置在缓冲层400上，并且是透明的。
例如，用于前电极层500的材料可以包括掺杂Al的氧化锌(AZO)、氧化铟锌(IZO)或氧化铟锡(ITO)。
前电极层500的厚度可以在大约500nm至大约1.5微米的范围中。前电极层500包括AZO，可以以重量百分比大约1.5％至大约3.5％的数量来掺杂铝(Al)。前电极层500是导电层。
以下，将参考图3至6来描述根据实施例的制造太阳能电池的方法。在下面的说明中，为了清楚和简单的说明，将省略与如上所述的那些类似或相同的结构和组件的细节。
图3至6是示出根据实施例的制造太阳能电池的方法的截面图。
根据实施例的制造太阳能电池的方法可以包括形成背电极层200的步骤、形成初步光吸收层351的步骤、形成掺杂剂供应层352的步骤和形成光吸收层的步骤。
首先，参见图3，在支撑基板100上沉积诸如钼(Mo)的金属，从而形成背电极层200。可以通过具有不同处理条件的两个处理来形成背电极层200。
可以在支撑基板100和背电极层200之间插入诸如扩散防止层的另一层。
然后，在背电极层200上形成初步光吸收层351。初步光吸收层351可以具有基于Cu-In-Ga-Se的结构。例如，同时或分别蒸发Cu、In、Ga和Se来形成基于CIGS的初步光吸收层351，或者，可以在形成金属前体层后通过硒化处理来形成初步光吸收层351。
详细而言，通过使用Cu靶、In靶和Ga靶执行溅射工艺来在背电极层200上形成金属前体层。
然后，执行硒化工艺以形成基于CIGS的初步光吸收层351。
另外，可以同时执行使用Cu靶、In靶和Ga靶的溅射工艺和硒化工艺。
其后，参见图4，可以在初步光吸收层351上形成掺杂剂供应层352。掺杂剂供应层352包括锌化合物。详细而言，掺杂剂供应层352可以包括二甲基锌((CH3)2Zn)。可以通过惰性载气来沉积掺杂剂供应层352。
接下来，参见图5，执行形成光吸收层300的步骤。在形成光吸收层300的步骤中，可以通过扩散掺杂剂供应层352来形成光吸收层300。详细而言，掺杂剂供应层352可以被扩散到初步光吸收层351内。
可以在等于或小于350℃的温度下执行形成光吸收层300的步骤。
执行形成光吸收层300的步骤的时间等于或小于600分钟。因此，可以通过防止在掺杂剂供应层352中包含的锌(Zn)到达初步光吸收层351的底表面来保证上面的掺杂区320。
参见图6，在形成光吸收层300后，执行形成缓冲层400的步骤。可以通过经由物理气相沉积(PVD)沉积氧化镁锌来形成缓冲层400。
在缓冲层400上沉积前电极层500。
例如，可以通过经由溅射工艺在缓冲层400的顶表面上沉积诸如AZO的透明导电材料来形成前电极层500。
在本说明书中对于“一个实施例”、“实施例”、“示例实施例”等的任何引用表示在本发明的至少一个实施例中包括结合实施例描述的特定特征、结构或特性。在本说明书中的各个位置中的这样的短语的出现不必然全部指的是同一实施例。而且，当结合任何实施例描述特定特征、结构或特性时，认为它在本领域内的技术人员实现与实施例的其他一些相关的这样的特征、结构或特性的范围内。
虽然已经参考其多个说明性实施例而描述了实施例，但是应当明白，本领域内的技术人员可以设计落在本公开的精神和原理范围内的多种其他修改和实施例。更具体地，在本公开、附图和所附的权利要求的范围内的主组合布置的部件部分和/或布置中，各种改变和修改是可能的。除了在部件部分和/或布置中的改变和修改之外，替代使用也对于本领域内的技术人员是显然的。
实验示例
执行溅射工艺来以大约1微米的厚度在钠钙玻璃基板上沉积钼(Mo)。接下来，通过蒸发在背电极上沉积大约1微米的厚度的CuIn0.3Ga0.7Se2，使得形成光吸收层。其后，执行溅射工艺以便在光吸收层上沉积50nm厚的MgZnO，使得形成缓冲层。随后，以大约70nm的厚度在缓冲层上沉积没有杂质的氧化锌(ZnO)，使得形成高电阻缓冲层。其后，执行溅射工艺以使用被掺杂大约重量3％的铝的氧化锌靶来在高电阻缓冲层上形成前电极层。
比较示例
类似于实验示例，在形成光吸收层后，通过化学裕沉积(CBD)在光吸收层上沉积大约70nm厚度的CdS。其后，类似于实验示例，形成高电阻缓冲层和前电极层。
参见图2，与比较示例的太阳能电池作比较，根据实验示例的太阳能电池可以改善开路电压Voc。

Claims (17)

1.一种太阳能电池，包括：
背电极层；以及，
在所述背电极层上的光吸收层，
其中，所述光吸收层包括未掺杂区和在所述未掺杂区上的掺杂区，
其中，所述掺杂区包括锌。
2.根据权利要求1所述的太阳能电池，其中，在所述掺杂区中的所述锌的重量百分比在0.1％至3％的范围中。
3.根据权利要求1所述的太阳能电池，进一步包括在所述光吸收层上的缓冲层，其中，所述缓冲层包括氧化镁锌(MgZnO)。
4.根据权利要求3所述的太阳能电池，其中，通过化学式(MgxZn1-x)O来表达氧化镁锌(MgZnO)。
5.根据权利要求4所述的太阳能电池，其中，x满足等式0.3≤x≤0.7。
6.根据权利要求2所述的太阳能电池设备，其中，是掺杂区的厚度与所述未掺杂区的厚度的比率小于0.5:1。
7.一种制造太阳能电池的方法，所述方法包括：
在基板上形成背电极层；
在所述背电极层上形成初步光吸收层；
在所述初步光吸收层上形成掺杂剂供应层；并且，
扩散所述掺杂剂供应层。
8.根据权利要求7所述的方法，其中，所述初步光吸收层包括基于Cu-In-Ga-Se的结构。
9.根据权利要求7所述的方法，其中，所述掺杂剂供应层包括锌化合物。
10.根据权利要求7所述的方法，其中，所述掺杂剂供应层包括二甲基锌。
11.根据权利要求7所述的方法，其中，在小于或等于350℃的温度下执行所述掺杂剂供应层的所述扩散。
12.根据权利要求7所述的方法，其中，执行所述掺杂剂供应层的所述扩散的时间小于或等于600秒。
13.根据权利要求7所述的方法，进一步包括：在形成所述掺杂剂供应层后形成缓冲层，其中，所述缓冲层包括氧化镁锌。
14.根据权利要求7所述的方法，其中，所述掺杂剂供应层的所述扩散包括向所述初步光吸收层内扩散所述掺杂剂供应。
15.根据权利要求7所述的方法，其中，所述掺杂剂供应层的所述扩散包括形成包括掺杂区的光吸收层。
16.根据权利要求15所述的方法，其中，所述掺杂区包括锌。
17.根据权利要求16所述的方法，其中，在所述掺杂区中的所述锌的量的重量百分比在0.1％至3％的范围中。
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