CN104106144B - 太阳能电池组件 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 27
- 210000001142 back Anatomy 0.000 claims abstract description 24
- 238000005192 partition Methods 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229960001296 zinc oxide Drugs 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010141 design making Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 description 1
- 229910052683 pyrite Inorganic materials 0.000 description 1
- 239000011028 pyrite Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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Abstract
本发明公开了一种太阳能电池组件及其制造方法。太阳能电池组件包括支撑基板和所述支撑基板上的多个太阳能电池。所述太阳能电池的每一个包括所述支撑基板上的背电极层；所述背电极层上的光吸收层；所述光吸收层上的缓冲层；所述缓冲层上的导电层；以及所述导电层上的前电极层。
Description
技术领域
实施例涉及一种太阳能电池组件及其制造方法。
背景技术
最近，由于严重的环境污染和矿物燃料的缺乏，新可再生能源的发展已经变得越来越重要和令人感兴趣。在新可再生资源中，因为太阳能电池极少引起环境污染并且具有半永久的生命周期并且太阳能电池存在无限资源，从而太阳能电池作为一种解决未来能源问题的无污染能源得到关注。
太阳能电池可以定义为利用光照射在P-N结二极管上时产生电子的光伏效应将光能转化成电能的装置。根据构成结型二极管的材料，太阳能电池可以分为硅太阳能电池、主要包含I-III-VI族化合物或III-V族化合物的化合物半导体太阳能电池、染料敏化太阳能电池以及有机太阳能电池。
由作为I-III-VI族黄铜基化合物半导体中的一种的CIGS(CuInGaSe)构成的太阳能电池表现出极佳的光吸收性、在薄的厚度下更高的光电转换效率、以及极佳的电光稳定性，所以CIGS太阳能电池作为传统的硅太阳能电池的代替品得到关注。
一般来说，CIGS太阳能电池可以通过顺序地在玻璃基板上形成背电极层、光吸收层以及前电极层来制造。同时，根据现有技术，用于前电极层的掺杂氧化锌(AZO)在较低的能耗下厚厚地沉积以降低电阻，使透光率可能降低，工艺过程可能不稳定，材料成本和设备投资成本可能增加。另外，由于太阳能电池的宽度变大，增加了前电极的串联电阻Rs，导致电导率可能降低。
发明内容
技术问题
实施例提供了一种具有提高的电子收集能力和光电转换效率的太阳能组 件及其制造方法。
技术方案
根据实施例所述，提供了一种太阳能电池组件，包括支撑基板和所述支撑基板上的多个太阳能电池。所述太阳能电池的每一个包括所述支撑基板上的背电极层、所述背电极层上的光吸收层、所述光吸收层上的缓冲层、所述缓冲层上的导电层、以及所述导电层上的前电极层。
根据实施例所述，提供了一种太阳能电池组件的制造方法，包括在支撑基板上形成背电极层；在所述背电极层上形成光吸收层；在所述光吸收层上形成缓冲层；在所述缓冲层上形成导电层；以及在所述导电层上形成前电极层。
有益效果
根据实施例所述的太阳能电池组件，可以形成导电性比前电极层更佳的导电层，使得更多数量的从光吸收层生成的电子可以被收集。因此，根据实施例所述的太阳能电池组件的光电转换效率能够增强。
根据实施例所述，由于导电层之故，与现有技术相比，前电极层可以以更薄的厚度制造，使根据实施例所述的太阳能电池的透光率能够以增强。另外，由于前电极层的厚度能够减少，因此能够减少太阳能电池的制造成本。
附图说明
图1至图7是剖视图，示出了根据实施例所述的太阳能电池组件的制造方法。
具体实施方式
在实施例的描述中，应该明白，当某一基板、层、膜或者电极被称作是在另一基板、另一层、另一膜或另一电极的“上方”或“下方”时，它可以是“直接”或者“间接”位于该另一基板、层、膜或电极的上方或下方，或者也可以存在一个或多个中间层。每一组件的这种位置参照附图进行了描述。 附图所示的每一组件的厚度和尺寸可以为了方便或清晰的目的被夸大、省略、或者示意性地绘出。另外，元件的尺寸并不完全反映实际尺寸。
图1至图7是剖视图，示出了根据实施例所述的太阳能电池组件的制造方法。在下文中，将参看图1至图7详细描述根据实施例所述的太阳能电池组件及其制造方法。
参看图1，背电极层200形成在支撑基板100上。
支撑基板100具有平板结构并支撑背电极层200、光吸收层300、缓冲层400、高阻缓冲层500、导电层600以及前电极层700。
支撑基板100可以为透明的，且为刚性的或者柔性的。支撑基板100可以为绝缘体。例如，支撑基板100可以为玻璃基板、塑料基板或者金属基板。更详细地说，支撑基板100可以是钠钙玻璃基板。
另外，支撑基板100可以包括陶瓷基板，例如氧化铝、不锈钢或者具有柔韧性的聚合物。
背电极层200可以包括钼(Mo)、金(Au)、铝(Al)、铬(Cr)、钨(W)以及铜(Cu)中的至少一种。在上述材料中，Mo元素具有与支撑基板100相似的热膨胀系数，从而Mo可以提高粘结性并防止背电极层200从支撑基板100上剥落。进一步的，背电极层200可以包括两层或者更多层。多个层可以分别由相同或不同的材料形成。
背电极层200可以通过PVD(物理气相沉积)或电镀形成。另外，例如扩散阻挡层的附加层可以插在支撑基板100与背电极层200之间。
背电极层200可以通过第一分隔图案P1被图案化。另外，第一分隔图案P1可以具有多种形状，例如图1所示的条纹形状，以及矩阵形状。
参看图2，光吸收层300、缓冲层400以及高阻缓冲层500顺序形成在背电极层200上。
光吸收层300可以通过多种方案形成，比如通过同时或分别蒸发Cu、In、Ga和Se以形成Cu(In,Ga)Se2(CIGS)基光吸收层300的方案、先形成金属前体层再进行硒化工艺的方案。
至于先形成金属前体层再进行硒化工艺的细节，利用Cu靶、In靶以及Ga靶通过溅射工艺在背电极层200上形成金属前体层。
然后，使金属前体层受到硒化工艺，从而形成Cu(In,Ga)Se2(CIGS)基 光吸收层300。
另外，利用Cu靶、In靶和Ga靶的溅射工艺可以与硒化工艺同时进行。
进一步讲，通过只用Cu靶与In靶或者只用Cu靶与Ga靶的溅射工艺以及硒化工艺可以形成CIS或CIG基光吸收层300。
缓冲层400形成在光吸收层300上。缓冲层可以包括CdS、ZnS、InXSY或者InXSeYZn(O,OH)。缓冲层400可以具有在约2.2eV到约2.4eV内的能带间隙。可以通过CBD(化学浴沉积)方案在光吸收层300上沉积CdS以形成缓冲层400。高阻缓冲层500形成在缓冲层400上。高阻缓冲层500包括不掺有杂质的i-ZnO。高阻缓冲层500可以具有在约3.1eV到3.3eV内的能带间隙。另外，高阻缓冲层500可以省略。高阻缓冲层500可以通过溅射工艺在缓冲层400上沉积ZnO形成。
参看图3至图5，导电层600形成在高阻缓冲层500上，并且第二分隔图案P2形成为穿过光吸收层300、缓冲层400、高阻缓冲层500以及导电层600。
首先，导电层600形成在高阻缓冲层500上。导电层600可以包括多个导线610。导线610可以相互以规律间隔来隔开，如图3至图5所示，但本实施例不限于此。例如，导线610可以相互以不规律间隔来隔开。
导线610由导电材料形成。导线610平行于前电极层700中电荷传输的方向延伸。因此，导线610可以增强前电极层700中电荷的移动性。另外，导线610可以提高电荷从光吸收层300到外部(也就是说，到前电极层700)的移动性。因此，导线610可以提高前电极层700的导电性。为了实现上述功能，与前电极层700相比，导线610可以具有更高的电导率和更低的电阻系数。
例如，导线610可以包括银(Ag)、铝(Al)、钙(Ca)、铬(Cr)、铁(Fe)、钴(Co)、镍(Ni)、铜(Cu)、钼(Mo)、钌(Ru)、铟(In)、以及钨(W)中的至少一种。详细地说，导线610可以只包括Ag、Al以及Cu中的一种，但本实施例不限于此。
每一导线610可以具有在约50nm到约100nm范围内的厚度h1。另外，每一导线610可以具有在约1nm到约30nm范围内的宽度w1。也就是说，导线610可以按照纳米尺寸制造。具有纳米尺寸的导线610可以允许光线入射到太阳能电池组件，以通过太阳能电池传输而不会反射或阻挡入射光。
另外，导线610可以最小化电流损失并降低前电极层700的厚度。也就是说，由于具有极佳导电性的导线610被当作电极，因此前电极层700可以以更薄的厚度制造。例如，与根据现有技术所述的前电极层的厚度相比。根据实施例所述的前电极层700的厚度可以降低约30％到约50％，但本实施例不限于此。因此，根据实施例所述的太阳能电池可以具有增强的透光率，并可以增加短路电流密度(Jsc)，以使得太阳能电池的光电转换效率能够增强。
在导电层600形成在高阻缓冲层500上后，第二分隔图案P2形成为穿过光吸收层300、缓冲层400、高阻缓冲层500以及导电层600。
第二分隔图案P2可以通过机械方案或激光辐射方案形成。由于第二分隔图案P2之故，使背电极层200部分地露出。
参看图6和图7，前电极层700形成在导电层600上。前电极层700通过第二分隔图案P2与背电极层200电连接。
前电极层700可以由透明导电材料形成。另外，前电极层700可以具有N型半导体的特性。前电极层700与缓冲层400一起形成N型半导体，从而与作为P型半导体的光吸收层300形成PN结。例如，前电极层700可以包括掺铝氧化锌(AZO)。
如上所述，与根据现有技术所述的前电极层的厚度相比，根据实施例所述的前电极层700的厚度可以降低约30％到约50％。例如，前电极层700的厚度可以在约100nm到约500nm的范围内，但本实施例不限于此。
前电极层700可以通过在导电层600上层叠透明导电材料形成。透明导电材料可以包括掺铝或掺硼氧化锌。形成前电极层700的工艺可以在温度从常温到约300℃的范围内进行。例如，前电极层700可以通过溅射工艺或化学气相沉积形成。更详细地说，为了通过溅射形成前电极层700，可以通过使用ZnO靶执行RF溅射工艺，或使用Zn靶执行反应溅射工艺。
然后，形成穿过前电极层700的第三分隔图案P3。第三分隔图案P3可以形成为穿过导电层600、高阻缓冲层500、缓冲层400以及光吸收层300以及前电极层700。根据实施例所述的太阳能电池组件由于第三分隔图案P3之故，可以限定为多个太阳能电池C1、C2、C3…以及Cn。第三分隔图案P3可以通过机械工艺或激光辐射工艺形成，使得背电极层200的顶端表面可以露出。
参看图7，在太阳能电池C1、C2、C3…以及Cn中，电荷传输沿着第一 方向进行。另外，导线610在沿着电荷传输方向的第一方向a上延伸。导线610可以沿着与太阳能电池C1、C2、C3…以及Cn的延伸方向不同的方向延伸。例如，导线610可以沿着第一方向延伸，而太阳能电池C1、C2、C3…以及Cn可沿着第二方向b延伸。第一方向a可以垂直于第二方向a，但本实施例不限于此。
在本说明书中每提及“一个实施例”、“某个实施例”、“示例性实施例”等时意味着，结合该实施例描述的具体特征、结构、或特性包含在本发明的至少一个实施例中。在本说明书中不同地方出现的此类短语不一定都是指同一实施例。另外，当结合任何实施例描述具体特征、结构、或特性时，应当认为，结合其他实施例实现该特征、结构、或特性落入本领域技术人员的能力范围内。
虽然参照本发明的若干说明性实施例对实施例进行了描述，但应该知道，本领域技术人员可以构思出很多其它的变型和实施例，这些变型和实施例落入本发明原理的精神和范围内。更具体地讲，在本发明公开、附图和所附权利要求书的范围内，可以对主题组合结构的组成部分和/或排列作出各种改变和变型。除了所述组成部分和/或排列的改变和变型之外，其它用途对于本领域技术人员而言也是显然的。
Claims (10)
1.一种太阳能电池组件，包括：
支撑基板；以及
所述支撑基板上的多个太阳能电池，
其中，所述太阳能电池的每一个包括：
所述支撑基板上的背电极层；
所述背电极层上的光吸收层；
所述光吸收层上的缓冲层；
所述缓冲层上的导电层；以及
所述导电层上的前电极层，
第一分隔图案，形成为穿过所述背电极层，
第二分隔图案，形成为穿过所述光吸收层、所述缓冲层、所述导电层，
第三分隔图案，形成为穿过所述光吸收层、所述缓冲层、所述导电层、所述前电极层，
其中，所述导电层包括在所述太阳能电池中沿着与电荷传输方向平行的第一方向延伸的多根导线，
其中，每根导线具有在1nm到30nm范围内的宽度。
2.如权利要求1所述的太阳能电池组件，其中，所述导线包括银、铝、钙、铬、铁、钴、镍、铜、钼、钌、铟、或钨中的至少一种。
3.如权利要求1所述的太阳能电池组件，其中，所述太阳能电池分别沿着垂直于所述第一方向的第二方向延伸。
4.如权利要求1所述的太阳能电池组件，其中，所述导线的每根导线具有在1nm到30nm范围内的宽度和在50nm到100nm范围内的厚度。
5.如权利要求1所述的太阳能电池组件，其中，所述前电极层通过所述第二分隔图案与所述背电极层电连接。
6.如权利要求1所述的太阳能电池组件，其中，所述导线相互以规律间隔来隔开。
7.如权利要求1所述的太阳能电池组件，其中，所述导线相互以不规律间隔来隔开。
8.如权利要求1所述的太阳能电池组件，其中，与所述前电极层相比，所述导线具有更高的电导率和更低的电阻系数。
9.如权利要求1所述的太阳能电池组件，其中，所述导线仅包括Ag、Al或Cu中的一种。
10.如权利要求1所述的太阳能电池组件，其中，所述前电极层的厚度在100nm到500nm的范围内。
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