CN104106146A - 太阳能电池组件及其制造方法 - Google Patents

太阳能电池组件及其制造方法 Download PDF

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CN104106146A
CN104106146A CN201280068421.7A CN201280068421A CN104106146A CN 104106146 A CN104106146 A CN 104106146A CN 201280068421 A CN201280068421 A CN 201280068421A CN 104106146 A CN104106146 A CN 104106146A
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池奭宰
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LG Innotek Co Ltd
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Abstract

本发明公开了一种太阳能电池组件及其制造方法。所述太阳能电池组件包括在支撑基板上的背电极层、在背电极层上的光吸收层、在光吸收层上的第一缓冲层、在所述缓冲层上的第二缓冲层、以及在第二缓冲层上的前电极层。

Description

太阳能电池组件及其制造方法
技术领域
本发明涉及一种太阳能电池组件及其制造方法。
背景技术
太阳能电池可以定义为利用光入射到P-N结二极管上时产生电子的光伏效应将光能转换为电能的装置。根据构成结型二极管的材料，太阳能电池可以分类为硅太阳能电池、主要包含I-III-VI族化合物或者III-V族化合物的化合物半导体太阳能电池、染料敏化太阳能电池、以及有机太阳能电池。
由CIGS(CuInGaSe)(CIGS是I-III-VI族黄铜矿基化合物半导体之一)制成的太阳能电池呈现出优异的光吸收性、厚度薄且较高的光电转换效率、以及优异的光电稳定性，所以CIGS太阳能电池作为传统硅太阳能电池的替代品引起关注。
一般来说，CIGS太阳能电池可以通过在包含钠的基板上依次形成背电极层、光吸收层以及前电极层来制备。在上述层之中，缓冲层设置在晶格系数和能带隙呈现出很大差异的光吸收层和前电极层之间来形成理想的结。根据现有技术，硫化镉(CdS)主要用于缓冲层。然而，存在的缺点是，镉(Cd)具有毒性而且缓冲层通过湿处理来制造，例如化学浴沉积(CBD)。
为了解决上述问题，最近，利用比CdS具有更高带隙的硫化锌(ZnS)作为缓冲层材料的无镉太阳能电池引起关注。然而，用于无镉太阳能电池的ZnS缓冲层抵抗外部冲击弱，因此当在该缓冲层上形成前电极层时，执行金属有机化学气相沉积法(MOCVD)代替溅射法。一般来说，相比溅射过程，很难控制MOCVD过程中的沉积均匀性。
发明内容
技术问题
实施例提供一种太阳能电池组件及其制造方法，所述太阳能电池组件包含对外部损坏具有高抵抗性的缓冲层并且提供提高的光电转换效率的。
技术方案
根据第一实施例，提供一种太阳能电池组件，其包括在支撑基板上的背电极层、在背电极层上的光吸收层、在光吸收层上的第一缓冲层、在缓冲层上并表示为下述化学式2的第二缓冲层、以及在第二缓冲层上的前电极层。
根据第二实施例，提供一种太阳能电池组件，其包括：背电极层，设置在支撑基板上并形成有用于暴露一部分支撑基板的第一通孔；在第一通孔和背电极层上形成的光吸收层；在光吸收层上形成并表示为化学式1的第一缓冲层；第二通孔，穿过光吸收层和第一缓冲层形成以暴露一部分背电极层；在第一缓冲层上形成并表示为化学式2的第二缓冲层；以及在第二缓冲层上形成并填充在第二通孔内的前电极层。
根据实施例，提供一种太阳能电池组件的制造方法，该方法包括在支撑基板上形成背电极层、在背电极层上形成光吸收层、在光吸收层上形成第一缓冲层、在第一缓冲层上形成表示为下述化学式2的第二缓冲层、以及在第二缓冲层上形成前电极层，
[化学式1]
ZnO1-XSX(0<X≤0.4或0.8≤X≤0.9)
[化学式2]
Zn1-YMgYO(0.15≤Y≤0.25)。
有益效果
根据实施例所述的太阳能电池组件，第二缓冲层在第一缓冲层和前电极层之间形成。第二缓冲层可以减少在前电极层形成过程中在第一缓冲层中产生的损坏和针孔，并且防止分流以增大开路电压Voc。
此外，第二缓冲层的能带隙Eg具有在第一缓冲层的能带隙和前电极层的能带隙之间的中间值。就是说，根据实施例，第二缓冲层的带隙与相邻层的带隙是按顺序排列的，因而可以使电子-空穴的重组最小化并且可以提高光电转换效率。
附图说明
图1是剖视图，示出了第一实施例所述的太阳能电池组件；
图2是剖视图，示出了第二实施例所述的太阳能电池组件；以及
图3到图6是剖视图，示出了第二实施例所述的太阳能电池组件的制造方法。
具体实施方式
在实施例的描述中，应该明白，当某一基板、层、膜、或者电极被称作是在另一基板、另一层、另一膜或者另一电极“之上”或者“之下”时，它可以是“直接”或“间接”地在该另一基板、层、膜或电极之上或之下，或者也可以存在一个或更多的中间层。每个部件的这种位置参照附图进行了描述。为了方便或者清楚，附图所示每个部件的厚度和尺寸可以夸大、省略、或者示意性地绘制。此外，元件的尺寸可以不完全反映实际的尺寸。
图1是剖视图，示出了第一实施例所述的太阳能电池组件。
参考图1，第一实施例所述的太阳能电池包括支撑基板100、背电极层200、光吸收层300、第一缓冲层400、第二缓冲层500以及前电极层600。
支撑基板100具有平板形状并且支撑背电极层200、光吸收层300、第一缓冲层400、第二缓冲层500以及前电极层600。
支撑基板100可以是绝缘体。例如，支撑基板100可以是玻璃基板、塑料基板、或者金属基板。更详细地讲，支撑基板100可以是钠钙玻璃基板。支撑基板100可以是透明的。支撑基板100可以是刚性的或可弯曲的。
背电极层200是导电层。背电极层200可以包括钼(Mo)、金(Au)、铝(Al)、铬(Cr)、钨(W)、以及铜(Cu)中至少之一。在上述材料中，Mo具有与支撑基板100相近的热膨胀系数，因而Mo可以提高粘合性并防止背电极层200与支撑基板100层离。就是说，背电极层200所需的特性通过Mo可以全部得到满足。
光吸收层300设置在背电极层200上。光吸收层300包括I-III-VI族化合物。例如，光吸收层300可以具有CIGSS(Cu(In,Ga)(Se,S)2)晶体结构、CISS(Cu(In)(Se,S)2)晶体结构或者CGSS(Cu(Ga)(Se,S)2)晶体结构。此外，光吸收层300可以具有约1eV到约1.8eV范围内的能带隙。
第一缓冲层400设置在光吸收层300上。在实施例所述的太阳能电池中，PN结在作为P型半导体的包含CIGS或者CIGSS化合物的光吸收层300和作为N型半导体的前电极层600之间形成。然而，由于光吸收层300和前电极层600之间的晶格系数和能带隙存在很大差异，具有在所述两层的带隙之间的带隙的缓冲层对于形成理想的结是必要的。同时，第一缓冲层400可以表示为下述化学式1。此外，第一缓冲层400可以具有约10nm到30nm范围内的厚度，但本实施例不限于此。
[化学式1]
ZnO1-XSX(0<X≤0.4或0.8≤X≤0.9)
第二缓冲层500设置在第一缓冲层400上。如上述描述，基于ZnS的缓冲层抵抗外部冲击弱。为了解决这个问题，根据实施例所述的太阳能电池组件，对外部冲击具有高抵抗性的第二缓冲层500设置在第一缓冲层400上，以保护第一缓冲层400免受外部冲击。此外，前电极层600可以通过溅射过程在第一缓冲层400上形成。因此，由于第二缓冲层500存在，所以前电极层600的沉积均匀性可以得到提高。
同时，第二缓冲层500可以表示为下述化学式2。此外，第二缓冲层500可以具有约10nm到30nm范围内的厚度，但本实施例不限于此。
[化学式2]
Zn1-YMgYO(0.15≤Y≤0.25)
前电极层600在第二缓冲层500上形成。前电极层600为透明的导电层。例如，前电极层600可以包括掺B氧化锌(BZO，ZnO：B)、掺Al氧化锌(AZO)或者掺Ga氧化锌(GZO)。更详细地讲，通过考虑带隙和与第一缓冲层400的接触，掺B氧化锌(BZO，ZnO：B)用于前电极层600。
实施例所述的太阳能电池组件中，光吸收层300、第一缓冲层400、第二缓冲层500以及前电极层600可以具有顺序排列的能带隙(Eg)。因此，实施例所述的太阳能电池组件可以使电子-空穴的重组最小化并且可以提高光电转换效率。
根据一个实施例，当光吸收层300具有第一能带隙、第一缓冲层400具有第二能带隙以及第二缓冲层500具有第三能带隙时，第二能带隙高于第一能带隙并低于第三能带隙。例如，第一能带隙在约1.00eV到约1.80eV范围内，第二能带隙在约2.50eV到约3.20eV范围内，以及第三能带隙在约3.40eV到约3.80eV范围内，但本实施例不限于此。
化学式1中所表示的第一缓冲层400中硫(S)的含量X可以进行调整使得第一缓冲层400具有约2.50eV到约3.20eV范围内的上述能带隙(Eg)。例如，硫(S)的含量X可以从约0调整到约0.4或者从约0.8调整到约0.9。如果硫(S)的含量X从约0增加到约0.4，那么第一缓冲层400的能带隙从约3.20eV减少到约2.50eV。此外，如果硫(S)的含量X从约0.8增加到约0.9，那么第一缓冲层400的能带隙从约2.50eV增加到约3.20eV。
[化学式1]
ZnO1-XSX
化学式1中所表示的第二缓冲层500中镁(Mg)的含量Y可以进行调整使得第二缓冲层500具有约3.40eV到约3.80eV范围内的上述能带隙(Eg)。例如，镁(Mg)的含量Y可以从约0.15调整到约0.25。如果镁(Mg)的含量Y从约0.15增加到约0.25，那么第二缓冲层500的能带隙从约3.40eV增加到约3.80eV。
[化学式2]
Zn1-YMgYO
如此，实施例所述的太阳能电池组件提供具有按顺序排列的能带隙的缓冲层400和缓冲层500，因而可以使电子-空穴的重组最小化并且可以提高光电转换效率。
图2是剖视图，示出了第二实施例所述的太阳能电池组件，以及图3到图6是剖视图，示出了实施例所述的太阳能电池组件的制造方法。
参照图2，第二实施例所述的太阳能电池组件包括：背电极层200，设置在支撑基板100上并形成有第一通孔P1用于暴露支撑基板100的一部分；在第一通孔P1和背电极层200上形成的光吸收层300；在光吸收层300上形成并表示为化学式1的第一缓冲层400；第二通孔P2，穿过光吸收层300和第一缓冲层400形成用于暴露背电极层200的一部分；在第一缓冲层400上形成并表示为化学式2的第二缓冲层500；以及在第二缓冲层500上形成并填充在第二通孔P2内的前电极层600。
在下文中，第二实施例所述的太阳能电池组件的制造方法将参照图3到图6进行描述。第一实施例所述的太阳能电池的描述将通过引用结合于此。
参照图3，背电极层200在支撑基板100上形成并且背电极层200被图案化以形成第一通孔P1。第一通孔P1为开口区域用于暴露支撑基板100的顶面。第一通孔P1可以具有约50μm到约100μm范围内的宽度。
因此，多个背电极层在支撑基板100上形成。背电极层200可以通过激光图案化，但本实施例不限于此。
参照图4，光吸收层300、第一缓冲层400以及第二缓冲层500在背电极层200上依次形成。
光吸收层300可以通过溅射过程或者蒸发过程来形成。
例如，光吸收层300可以通过各种方法来形成，例如通过同时或分别蒸发Cu、In、Ga和Se形成基于Cu(In,Ga)Se2(CIGS)的光吸收层300的方法，以及形成了金属前体层之后进行硒化过程的方法。
至于金属前体层形成之后硒化过程的细节，采用Cu靶、In靶和Ga靶通过溅射过程在背电极层200上形成金属前体层。然后，该金属前体层经历硒化过程，从而形成基于Cu(In,Ga)Se2(CIGS)的光吸收层300。
另外，采用Cu靶、In靶和Ga靶的溅射过程与硒化过程可以同时进行。
而且，通过只采用Cu靶和In靶或者只采用Cu靶和Ga靶的溅射过程以及硒化过程可以形成基于CIS或者CIG的光吸收层300。
然后，第一缓冲层400在光吸收层300上形成。如上述描述，第一缓冲层400可以表示为化学式1(ZnO1-XSX(0<X≤0.4或0.8≤X≤0.9))。例如，第一缓冲层400可以通过原子层沉积(ALD)、金属有机化学气相沉积(MOCVD)或者化学浴沉积(CBD)来形成。
之后，第二缓冲层500在第一缓冲层400上形成。如上述描述，第二缓冲层500可以表示为化学式2(Zn1-YMgYO(0.15≤Y≤0.25))。例如，第二缓冲层500可以通过溅射法、MOCVD或CBD来形成。
参照图5，光吸收层300、第一缓冲层400以及第二缓冲层500被部分去除来形成第二通孔P2。多个光吸收部分由第二通孔P2来限定。就是说，光吸收层300被第二通孔P2分成光吸收部分。
第二通孔P2邻近于第一通孔P1。就是说，从顶部看时，第二通孔P2的一部分靠近第一通孔P1而形成。第二通孔P2可以具有约40μm到150μm范围内的宽度，但本实施例不限于此。
参照图6，在第二缓冲层500上沉积透明导电材料以形成前电极层600。当沉积前电极层600时，透明导电材料填充在第二通孔P2内。填充在第二通孔P2内的透明导电材料可以作为连接线来电连接前电极层600与背电极层200。
前电极层600可以包括掺B氧化锌(BZO)、掺Al氧化锌(AZO)或者掺Ga氧化锌(GZO)。更详细地讲，通过考虑带隙和与第一缓冲层400的接触，掺B氧化锌(BZO)用于前电极层600。
前电极层600可以通过溅射或者MOCVD来沉积。更详细地讲，前电极层600可以通过溅射来进行沉积。根据实施例所述的太阳能电池组件的制造方法，对外部冲击具有高抵抗性的掺Mg的第二缓冲层500在抵抗外部冲击弱的第一缓冲层400上形成，因而前电极层600可以通过溅射过程来形成。如此，前电极层600可以均匀地沉积，并且即使当前电极层600在大型基板上沉积时沉积速率可以保持不变。
然后，形成第三通孔P3来划分前电极层600。第三通孔P3穿过前电极层600、第二缓冲层500、第一缓冲层400、以及光吸收层300而形成来暴露一部分背电极层200。就是说，太阳能电池组件可以被第三通孔P3分成多个太阳能电池C1,C2…和Cn。第三通孔P3可以通过机械方法来形成并且可以具有约80μm到约200μm范围内的宽度，但本实施例不限于此。
在本说明书中每提及“一个实施例”，“某个实施例”，“示例性实施例”等时意味着，结合该实施例描述的具体特征、结构、或特性包含在本发明的至少一个实施例中。在本说明书中不同地方出现的此类短语不一定都是指同一实施例。另外，当结合某一实施例描述具体的特征、结构、或特性时，应当认为，结合其它实施例实现该特征、结构或特性落入本领域技术人员的能力范围内。
虽然参照本发明的若干说明性实施例描述了实施例，但应该知道，本领域技术人员可以构思出很多其它的变型和实施例，这些变型和实施例落入本发明原理的精神和范围内。更具体地讲，在本发明公开、附图和所附权利要求书的范围内，可以对主题组合结构的组成部分和/或排列作出各种改变和变型。除了所述组成部分和/或排列的改变和变型之外，其它用途对于本领域技术人员而言也是显然的。

Claims (15)

1.一种太阳能电池组件，包括：
在支撑基板上的背电极层；
在所述背电极层上的光吸收层；
在所述光吸收层上的第一缓冲层；
在所述第一缓冲层上并表示为下述化学式2的第二缓冲层；以及
在所述第二缓冲层上的前电极层，
[化学式2]
Zn1-YMgYO(0.15≤Y≤0.25)。
2.如权利要求1所述的太阳能电池组件，其中，所述第一缓冲层表示为下述化学式1，
[化学式1]
ZnO1-XSX(0<X≤0.4或0.8≤X≤0.9)。
3.如权利要求1所述的太阳能电池组件，其中，所述前电极层包含BZO(ZnO：B)。
4.如权利要求1所述的太阳能电池组件，其中，所述第一缓冲层具有10nm到30nm范围内的厚度，所述第二缓冲层具有10nm到30nm范围内的厚度。
5.如权利要求1所述的太阳能电池组件，其中，当所述光吸收层具有第一能带隙，所述第一缓冲层具有第二能带隙，以及所述第二缓冲层具有第三能带隙时，所述第二能带隙高于所述第一能带隙并低于所述第三能带隙。
6.如权利要求5所述的太阳能电池组件，其中，所述第一能带隙在1.00eV到1.80eV范围内，所述第二能带隙在2.50eV到3.20eV范围内，以及所述第三能带隙在3.40eV到3.80eV范围内。
7.一种太阳能电池组件，包括：
背电极层，设置在支撑基板上并形成有用于暴露一部分所述支撑基板的第一通孔；
在所述第一通孔和所述背电极层上形成的光吸收层；
在所述光吸收层上形成并表示为下述化学式1的第一缓冲层；
第二通孔，穿过所述光吸收层和所述第一缓冲层形成以暴露一部分所述背电极层；
在所述第一缓冲层上形成并表示为下述化学式2的第二缓冲层；以及
在所述第二缓冲层上形成并填充在所述第二通孔内的前电极层，
[化学式1]
ZnO1-XSX(0<X≤0.4或0.8≤X≤0.9)，
[化学式2]
Zn1-YMgYO(0.15≤Y≤0.25)。
8.如权利要求7所述的太阳能电池组件，其中，所述前电极层包含BZO(ZnO：B)。
9.如权利要求7所述的太阳能电池组件，其中，所述第一缓冲层具有10nm到30nm范围内的厚度，所述第二缓冲层具有10nm到30nm范围内的厚度。
10.如权利要求7所述的太阳能电池组件，其中，所述光吸收层具有1.00eV到1.80eV范围内的能带隙，所述第一缓冲层具有2.50eV到3.20eV范围内的能带隙，以及所述第二缓冲层具有3.40eV到3.80eV范围内能带隙。
11.一种太阳能电池组件的制造方法，该方法包括：
在支撑基板上形成背电极层；
在所述背电极层上形成光吸收层；
在所述光吸收层上形成第一缓冲层；
在所述第一缓冲层上形成表示为下述化学式2的第二缓冲层；以及
在所述第二缓冲层上形成前电极层，
[化学式2]
Zn1-YMgYO(0.15≤Y≤0.25)。
12.如权利要求11所述的方法，其中，所述第一缓冲层表示为下述化学式1，
[化学式1]
ZnO1-XSX(0<X≤0.4或0.8≤X≤0.9)。
13.如权利要求11所述的方法，其中，形成所述前电极层包括：
穿过所述第二缓冲层、所述第一缓冲层以及所述光吸收层形成通孔；以及
形成所述前电极层来填充所述通孔。
14.如权利要求11所述的方法，其中，所述第二缓冲层通过溅射过程、金属有机气相沉积过程或者热沉积过程来形成。
15.如权利要求11所述的方法，其中，所述前电极层通过溅射过程来形成。
CN201280068421.7A 2011-11-29 2012-11-26 太阳能电池组件及其制造方法 Pending CN104106146A (zh)

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