CN103975445A - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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CN103975445A
CN103975445A CN201280060931.XA CN201280060931A CN103975445A CN 103975445 A CN103975445 A CN 103975445A CN 201280060931 A CN201280060931 A CN 201280060931A CN 103975445 A CN103975445 A CN 103975445A
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林真宇
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Abstract

根据实施例，提供了一种太阳能电池，包括：背电极层；在所述背电极层上的光吸收层；在所述光吸收层上的缓冲层；以及，在所述缓冲层上的前电极层，其中，所述前电极层包括本征区和具有导电掺杂剂的掺杂区，并且，所述导电掺杂剂的浓度在从所述掺杂区的过度掺杂区的向上和向下方向逐渐降低。

Description

太阳能电池及其制造方法
技术领域
实施例涉及太阳能电池及其制造方法。
背景技术
用于太阳能发电的太阳能电池的制造方法如下。首先，在制备基板后，背电极层形成在基板上，并且通过激光图案化，由此形成多个背电极。
其后，在背电极上依序形成光吸收层、缓冲层和高电阻缓冲层。为了形成光吸收层，诸如下述方案的各种方案已经被广泛使用：通过同时或分别蒸发Cu、In、Ga和Se来形成基于Cu(In,Ga)Se2(CIGS)的光吸收层的方案；以及，在形成金属前体膜后执行硒化工艺的方案。光吸收层的带隙能量在大约1eV至1.8eV的范围内。
然后，通过溅镀工艺来在光吸收层上形成包括硫化镉(CdS)的缓冲层。该缓冲层的带隙能量可以在大约2.2eV至2.4eV的范围内。其后，通过溅镀工艺在缓冲层上形成包括氧化锌(ZnO)的高电阻缓冲层。高电阻缓冲层的带隙能量在大约3.1eV至大约3.3eV的范围内。
其后，可以在光吸收层、缓冲层和高电阻缓冲层中形成凹槽图案。
然后，透明的导电材料被层叠在高电阻缓冲层上，并且被填充在凹槽图案中。因此，在高电阻缓冲层上形成透明电极层，并且在凹槽图案中形成连接导线。构成该透明电极层和连接导线的材料可以包括掺杂铝的氧化锌(AZO)。该透明电极层的带隙能量可以在大约3.1eV至大约3.3eV的范围内。
然后，在透明电极层中形成凹槽图案，使得可以形成多个太阳能电池。该透明电极和高电阻缓冲器分别相当于电池。可以以条形或矩阵的形式来提供该透明电极和高电阻缓冲器。
透明电极和背电极彼此不对齐，使得透明电极通过连接导线电连接到背电极。因此，太阳能电池可以彼此电串联。
如上所述，为了将太阳光转换为电能，已经制造和使用了各种太阳能电池设备。在韩国未审查专利公开No.10-2008-0088744中公开了该太阳能电池设备之一。
同时，在相关技术中，通过经由溅镀工艺在缓冲层上沉积诸如掺杂铝的氧化锌(AZO)的透明导电材料来形成前电极层。该溅镀工艺引起了下述问题：向缓冲层施加等离子体损害，使得分流路径增大。溅镀提出了通过MOCVD或非真空沉积而不是溅镀工艺，在缓冲层上沉积AZO来形成前电极层的方法。然而，使用MOCVD的方法在制造用于MOCVD的铝的前体时有困难。在使用非真空沉积的方法中，在烧结期间铝未均匀地分布，并且，因为局部的凝聚属性而可能使得前电极层的属性变差。
发明内容
技术问题
实施例提供了一种能够表现出改善了性能的太阳能电池。
技术方案
根据实施例，提供了一种太阳能电池，包括：背电极层；在所述背电极层上的光吸收层；在所述光吸收层上的缓冲层；以及，在所述缓冲层上的前电极层，其中，所述前电极层包括本征区和具有导电掺杂剂的掺杂区，并且，所述导电掺杂剂的浓度在从所述掺杂区的过度掺杂区的向上和向下方向逐渐降低。
根据一个实施例，提供了一种制造太阳能电池的方法，包括：在基板上形成背电极层；在所述背电极层上形成光吸收层；在所述光吸收层上形成缓冲层；在所述缓冲层上形成第一透明导电层；在所述第一透明导电层上形成掺杂剂供应层；以及，在所述掺杂剂供应层上形成第二透明导电层。
有益效果
在根据实施例的太阳能电池及其制造方法中，可以形成前电极层，而无需执行溅镀工艺，使得可以减少对缓冲层的影响。即，减少了对基板的等离子体损害，使得可以防止短路，并且可以增大填充因子。因此，可以改善太阳能电池设备的性能。
附图说明
图1是示出根据实施例的太阳能电池的一个截面的截面图；
图2是示出在根据实施例的太阳能电池中包括的前电极层的结构的视图；以及
图3至6是示出根据实施例的制造太阳能电池的方法的截面图。
具体实施方式
在实施例的描述中，可以明白，当基板、层、膜或电极被称为在另一个基板、另一个层、另一个膜或另一个电极“上”或“下”时，它可以“直接地”或“间接地”在该另一个基板、另一个层、另一个膜或另一个电极上，或者也可以存在一个或多个中间层。已经参照附图描述了层的这种位置。
为了解释和清楚的目的，可以夸大层(膜)、区域、图案或结构的大小或厚度。并且可以不完全反映实际大小。
以下，将参照附图对本公开的示例性实施例进行描述。
现在参考图1和图2来详细描述根据实施例的太阳能电池。图1是示出根据实施例的太阳能电池的一个截面的截面图。图2是示出在根据实施例的太阳能电池中包括的前电极层的结构的视图。
参见图1和图2，根据实施例的太阳能电池包括支撑基板100、背电极层200、光吸收层300、缓冲层400和前电极层500。
支撑基板100具有平板形状，并且支撑背电极层200、光吸收层300、缓冲层400和前电极层500。
支撑基板100可以包括绝缘体。支撑基板100可以是玻璃基板、塑料基板或金属基板。同时，支撑基板100可以包括碱石灰玻璃。支撑基板100可以是透明的、柔性的或刚性的。
背电极层200被设置在支撑基板100的上表面上。背电极层200是导电层。例如，用于背电极层200的材料可以包括诸如钼(Mo)的金属。
背电极层200可以包括至少两层。在这种情况下，可以通过使用相同的金属或不同的金属来形成至少两个层。
光吸收层300设置在背电极层200上。光吸收层300可以包括I-III-VI族化合物。例如，光吸收层300可以具有Cu(In,Ga)Se2(CIGS)晶体结构、Cu(In)Se2晶体结构或Cu(Ga)Se2晶体结构。
光吸收层300的带隙能量在大约1eV至1.8eV的范围内。
缓冲层400设置在光吸收层300上。缓冲层400与光吸收层300直接接触。
缓冲层400可以包括硫化镉(CdS)。
前电极层500设置在光吸收层300上。具体地，在缓冲层400上设置了前电极层500。
前电极层500设置在缓冲层400上，并且是透明的。
前电极层500包括本征区和掺杂区520。
本征区510设置在缓冲层400上。本征区510与缓冲层400直接接触。本征区510包括本征氧化锌。本征区510可以具有50nm至70nm的范围内的厚度T。
掺杂区520设置在本征区510上。掺杂区520包括导电掺杂剂。该导电掺杂剂可以包括铝(Al)。
掺杂区520包括过度掺杂区522。过度掺杂区522可以位于掺杂区520的中心部分中。过度掺杂区522是具有高浓度的导电掺杂剂的区域。
同时，参见图2，该导电掺杂剂的浓度在从过度掺杂区522的向上和向下方向上逐渐降低。即，导电掺杂剂的浓度在从过度掺杂区522的中心部分向上和向下方向上逐渐降低。也就是说，导电掺杂剂的浓度可以从过度掺杂区522向本征区510和过度掺杂区522的上表面逐渐降低。例如，当导电掺杂剂是铝时，铝的浓度可以从过度掺杂区522向本征区510和过度掺杂区522的顶表面逐渐降低。前电极层500的厚度可以在大约500nm至大约1.5μm的范围。当前电极层500具有AZO时，可以以大约重量1.5％至大约重量3.5％的量来掺杂铝(Al)。前电极层500是导电层。
以下，参照图3至6来描述根据实施例的太阳能电池制造方法。在下面的说明中，为了清楚和方便说明的目的，将省略与第一实施例中的结构和组件相同或类似的细节。
图3至6是示出根据实施例的太阳能电池制造方法的截面图。
根据实施例的制造太阳能电池的方法可以包括：在支撑基板100上形成背电极层200的步骤；形成光吸收层300的步骤；形成缓冲层400的步骤；形成第一透明导电层551的步骤；形成掺杂剂供应层552的步骤；以及，形成第二透明导电层553的步骤。
首先，参见图3，在支撑基板100上沉积诸如钼(Mo)的金属来形成背电极层200。可以通过具有不同工艺条件的两个工艺来形成背电极层200。
可以在支撑基板100和背电极层200之间插入诸如扩散屏障层的另一层。
接下来，在背电极层200上形成光吸收层300。可以通过溅镀工艺或蒸镀来形成光吸收层300。
例如，同时或单独地蒸发Cu、In、Ga和Se以形成基于CIGS的光吸收层300，或者，可以在形成金属前体层后通过硒化工艺来形成光吸收层300。
具体地，通过执行使用Cu靶、In靶和Ga靶的溅镀工艺来在背电极层200上形成金属前提层。
然后，执行硒化工艺以来形成基于CIGS的光吸收层300。
另外，可以同时执行使用Cu靶、In靶和Ga靶的溅镀工艺和硒化工艺。
而且，可以执行仅使用Cu靶和In靶和仅使用Cu靶和Ga靶的溅镀工艺和硒化工艺来形成基于CIS或CIG的光吸收层300。
接下来，在光吸收层300上形成缓冲层400。可以通过化学浴沉积(CBD)、化学气相沉积(CVD)工艺或喷雾方案或物理气相沉积(PVD)工艺来形成缓冲层400。
其后，参见图4，在缓冲层400上形成第一透明导电层551。第一透明导电层551可以包括氧化锌。可以通过沉积来形成第一透明导电层551。具体地，可以通过有机金属化学气相沉积(MOCVD)工艺来形成第一透明导电层551。因为可以形成第一透明导电层551而不对缓冲层400产生大的影响，所以可以以足够的厚度来形成第一透明导电层551。
接下来，参见图5，可以在第一透明导电层551上形成掺杂剂供应层552。掺杂剂供应层552可以包括铝(Al)。可以通过溅镀或沉积来形成掺杂剂供应层552。
其后，参见图6，可以在掺杂剂供应层552上形成第二透明导电层553。第二透明导电层553可以包括氧化锌。可以通过沉积来形成第二透明导电层553。具体地，可以通过MOCVD工艺来形成第二透明导电层553。详细而言，第二透明导电层553可以通过与形成第一透明导电层551相同方式即通过MOCVD工艺来形成。
接下来，在形成第二透明导电层553后，可以通过热处理来执行扩散第一透明导电层551、掺杂剂供应层552和第二透明导电层的步骤。即，可以通过热处理来扩散掺杂剂供应层552。
可以在小于或等于250℃的温度下执行扩散掺杂剂供应层552的步骤。因此，可以防止PN结被击穿。
散掺杂剂供应层552的步骤可以执行10分钟或更少的时间。因此，可以通过防止掺杂剂供应层552的铝(Al)达到第一透明导电层551的底表面来保护上方的本征区510。
在实施例中，不通过溅镀工艺来形成第一透明导电层551和第二透明导电层553，以减少对缓冲层400的影响。即，减少了基板的等离子体损害，使得可以防止短路，并且可以增大填充因子。因此，可以改善太阳能电池设备的性能。
在相关技术中，通过经由溅镀工艺在缓冲层400上沉积诸如掺杂铝的氧化锌(AZO)的透明导电材料来形成前电极层。溅镀工艺引起问题：向缓冲层400施加等离子体损害，使得分流路径增大。提出了通过MOCVD或非真空沉积而不是溅镀工艺在缓冲层上沉积AZO来形成前电极层的方法。然而，使用MOCVD的方法在制造用于MOCVD的铝的前体时有困难。使用非真空沉积的方法，在烧结期间铝未均匀地分布，并且，因为局部的凝聚属性而可能使得前电极层的属性变差。
在本说明书中对于“一个实施例”、“实施例”、“示例实施例”等的任何引用表示结合实施例描述的特定特征、结构或特性包括在本发明的至少一个实施例中。出现在本说明书中的各个位置的这样的短语不一定全部指的是同一实施例。而且，当结合任何实施例描述特定特征、结构或特性时，所主张的是，将这些特征、结构或特性与其它实施例相结合在本领域技术人员技术范围内。
虽然已经参考多个说明性实施例描述了实施例，但是应当明白，本领域内的技术人员在本公开的精神和原理范围内的可以做出多种其它修改和实施例。更具体地，在本公开、附图和所附的权利要求的范围内的主组合布置的组成零件和/或布置中，可以做出多种改变和修改。除了在组成零件和/或布置中的改变和修改之外，替代使用对于本领域内的技术人员是也显而易见的。

Claims (11)

1.一种太阳能电池，包括：
背电极层；
在所述背电极层上的光吸收层；
在所述光吸收层上的缓冲层；以及，
在所述缓冲层上的前电极层，
其中，所述前电极层包括本征区和具有导电掺杂剂的掺杂区，并且，
所述导电掺杂剂的浓度在从所述掺杂区的过度掺杂区的向上和向下方向逐渐降低。
2.根据权利要求1所述的太阳能电池，其中，所述导电掺杂剂包括铝。
3.根据权利要求1所述的太阳能电池，其中，所述本征区的厚度处于50nm至70nm的范围内。
4.根据权利要求1所述的太阳能电池，其中，所述本征区与所述缓冲层直接接触。
5.根据权利要求1所述的太阳能电池，其中，所述掺杂区设置在在所述本征区上。
6.根据权利要求1所述的太阳能电池设备，其中，所述过度掺杂区位于所述掺杂区的中心部分。
7.一种制造太阳能电池的方法，包括：
在基板上形成背电极层；
在所述背电极层上形成光吸收层；
在所述光吸收层上形成缓冲层；
在所述缓冲层上形成第一透明导电层；
在所述第一透明导电层上形成掺杂剂供应层；以及，
在所述掺杂剂供应层上形成第二透明导电层。
8.根据权利要求7所述的方法，其中，所述第一透明导电层和所述第二透明导电层包括氧化锌。
9.根据权利要求7所述的方法，其中，所述掺杂剂供应层包括铝。
10.根据权利要求7所述的方法，在形成所述第二透明层后进一步扩散所述掺杂剂供应层。
11.根据权利要求10所述的方法，其中，在小于或等于250℃的温度下执行所述掺杂剂供应层的所述扩散。
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