PT1448490E - Substrato transparente munido de um eléctrodo - Google Patents
Substrato transparente munido de um eléctrodo Download PDFInfo
- Publication number
- PT1448490E PT1448490E PT02796880T PT02796880T PT1448490E PT 1448490 E PT1448490 E PT 1448490E PT 02796880 T PT02796880 T PT 02796880T PT 02796880 T PT02796880 T PT 02796880T PT 1448490 E PT1448490 E PT 1448490E
- Authority
- PT
- Portugal
- Prior art keywords
- roughness
- face
- substrate according
- substrate
- glass substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 239000011521 glass Substances 0.000 claims abstract description 66
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 238000000197 pyrolysis Methods 0.000 claims abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000003486 chemical etching Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 5
- 239000011787 zinc oxide Substances 0.000 claims abstract description 4
- 238000005299 abrasion Methods 0.000 claims abstract 2
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract 2
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000004576 sand Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 235000019592 roughness Nutrition 0.000 description 53
- 238000000151 deposition Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- -1 aliphatic isocyanate Chemical class 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000019587 texture Nutrition 0.000 description 3
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 230000029142 excretion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 235000013980 iron oxide Nutrition 0.000 description 1
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/77—Coatings having a rough surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
- Non-Insulated Conductors (AREA)
- Hybrid Cells (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0115353A FR2832706B1 (fr) | 2001-11-28 | 2001-11-28 | Substrat transparent muni d'une electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PT1448490E true PT1448490E (pt) | 2007-11-29 |
Family
ID=8869857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PT02796880T PT1448490E (pt) | 2001-11-28 | 2002-11-27 | Substrato transparente munido de um eléctrodo |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US7923626B2 (enExample) |
| EP (1) | EP1448490B1 (enExample) |
| JP (2) | JP2005515955A (enExample) |
| KR (1) | KR100970428B1 (enExample) |
| CN (1) | CN1596230B (enExample) |
| AT (1) | ATE370921T1 (enExample) |
| BR (1) | BR0214368B1 (enExample) |
| DE (1) | DE60222004T2 (enExample) |
| ES (1) | ES2292846T3 (enExample) |
| FR (1) | FR2832706B1 (enExample) |
| MX (1) | MXPA04005088A (enExample) |
| PT (1) | PT1448490E (enExample) |
| WO (1) | WO2003064344A1 (enExample) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1302988A3 (de) * | 2001-10-12 | 2007-01-24 | Bayer MaterialScience AG | Photovoltaik-Module mit einer thermoplastischen Schmelzklebeschicht sowie ein Verfahren zu ihrer Herstellung |
| JP4195936B2 (ja) * | 2004-03-17 | 2008-12-17 | 独立行政法人産業技術総合研究所 | 拡散性の反射面を持つ反射型調光素子 |
| FR2870007B1 (fr) | 2004-05-10 | 2006-07-14 | Saint Gobain | Feuille transparente texturee a motifs pyramidaux inclines |
| KR100659044B1 (ko) | 2004-07-05 | 2006-12-19 | 전자부품연구원 | 산화아연 박막을 가지는 태양전지 및 그 제조 방법 |
| JP4716701B2 (ja) * | 2004-09-30 | 2011-07-06 | 株式会社エンプラス | 色素増感太陽電池の光電極及び色素増感太陽電池、並びに有機太陽電池の光電極 |
| FR2891269B1 (fr) | 2005-09-23 | 2007-11-09 | Saint Gobain | Substrat transparent muni d'une electrode |
| KR100728194B1 (ko) * | 2005-11-11 | 2007-06-13 | 삼성에스디아이 주식회사 | 염료 감응형 태양 전지 및 이의 제조 방법 |
| US20080105293A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US8012317B2 (en) * | 2006-11-02 | 2011-09-06 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
| US7964788B2 (en) * | 2006-11-02 | 2011-06-21 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080178932A1 (en) * | 2006-11-02 | 2008-07-31 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
| US20080105299A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same |
| US8076571B2 (en) * | 2006-11-02 | 2011-12-13 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080302414A1 (en) * | 2006-11-02 | 2008-12-11 | Den Boer Willem | Front electrode for use in photovoltaic device and method of making same |
| US8203073B2 (en) * | 2006-11-02 | 2012-06-19 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080105298A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US7736750B2 (en) * | 2006-12-14 | 2010-06-15 | Ppg Industries Ohio, Inc. | Coated non-metallic sheet having a brushed metal appearance, and coatings for and method of making same |
| US8334452B2 (en) | 2007-01-08 | 2012-12-18 | Guardian Industries Corp. | Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like |
| US20080169021A1 (en) * | 2007-01-16 | 2008-07-17 | Guardian Industries Corp. | Method of making TCO front electrode for use in photovoltaic device or the like |
| US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
| AU2008233232A1 (en) * | 2007-03-29 | 2008-10-09 | Merck Sharp & Dohme Corp. | Combination therapy for the treatment-of lower urinary tract symptoms |
| US20080308145A1 (en) * | 2007-06-12 | 2008-12-18 | Guardian Industries Corp | Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same |
| US20080308146A1 (en) | 2007-06-14 | 2008-12-18 | Guardian Industries Corp. | Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same |
| US7888594B2 (en) * | 2007-11-20 | 2011-02-15 | Guardian Industries Corp. | Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index |
| FR2924863B1 (fr) * | 2007-12-07 | 2017-06-16 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere. |
| US20090194155A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
| US20090194157A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
| GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
| JP5174900B2 (ja) * | 2008-06-09 | 2013-04-03 | 三菱電機株式会社 | 薄膜光電変換装置およびその製造方法 |
| CN101308882A (zh) * | 2008-07-22 | 2008-11-19 | 东莞宏威数码机械有限公司 | 透明导电氧化物绒面的制备方法 |
| US8022291B2 (en) * | 2008-10-15 | 2011-09-20 | Guardian Industries Corp. | Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device |
| FR2939239B1 (fr) * | 2008-12-03 | 2010-12-31 | Ecole Polytech | Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module |
| JP2010205804A (ja) * | 2009-02-27 | 2010-09-16 | Mitsubishi Heavy Ind Ltd | 光電変換装置 |
| KR101134595B1 (ko) * | 2009-07-29 | 2012-04-09 | 삼성코닝정밀소재 주식회사 | 태양전지 기판, 태양전지 기판 제조 방법 및 태양전지 |
| GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
| FR2950878B1 (fr) | 2009-10-01 | 2011-10-21 | Saint Gobain | Procede de depot de couche mince |
| TWI440193B (zh) * | 2009-10-20 | 2014-06-01 | Ind Tech Res Inst | 太陽能電池裝置 |
| DE102009050234A1 (de) * | 2009-10-21 | 2011-05-05 | Von Ardenne Anlagentechnik Gmbh | Verfahren zur Beschichtung eines Substrats mit einer TCO-Schicht und Dünnschichtsolarzelle |
| US8896077B2 (en) * | 2009-10-23 | 2014-11-25 | The Board Of Trustees Of The Leland Stanford Junior University | Optoelectronic semiconductor device and method of fabrication |
| US20110168252A1 (en) * | 2009-11-05 | 2011-07-14 | Guardian Industries Corp. | Textured coating with etching-blocking layer for thin-film solar cells and/or methods of making the same |
| US8502066B2 (en) * | 2009-11-05 | 2013-08-06 | Guardian Industries Corp. | High haze transparent contact including insertion layer for solar cells, and/or method of making the same |
| US20110186120A1 (en) * | 2009-11-05 | 2011-08-04 | Guardian Industries Corp. | Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same |
| US20110126890A1 (en) * | 2009-11-30 | 2011-06-02 | Nicholas Francis Borrelli | Textured superstrates for photovoltaics |
| TW201123508A (en) * | 2009-12-22 | 2011-07-01 | Univ Nat Chiao Tung | Antireflection layer, method for fabricating antireflection surface, and photovoltaic device applying the same |
| KR101084985B1 (ko) * | 2010-03-15 | 2011-11-21 | 한국철강 주식회사 | 플렉서블 기판을 포함하는 광기전력 장치 및 이의 제조 방법 |
| US8604500B2 (en) * | 2010-03-17 | 2013-12-10 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
| KR101194243B1 (ko) * | 2010-04-20 | 2012-10-29 | 한국철강 주식회사 | 탠덤형 광기전력 장치 및 이의 제조 방법 |
| US9312417B2 (en) * | 2010-10-22 | 2016-04-12 | Guardian Industries Corp. | Photovoltaic modules, and/or methods of making the same |
| WO2012075070A1 (en) * | 2010-11-30 | 2012-06-07 | Corning Incorporated | Display device with light diffusive glass panel |
| US20120152346A1 (en) * | 2010-12-20 | 2012-06-21 | Qualcomm Mems Technologies, Inc. | Light absorption-enhancing substrate stacks |
| EP2523227A1 (en) * | 2011-05-13 | 2012-11-14 | Applied Materials, Inc. | Thin-film solar fabrication process, deposition method for TCO layer, and solar cell precursor layer stack |
| US8628996B2 (en) | 2011-06-15 | 2014-01-14 | International Business Machines Corporation | Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells |
| TWI443846B (zh) * | 2011-11-01 | 2014-07-01 | Ind Tech Res Inst | 透明導電層結構 |
| KR101293647B1 (ko) * | 2012-07-27 | 2013-08-13 | 삼성코닝정밀소재 주식회사 | 투명 전도성 산화물 박막 기판, 그 제조방법, 이를 포함하는 유기전계발광소자 및 광전지 |
| WO2014026109A1 (en) * | 2012-08-09 | 2014-02-13 | The Board Of Trustees Of The Leland Stanford Junior University | Ultra thin film nanostructured solar cell |
| US8889456B2 (en) | 2012-08-29 | 2014-11-18 | International Business Machines Corporation | Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells |
| JP5934073B2 (ja) * | 2012-10-03 | 2016-06-15 | ナショナル サイエンス アンド テクノロジー ディベロップメント エイジェンシーNational Science and Technology Development Agency | 薄膜太陽電池およびその製造方法 |
| JP2016029675A (ja) * | 2012-12-18 | 2016-03-03 | 株式会社カネカ | 薄膜太陽電池用透光性絶縁基板、及び集積型薄膜シリコン太陽電池 |
| CN103508679B (zh) * | 2013-06-04 | 2016-06-15 | 漳州旗滨玻璃有限公司 | 一种透明导电氧化膜玻璃生产方法及镀膜装置 |
| JP6037967B2 (ja) * | 2013-07-31 | 2016-12-07 | 京セラドキュメントソリューションズ株式会社 | 画像形成装置 |
| JP6803018B2 (ja) * | 2019-03-05 | 2020-12-23 | 株式会社Nsc | ガラス用エッチング液およびガラス基板製造方法 |
| JP7728082B2 (ja) | 2020-12-23 | 2025-08-22 | Tpr株式会社 | CrN被膜、及び摺動部材 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4419533A (en) * | 1982-03-03 | 1983-12-06 | Energy Conversion Devices, Inc. | Photovoltaic device having incident radiation directing means for total internal reflection |
| US4514582A (en) * | 1982-09-17 | 1985-04-30 | Exxon Research And Engineering Co. | Optical absorption enhancement in amorphous silicon deposited on rough substrate |
| GB2188924B (en) * | 1986-04-08 | 1990-05-09 | Glaverbel | Matted glass, process of producing matted glass, photo-voltaic cell incorporating a glass sheet, and process of manufacturing such a cell |
| US4808462A (en) * | 1987-05-22 | 1989-02-28 | Glasstech Solar, Inc. | Solar cell substrate |
| JPH05198830A (ja) * | 1992-06-12 | 1993-08-06 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JP2504378B2 (ja) * | 1993-10-22 | 1996-06-05 | 株式会社日立製作所 | 太陽電池基板の製造方法 |
| DE69434943T2 (de) * | 1993-11-05 | 2007-12-06 | Citizen Holdings Co., Ltd., Nishitokyo | Solarzellenanordnung und herstellungsverfahren |
| DE19514908C1 (de) | 1995-04-22 | 1996-04-18 | Ver Glaswerke Gmbh | Verfahren zur Herstellung eines Solarmoduls |
| JPH1168131A (ja) * | 1997-08-25 | 1999-03-09 | Citizen Watch Co Ltd | 太陽電池の製造方法 |
| AUPP699798A0 (en) * | 1998-11-06 | 1998-12-03 | Pacific Solar Pty Limited | Thin films with light trapping |
| JP4017281B2 (ja) * | 1999-03-23 | 2007-12-05 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
| JP4397451B2 (ja) * | 1999-03-30 | 2010-01-13 | Hoya株式会社 | 透明導電性薄膜及びその製造方法 |
| JP2001060708A (ja) * | 1999-06-18 | 2001-03-06 | Nippon Sheet Glass Co Ltd | 透明積層体およびこれを用いたガラス物品 |
| US6787692B2 (en) * | 2000-10-31 | 2004-09-07 | National Institute Of Advanced Industrial Science & Technology | Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell |
-
2001
- 2001-11-28 FR FR0115353A patent/FR2832706B1/fr not_active Expired - Fee Related
-
2002
- 2002-11-27 MX MXPA04005088A patent/MXPA04005088A/es active IP Right Grant
- 2002-11-27 DE DE60222004T patent/DE60222004T2/de not_active Expired - Lifetime
- 2002-11-27 JP JP2003563972A patent/JP2005515955A/ja active Pending
- 2002-11-27 WO PCT/FR2002/004059 patent/WO2003064344A1/fr not_active Ceased
- 2002-11-27 CN CN028238095A patent/CN1596230B/zh not_active Expired - Fee Related
- 2002-11-27 BR BRPI0214368-2A patent/BR0214368B1/pt not_active IP Right Cessation
- 2002-11-27 US US10/495,438 patent/US7923626B2/en not_active Expired - Fee Related
- 2002-11-27 PT PT02796880T patent/PT1448490E/pt unknown
- 2002-11-27 EP EP02796880A patent/EP1448490B1/fr not_active Expired - Lifetime
- 2002-11-27 KR KR1020047007875A patent/KR100970428B1/ko not_active Expired - Fee Related
- 2002-11-27 AT AT02796880T patent/ATE370921T1/de active
- 2002-11-27 ES ES02796880T patent/ES2292846T3/es not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| EP1448490B1 (fr) | 2007-08-22 |
| DE60222004T2 (de) | 2008-05-15 |
| CN1596230A (zh) | 2005-03-16 |
| BR0214368B1 (pt) | 2011-08-09 |
| FR2832706B1 (fr) | 2004-07-23 |
| DE60222004D1 (de) | 2007-10-04 |
| ES2292846T3 (es) | 2008-03-16 |
| JP2013136510A (ja) | 2013-07-11 |
| US20050016583A1 (en) | 2005-01-27 |
| CN1596230B (zh) | 2012-04-04 |
| MXPA04005088A (es) | 2004-08-19 |
| KR100970428B1 (ko) | 2010-07-15 |
| FR2832706A1 (fr) | 2003-05-30 |
| KR20040064285A (ko) | 2004-07-16 |
| BR0214368A (pt) | 2004-11-30 |
| ATE370921T1 (de) | 2007-09-15 |
| JP2005515955A (ja) | 2005-06-02 |
| EP1448490A1 (fr) | 2004-08-25 |
| US7923626B2 (en) | 2011-04-12 |
| WO2003064344A1 (fr) | 2003-08-07 |
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