JP2005515955A - 電極を備えた透明基材 - Google Patents

電極を備えた透明基材 Download PDF

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Publication number
JP2005515955A
JP2005515955A JP2003563972A JP2003563972A JP2005515955A JP 2005515955 A JP2005515955 A JP 2005515955A JP 2003563972 A JP2003563972 A JP 2003563972A JP 2003563972 A JP2003563972 A JP 2003563972A JP 2005515955 A JP2005515955 A JP 2005515955A
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JP
Japan
Prior art keywords
roughness
substrate
conductive layer
substrate according
glass substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003563972A
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English (en)
Japanese (ja)
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JP2005515955A5 (enExample
Inventor
ブリースケ，ウルフ
アンヌ デュランドー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
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Saint Gobain Glass France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS filed Critical Saint Gobain Glass France SAS
Publication of JP2005515955A publication Critical patent/JP2005515955A/ja
Publication of JP2005515955A5 publication Critical patent/JP2005515955A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/70—Properties of coatings
    • C03C2217/77—Coatings having a rough surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
  • Non-Insulated Conductors (AREA)
  • Hybrid Cells (AREA)
  • Liquid Crystal (AREA)
JP2003563972A 2001-11-28 2002-11-27 電極を備えた透明基材 Pending JP2005515955A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0115353A FR2832706B1 (fr) 2001-11-28 2001-11-28 Substrat transparent muni d'une electrode
PCT/FR2002/004059 WO2003064344A1 (fr) 2001-11-28 2002-11-27 Substrat transparent muni d'une electrode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013011566A Division JP2013136510A (ja) 2001-11-28 2013-01-24 電極を備えた透明基材

Publications (2)

Publication Number Publication Date
JP2005515955A true JP2005515955A (ja) 2005-06-02
JP2005515955A5 JP2005515955A5 (enExample) 2006-01-05

Family

ID=8869857

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003563972A Pending JP2005515955A (ja) 2001-11-28 2002-11-27 電極を備えた透明基材
JP2013011566A Pending JP2013136510A (ja) 2001-11-28 2013-01-24 電極を備えた透明基材

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013011566A Pending JP2013136510A (ja) 2001-11-28 2013-01-24 電極を備えた透明基材

Country Status (13)

Country Link
US (1) US7923626B2 (enExample)
EP (1) EP1448490B1 (enExample)
JP (2) JP2005515955A (enExample)
KR (1) KR100970428B1 (enExample)
CN (1) CN1596230B (enExample)
AT (1) ATE370921T1 (enExample)
BR (1) BR0214368B1 (enExample)
DE (1) DE60222004T2 (enExample)
ES (1) ES2292846T3 (enExample)
FR (1) FR2832706B1 (enExample)
MX (1) MXPA04005088A (enExample)
PT (1) PT1448490E (enExample)
WO (1) WO2003064344A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010513066A (ja) * 2006-12-14 2010-04-30 ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド ブラッシュド金属の外観を有する被覆済み非金属シート、及び該シートのためのコーティング、及びそれらの製造方法
JP2014075416A (ja) * 2012-10-03 2014-04-24 Tokyo Institute Of Technology 薄膜太陽電池およびその製造方法
WO2014098146A1 (ja) * 2012-12-18 2014-06-26 株式会社カネカ 薄膜太陽電池用透光性絶縁基板、および薄膜太陽電池
WO2020179312A1 (ja) * 2019-03-05 2020-09-10 株式会社Ｎｓｃ ガラス用エッチング液およびガラス基板製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1302988A3 (de) * 2001-10-12 2007-01-24 Bayer MaterialScience AG Photovoltaik-Module mit einer thermoplastischen Schmelzklebeschicht sowie ein Verfahren zu ihrer Herstellung
JP4195936B2 (ja) * 2004-03-17 2008-12-17 独立行政法人産業技術総合研究所 拡散性の反射面を持つ反射型調光素子
FR2870007B1 (fr) 2004-05-10 2006-07-14 Saint Gobain Feuille transparente texturee a motifs pyramidaux inclines
KR100659044B1 (ko) 2004-07-05 2006-12-19 전자부품연구원 산화아연 박막을 가지는 태양전지 및 그 제조 방법
JP4716701B2 (ja) * 2004-09-30 2011-07-06 株式会社エンプラス 色素増感太陽電池の光電極及び色素増感太陽電池、並びに有機太陽電池の光電極
FR2891269B1 (fr) 2005-09-23 2007-11-09 Saint Gobain Substrat transparent muni d'une electrode
KR100728194B1 (ko) * 2005-11-11 2007-06-13 삼성에스디아이 주식회사 염료 감응형 태양 전지 및 이의 제조 방법
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105299A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105298A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
AU2008233232A1 (en) * 2007-03-29 2008-10-09 Merck Sharp & Dohme Corp. Combination therapy for the treatment-of lower urinary tract symptoms
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
FR2924863B1 (fr) * 2007-12-07 2017-06-16 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere.
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
JP5174900B2 (ja) * 2008-06-09 2013-04-03 三菱電機株式会社 薄膜光電変換装置およびその製造方法
CN101308882A (zh) * 2008-07-22 2008-11-19 东莞宏威数码机械有限公司 透明导电氧化物绒面的制备方法
US8022291B2 (en) * 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
FR2939239B1 (fr) * 2008-12-03 2010-12-31 Ecole Polytech Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module
JP2010205804A (ja) * 2009-02-27 2010-09-16 Mitsubishi Heavy Ind Ltd 光電変換装置
KR101134595B1 (ko) * 2009-07-29 2012-04-09 삼성코닝정밀소재 주식회사 태양전지 기판, 태양전지 기판 제조 방법 및 태양전지
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
FR2950878B1 (fr) 2009-10-01 2011-10-21 Saint Gobain Procede de depot de couche mince
TWI440193B (zh) * 2009-10-20 2014-06-01 Ind Tech Res Inst 太陽能電池裝置
DE102009050234A1 (de) * 2009-10-21 2011-05-05 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer TCO-Schicht und Dünnschichtsolarzelle
US8896077B2 (en) * 2009-10-23 2014-11-25 The Board Of Trustees Of The Leland Stanford Junior University Optoelectronic semiconductor device and method of fabrication
US20110168252A1 (en) * 2009-11-05 2011-07-14 Guardian Industries Corp. Textured coating with etching-blocking layer for thin-film solar cells and/or methods of making the same
US8502066B2 (en) * 2009-11-05 2013-08-06 Guardian Industries Corp. High haze transparent contact including insertion layer for solar cells, and/or method of making the same
US20110186120A1 (en) * 2009-11-05 2011-08-04 Guardian Industries Corp. Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same
US20110126890A1 (en) * 2009-11-30 2011-06-02 Nicholas Francis Borrelli Textured superstrates for photovoltaics
TW201123508A (en) * 2009-12-22 2011-07-01 Univ Nat Chiao Tung Antireflection layer, method for fabricating antireflection surface, and photovoltaic device applying the same
KR101084985B1 (ko) * 2010-03-15 2011-11-21 한국철강 주식회사 플렉서블 기판을 포함하는 광기전력 장치 및 이의 제조 방법
US8604500B2 (en) * 2010-03-17 2013-12-10 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
KR101194243B1 (ko) * 2010-04-20 2012-10-29 한국철강 주식회사 탠덤형 광기전력 장치 및 이의 제조 방법
US9312417B2 (en) * 2010-10-22 2016-04-12 Guardian Industries Corp. Photovoltaic modules, and/or methods of making the same
WO2012075070A1 (en) * 2010-11-30 2012-06-07 Corning Incorporated Display device with light diffusive glass panel
US20120152346A1 (en) * 2010-12-20 2012-06-21 Qualcomm Mems Technologies, Inc. Light absorption-enhancing substrate stacks
EP2523227A1 (en) * 2011-05-13 2012-11-14 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for TCO layer, and solar cell precursor layer stack
US8628996B2 (en) 2011-06-15 2014-01-14 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
TWI443846B (zh) * 2011-11-01 2014-07-01 Ind Tech Res Inst 透明導電層結構
KR101293647B1 (ko) * 2012-07-27 2013-08-13 삼성코닝정밀소재 주식회사 투명 전도성 산화물 박막 기판, 그 제조방법, 이를 포함하는 유기전계발광소자 및 광전지
WO2014026109A1 (en) * 2012-08-09 2014-02-13 The Board Of Trustees Of The Leland Stanford Junior University Ultra thin film nanostructured solar cell
US8889456B2 (en) 2012-08-29 2014-11-18 International Business Machines Corporation Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells
CN103508679B (zh) * 2013-06-04 2016-06-15 漳州旗滨玻璃有限公司 一种透明导电氧化膜玻璃生产方法及镀膜装置
JP6037967B2 (ja) * 2013-07-31 2016-12-07 京セラドキュメントソリューションズ株式会社 画像形成装置
JP7728082B2 (ja) 2020-12-23 2025-08-22 Ｔｐｒ株式会社 ＣｒＮ被膜、及び摺動部材

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63313874A (ja) * 1987-05-22 1988-12-21 旭硝子株式会社 太陽電池用基板
JPH01117372A (ja) * 1986-04-08 1989-05-10 Glaverbel Sa 艶消しガラス、艶消しガラスの製造法、ガラスシ−トを組入れた光電池、およびかかる電池の製造法
JPH05198830A (ja) * 1992-06-12 1993-08-06 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH07122764A (ja) * 1993-10-22 1995-05-12 Hitachi Ltd 太陽電池基板の製造方法
JPH1168131A (ja) * 1997-08-25 1999-03-09 Citizen Watch Co Ltd 太陽電池の製造方法
JP2000277763A (ja) * 1999-03-23 2000-10-06 Sanyo Electric Co Ltd 太陽電池及びその製造方法
JP2000285737A (ja) * 1999-03-30 2000-10-13 Hoya Corp 透明導電性薄膜及びその製造方法
JP2001060708A (ja) * 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 透明積層体およびこれを用いたガラス物品

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
DE69434943T2 (de) * 1993-11-05 2007-12-06 Citizen Holdings Co., Ltd., Nishitokyo Solarzellenanordnung und herstellungsverfahren
DE19514908C1 (de) 1995-04-22 1996-04-18 Ver Glaswerke Gmbh Verfahren zur Herstellung eines Solarmoduls
AUPP699798A0 (en) * 1998-11-06 1998-12-03 Pacific Solar Pty Limited Thin films with light trapping
US6787692B2 (en) * 2000-10-31 2004-09-07 National Institute Of Advanced Industrial Science & Technology Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117372A (ja) * 1986-04-08 1989-05-10 Glaverbel Sa 艶消しガラス、艶消しガラスの製造法、ガラスシ−トを組入れた光電池、およびかかる電池の製造法
JPS63313874A (ja) * 1987-05-22 1988-12-21 旭硝子株式会社 太陽電池用基板
JPH05198830A (ja) * 1992-06-12 1993-08-06 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH07122764A (ja) * 1993-10-22 1995-05-12 Hitachi Ltd 太陽電池基板の製造方法
JPH1168131A (ja) * 1997-08-25 1999-03-09 Citizen Watch Co Ltd 太陽電池の製造方法
JP2000277763A (ja) * 1999-03-23 2000-10-06 Sanyo Electric Co Ltd 太陽電池及びその製造方法
JP2000285737A (ja) * 1999-03-30 2000-10-13 Hoya Corp 透明導電性薄膜及びその製造方法
JP2001060708A (ja) * 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 透明積層体およびこれを用いたガラス物品

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010513066A (ja) * 2006-12-14 2010-04-30 ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド ブラッシュド金属の外観を有する被覆済み非金属シート、及び該シートのためのコーティング、及びそれらの製造方法
JP2014075416A (ja) * 2012-10-03 2014-04-24 Tokyo Institute Of Technology 薄膜太陽電池およびその製造方法
WO2014098146A1 (ja) * 2012-12-18 2014-06-26 株式会社カネカ 薄膜太陽電池用透光性絶縁基板、および薄膜太陽電池
WO2020179312A1 (ja) * 2019-03-05 2020-09-10 株式会社Ｎｓｃ ガラス用エッチング液およびガラス基板製造方法
JP2020142941A (ja) * 2019-03-05 2020-09-10 パナソニック株式会社 ガラス用エッチング液およびガラス基板製造方法

Also Published As

Publication number Publication date
EP1448490B1 (fr) 2007-08-22
DE60222004T2 (de) 2008-05-15
CN1596230A (zh) 2005-03-16
BR0214368B1 (pt) 2011-08-09
FR2832706B1 (fr) 2004-07-23
PT1448490E (pt) 2007-11-29
DE60222004D1 (de) 2007-10-04
ES2292846T3 (es) 2008-03-16
JP2013136510A (ja) 2013-07-11
US20050016583A1 (en) 2005-01-27
CN1596230B (zh) 2012-04-04
MXPA04005088A (es) 2004-08-19
KR100970428B1 (ko) 2010-07-15
FR2832706A1 (fr) 2003-05-30
KR20040064285A (ko) 2004-07-16
BR0214368A (pt) 2004-11-30
ATE370921T1 (de) 2007-09-15
EP1448490A1 (fr) 2004-08-25
US7923626B2 (en) 2011-04-12
WO2003064344A1 (fr) 2003-08-07

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