NO333347B1 - Oppskummet polykrystallinsk silisium, knust produkt derav og fremgangsmate for fremstilling derav - Google Patents
Oppskummet polykrystallinsk silisium, knust produkt derav og fremgangsmate for fremstilling derav Download PDFInfo
- Publication number
- NO333347B1 NO333347B1 NO20020117A NO20020117A NO333347B1 NO 333347 B1 NO333347 B1 NO 333347B1 NO 20020117 A NO20020117 A NO 20020117A NO 20020117 A NO20020117 A NO 20020117A NO 333347 B1 NO333347 B1 NO 333347B1
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- polycrystalline silicon
- hydrogen
- cylindrical vessel
- chlorosilane
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000008569 process Effects 0.000 title description 8
- 238000002360 preparation method Methods 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 171
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 171
- 239000010703 silicon Substances 0.000 claims abstract description 171
- 239000005046 Chlorosilane Substances 0.000 claims abstract description 54
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 238000002844 melting Methods 0.000 claims abstract description 21
- 230000008018 melting Effects 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 62
- 229910052739 hydrogen Inorganic materials 0.000 claims description 56
- 239000001257 hydrogen Substances 0.000 claims description 56
- 238000001816 cooling Methods 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000005054 agglomeration Methods 0.000 claims description 2
- 230000002776 aggregation Effects 0.000 claims description 2
- 239000012530 fluid Substances 0.000 abstract description 2
- 150000003376 silicon Chemical class 0.000 abstract description 2
- HICCMIMHFYBSJX-UHFFFAOYSA-N [SiH4].[Cl] Chemical compound [SiH4].[Cl] HICCMIMHFYBSJX-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 55
- 239000007789 gas Substances 0.000 description 48
- 238000007789 sealing Methods 0.000 description 27
- 239000000463 material Substances 0.000 description 25
- 239000007787 solid Substances 0.000 description 25
- 239000002826 coolant Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 12
- 239000002994 raw material Substances 0.000 description 10
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 8
- 239000005052 trichlorosilane Substances 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000006698 induction Effects 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000005049 silicon tetrachloride Substances 0.000 description 4
- 239000002912 waste gas Substances 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- -1 is used Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/24—Stationary reactors without moving elements inside
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J10/00—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor
- B01J10/005—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor carried out at high temperatures in the presence of a molten material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/0009—Coils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/00094—Jackets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000139023 | 2000-05-11 | ||
| PCT/JP2001/003865 WO2001085613A1 (fr) | 2000-05-11 | 2001-05-09 | Silicium polycristallin et procede et appareil de production correspondants |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20020117D0 NO20020117D0 (no) | 2002-01-10 |
| NO20020117L NO20020117L (no) | 2002-03-06 |
| NO333347B1 true NO333347B1 (no) | 2013-05-13 |
Family
ID=18646543
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20020117A NO333347B1 (no) | 2000-05-11 | 2002-01-10 | Oppskummet polykrystallinsk silisium, knust produkt derav og fremgangsmate for fremstilling derav |
| NO20120619A NO20120619L (no) | 2000-05-11 | 2012-05-25 | Polykrastallinsk silisium, anordning for fremstilling derav |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20120619A NO20120619L (no) | 2000-05-11 | 2012-05-25 | Polykrastallinsk silisium, anordning for fremstilling derav |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6861144B2 (ko) |
| EP (2) | EP1285880B1 (ko) |
| KR (1) | KR100692444B1 (ko) |
| CN (2) | CN1224574C (ko) |
| AU (1) | AU770276C (ko) |
| CA (1) | CA2377892C (ko) |
| DE (2) | DE60142808D1 (ko) |
| ES (2) | ES2274884T3 (ko) |
| NO (2) | NO333347B1 (ko) |
| WO (1) | WO2001085613A1 (ko) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003106338A1 (ja) * | 2002-06-18 | 2003-12-24 | 株式会社トクヤマ | シリコン製造用反応装置 |
| NO20033207D0 (no) * | 2002-07-31 | 2003-07-15 | Per Kristian Egeberg | Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium |
| CA2535537C (en) * | 2003-08-13 | 2009-10-13 | Tokuyama Corporation | Tubular reaction vessel and silicon production process using the same |
| CA2517764C (en) * | 2003-08-22 | 2009-10-13 | Tokuyama Corporation | Silicon production apparatus |
| JP4804348B2 (ja) * | 2004-05-21 | 2011-11-02 | 株式会社トクヤマ | 溶融シリコンの冷却塊状物およびその製造方法 |
| JP4545505B2 (ja) * | 2004-07-22 | 2010-09-15 | 株式会社トクヤマ | シリコンの製造方法 |
| CA2576665C (en) * | 2004-08-11 | 2012-06-26 | Tokuyama Corporation | Silicon manufacturing apparatus |
| US7727483B2 (en) * | 2004-08-19 | 2010-06-01 | Tokuyama Corporation | Reactor for chlorosilane compound |
| WO2006019110A1 (ja) * | 2004-08-19 | 2006-02-23 | Tokuyama Corporation | クロロシラン類の反応装置 |
| EP1820777A4 (en) * | 2004-11-30 | 2010-01-20 | Noritake Tcf Co Ltd | METHOD FOR PRODUCING A POLYCRYSTALLINE SILICON STAIN |
| JP4276627B2 (ja) | 2005-01-12 | 2009-06-10 | ソルボサーマル結晶成長技術研究組合 | 単結晶育成用圧力容器およびその製造方法 |
| DE102006050901A1 (de) * | 2005-11-17 | 2007-05-31 | Solarworld Industries Deutschland Gmbh | Verfahren zum Herstellen eines Halbleiterkörpers und zum Herstellen einer Halbleitervorrichtung |
| US9683286B2 (en) | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
| KR100768147B1 (ko) * | 2006-05-11 | 2007-10-18 | 한국화학연구원 | 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치 |
| KR100783667B1 (ko) * | 2006-08-10 | 2007-12-07 | 한국화학연구원 | 입자형 다결정 실리콘의 제조방법 및 제조장치 |
| JP5205910B2 (ja) * | 2006-10-31 | 2013-06-05 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
| BRPI0718811B1 (pt) | 2006-11-15 | 2020-05-19 | Basf Se | dispositivo elétrico de capacitância de camada dupla |
| CN101707871B (zh) * | 2007-04-25 | 2013-06-12 | 卡甘·塞兰 | 通过大表面积气-固或气-液界面及液相再生沉积高纯硅 |
| DE102007035757A1 (de) * | 2007-07-27 | 2009-01-29 | Joint Solar Silicon Gmbh & Co. Kg | Verfahren und Reaktor zur Herstellung von Silizium |
| US20100290960A1 (en) * | 2007-12-28 | 2010-11-18 | Hiroo Noumi | Apparatus for producing silicon |
| DE102008000052A1 (de) * | 2008-01-14 | 2009-07-16 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
| CN101565852B (zh) * | 2008-04-25 | 2011-10-12 | 比亚迪股份有限公司 | 晶体连续生产设备及使用该设备连续生产多晶硅的方法 |
| US8844513B2 (en) * | 2008-07-07 | 2014-09-30 | John Stock LaMunyon, III | Apparatus, system and method for heating a ventilation system |
| DE102008036143A1 (de) | 2008-08-01 | 2010-02-04 | Berlinsolar Gmbh | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
| JP5334490B2 (ja) * | 2008-08-06 | 2013-11-06 | 株式会社トクヤマ | シリコン製造装置 |
| CN103787336B (zh) | 2008-09-16 | 2016-09-14 | 储晞 | 生产高纯颗粒硅的方法 |
| KR101527516B1 (ko) * | 2008-12-16 | 2015-06-09 | 삼성전자주식회사 | 실리콘 성장방법 및 이를 이용한 태양전지 제조방법 |
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-
2001
- 2001-05-09 CN CNB018012205A patent/CN1224574C/zh not_active Expired - Lifetime
- 2001-05-09 WO PCT/JP2001/003865 patent/WO2001085613A1/ja active IP Right Grant
- 2001-05-09 ES ES01929998T patent/ES2274884T3/es not_active Expired - Lifetime
- 2001-05-09 AU AU56670/01A patent/AU770276C/en not_active Ceased
- 2001-05-09 DE DE60142808T patent/DE60142808D1/de not_active Expired - Lifetime
- 2001-05-09 EP EP01929998A patent/EP1285880B1/en not_active Expired - Lifetime
- 2001-05-09 ES ES06016763T patent/ES2350591T3/es not_active Expired - Lifetime
- 2001-05-09 EP EP06016763A patent/EP1719736B1/en not_active Expired - Lifetime
- 2001-05-09 CN CNB2005100786000A patent/CN100406378C/zh not_active Expired - Lifetime
- 2001-05-09 US US10/030,657 patent/US6861144B2/en not_active Expired - Lifetime
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- 2001-05-09 CA CA002377892A patent/CA2377892C/en not_active Expired - Lifetime
- 2001-05-09 DE DE60124246T patent/DE60124246T2/de not_active Expired - Lifetime
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- 2002-01-10 NO NO20020117A patent/NO333347B1/no not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| AU770276B2 (en) | 2004-02-19 |
| EP1719736A1 (en) | 2006-11-08 |
| CN1699161A (zh) | 2005-11-23 |
| EP1285880B1 (en) | 2006-11-02 |
| DE60142808D1 (de) | 2010-09-23 |
| CA2377892C (en) | 2009-02-03 |
| DE60124246D1 (de) | 2006-12-14 |
| US6861144B2 (en) | 2005-03-01 |
| NO20120619L (no) | 2002-03-06 |
| EP1719736B1 (en) | 2010-08-11 |
| CN1372530A (zh) | 2002-10-02 |
| EP1285880A1 (en) | 2003-02-26 |
| AU770276C (en) | 2004-09-23 |
| NO20020117D0 (no) | 2002-01-10 |
| ES2350591T3 (es) | 2011-01-25 |
| KR100692444B1 (ko) | 2007-03-09 |
| NO20020117L (no) | 2002-03-06 |
| ES2274884T3 (es) | 2007-06-01 |
| CN100406378C (zh) | 2008-07-30 |
| KR20020026526A (ko) | 2002-04-10 |
| EP1285880A4 (en) | 2004-05-26 |
| CN1224574C (zh) | 2005-10-26 |
| CA2377892A1 (en) | 2001-11-15 |
| WO2001085613A1 (fr) | 2001-11-15 |
| AU5667001A (en) | 2001-11-20 |
| DE60124246T2 (de) | 2007-05-31 |
| US20020104474A1 (en) | 2002-08-08 |
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