NO309500B1 - Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme - Google Patents
Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme Download PDFInfo
- Publication number
- NO309500B1 NO309500B1 NO973782A NO973782A NO309500B1 NO 309500 B1 NO309500 B1 NO 309500B1 NO 973782 A NO973782 A NO 973782A NO 973782 A NO973782 A NO 973782A NO 309500 B1 NO309500 B1 NO 309500B1
- Authority
- NO
- Norway
- Prior art keywords
- ferroelectric
- electrode
- data processing
- processing device
- electrodes
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 33
- 230000010287 polarization Effects 0.000 claims abstract description 95
- 239000000463 material Substances 0.000 claims abstract description 52
- 230000015654 memory Effects 0.000 claims abstract description 50
- 239000010409 thin film Substances 0.000 claims abstract description 48
- 239000011159 matrix material Substances 0.000 claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 230000005684 electric field Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 24
- 229920001577 copolymer Polymers 0.000 claims description 19
- 238000012795 verification Methods 0.000 claims description 19
- 238000013500 data storage Methods 0.000 claims description 15
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical group FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000012777 electrically insulating material Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000005070 sampling Methods 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 8
- 230000001419 dependent effect Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 32
- 239000003990 capacitor Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 230000001052 transient effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- -1 poly(vinylidene fluoride) Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
- Surgical Instruments (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Credit Cards Or The Like (AREA)
- Logic Circuits (AREA)
Priority Applications (15)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO973782A NO309500B1 (no) | 1997-08-15 | 1997-08-15 | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
| US09/463,982 US6670659B1 (en) | 1997-08-15 | 1998-08-13 | Ferroelectric data processing device |
| KR10-2000-7001557A KR100368817B1 (ko) | 1997-08-15 | 1998-08-13 | 강유전 데이터 처리장치 |
| DE69824293T DE69824293T2 (de) | 1997-08-15 | 1998-08-13 | Ferroelektrische datenverarbeitungsanordnung |
| RU2000106441/09A RU2184400C2 (ru) | 1997-08-15 | 1998-08-13 | Сегнетоэлектрическое устройство обработки данных |
| EP98939830A EP1002319B1 (en) | 1997-08-15 | 1998-08-13 | A ferroelectric data processing device |
| AU88204/98A AU734881B2 (en) | 1997-08-15 | 1998-08-13 | A ferroelectric data processing device |
| CA002301283A CA2301283C (en) | 1997-08-15 | 1998-08-13 | A ferroelectric data processing device |
| AT98939830T ATE268498T1 (de) | 1997-08-15 | 1998-08-13 | Ferroelektrische datenverarbeitungsanordnung |
| PCT/NO1998/000237 WO1999012170A2 (en) | 1997-08-15 | 1998-08-13 | A ferroelectric data processing device |
| ES98939830T ES2222600T3 (es) | 1997-08-15 | 1998-08-13 | Dispositivo ferroelectrico de tratamiento de datos. |
| CNB988102595A CN1278336C (zh) | 1997-08-15 | 1998-08-13 | 一种铁电体数据处理器件 |
| JP2000509089A JP3359331B2 (ja) | 1997-08-15 | 1998-08-13 | 強誘電体データ処理装置、その製造方法、その使用方法、並びにこの装置の論理素子のアドレス指定における読み取り方法 |
| HK01103620A HK1033028A1 (en) | 1997-08-15 | 2001-05-24 | A ferroelectric data processing device |
| US09/978,034 US6498744B2 (en) | 1997-08-15 | 2001-10-17 | Ferroelectric data processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO973782A NO309500B1 (no) | 1997-08-15 | 1997-08-15 | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO973782D0 NO973782D0 (no) | 1997-08-15 |
| NO973782L NO973782L (no) | 1999-02-16 |
| NO309500B1 true NO309500B1 (no) | 2001-02-05 |
Family
ID=19901012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO973782A NO309500B1 (no) | 1997-08-15 | 1997-08-15 | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US6670659B1 (es) |
| EP (1) | EP1002319B1 (es) |
| JP (1) | JP3359331B2 (es) |
| KR (1) | KR100368817B1 (es) |
| CN (1) | CN1278336C (es) |
| AT (1) | ATE268498T1 (es) |
| AU (1) | AU734881B2 (es) |
| CA (1) | CA2301283C (es) |
| DE (1) | DE69824293T2 (es) |
| ES (1) | ES2222600T3 (es) |
| HK (1) | HK1033028A1 (es) |
| NO (1) | NO309500B1 (es) |
| RU (1) | RU2184400C2 (es) |
| WO (1) | WO1999012170A2 (es) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762950B2 (en) | 2001-11-30 | 2004-07-13 | Thin Film Electronics Asa | Folded memory layers |
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| US8115729B2 (en) | 1999-05-03 | 2012-02-14 | E Ink Corporation | Electrophoretic display element with filler particles |
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| NO315728B1 (no) | 2000-03-22 | 2003-10-13 | Thin Film Electronics Asa | Multidimensjonal adresseringsarkitektur for elektroniske innretninger |
| JP3901432B2 (ja) * | 2000-08-22 | 2007-04-04 | セイコーエプソン株式会社 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
| JP3940883B2 (ja) * | 2000-09-18 | 2007-07-04 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
| EP1213745A1 (en) * | 2000-12-05 | 2002-06-12 | Sony International (Europe) GmbH | Method of producing a ferroelectric memory and memory device |
| JP2002359358A (ja) * | 2001-03-26 | 2002-12-13 | Seiko Epson Corp | 強誘電体メモリ及び電子機器 |
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| US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
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| US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
| US6960479B2 (en) * | 2001-07-20 | 2005-11-01 | Intel Corporation | Stacked ferroelectric memory device and method of making same |
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| US6841818B2 (en) | 2001-09-03 | 2005-01-11 | Thin Film Electronics Asa | Non-volatile memory device utilizing dueterated materials |
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| KR100275782B1 (ko) * | 1995-05-10 | 2000-12-15 | 박호군 | 강유전 박막 제조방법 |
| JP3133922B2 (ja) * | 1995-06-09 | 2001-02-13 | シャープ株式会社 | 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子 |
| US5579257A (en) * | 1995-08-31 | 1996-11-26 | Motorola, Inc. | Method for reading and restoring data in a data storage element |
| US5969380A (en) * | 1996-06-07 | 1999-10-19 | Micron Technology, Inc. | Three dimensional ferroelectric memory |
| US6005791A (en) | 1996-06-12 | 1999-12-21 | Gudesen; Hans Gude | Optical logic element and optical logic device |
| EP1007012A4 (en) * | 1996-10-01 | 2006-01-18 | Cima Labs Inc | TASTE-MASKED MICRO-CAPSULE COMPOSITION AND MANUFACTURING PROCESS |
| JP4053647B2 (ja) * | 1997-02-27 | 2008-02-27 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| NO972803D0 (no) | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| NO304956B1 (no) | 1997-07-22 | 1999-03-08 | Opticom As | Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav |
-
1997
- 1997-08-15 NO NO973782A patent/NO309500B1/no unknown
-
1998
- 1998-08-13 AT AT98939830T patent/ATE268498T1/de not_active IP Right Cessation
- 1998-08-13 US US09/463,982 patent/US6670659B1/en not_active Expired - Fee Related
- 1998-08-13 CN CNB988102595A patent/CN1278336C/zh not_active Expired - Fee Related
- 1998-08-13 ES ES98939830T patent/ES2222600T3/es not_active Expired - Lifetime
- 1998-08-13 RU RU2000106441/09A patent/RU2184400C2/ru not_active IP Right Cessation
- 1998-08-13 KR KR10-2000-7001557A patent/KR100368817B1/ko not_active IP Right Cessation
- 1998-08-13 CA CA002301283A patent/CA2301283C/en not_active Expired - Fee Related
- 1998-08-13 AU AU88204/98A patent/AU734881B2/en not_active Ceased
- 1998-08-13 EP EP98939830A patent/EP1002319B1/en not_active Expired - Lifetime
- 1998-08-13 DE DE69824293T patent/DE69824293T2/de not_active Expired - Fee Related
- 1998-08-13 JP JP2000509089A patent/JP3359331B2/ja not_active Expired - Fee Related
- 1998-08-13 WO PCT/NO1998/000237 patent/WO1999012170A2/en active IP Right Grant
-
2001
- 2001-05-24 HK HK01103620A patent/HK1033028A1/xx not_active IP Right Cessation
- 2001-10-17 US US09/978,034 patent/US6498744B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762950B2 (en) | 2001-11-30 | 2004-07-13 | Thin Film Electronics Asa | Folded memory layers |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999012170A2 (en) | 1999-03-11 |
| CA2301283C (en) | 2002-01-29 |
| CA2301283A1 (en) | 1999-03-11 |
| DE69824293D1 (de) | 2004-07-08 |
| HK1033028A1 (en) | 2001-08-10 |
| CN1276905A (zh) | 2000-12-13 |
| CN1278336C (zh) | 2006-10-04 |
| EP1002319A2 (en) | 2000-05-24 |
| US6670659B1 (en) | 2003-12-30 |
| RU2184400C2 (ru) | 2002-06-27 |
| EP1002319B1 (en) | 2004-06-02 |
| JP3359331B2 (ja) | 2002-12-24 |
| DE69824293T2 (de) | 2005-06-16 |
| US20020044480A1 (en) | 2002-04-18 |
| AU734881B2 (en) | 2001-06-21 |
| NO973782D0 (no) | 1997-08-15 |
| NO973782L (no) | 1999-02-16 |
| JP2001515256A (ja) | 2001-09-18 |
| KR100368817B1 (ko) | 2003-01-25 |
| ES2222600T3 (es) | 2005-02-01 |
| KR20010022949A (ko) | 2001-03-26 |
| US6498744B2 (en) | 2002-12-24 |
| ATE268498T1 (de) | 2004-06-15 |
| AU8820498A (en) | 1999-03-22 |
| WO1999012170A3 (en) | 1999-05-06 |
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