NO309500B1 - Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme - Google Patents

Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme Download PDF

Info

Publication number
NO309500B1
NO309500B1 NO973782A NO973782A NO309500B1 NO 309500 B1 NO309500 B1 NO 309500B1 NO 973782 A NO973782 A NO 973782A NO 973782 A NO973782 A NO 973782A NO 309500 B1 NO309500 B1 NO 309500B1
Authority
NO
Norway
Prior art keywords
ferroelectric
electrode
data processing
processing device
electrodes
Prior art date
Application number
NO973782A
Other languages
English (en)
Norwegian (no)
Other versions
NO973782D0 (no
NO973782L (no
Inventor
Hans Gude Gudesen
Geirr I Leistad
Per-Erik Nordal
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO973782A priority Critical patent/NO309500B1/no
Publication of NO973782D0 publication Critical patent/NO973782D0/no
Priority to CA002301283A priority patent/CA2301283C/en
Priority to PCT/NO1998/000237 priority patent/WO1999012170A2/en
Priority to RU2000106441/09A priority patent/RU2184400C2/ru
Priority to EP98939830A priority patent/EP1002319B1/en
Priority to AU88204/98A priority patent/AU734881B2/en
Priority to KR10-2000-7001557A priority patent/KR100368817B1/ko
Priority to AT98939830T priority patent/ATE268498T1/de
Priority to DE69824293T priority patent/DE69824293T2/de
Priority to ES98939830T priority patent/ES2222600T3/es
Priority to CNB988102595A priority patent/CN1278336C/zh
Priority to JP2000509089A priority patent/JP3359331B2/ja
Priority to US09/463,982 priority patent/US6670659B1/en
Publication of NO973782L publication Critical patent/NO973782L/no
Publication of NO309500B1 publication Critical patent/NO309500B1/no
Priority to HK01103620A priority patent/HK1033028A1/xx
Priority to US09/978,034 priority patent/US6498744B2/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Credit Cards Or The Like (AREA)
  • Logic Circuits (AREA)
  • Surgical Instruments (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
NO973782A 1997-08-15 1997-08-15 Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme NO309500B1 (no)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NO973782A NO309500B1 (no) 1997-08-15 1997-08-15 Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
US09/463,982 US6670659B1 (en) 1997-08-15 1998-08-13 Ferroelectric data processing device
KR10-2000-7001557A KR100368817B1 (ko) 1997-08-15 1998-08-13 강유전 데이터 처리장치
DE69824293T DE69824293T2 (de) 1997-08-15 1998-08-13 Ferroelektrische datenverarbeitungsanordnung
RU2000106441/09A RU2184400C2 (ru) 1997-08-15 1998-08-13 Сегнетоэлектрическое устройство обработки данных
EP98939830A EP1002319B1 (en) 1997-08-15 1998-08-13 A ferroelectric data processing device
AU88204/98A AU734881B2 (en) 1997-08-15 1998-08-13 A ferroelectric data processing device
CA002301283A CA2301283C (en) 1997-08-15 1998-08-13 A ferroelectric data processing device
AT98939830T ATE268498T1 (de) 1997-08-15 1998-08-13 Ferroelektrische datenverarbeitungsanordnung
PCT/NO1998/000237 WO1999012170A2 (en) 1997-08-15 1998-08-13 A ferroelectric data processing device
ES98939830T ES2222600T3 (es) 1997-08-15 1998-08-13 Dispositivo ferroelectrico de tratamiento de datos.
CNB988102595A CN1278336C (zh) 1997-08-15 1998-08-13 一种铁电体数据处理器件
JP2000509089A JP3359331B2 (ja) 1997-08-15 1998-08-13 強誘電体データ処理装置、その製造方法、その使用方法、並びにこの装置の論理素子のアドレス指定における読み取り方法
HK01103620A HK1033028A1 (en) 1997-08-15 2001-05-24 A ferroelectric data processing device
US09/978,034 US6498744B2 (en) 1997-08-15 2001-10-17 Ferroelectric data processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO973782A NO309500B1 (no) 1997-08-15 1997-08-15 Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme

Publications (3)

Publication Number Publication Date
NO973782D0 NO973782D0 (no) 1997-08-15
NO973782L NO973782L (no) 1999-02-16
NO309500B1 true NO309500B1 (no) 2001-02-05

Family

ID=19901012

Family Applications (1)

Application Number Title Priority Date Filing Date
NO973782A NO309500B1 (no) 1997-08-15 1997-08-15 Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme

Country Status (14)

Country Link
US (2) US6670659B1 (es)
EP (1) EP1002319B1 (es)
JP (1) JP3359331B2 (es)
KR (1) KR100368817B1 (es)
CN (1) CN1278336C (es)
AT (1) ATE268498T1 (es)
AU (1) AU734881B2 (es)
CA (1) CA2301283C (es)
DE (1) DE69824293T2 (es)
ES (1) ES2222600T3 (es)
HK (1) HK1033028A1 (es)
NO (1) NO309500B1 (es)
RU (1) RU2184400C2 (es)
WO (1) WO1999012170A2 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762950B2 (en) 2001-11-30 2004-07-13 Thin Film Electronics Asa Folded memory layers

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE276536T1 (de) 1998-07-08 2004-10-15 E Ink Corp Verfahren zur verbesserung der farbwiedergabe in elektrophoretischen vorrichtungen, welche mikrokapseln verwenden
US8115729B2 (en) 1999-05-03 2012-02-14 E Ink Corporation Electrophoretic display element with filler particles
JP3622598B2 (ja) * 1999-10-25 2005-02-23 セイコーエプソン株式会社 不揮発性メモリ素子の製造方法
JP2001156264A (ja) * 1999-11-26 2001-06-08 Dainippon Printing Co Ltd 非破壊読み取り型強誘電体メモリ
JP2001230384A (ja) * 2000-02-17 2001-08-24 Seiko Epson Corp 多層強誘電体記憶装置
NO315728B1 (no) 2000-03-22 2003-10-13 Thin Film Electronics Asa Multidimensjonal adresseringsarkitektur for elektroniske innretninger
JP3901432B2 (ja) * 2000-08-22 2007-04-04 セイコーエプソン株式会社 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
JP3940883B2 (ja) * 2000-09-18 2007-07-04 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法
EP1213745A1 (en) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Method of producing a ferroelectric memory and memory device
JP2002359358A (ja) * 2001-03-26 2002-12-13 Seiko Epson Corp 強誘電体メモリ及び電子機器
JP4058971B2 (ja) * 2001-03-26 2008-03-12 セイコーエプソン株式会社 強誘電体メモリ及び電子機器
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6858862B2 (en) 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
US7275135B2 (en) 2001-08-31 2007-09-25 Intel Corporation Hardware updated metadata for non-volatile mass storage cache
US6841818B2 (en) 2001-09-03 2005-01-11 Thin Film Electronics Asa Non-volatile memory device utilizing dueterated materials
NO314606B1 (no) * 2001-09-03 2003-04-14 Thin Film Electronics Asa Ikke-flyktig minneinnretning
US20030074524A1 (en) * 2001-10-16 2003-04-17 Intel Corporation Mass storage caching processes for power reduction
US7202847B2 (en) 2002-06-28 2007-04-10 E Ink Corporation Voltage modulated driver circuits for electro-optic displays
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
NO20015871D0 (no) * 2001-11-30 2001-11-30 Thin Film Electronics Asa Minneinnretning med flettede lag
US6809362B2 (en) * 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
NO315399B1 (no) 2002-03-01 2003-08-25 Thin Film Electronics Asa Minnecelle
JP2003263804A (ja) * 2002-03-08 2003-09-19 Pioneer Electronic Corp 誘電体記録媒体とその製造方法及びその製造装置
JP4214708B2 (ja) 2002-03-27 2009-01-28 セイコーエプソン株式会社 強誘電体記憶装置及びその駆動方法
US7103724B2 (en) * 2002-04-01 2006-09-05 Intel Corporation Method and apparatus to generate cache data
US7727777B2 (en) * 2002-05-31 2010-06-01 Ebrahim Andideh Forming ferroelectric polymer memories
US6828685B2 (en) * 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
JP2004031728A (ja) * 2002-06-27 2004-01-29 Matsushita Electric Ind Co Ltd 記憶装置
US6812509B2 (en) * 2002-06-28 2004-11-02 Palo Alto Research Center Inc. Organic ferroelectric memory cells
US7049153B2 (en) * 2003-04-23 2006-05-23 Micron Technology, Inc. Polymer-based ferroelectric memory
JP2005085332A (ja) 2003-09-05 2005-03-31 Seiko Epson Corp 強誘電体記憶装置、その駆動方法及び駆動回路
US7130212B2 (en) * 2003-11-26 2006-10-31 International Business Machines Corporation Field effect device with a channel with a switchable conductivity
US7001782B1 (en) * 2003-12-29 2006-02-21 Intel Corporation Method and apparatus for filling interlayer vias on ferroelectric polymer substrates
NO321555B1 (no) * 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
US7681998B2 (en) * 2004-06-02 2010-03-23 Fujifilm Corporation Laminated piezoelectric element, liquid droplet ejection head using same, and image forming apparatus comprising same
NO321280B1 (no) 2004-07-22 2006-04-18 Thin Film Electronics Asa Organisk, elektronisk krets og fremgangsmate til dens fremstilling
KR100607222B1 (ko) 2004-12-29 2006-08-01 한양대학교 산학협력단 교차하는 전극 사이에 나노 결정체를 이용한 논리 소자또는 기억 소자 및 그 제조 방법
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
US20070041233A1 (en) * 2005-08-19 2007-02-22 Seagate Technology Llc Wake-up of ferroelectric thin films for probe storage
KR100630437B1 (ko) * 2005-08-31 2006-10-02 삼성전자주식회사 비휘발성 유기물 저항 메모리 장치 및 그 제조 방법
SG135079A1 (en) * 2006-03-02 2007-09-28 Sony Corp Memory device which comprises a multi-layer capacitor
KR100866534B1 (ko) * 2007-01-31 2008-11-03 충남대학교산학협력단 액정 표시 장치의 전극
GB2447982A (en) * 2007-03-30 2008-10-01 Seiko Epson Corp Non-changeable read-out (NCRO)
CN101308876B (zh) * 2007-05-14 2014-08-06 旺宏电子股份有限公司 存储器结构及其操作方法
US8476735B2 (en) 2007-05-29 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable semiconductor interposer for electronic package and method of forming
US7718546B2 (en) * 2007-06-27 2010-05-18 Sandisk 3D Llc Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon
FR2925748B1 (fr) * 2007-12-21 2010-01-29 Commissariat Energie Atomique Support de stockage de donnees et procede associe
SG157268A1 (en) * 2008-05-30 2009-12-29 Sony Corp Ferroelectric polymer
CN101773814B (zh) * 2010-01-21 2012-03-14 高婧 多稳态微流控器件
US8416609B2 (en) 2010-02-15 2013-04-09 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US8437174B2 (en) 2010-02-15 2013-05-07 Micron Technology, Inc. Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
US8634224B2 (en) 2010-08-12 2014-01-21 Micron Technology, Inc. Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
RU2608958C2 (ru) * 2012-07-09 2017-01-27 ЗетТиИ Корпорейшн Способ и устройство сохранения данных
AU2017367692B2 (en) * 2016-12-02 2022-04-14 Carver Scientific, Inc. Memory device and capacitive energy storage device
CN111052279B (zh) * 2017-05-26 2022-07-26 弗莱士功率电容器有限责任公司 高能量密度电容器及无线充电系统
US20190035562A1 (en) 2017-05-26 2019-01-31 Flash Power Capacitors, Llc High energy density capacitor system and method
US10867654B2 (en) 2019-01-17 2020-12-15 Xerox Corporation Method for testing a memory device
CN110428858B (zh) * 2019-07-11 2021-09-24 清华大学 基于具有滞回特性器件的静态存储器
CN111524891B (zh) * 2020-03-20 2023-12-12 南京大学 一种铁电柔性逻辑运算器件及其制造方法
US11393832B2 (en) * 2020-07-15 2022-07-19 Ferroelectric Memory Gmbh Memory cell arrangement
US20220343962A1 (en) * 2021-04-22 2022-10-27 Seagate Technology Llc System on chip (soc) with processor and integrated ferroelectric memory

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541159B2 (es) * 1974-10-21 1979-01-20
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法,製造方法
US5084278A (en) * 1989-06-02 1992-01-28 Nortec Development Associates, Inc. Taste-masked pharmaceutical compositions
US5329485A (en) * 1990-11-01 1994-07-12 Olympus Optical Co., Ltd. Memory device
JP2802685B2 (ja) * 1991-01-08 1998-09-24 キヤノン株式会社 強誘電性液晶装置
JP3142919B2 (ja) * 1991-11-06 2001-03-07 旭化成株式会社 セルロース誘導体ラテックス及びその製法
US5390142A (en) * 1992-05-26 1995-02-14 Kappa Numerics, Inc. Memory material and method for its manufacture
JPH0660635A (ja) * 1992-08-06 1994-03-04 Olympus Optical Co Ltd 強誘電体メモリ装置
US5375085A (en) 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
US5666305A (en) * 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
JP3570692B2 (ja) 1994-01-18 2004-09-29 ローム株式会社 不揮発性メモリ
JP3127751B2 (ja) 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
KR100275782B1 (ko) * 1995-05-10 2000-12-15 박호군 강유전 박막 제조방법
JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
US5579257A (en) * 1995-08-31 1996-11-26 Motorola, Inc. Method for reading and restoring data in a data storage element
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
US6005791A (en) 1996-06-12 1999-12-21 Gudesen; Hans Gude Optical logic element and optical logic device
EP1007012A4 (en) * 1996-10-01 2006-01-18 Cima Labs Inc TASTE-MASKED MICRO-CAPSULE COMPOSITION AND MANUFACTURING PROCESS
JP4053647B2 (ja) * 1997-02-27 2008-02-27 株式会社東芝 半導体記憶装置及びその製造方法
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
NO304956B1 (no) 1997-07-22 1999-03-08 Opticom As Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762950B2 (en) 2001-11-30 2004-07-13 Thin Film Electronics Asa Folded memory layers

Also Published As

Publication number Publication date
WO1999012170A2 (en) 1999-03-11
CA2301283C (en) 2002-01-29
CA2301283A1 (en) 1999-03-11
DE69824293D1 (de) 2004-07-08
HK1033028A1 (en) 2001-08-10
CN1276905A (zh) 2000-12-13
CN1278336C (zh) 2006-10-04
EP1002319A2 (en) 2000-05-24
US6670659B1 (en) 2003-12-30
RU2184400C2 (ru) 2002-06-27
EP1002319B1 (en) 2004-06-02
JP3359331B2 (ja) 2002-12-24
DE69824293T2 (de) 2005-06-16
US20020044480A1 (en) 2002-04-18
AU734881B2 (en) 2001-06-21
NO973782D0 (no) 1997-08-15
NO973782L (no) 1999-02-16
JP2001515256A (ja) 2001-09-18
KR100368817B1 (ko) 2003-01-25
ES2222600T3 (es) 2005-02-01
KR20010022949A (ko) 2001-03-26
US6498744B2 (en) 2002-12-24
ATE268498T1 (de) 2004-06-15
AU8820498A (en) 1999-03-22
WO1999012170A3 (en) 1999-05-06

Similar Documents

Publication Publication Date Title
NO309500B1 (no) Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
JP2788265B2 (ja) 強誘電体メモリ及びその駆動方法,製造方法
US7251154B2 (en) Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
TWI344204B (en) Ultra low-cost solid-state memory
CN100541654C (zh) 存储器件
KR101773731B1 (ko) 멀티-비트 강유전체 메모리 디바이스 및 멀티-비트 강유전체 메모리 디바이스를 형성하는 방법
JP3895640B2 (ja) クロスポイントダイオードメモリアレイのアドレス指定及びセンシング
RU2000106441A (ru) Сегнетоэлектрическое устройство обработки данных
JP2020533779A (ja) 強誘電体メモリ集積回路及びその操作方法並びに製造方法
US20180277208A1 (en) Methods and apparatus for programming barrier modulated memory cells
JP2004510283A5 (es)
US20220343962A1 (en) System on chip (soc) with processor and integrated ferroelectric memory
JP2788290B2 (ja) 強誘電体メモリ
EP1481398B1 (en) A memory cell
CN1190796C (zh) 具有基准电位的集成存储器与这种存储器的运行方法
TWI755154B (zh) 基於計數器及錯誤校正碼反饋用於記憶體單元之即時程式化及驗證方法
NO314606B1 (no) Ikke-flyktig minneinnretning
JP2001229666A (ja) メモリ装置及びそのデータ読出し方法
JPH0383290A (ja) 光メモリデバイス