MX9710043A - Fabricacion de dispositivos semiconductores. - Google Patents
Fabricacion de dispositivos semiconductores.Info
- Publication number
- MX9710043A MX9710043A MX9710043A MX9710043A MX9710043A MX 9710043 A MX9710043 A MX 9710043A MX 9710043 A MX9710043 A MX 9710043A MX 9710043 A MX9710043 A MX 9710043A MX 9710043 A MX9710043 A MX 9710043A
- Authority
- MX
- Mexico
- Prior art keywords
- trench
- semiconductor device
- device fabrication
- mask
- doped
- Prior art date
Links
- 238000005389 semiconductor device fabrication Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000007772 electrode material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0869—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Glass Compositions (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Bipolar Transistors (AREA)
- Led Devices (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Un método para formar una ranura como parte de la fabricacion de un dispositivo semiconductor, tal y como un dispositivo ranura de compuerta de potencia, un transistor logico o una celda de memoria. La ranura (3) está formada en el substrato del semiconductor (1) usando una máscara (2). Con la máscara (2) aun sitio, la ranura se llena parcialmente con material electrodo (5) y las paredes laterales de la ranura se recubren.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9512089.5A GB9512089D0 (en) | 1995-06-14 | 1995-06-14 | Semiconductor device fabrication |
PCT/GB1996/001445 WO1997000536A1 (en) | 1995-06-14 | 1996-06-14 | Semiconductor device fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
MX9710043A true MX9710043A (es) | 1998-03-31 |
Family
ID=10776051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9710043A MX9710043A (es) | 1995-06-14 | 1996-06-14 | Fabricacion de dispositivos semiconductores. |
Country Status (12)
Country | Link |
---|---|
US (1) | US6274437B1 (es) |
EP (1) | EP0834194B1 (es) |
JP (1) | JPH11508087A (es) |
KR (1) | KR19990022910A (es) |
AT (1) | ATE210893T1 (es) |
AU (1) | AU6232296A (es) |
CA (1) | CA2220643A1 (es) |
DE (1) | DE69617952T2 (es) |
ES (1) | ES2170862T3 (es) |
GB (1) | GB9512089D0 (es) |
MX (1) | MX9710043A (es) |
WO (1) | WO1997000536A1 (es) |
Families Citing this family (48)
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GB2323703B (en) * | 1997-03-13 | 2002-02-13 | United Microelectronics Corp | Method to inhibit the formation of ion implantation induced edge defects |
JP3281844B2 (ja) * | 1997-08-26 | 2002-05-13 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP3281847B2 (ja) * | 1997-09-26 | 2002-05-13 | 三洋電機株式会社 | 半導体装置の製造方法 |
GB9723468D0 (en) * | 1997-11-07 | 1998-01-07 | Zetex Plc | Method of semiconductor device fabrication |
DE19908809B4 (de) * | 1999-03-01 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer MOS-Transistorstruktur mit einstellbarer Schwellspannung |
US6316806B1 (en) * | 1999-03-31 | 2001-11-13 | Fairfield Semiconductor Corporation | Trench transistor with a self-aligned source |
JP4091242B2 (ja) * | 1999-10-18 | 2008-05-28 | セイコーインスツル株式会社 | 縦形mosトランジスタ及びその製造方法 |
DE10009345C1 (de) * | 2000-02-28 | 2001-07-19 | Infineon Technologies Ag | Feldeffekt-Transistoranordnung mit hoher Latch-up-Festigkeit und Verfahren zu deren Herstellung |
US6509240B2 (en) * | 2000-05-15 | 2003-01-21 | International Rectifier Corporation | Angle implant process for cellular deep trench sidewall doping |
US6627949B2 (en) * | 2000-06-02 | 2003-09-30 | General Semiconductor, Inc. | High voltage power MOSFET having low on-resistance |
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US8362547B2 (en) | 2005-02-11 | 2013-01-29 | Alpha & Omega Semiconductor Limited | MOS device with Schottky barrier controlling layer |
US7285822B2 (en) * | 2005-02-11 | 2007-10-23 | Alpha & Omega Semiconductor, Inc. | Power MOS device |
US7504306B2 (en) | 2005-04-06 | 2009-03-17 | Fairchild Semiconductor Corporation | Method of forming trench gate field effect transistor with recessed mesas |
DE102005047058B4 (de) * | 2005-09-30 | 2009-09-24 | Qimonda Ag | Herstellungsverfahren für einen Graben-Transistor und entsprechender Graben-Transistor |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
EP1892750B1 (en) * | 2006-08-23 | 2012-11-28 | Imec | Method for doping a fin-based semiconductor device |
US7544571B2 (en) * | 2006-09-20 | 2009-06-09 | Fairchild Semiconductor Corporation | Trench gate FET with self-aligned features |
JP4229165B2 (ja) * | 2006-10-13 | 2009-02-25 | トヨタ自動車株式会社 | 車両およびその制御方法 |
US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8227855B2 (en) | 2009-02-09 | 2012-07-24 | Fairchild Semiconductor Corporation | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
US8148749B2 (en) | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
US8049276B2 (en) | 2009-06-12 | 2011-11-01 | Fairchild Semiconductor Corporation | Reduced process sensitivity of electrode-semiconductor rectifiers |
KR101186011B1 (ko) | 2009-11-27 | 2012-09-25 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그의 형성 방법 |
JP2011134985A (ja) * | 2009-12-25 | 2011-07-07 | Fuji Electric Co Ltd | トレンチゲート型半導体装置とその製造方法 |
WO2011108191A1 (ja) * | 2010-03-05 | 2011-09-09 | パナソニック株式会社 | 半導体装置の製造方法および半導体装置 |
JP5626356B2 (ja) | 2010-05-27 | 2014-11-19 | 富士電機株式会社 | Mos駆動型半導体装置およびmos駆動型半導体装置の製造方法 |
JP5537359B2 (ja) | 2010-09-15 | 2014-07-02 | 株式会社東芝 | 半導体装置 |
JP5767869B2 (ja) * | 2011-06-22 | 2015-08-26 | 新電元工業株式会社 | 半導体装置の製造方法 |
JP5661583B2 (ja) * | 2011-09-21 | 2015-01-28 | 株式会社東芝 | 半導体装置の製造方法 |
TWI455246B (zh) * | 2012-01-02 | 2014-10-01 | Inotera Memories Inc | 隔離區的形成方法及其結構 |
KR101862345B1 (ko) * | 2012-02-27 | 2018-07-05 | 삼성전자주식회사 | 모오스 전계효과 트랜지스터를 포함하는 반도체 장치 및 그 제조 방법 |
CN104241356B (zh) * | 2013-06-17 | 2017-05-24 | 北大方正集团有限公司 | 一种dmos器件及其制作方法 |
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JP6822088B2 (ja) * | 2016-11-15 | 2021-01-27 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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MY107475A (en) * | 1990-05-31 | 1995-12-30 | Canon Kk | Semiconductor device and method for producing the same. |
KR930002673B1 (ko) * | 1990-07-05 | 1993-04-07 | 삼성전자 주식회사 | 고융점금속 성장방법 |
KR940006679B1 (ko) * | 1991-09-26 | 1994-07-25 | 현대전자산업 주식회사 | 수직형 트랜지스터를 갖는 dram셀 및 그 제조방법 |
US5391506A (en) * | 1992-01-31 | 1995-02-21 | Kawasaki Steel Corporation | Manufacturing method for semiconductor devices with source/drain formed in substrate projection. |
JP2837014B2 (ja) * | 1992-02-17 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP3311070B2 (ja) * | 1993-03-15 | 2002-08-05 | 株式会社東芝 | 半導体装置 |
-
1995
- 1995-06-14 GB GBGB9512089.5A patent/GB9512089D0/en active Pending
-
1996
- 1996-06-14 WO PCT/GB1996/001445 patent/WO1997000536A1/en not_active Application Discontinuation
- 1996-06-14 US US08/973,147 patent/US6274437B1/en not_active Expired - Lifetime
- 1996-06-14 CA CA002220643A patent/CA2220643A1/en not_active Abandoned
- 1996-06-14 MX MX9710043A patent/MX9710043A/es not_active IP Right Cessation
- 1996-06-14 DE DE69617952T patent/DE69617952T2/de not_active Expired - Lifetime
- 1996-06-14 ES ES96920938T patent/ES2170862T3/es not_active Expired - Lifetime
- 1996-06-14 KR KR1019970709379A patent/KR19990022910A/ko not_active Application Discontinuation
- 1996-06-14 JP JP9502818A patent/JPH11508087A/ja not_active Ceased
- 1996-06-14 EP EP96920938A patent/EP0834194B1/en not_active Expired - Lifetime
- 1996-06-14 AU AU62322/96A patent/AU6232296A/en not_active Abandoned
- 1996-06-14 AT AT96920938T patent/ATE210893T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
ES2170862T3 (es) | 2002-08-16 |
GB9512089D0 (en) | 1995-08-09 |
ATE210893T1 (de) | 2001-12-15 |
WO1997000536A1 (en) | 1997-01-03 |
EP0834194B1 (en) | 2001-12-12 |
CA2220643A1 (en) | 1997-01-03 |
JPH11508087A (ja) | 1999-07-13 |
DE69617952D1 (de) | 2002-01-24 |
DE69617952T2 (de) | 2002-08-22 |
AU6232296A (en) | 1997-01-15 |
US6274437B1 (en) | 2001-08-14 |
EP0834194A1 (en) | 1998-04-08 |
KR19990022910A (ko) | 1999-03-25 |
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