KR970004102A - 집적화 박막 태양전지와 그 제조방법 - Google Patents

집적화 박막 태양전지와 그 제조방법 Download PDF

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Publication number
KR970004102A
KR970004102A KR1019960020779A KR19960020779A KR970004102A KR 970004102 A KR970004102 A KR 970004102A KR 1019960020779 A KR1019960020779 A KR 1019960020779A KR 19960020779 A KR19960020779 A KR 19960020779A KR 970004102 A KR970004102 A KR 970004102A
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KR
South Korea
Prior art keywords
electrode layer
layer
solar cell
thin film
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019960020779A
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English (en)
Korean (ko)
Inventor
신이치로 구라타
가쓰히코 하야시
아쓰오 이사카와
마사타카 곤도
Original Assignee
후루타 다케시
가네가후치가가쿠고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후루타 다케시, 가네가후치가가쿠고교 가부시키가이샤 filed Critical 후루타 다케시
Publication of KR970004102A publication Critical patent/KR970004102A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)
KR1019960020779A 1995-06-15 1996-06-11 집적화 박막 태양전지와 그 제조방법 Ceased KR970004102A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14884795A JP3653800B2 (ja) 1995-06-15 1995-06-15 集積化薄膜太陽電池の製造方法
JP7-148847 1995-06-15

Publications (1)

Publication Number Publication Date
KR970004102A true KR970004102A (ko) 1997-01-29

Family

ID=15462073

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960020779A Ceased KR970004102A (ko) 1995-06-15 1996-06-11 집적화 박막 태양전지와 그 제조방법

Country Status (6)

Country Link
EP (1) EP0749161B1 (cg-RX-API-DMAC10.html)
JP (1) JP3653800B2 (cg-RX-API-DMAC10.html)
KR (1) KR970004102A (cg-RX-API-DMAC10.html)
AU (1) AU704036B2 (cg-RX-API-DMAC10.html)
DE (1) DE69634059T2 (cg-RX-API-DMAC10.html)
TW (1) TW302553B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416139B1 (ko) * 2001-04-04 2004-01-31 삼성에스디아이 주식회사 태양 전지 모듈

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265652B1 (en) * 1995-06-15 2001-07-24 Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha Integrated thin-film solar battery and method of manufacturing the same
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6468828B1 (en) * 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
US6274804B1 (en) 1999-07-28 2001-08-14 Angewandte Solarenergie - Ase Gmbh Thin-film solar module
AU772539B2 (en) 1999-07-29 2004-04-29 Kaneka Corporation Method for cleaning photovoltaic module and cleaning apparatus
JP2001044466A (ja) * 1999-07-29 2001-02-16 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の洗浄方法及びその装置
EP2835834A3 (en) * 1999-08-25 2015-06-10 Kaneka Corporation Thin film photoelectric conversion module and method of manufacturing the same
JP4573162B2 (ja) * 2004-09-16 2010-11-04 富士電機システムズ株式会社 透明導電膜の製造方法
JP2006339342A (ja) * 2005-06-01 2006-12-14 Shin Etsu Handotai Co Ltd 太陽電池および太陽電池の製造方法
KR101144808B1 (ko) * 2008-09-01 2012-05-11 엘지전자 주식회사 박막형 태양전지 제조방법 및 이를 이용한 박막형 태양전지
US20100078064A1 (en) * 2008-09-29 2010-04-01 Thinsilicion Corporation Monolithically-integrated solar module
CN102272938B (zh) * 2009-01-29 2013-10-09 京瓷株式会社 光电转换元件、光电转换模块及光电转换元件的制造方法
US8993877B2 (en) * 2009-06-23 2015-03-31 Toray Engineering Co., Ltd. Solar battery
DE102009027852A1 (de) * 2009-07-20 2011-01-27 Q-Cells Se Dünnschicht-Solarmodul mit verbesserter Zusammenschaltung von Solarzellen sowie Verfahren zu dessen Herstellung
DE102009055675B4 (de) 2009-11-25 2016-05-19 Calyxo Gmbh Photovoltaik-Modulstruktur für die Dünnschichtphotovoltaik mit einer elektrischen Leitungsverbindung und Verfahren zur Herstellung der elektrischen Leitungsverbindung
CN102859712A (zh) 2010-04-20 2013-01-02 京瓷株式会社 太阳能电池元件及使用该太阳能电池元件的太阳能电池模块
JP5539081B2 (ja) * 2010-07-16 2014-07-02 株式会社カネカ 集積型薄膜光電変換装置の製造方法
NL2007344C2 (en) * 2011-09-02 2013-03-05 Stichting Energie Interdigitated back contact photovoltaic cell with floating front surface emitter regions.
KR101370554B1 (ko) * 2012-06-08 2014-03-10 재단법인대구경북과학기술원 박막 태양전지

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041878B2 (ja) * 1979-02-14 1985-09-19 シャープ株式会社 薄膜太陽電池装置
DE3382695T2 (de) * 1982-11-24 1993-09-23 Semiconductor Energy Lab Fotovoltaischer wandler.
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法
US4755475A (en) * 1986-02-18 1988-07-05 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
DE3714920C1 (de) * 1987-05-05 1988-07-14 Messerschmitt Boelkow Blohm Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung
JPH06104465A (ja) * 1992-09-22 1994-04-15 Fuji Electric Co Ltd 薄膜太陽電池およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416139B1 (ko) * 2001-04-04 2004-01-31 삼성에스디아이 주식회사 태양 전지 모듈

Also Published As

Publication number Publication date
AU704036B2 (en) 1999-04-15
TW302553B (cg-RX-API-DMAC10.html) 1997-04-11
JP3653800B2 (ja) 2005-06-02
JPH098337A (ja) 1997-01-10
AU5589196A (en) 1997-01-02
DE69634059D1 (de) 2005-01-27
DE69634059T2 (de) 2005-05-19
EP0749161A3 (en) 1998-07-15
EP0749161A2 (en) 1996-12-18
EP0749161B1 (en) 2004-12-22

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