JP3653800B2 - 集積化薄膜太陽電池の製造方法 - Google Patents

集積化薄膜太陽電池の製造方法 Download PDF

Info

Publication number
JP3653800B2
JP3653800B2 JP14884795A JP14884795A JP3653800B2 JP 3653800 B2 JP3653800 B2 JP 3653800B2 JP 14884795 A JP14884795 A JP 14884795A JP 14884795 A JP14884795 A JP 14884795A JP 3653800 B2 JP3653800 B2 JP 3653800B2
Authority
JP
Japan
Prior art keywords
layer
electrode layer
solar cell
conductor layer
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP14884795A
Other languages
English (en)
Japanese (ja)
Other versions
JPH098337A (ja
Inventor
愼一郎 倉田
克彦 林
敦夫 石川
正隆 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Priority to JP14884795A priority Critical patent/JP3653800B2/ja
Priority to TW085105502A priority patent/TW302553B/zh
Priority to KR1019960020779A priority patent/KR970004102A/ko
Priority to AU55891/96A priority patent/AU704036B2/en
Priority to EP96109504A priority patent/EP0749161B1/en
Priority to DE69634059T priority patent/DE69634059T2/de
Publication of JPH098337A publication Critical patent/JPH098337A/ja
Priority to US09/033,933 priority patent/US6265652B1/en
Priority to US09/863,351 priority patent/US6437231B2/en
Application granted granted Critical
Publication of JP3653800B2 publication Critical patent/JP3653800B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)
JP14884795A 1995-06-15 1995-06-15 集積化薄膜太陽電池の製造方法 Expired - Fee Related JP3653800B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP14884795A JP3653800B2 (ja) 1995-06-15 1995-06-15 集積化薄膜太陽電池の製造方法
TW085105502A TW302553B (cg-RX-API-DMAC10.html) 1995-06-15 1996-05-09
KR1019960020779A KR970004102A (ko) 1995-06-15 1996-06-11 집적화 박막 태양전지와 그 제조방법
AU55891/96A AU704036B2 (en) 1995-06-15 1996-06-12 Integrated thin-film solar battery and method of manufacturing the same
EP96109504A EP0749161B1 (en) 1995-06-15 1996-06-13 Integrated thin-film solar battery and method of manufacturing the same
DE69634059T DE69634059T2 (de) 1995-06-15 1996-06-13 Integriertes Dünnschicht-Sonnenzellenmodul und Herstellungsverfahren
US09/033,933 US6265652B1 (en) 1995-06-15 1998-03-03 Integrated thin-film solar battery and method of manufacturing the same
US09/863,351 US6437231B2 (en) 1995-06-15 2001-05-24 Integrated thin-film solar battery and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14884795A JP3653800B2 (ja) 1995-06-15 1995-06-15 集積化薄膜太陽電池の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005008027A Division JP4077456B2 (ja) 2005-01-14 2005-01-14 集積化薄膜太陽電池

Publications (2)

Publication Number Publication Date
JPH098337A JPH098337A (ja) 1997-01-10
JP3653800B2 true JP3653800B2 (ja) 2005-06-02

Family

ID=15462073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14884795A Expired - Fee Related JP3653800B2 (ja) 1995-06-15 1995-06-15 集積化薄膜太陽電池の製造方法

Country Status (6)

Country Link
EP (1) EP0749161B1 (cg-RX-API-DMAC10.html)
JP (1) JP3653800B2 (cg-RX-API-DMAC10.html)
KR (1) KR970004102A (cg-RX-API-DMAC10.html)
AU (1) AU704036B2 (cg-RX-API-DMAC10.html)
DE (1) DE69634059T2 (cg-RX-API-DMAC10.html)
TW (1) TW302553B (cg-RX-API-DMAC10.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265652B1 (en) * 1995-06-15 2001-07-24 Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha Integrated thin-film solar battery and method of manufacturing the same
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6468828B1 (en) * 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
US6274804B1 (en) 1999-07-28 2001-08-14 Angewandte Solarenergie - Ase Gmbh Thin-film solar module
AU772539B2 (en) 1999-07-29 2004-04-29 Kaneka Corporation Method for cleaning photovoltaic module and cleaning apparatus
JP2001044466A (ja) * 1999-07-29 2001-02-16 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の洗浄方法及びその装置
EP2835834A3 (en) * 1999-08-25 2015-06-10 Kaneka Corporation Thin film photoelectric conversion module and method of manufacturing the same
KR100416139B1 (ko) * 2001-04-04 2004-01-31 삼성에스디아이 주식회사 태양 전지 모듈
JP4573162B2 (ja) * 2004-09-16 2010-11-04 富士電機システムズ株式会社 透明導電膜の製造方法
JP2006339342A (ja) * 2005-06-01 2006-12-14 Shin Etsu Handotai Co Ltd 太陽電池および太陽電池の製造方法
KR101144808B1 (ko) * 2008-09-01 2012-05-11 엘지전자 주식회사 박막형 태양전지 제조방법 및 이를 이용한 박막형 태양전지
US20100078064A1 (en) * 2008-09-29 2010-04-01 Thinsilicion Corporation Monolithically-integrated solar module
CN102272938B (zh) * 2009-01-29 2013-10-09 京瓷株式会社 光电转换元件、光电转换模块及光电转换元件的制造方法
US8993877B2 (en) * 2009-06-23 2015-03-31 Toray Engineering Co., Ltd. Solar battery
DE102009027852A1 (de) * 2009-07-20 2011-01-27 Q-Cells Se Dünnschicht-Solarmodul mit verbesserter Zusammenschaltung von Solarzellen sowie Verfahren zu dessen Herstellung
DE102009055675B4 (de) 2009-11-25 2016-05-19 Calyxo Gmbh Photovoltaik-Modulstruktur für die Dünnschichtphotovoltaik mit einer elektrischen Leitungsverbindung und Verfahren zur Herstellung der elektrischen Leitungsverbindung
CN102859712A (zh) 2010-04-20 2013-01-02 京瓷株式会社 太阳能电池元件及使用该太阳能电池元件的太阳能电池模块
JP5539081B2 (ja) * 2010-07-16 2014-07-02 株式会社カネカ 集積型薄膜光電変換装置の製造方法
NL2007344C2 (en) * 2011-09-02 2013-03-05 Stichting Energie Interdigitated back contact photovoltaic cell with floating front surface emitter regions.
KR101370554B1 (ko) * 2012-06-08 2014-03-10 재단법인대구경북과학기술원 박막 태양전지

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041878B2 (ja) * 1979-02-14 1985-09-19 シャープ株式会社 薄膜太陽電池装置
DE3382695T2 (de) * 1982-11-24 1993-09-23 Semiconductor Energy Lab Fotovoltaischer wandler.
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法
US4755475A (en) * 1986-02-18 1988-07-05 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
DE3714920C1 (de) * 1987-05-05 1988-07-14 Messerschmitt Boelkow Blohm Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung
JPH06104465A (ja) * 1992-09-22 1994-04-15 Fuji Electric Co Ltd 薄膜太陽電池およびその製造方法

Also Published As

Publication number Publication date
AU704036B2 (en) 1999-04-15
KR970004102A (ko) 1997-01-29
TW302553B (cg-RX-API-DMAC10.html) 1997-04-11
JPH098337A (ja) 1997-01-10
AU5589196A (en) 1997-01-02
DE69634059D1 (de) 2005-01-27
DE69634059T2 (de) 2005-05-19
EP0749161A3 (en) 1998-07-15
EP0749161A2 (en) 1996-12-18
EP0749161B1 (en) 2004-12-22

Similar Documents

Publication Publication Date Title
JP3653800B2 (ja) 集積化薄膜太陽電池の製造方法
US6265652B1 (en) Integrated thin-film solar battery and method of manufacturing the same
US6294722B1 (en) Integrated thin-film solar battery
US6384315B1 (en) Solar cell module
JP4194468B2 (ja) 太陽電池およびその製造方法
JP3755048B2 (ja) 集積化薄膜タンデム太陽電池とその製造方法
KR20100023759A (ko) 태양 전지 기판 및 제조 방법
JP3243232B2 (ja) 薄膜太陽電池モジュール
JP2000150944A (ja) 太陽電池モジュール
JP3243229B2 (ja) 太陽電池モジュール
JPH1126795A (ja) 集積化薄膜太陽電池の製造方法
JP4077456B2 (ja) 集積化薄膜太陽電池
JPH09129903A (ja) 集積化薄膜タンデム太陽電池とその製造方法
JP3243227B2 (ja) 太陽電池モジュール
JP3278535B2 (ja) 太陽電池およびその製造方法
JP3655027B2 (ja) 集積型薄膜光電変換装置
JP3762013B2 (ja) 集積型薄膜光電変換装置の製造方法
JP4173692B2 (ja) 太陽電池素子およびその製造方法
JPH0376165A (ja) 連続式太陽電池製造装置
JP3233388B2 (ja) 太陽電池およびその製造方法
JPH10200137A (ja) 集積型薄膜光電変換装置とその製造方法
JPH08222749A (ja) 薄膜太陽電池の製造方法
Hayashi et al. ZnO-Ag sputtering deposition on a-Si solar cells
JPH06232430A (ja) 光起電力装置の製法
CN103098226A (zh) 光电转换器件和其制造方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041022

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20041116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050114

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20050120

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050208

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050221

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080311

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090311

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100311

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100311

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110311

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120311

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130311

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140311

Year of fee payment: 9

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140311

Year of fee payment: 9

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees