DE69634059T2 - Integriertes Dünnschicht-Sonnenzellenmodul und Herstellungsverfahren - Google Patents
Integriertes Dünnschicht-Sonnenzellenmodul und Herstellungsverfahren Download PDFInfo
- Publication number
- DE69634059T2 DE69634059T2 DE69634059T DE69634059T DE69634059T2 DE 69634059 T2 DE69634059 T2 DE 69634059T2 DE 69634059 T DE69634059 T DE 69634059T DE 69634059 T DE69634059 T DE 69634059T DE 69634059 T2 DE69634059 T2 DE 69634059T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- electrically conductive
- electrode
- layers
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 57
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 31
- 239000011787 zinc oxide Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 253
- 238000004140 cleaning Methods 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 229910006404 SnO 2 Inorganic materials 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 238000010248 power generation Methods 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 B. SnO 2 Chemical class 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14884795A JP3653800B2 (ja) | 1995-06-15 | 1995-06-15 | 集積化薄膜太陽電池の製造方法 |
| JP14884795 | 1995-06-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69634059D1 DE69634059D1 (de) | 2005-01-27 |
| DE69634059T2 true DE69634059T2 (de) | 2005-05-19 |
Family
ID=15462073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69634059T Expired - Lifetime DE69634059T2 (de) | 1995-06-15 | 1996-06-13 | Integriertes Dünnschicht-Sonnenzellenmodul und Herstellungsverfahren |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0749161B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP3653800B2 (cg-RX-API-DMAC10.html) |
| KR (1) | KR970004102A (cg-RX-API-DMAC10.html) |
| AU (1) | AU704036B2 (cg-RX-API-DMAC10.html) |
| DE (1) | DE69634059T2 (cg-RX-API-DMAC10.html) |
| TW (1) | TW302553B (cg-RX-API-DMAC10.html) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6265652B1 (en) * | 1995-06-15 | 2001-07-24 | Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha | Integrated thin-film solar battery and method of manufacturing the same |
| US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| US6468828B1 (en) * | 1998-07-14 | 2002-10-22 | Sky Solar L.L.C. | Method of manufacturing lightweight, high efficiency photovoltaic module |
| US6274804B1 (en) | 1999-07-28 | 2001-08-14 | Angewandte Solarenergie - Ase Gmbh | Thin-film solar module |
| AU772539B2 (en) | 1999-07-29 | 2004-04-29 | Kaneka Corporation | Method for cleaning photovoltaic module and cleaning apparatus |
| JP2001044466A (ja) * | 1999-07-29 | 2001-02-16 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜太陽電池の洗浄方法及びその装置 |
| EP2835834A3 (en) * | 1999-08-25 | 2015-06-10 | Kaneka Corporation | Thin film photoelectric conversion module and method of manufacturing the same |
| KR100416139B1 (ko) * | 2001-04-04 | 2004-01-31 | 삼성에스디아이 주식회사 | 태양 전지 모듈 |
| JP4573162B2 (ja) * | 2004-09-16 | 2010-11-04 | 富士電機システムズ株式会社 | 透明導電膜の製造方法 |
| JP2006339342A (ja) * | 2005-06-01 | 2006-12-14 | Shin Etsu Handotai Co Ltd | 太陽電池および太陽電池の製造方法 |
| KR101144808B1 (ko) * | 2008-09-01 | 2012-05-11 | 엘지전자 주식회사 | 박막형 태양전지 제조방법 및 이를 이용한 박막형 태양전지 |
| US20100078064A1 (en) * | 2008-09-29 | 2010-04-01 | Thinsilicion Corporation | Monolithically-integrated solar module |
| CN102272938B (zh) * | 2009-01-29 | 2013-10-09 | 京瓷株式会社 | 光电转换元件、光电转换模块及光电转换元件的制造方法 |
| US8993877B2 (en) * | 2009-06-23 | 2015-03-31 | Toray Engineering Co., Ltd. | Solar battery |
| DE102009027852A1 (de) * | 2009-07-20 | 2011-01-27 | Q-Cells Se | Dünnschicht-Solarmodul mit verbesserter Zusammenschaltung von Solarzellen sowie Verfahren zu dessen Herstellung |
| DE102009055675B4 (de) | 2009-11-25 | 2016-05-19 | Calyxo Gmbh | Photovoltaik-Modulstruktur für die Dünnschichtphotovoltaik mit einer elektrischen Leitungsverbindung und Verfahren zur Herstellung der elektrischen Leitungsverbindung |
| CN102859712A (zh) | 2010-04-20 | 2013-01-02 | 京瓷株式会社 | 太阳能电池元件及使用该太阳能电池元件的太阳能电池模块 |
| JP5539081B2 (ja) * | 2010-07-16 | 2014-07-02 | 株式会社カネカ | 集積型薄膜光電変換装置の製造方法 |
| NL2007344C2 (en) * | 2011-09-02 | 2013-03-05 | Stichting Energie | Interdigitated back contact photovoltaic cell with floating front surface emitter regions. |
| KR101370554B1 (ko) * | 2012-06-08 | 2014-03-10 | 재단법인대구경북과학기술원 | 박막 태양전지 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041878B2 (ja) * | 1979-02-14 | 1985-09-19 | シャープ株式会社 | 薄膜太陽電池装置 |
| DE3382695T2 (de) * | 1982-11-24 | 1993-09-23 | Semiconductor Energy Lab | Fotovoltaischer wandler. |
| JPS59172274A (ja) * | 1983-03-18 | 1984-09-28 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| US4755475A (en) * | 1986-02-18 | 1988-07-05 | Sanyo Electric Co., Ltd. | Method of manufacturing photovoltaic device |
| DE3714920C1 (de) * | 1987-05-05 | 1988-07-14 | Messerschmitt Boelkow Blohm | Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung |
| JPH06104465A (ja) * | 1992-09-22 | 1994-04-15 | Fuji Electric Co Ltd | 薄膜太陽電池およびその製造方法 |
-
1995
- 1995-06-15 JP JP14884795A patent/JP3653800B2/ja not_active Expired - Fee Related
-
1996
- 1996-05-09 TW TW085105502A patent/TW302553B/zh not_active IP Right Cessation
- 1996-06-11 KR KR1019960020779A patent/KR970004102A/ko not_active Ceased
- 1996-06-12 AU AU55891/96A patent/AU704036B2/en not_active Ceased
- 1996-06-13 EP EP96109504A patent/EP0749161B1/en not_active Expired - Lifetime
- 1996-06-13 DE DE69634059T patent/DE69634059T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AU704036B2 (en) | 1999-04-15 |
| KR970004102A (ko) | 1997-01-29 |
| TW302553B (cg-RX-API-DMAC10.html) | 1997-04-11 |
| JP3653800B2 (ja) | 2005-06-02 |
| JPH098337A (ja) | 1997-01-10 |
| AU5589196A (en) | 1997-01-02 |
| DE69634059D1 (de) | 2005-01-27 |
| EP0749161A3 (en) | 1998-07-15 |
| EP0749161A2 (en) | 1996-12-18 |
| EP0749161B1 (en) | 2004-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |