ES8400636A1 - Dispositivo fotovoltaico pindesilicio amorfo. - Google Patents

Dispositivo fotovoltaico pindesilicio amorfo.

Info

Publication number
ES8400636A1
ES8400636A1 ES517864A ES517864A ES8400636A1 ES 8400636 A1 ES8400636 A1 ES 8400636A1 ES 517864 A ES517864 A ES 517864A ES 517864 A ES517864 A ES 517864A ES 8400636 A1 ES8400636 A1 ES 8400636A1
Authority
ES
Spain
Prior art keywords
amorphous silicon
conductor device
manufacture
semi
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES517864A
Other languages
English (en)
Other versions
ES517864A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of ES517864A0 publication Critical patent/ES517864A0/es
Publication of ES8400636A1 publication Critical patent/ES8400636A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

DISPOSITIVO FOTOVOLTAICO PIN DE SILICIO AMORFO, FORMADO POR BOMBARDEO IONICO CON REACCION.CONSTA DE UN SUSTRACTO (10) QUE TIENE UNA REGION SUPERFICIAL (11) QUE COMPRENDE UN MATERIAL CONDUCTOR DE LA ELECTRICIDAD QUE FORMA UN CONTACTO OHMICO CON SILICIO AMORFO IMPURIFICADO NB; DE UNA CAPA (12) DE SILICIO AMORFO IMPURIFICADO N DEPOSITADA SOBRE EL CONTACTO OHMICO; DE UNA CAPA (14) DE SILICIO AMORFO INTRINSECO NB; DE UNA CAPA (16) DE SILICIO AMORFO IMPURIFICADO PB; Y DE UNA CAPA (18) CONDUCTORA DE LA ELECTRICIDAD HECHA DE UN MATERIAL QUE FORMA CONTACTO OHMICOCON SILICIO AMORFO IMPURIFICADO.
ES517864A 1981-03-16 1982-12-01 Dispositivo fotovoltaico pindesilicio amorfo. Expired ES8400636A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/243,754 US4417092A (en) 1981-03-16 1981-03-16 Sputtered pin amorphous silicon semi-conductor device and method therefor

Publications (2)

Publication Number Publication Date
ES517864A0 ES517864A0 (es) 1983-10-16
ES8400636A1 true ES8400636A1 (es) 1983-10-16

Family

ID=22919989

Family Applications (2)

Application Number Title Priority Date Filing Date
ES508234A Granted ES508234A0 (es) 1981-03-16 1981-12-22 "metodo para producir un dispositivo semiconductor pin de silicio amorfo".
ES517864A Expired ES8400636A1 (es) 1981-03-16 1982-12-01 Dispositivo fotovoltaico pindesilicio amorfo.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES508234A Granted ES508234A0 (es) 1981-03-16 1981-12-22 "metodo para producir un dispositivo semiconductor pin de silicio amorfo".

Country Status (7)

Country Link
US (1) US4417092A (es)
EP (1) EP0060363B1 (es)
JP (1) JPS57162375A (es)
AU (1) AU548001B2 (es)
CA (1) CA1170786A (es)
DE (1) DE3174747D1 (es)
ES (2) ES508234A0 (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533450A (en) * 1979-12-31 1985-08-06 Exxon Research And Engineering Co. Control of the hydrogen bonding in reactively sputtered amorphous silicon
US4407710A (en) * 1981-10-15 1983-10-04 Exxon Research And Engineering Co. Hybrid method of making an amorphous silicon P-I-N semiconductor device
JPS58169980A (ja) * 1982-03-19 1983-10-06 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
DE3242831A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung
DE3242791A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen
DE3242835A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium
US4605565A (en) * 1982-12-09 1986-08-12 Energy Conversion Devices, Inc. Method of depositing a highly conductive, highly transmissive film
CA1219547A (en) * 1983-04-04 1987-03-24 Prem Nath Apparatus for and method of continuously depositing a highly conductive, highly transmissive film
US4528082A (en) * 1983-09-26 1985-07-09 Exxon Research And Engineering Co. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers
US4508609A (en) * 1983-09-26 1985-04-02 Exxon Research & Engineering Co. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
DE3535764A1 (de) * 1985-08-14 1987-02-26 Linde Ag Verfahren zum gewinnen von c(pfeil abwaerts)2(pfeil abwaerts)(pfeil abwaerts)+(pfeil abwaerts)-kohlenwasserstoffen
EP0236938A3 (de) * 1986-03-11 1989-11-15 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von Dünnschichtsolarzellen aus amorphem Silizium
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same
US5180690A (en) * 1988-12-14 1993-01-19 Energy Conversion Devices, Inc. Method of forming a layer of doped crystalline semiconductor alloy material
US5213670A (en) * 1989-06-30 1993-05-25 Siemens Aktiengesellschaft Method for manufacturing a polycrystalline layer on a substrate
US5330855A (en) * 1991-09-23 1994-07-19 The United States Of America, As Represented By The Secretary Of Commerce Planar epitaxial films of SnO2
US6379994B1 (en) * 1995-09-25 2002-04-30 Canon Kabushiki Kaisha Method for manufacturing photovoltaic element
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US7528458B2 (en) * 2006-03-02 2009-05-05 Icemos Technology Ltd. Photodiode having increased proportion of light-sensitive area to light-insensitive area
US7893348B2 (en) * 2006-08-25 2011-02-22 General Electric Company Nanowires in thin-film silicon solar cells
US9099578B2 (en) 2012-06-04 2015-08-04 Nusola, Inc. Structure for creating ohmic contact in semiconductor devices and methods for manufacture
US9112103B1 (en) 2013-03-11 2015-08-18 Rayvio Corporation Backside transparent substrate roughening for UV light emitting diode
WO2014145348A1 (en) * 2013-03-15 2014-09-18 Nusola Inc. Infrared photovoltaic device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5582474A (en) * 1978-12-18 1980-06-21 Fuji Photo Film Co Ltd Preparation of photoelectric transducer
US4217148A (en) * 1979-06-18 1980-08-12 Rca Corporation Compensated amorphous silicon solar cell
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors

Also Published As

Publication number Publication date
ES8305157A1 (es) 1983-03-16
AU548001B2 (en) 1985-11-14
EP0060363B1 (en) 1986-05-28
EP0060363A1 (en) 1982-09-22
US4417092A (en) 1983-11-22
ES517864A0 (es) 1983-10-16
DE3174747D1 (en) 1986-07-03
CA1170786A (en) 1984-07-10
ES508234A0 (es) 1983-03-16
JPS57162375A (en) 1982-10-06
AU7875481A (en) 1982-09-23

Similar Documents

Publication Publication Date Title
ES8305157A1 (es) "metodo para producir un dispositivo semiconductor pin de silicio amorfo".
IT8223500A0 (it) Procedimento per fabbricare substrati nervati per elettrodi di pile a combustione ed altri articoli.
JPS5743438A (en) Semiconductor device and manufacture thereof
JPS5422781A (en) Insulator gate protective semiconductor device
JPS5339061A (en) Production of semiconductor device
ES518107A0 (es) Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica.
JPS542683A (en) Semiconductor chip
JPS5393783A (en) Mesa type semiconductor device
JPS54101687A (en) Solar battery unit
JPS52115669A (en) Semiconductor memory device
JPS547863A (en) Electrode forming method for semiconductor device
JPS5352062A (en) Production of pn junction semiconductor unit
JPS5287978A (en) Bump electrode forming method in semiconductor device
JPS5730393A (en) Manufacture of semiconductor device
JPS5419374A (en) Semiconductor device
KR960010060B1 (en) Contact forming method of semiconductor device
JPS52141563A (en) Semiconductor device
JPS5421293A (en) Inductance
JPS537349A (en) Semiconductor device
JPS54973A (en) Semiconductor element
JPS5377177A (en) Production of semiconductor device
JPS52122080A (en) Forming methods of ohmic electrodes
JPS5310969A (en) Production of semiconductor device
JPS53108280A (en) Semiconductor device
JPS5314599A (en) Display device