DE3174747D1 - Method of manufacture of a pin amorphous silicon semi-conductor device - Google Patents
Method of manufacture of a pin amorphous silicon semi-conductor deviceInfo
- Publication number
- DE3174747D1 DE3174747D1 DE8181306070T DE3174747T DE3174747D1 DE 3174747 D1 DE3174747 D1 DE 3174747D1 DE 8181306070 T DE8181306070 T DE 8181306070T DE 3174747 T DE3174747 T DE 3174747T DE 3174747 D1 DE3174747 D1 DE 3174747D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- amorphous silicon
- conductor device
- silicon semi
- pin amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/243,754 US4417092A (en) | 1981-03-16 | 1981-03-16 | Sputtered pin amorphous silicon semi-conductor device and method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3174747D1 true DE3174747D1 (en) | 1986-07-03 |
Family
ID=22919989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181306070T Expired DE3174747D1 (en) | 1981-03-16 | 1981-12-23 | Method of manufacture of a pin amorphous silicon semi-conductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US4417092A (de) |
EP (1) | EP0060363B1 (de) |
JP (1) | JPS57162375A (de) |
AU (1) | AU548001B2 (de) |
CA (1) | CA1170786A (de) |
DE (1) | DE3174747D1 (de) |
ES (2) | ES508234A0 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4533450A (en) * | 1979-12-31 | 1985-08-06 | Exxon Research And Engineering Co. | Control of the hydrogen bonding in reactively sputtered amorphous silicon |
US4407710A (en) * | 1981-10-15 | 1983-10-04 | Exxon Research And Engineering Co. | Hybrid method of making an amorphous silicon P-I-N semiconductor device |
JPS58169980A (ja) * | 1982-03-19 | 1983-10-06 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
DE3242831A1 (de) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung |
DE3242791A1 (de) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen |
DE3242835A1 (de) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem silizium |
US4605565A (en) * | 1982-12-09 | 1986-08-12 | Energy Conversion Devices, Inc. | Method of depositing a highly conductive, highly transmissive film |
CA1219547A (en) * | 1983-04-04 | 1987-03-24 | Prem Nath | Apparatus for and method of continuously depositing a highly conductive, highly transmissive film |
US4528082A (en) * | 1983-09-26 | 1985-07-09 | Exxon Research And Engineering Co. | Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers |
US4508609A (en) * | 1983-09-26 | 1985-04-02 | Exxon Research & Engineering Co. | Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets |
EP0153043A3 (de) * | 1984-02-15 | 1986-09-24 | Energy Conversion Devices, Inc. | Ohmische Kontaktschicht |
DE3535764A1 (de) * | 1985-08-14 | 1987-02-26 | Linde Ag | Verfahren zum gewinnen von c(pfeil abwaerts)2(pfeil abwaerts)(pfeil abwaerts)+(pfeil abwaerts)-kohlenwasserstoffen |
EP0236938A3 (de) * | 1986-03-11 | 1989-11-15 | Siemens Aktiengesellschaft | Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von Dünnschichtsolarzellen aus amorphem Silizium |
US4818357A (en) * | 1987-05-06 | 1989-04-04 | Brown University Research Foundation | Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same |
US5180690A (en) * | 1988-12-14 | 1993-01-19 | Energy Conversion Devices, Inc. | Method of forming a layer of doped crystalline semiconductor alloy material |
US5213670A (en) * | 1989-06-30 | 1993-05-25 | Siemens Aktiengesellschaft | Method for manufacturing a polycrystalline layer on a substrate |
US5330855A (en) * | 1991-09-23 | 1994-07-19 | The United States Of America, As Represented By The Secretary Of Commerce | Planar epitaxial films of SnO2 |
US6379994B1 (en) * | 1995-09-25 | 2002-04-30 | Canon Kabushiki Kaisha | Method for manufacturing photovoltaic element |
US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
US7528458B2 (en) * | 2006-03-02 | 2009-05-05 | Icemos Technology Ltd. | Photodiode having increased proportion of light-sensitive area to light-insensitive area |
US7893348B2 (en) * | 2006-08-25 | 2011-02-22 | General Electric Company | Nanowires in thin-film silicon solar cells |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
US9112103B1 (en) | 2013-03-11 | 2015-08-18 | Rayvio Corporation | Backside transparent substrate roughening for UV light emitting diode |
WO2014145348A1 (en) * | 2013-03-15 | 2014-09-18 | Nusola Inc. | Infrared photovoltaic device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
JPS5582474A (en) * | 1978-12-18 | 1980-06-21 | Fuji Photo Film Co Ltd | Preparation of photoelectric transducer |
US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
US4251289A (en) * | 1979-12-28 | 1981-02-17 | Exxon Research & Engineering Co. | Gradient doping in amorphous silicon |
US4412900A (en) * | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
-
1981
- 1981-03-16 US US06/243,754 patent/US4417092A/en not_active Expired - Fee Related
- 1981-11-05 CA CA000389475A patent/CA1170786A/en not_active Expired
- 1981-12-22 ES ES508234A patent/ES508234A0/es active Granted
- 1981-12-22 AU AU78754/81A patent/AU548001B2/en not_active Ceased
- 1981-12-23 EP EP81306070A patent/EP0060363B1/de not_active Expired
- 1981-12-23 DE DE8181306070T patent/DE3174747D1/de not_active Expired
-
1982
- 1982-01-08 JP JP57001121A patent/JPS57162375A/ja active Pending
- 1982-12-01 ES ES517864A patent/ES8400636A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
ES8305157A1 (es) | 1983-03-16 |
AU548001B2 (en) | 1985-11-14 |
EP0060363B1 (de) | 1986-05-28 |
EP0060363A1 (de) | 1982-09-22 |
US4417092A (en) | 1983-11-22 |
ES517864A0 (es) | 1983-10-16 |
CA1170786A (en) | 1984-07-10 |
ES508234A0 (es) | 1983-03-16 |
JPS57162375A (en) | 1982-10-06 |
AU7875481A (en) | 1982-09-23 |
ES8400636A1 (es) | 1983-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |