KR950000484B1 - 감광성 화합물 및 열적으로 안정하며 수성 현상이 가능한 음화 - Google Patents

감광성 화합물 및 열적으로 안정하며 수성 현상이 가능한 음화 Download PDF

Info

Publication number
KR950000484B1
KR950000484B1 KR1019870000213A KR870000213A KR950000484B1 KR 950000484 B1 KR950000484 B1 KR 950000484B1 KR 1019870000213 A KR1019870000213 A KR 1019870000213A KR 870000213 A KR870000213 A KR 870000213A KR 950000484 B1 KR950000484 B1 KR 950000484B1
Authority
KR
South Korea
Prior art keywords
acid
bis
photoacid
chlorophenyl
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019870000213A
Other languages
English (en)
Korean (ko)
Other versions
KR870007449A (ko
Inventor
에드문드 휘일리 웨인
Original Assignee
롬 엔드 하스 캄파니
윌리암 이. 람버트 3세
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 엔드 하스 캄파니, 윌리암 이. 람버트 3세 filed Critical 롬 엔드 하스 캄파니
Publication of KR870007449A publication Critical patent/KR870007449A/ko
Application granted granted Critical
Publication of KR950000484B1 publication Critical patent/KR950000484B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G03F7/0295Photolytic halogen compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Polymerisation Methods In General (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Secondary Cells (AREA)
KR1019870000213A 1986-01-13 1987-01-13 감광성 화합물 및 열적으로 안정하며 수성 현상이 가능한 음화 Expired - Lifetime KR950000484B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US81843086A 1986-01-13 1986-01-13
US818,430 1986-01-13
US818430 1986-01-13

Publications (2)

Publication Number Publication Date
KR870007449A KR870007449A (ko) 1987-08-19
KR950000484B1 true KR950000484B1 (ko) 1995-01-20

Family

ID=25225519

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870000213A Expired - Lifetime KR950000484B1 (ko) 1986-01-13 1987-01-13 감광성 화합물 및 열적으로 안정하며 수성 현상이 가능한 음화

Country Status (19)

Country Link
EP (1) EP0232972B1 (enExample)
JP (2) JPH083635B2 (enExample)
KR (1) KR950000484B1 (enExample)
CN (1) CN1036489C (enExample)
AT (1) ATE94295T1 (enExample)
AU (1) AU593880B2 (enExample)
BR (1) BR8700092A (enExample)
CA (1) CA1307695C (enExample)
DE (1) DE3787296T2 (enExample)
DK (1) DK14087A (enExample)
FI (1) FI870104L (enExample)
HK (1) HK143493A (enExample)
IL (1) IL81229A (enExample)
IN (1) IN167612B (enExample)
MX (1) MX167803B (enExample)
MY (1) MY103315A (enExample)
NO (1) NO870119L (enExample)
PH (1) PH27327A (enExample)
ZA (1) ZA87199B (enExample)

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1308596C (en) * 1986-01-13 1992-10-13 Rohm And Haas Company Microplastic structures and method of manufacture
DE3821585A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE3821584A1 (de) * 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
JPH02275956A (ja) * 1988-12-23 1990-11-09 Oki Electric Ind Co Ltd フォトレジスト組成物
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE3907954A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
JP2661671B2 (ja) * 1989-03-20 1997-10-08 株式会社日立製作所 パタン形成材料とそれを用いたパタン形成方法
JPH02254450A (ja) * 1989-03-29 1990-10-15 Toshiba Corp レジスト
CA2015721A1 (en) * 1989-05-12 1990-11-12 Karen Ann Graziano Method of using highly branched novolaks in photoresists
US5128232A (en) * 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
US5210000A (en) * 1989-05-22 1993-05-11 Shipley Company Inc. Photoresist and method for forming a relief image utilizing composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
US5391465A (en) * 1989-06-20 1995-02-21 Rohm And Haas Company Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
CA2019693A1 (en) * 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2660352B2 (ja) * 1989-09-20 1997-10-08 日本ゼオン株式会社 レジスト組成物
US5019481A (en) * 1989-09-25 1991-05-28 International Business Machines Corporation Aqueous base developable negative resist compositions
EP0423446B1 (en) * 1989-10-17 1998-03-04 Shipley Company Inc. Near UV photoresist
US5650261A (en) * 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
DE3935876A1 (de) * 1989-10-27 1991-05-02 Basf Ag Strahlungsempfindliches gemisch
DE4006190A1 (de) * 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2861253B2 (ja) * 1990-05-15 1999-02-24 ソニー株式会社 感光性樹脂組成物
DE69130003T2 (de) * 1990-05-25 1999-02-11 Mitsubishi Chemical Corp., Tokio/Tokyo Negative lichtempfindliche Zusammensetzung und Verfahren zur Bildung eines Photolackmusters
JPH04110945A (ja) * 1990-08-31 1992-04-13 Mitsubishi Kasei Corp ネガ型感光性組成物
EP0462391B1 (en) * 1990-06-19 1999-10-06 Shipley Company Inc. Acid hardened photoresists
DE4025959A1 (de) * 1990-08-16 1992-02-20 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
JPH04107560A (ja) * 1990-08-29 1992-04-09 Mitsubishi Kasei Corp ネガ型感光性組成物
JP2538118B2 (ja) * 1990-09-28 1996-09-25 東京応化工業株式会社 ネガ型放射線感応性レジスト組成物
JP3006873B2 (ja) * 1990-11-14 2000-02-07 大日本印刷株式会社 Ps版用またはホログラム記録材料用光硬化性組成物
US5206116A (en) * 1991-03-04 1993-04-27 Shipley Company Inc. Light-sensitive composition for use as a soldermask and process
US5312715A (en) * 1991-03-04 1994-05-17 Shipley Company Inc. Light-sensitive composition and process
DE4112965A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4112972A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4112974A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4112968A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Saeurespaltbare verbindungen, diese enthaltendes positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
GB2259152B (en) * 1991-06-14 1995-01-11 Nippon Zeon Co Resist composition
DE4120174A1 (de) * 1991-06-19 1992-12-24 Hoechst Ag Strahlungsempfindliche sulfonsaeureester und deren verwendung
DE4125042A1 (de) * 1991-07-29 1993-02-04 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5292614A (en) * 1991-08-02 1994-03-08 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern
US5286600A (en) * 1991-08-27 1994-02-15 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern by means thereof
US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5384229A (en) 1992-05-07 1995-01-24 Shipley Company Inc. Photoimageable compositions for electrodeposition
US5389491A (en) * 1992-07-15 1995-02-14 Matsushita Electric Industrial Co., Ltd. Negative working resist composition
US5879856A (en) 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
US6017680A (en) * 1997-08-05 2000-01-25 Hitachi, Ltd. Method for pattern formation and process for preparing semiconductor device
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP2005336452A (ja) * 2004-04-27 2005-12-08 Tokyo Ohka Kogyo Co Ltd レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法
US7781141B2 (en) 2004-07-02 2010-08-24 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトレジスト組成物
KR100674932B1 (ko) 2005-01-03 2007-01-26 삼성전자주식회사 Pag및 tag를 포함하는 화학증폭형 포토레지스트 조성물을 이용한 반도체 소자의 미세 패턴 형성 방법
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
JP4633500B2 (ja) 2005-03-01 2011-02-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. エポキシ含有物質を含むネガ型感光性樹脂組成物
JP4662793B2 (ja) 2005-03-01 2011-03-30 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. エポキシ含有物質を含むネガ型感光性樹脂組成物
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI358613B (en) 2006-03-10 2012-02-21 Rohm & Haas Elect Mat Compositions and processes for photolithography
TWI375130B (en) 2006-10-30 2012-10-21 Rohm & Haas Elect Mat Compositions and processes for immersion lithography
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
CN101308329B (zh) 2007-04-06 2013-09-04 罗门哈斯电子材料有限公司 涂料组合物
KR100971066B1 (ko) 2007-06-29 2010-07-20 샌트랄 글래스 컴퍼니 리미티드 불소 함유 화합물, 불소 함유 고분자 화합물, 네거티브형레지스트 조성물 및 이것을 사용한 패턴 형성방법
CN101526737B (zh) 2007-11-05 2014-02-26 罗门哈斯电子材料有限公司 浸渍平版印刷用组合物和浸渍平版印刷方法
JP2009199061A (ja) 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
JP5172505B2 (ja) 2008-07-07 2013-03-27 東京応化工業株式会社 ネガ型レジスト組成物およびそれを用いたレジストパターン形成方法
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2189847A3 (en) 2008-11-19 2010-07-21 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2189844A3 (en) 2008-11-19 2010-07-28 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
KR101701189B1 (ko) 2009-06-08 2017-02-01 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토리소그래피 방법
JP5687442B2 (ja) 2009-06-22 2015-03-18 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 光酸発生剤およびこれを含むフォトレジスト
EP2287667B1 (en) 2009-06-26 2013-03-27 Rohm and Haas Electronic Materials, L.L.C. Self-aligned spacer multiple patterning methods
CN101963754B (zh) 2009-06-26 2012-12-19 罗门哈斯电子材料有限公司 形成电子器件的方法
JP5753351B2 (ja) 2009-11-19 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 電子デバイスを形成する方法
EP2360153B1 (en) 2009-12-10 2015-04-08 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
JP5809798B2 (ja) 2009-12-10 2015-11-11 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC コラート光酸発生剤およびこれを含むフォトレジスト
TWI464141B (zh) 2009-12-14 2014-12-11 羅門哈斯電子材料有限公司 磺醯基光酸產生劑及含該光酸產生劑之光阻
CN104698749B (zh) 2010-01-25 2019-11-19 罗门哈斯电子材料有限公司 包含含氮化合物的光致抗蚀剂
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤およびこれを含むフォトレジスト
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 新規のポリマーおよびフォトレジスト組成物
JP5756672B2 (ja) 2010-04-27 2015-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤およびこれを含むフォトレジスト
EP2428842A1 (en) 2010-09-14 2012-03-14 Rohm and Haas Electronic Materials LLC Photoresists comprising multi-amide component
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 糖成分を含む組成物およびフォトリソグラフィ方法
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
TWI541226B (zh) 2010-11-15 2016-07-11 羅門哈斯電子材料有限公司 鹼反應性光酸產生劑及包含該光酸產生劑之光阻劑
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2472328B1 (en) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
JP4945688B2 (ja) * 2011-02-07 2012-06-06 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
KR20140014217A (ko) 2011-03-10 2014-02-05 쓰리엠 이노베이티브 프로퍼티즈 컴파니 여과 매체
US9122159B2 (en) 2011-04-14 2015-09-01 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
CN103874731B (zh) 2011-09-07 2017-02-15 微量化学公司 用于在低表面能基底上制造浮雕图案的环氧制剂和方法
US8703385B2 (en) 2012-02-10 2014-04-22 3M Innovative Properties Company Photoresist composition
US11635688B2 (en) 2012-03-08 2023-04-25 Kayaku Advanced Materials, Inc. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
US8715904B2 (en) 2012-04-27 2014-05-06 3M Innovative Properties Company Photocurable composition
US8883402B2 (en) 2012-08-09 2014-11-11 3M Innovative Properties Company Photocurable compositions
CN104737075A (zh) 2012-08-09 2015-06-24 3M创新有限公司 可光致固化的组合物
US10527934B2 (en) 2012-10-31 2020-01-07 Rohm And Haas Electronic Materials Llc Photoresists comprising ionic compound
US9541834B2 (en) 2012-11-30 2017-01-10 Rohm And Haas Electronic Materials Llc Ionic thermal acid generators for low temperature applications
US8933239B1 (en) 2013-07-16 2015-01-13 Dow Global Technologies Llc Bis(aryl)acetal compounds
US9410016B2 (en) 2013-07-16 2016-08-09 Dow Global Technologies Llc Aromatic polyacetals and articles comprising them
US8962779B2 (en) 2013-07-16 2015-02-24 Dow Global Technologies Llc Method of forming polyaryl polymers
US9063420B2 (en) 2013-07-16 2015-06-23 Rohm And Haas Electronic Materials Llc Photoresist composition, coated substrate, and method of forming electronic device
US9182669B2 (en) 2013-12-19 2015-11-10 Rohm And Haas Electronic Materials Llc Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device
JP6764636B2 (ja) 2014-10-08 2020-10-07 東京応化工業株式会社 感放射線性樹脂組成物、パターン製造方法、透明絶縁膜、及び表示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US369260A (en) * 1887-08-30 Assxgnoe to
JPS5423574B2 (enExample) * 1972-09-13 1979-08-15
JPS49110703A (enExample) * 1973-02-22 1974-10-22
US3988152A (en) * 1973-06-11 1976-10-26 American Can Company Epoxy resin photoresist with iodoform and bismuth triphenyl
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE3107109A1 (de) * 1981-02-26 1982-09-09 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
JPS59116744A (ja) * 1982-12-24 1984-07-05 Japan Synthetic Rubber Co Ltd 感電離放射線樹脂組成物
AU566309B2 (en) * 1983-06-27 1987-10-15 Stauffer Chemical Company Photopolymerizable composition
DK241885A (da) * 1984-06-01 1985-12-02 Rohm & Haas Fotosensible belaegningssammensaetninger, termisk stabile belaegninger fremstillet deraf og anvendelse af saadanne belaegninger til dannelse af termisk stabile polymerbilleder
CA1308596C (en) * 1986-01-13 1992-10-13 Rohm And Haas Company Microplastic structures and method of manufacture

Also Published As

Publication number Publication date
MX167803B (es) 1993-04-12
CN87100185A (zh) 1987-09-23
DE3787296D1 (de) 1993-10-14
JPH083635B2 (ja) 1996-01-17
BR8700092A (pt) 1987-12-01
ATE94295T1 (de) 1993-09-15
IL81229A0 (en) 1987-08-31
CA1307695C (en) 1992-09-22
DE3787296T2 (de) 1994-03-31
DK14087A (da) 1987-07-14
AU593880B2 (en) 1990-02-22
IL81229A (en) 1991-03-10
MY103315A (en) 1993-05-29
NO870119D0 (no) 1987-01-13
HK143493A (en) 1994-01-07
IN167612B (enExample) 1990-11-24
PH27327A (en) 1993-06-08
JPS62164045A (ja) 1987-07-20
AU6752887A (en) 1987-07-16
EP0232972A2 (en) 1987-08-19
FI870104A0 (fi) 1987-01-12
JP2000131842A (ja) 2000-05-12
CN1036489C (zh) 1997-11-19
DK14087D0 (da) 1987-01-12
NO870119L (no) 1987-07-14
EP0232972A3 (en) 1988-12-21
EP0232972B1 (en) 1993-09-08
FI870104A7 (fi) 1987-07-14
JP3320676B2 (ja) 2002-09-03
FI870104L (fi) 1987-07-14
KR870007449A (ko) 1987-08-19
ZA87199B (en) 1988-09-28

Similar Documents

Publication Publication Date Title
KR950000484B1 (ko) 감광성 화합물 및 열적으로 안정하며 수성 현상이 가능한 음화
US5034304A (en) Photosensitive compounds and thermally stable and aqueous developable negative images
KR910005884B1 (ko) 패턴형성용 레지스트물질 및 레지스트 패턴의 형성방법
KR0155997B1 (ko) 공중합체 결합제를 사용한 감광성 내식막
KR950007338B1 (ko) 마이크로 플라스틱 구조물 및 그 제조방법
IL96109A (en) Positive-acting photoresist composition and its production
EP0423446B1 (en) Near UV photoresist
US5536616A (en) Photoresists containing water soluble sugar crosslinking agents
US5204225A (en) Process for producing negative images
JPS60115222A (ja) 微細パタ−ン形成方法
JP2708363B2 (ja) ネガティブトーンマイクロリトグラフィックレジスト組成物及びマイクロリトグラフィックレリーフ画像形成方法
KR0155990B1 (ko) 근자외선 방사에 의해 고해상도를 나타내는 산 경화 광저항물에 있어서 선택된 광활성 조성물의 사용법
JPH04251850A (ja) 半導体素子の製造方法
JPH0419666A (ja) 感光性樹脂組成物
EP0462391B1 (en) Acid hardened photoresists
US4454200A (en) Methods for conducting electron beam lithography
US4264715A (en) Method of preparing resist pattern
US4588675A (en) Method for fine pattern formation on a photoresist
JP3507219B2 (ja) ネガ型レジスト組成物及びパターン形成方法
KR100300935B1 (ko) 방사선 감수성 레지스트 조성물
JPH03179355A (ja) 放射線感応性組成物及びそれを用いたパターン形成方法
Wilkins Jr et al. Deep UV photolithographic systems and processes
JPS60114857A (ja) 乾式現像用感光性組成物
JPS61275747A (ja) ネガレジスト材料
Toriumi et al. Negative Bleaching Photoresist (BLEST) for mid-UV Exposure

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19870113

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19920113

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19870113

Comment text: Patent Application

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19941227

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19950331

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19950509

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19950509

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19971224

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19981030

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20000120

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20001214

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20020114

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20030106

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20031111

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20050110

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20060117

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20060117

Start annual number: 12

End annual number: 12

EXPY Expiration of term
PC1801 Expiration of term